JPS6347135B2 - - Google Patents

Info

Publication number
JPS6347135B2
JPS6347135B2 JP18902280A JP18902280A JPS6347135B2 JP S6347135 B2 JPS6347135 B2 JP S6347135B2 JP 18902280 A JP18902280 A JP 18902280A JP 18902280 A JP18902280 A JP 18902280A JP S6347135 B2 JPS6347135 B2 JP S6347135B2
Authority
JP
Japan
Prior art keywords
mixed crystal
layer
ratio
gallium arsenide
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18902280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57111016A (en
Inventor
Shinichi Hasegawa
Hisanori Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP18902280A priority Critical patent/JPS57111016A/ja
Publication of JPS57111016A publication Critical patent/JPS57111016A/ja
Publication of JPS6347135B2 publication Critical patent/JPS6347135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP18902280A 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer Granted JPS57111016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18902280A JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18902280A JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Publications (2)

Publication Number Publication Date
JPS57111016A JPS57111016A (en) 1982-07-10
JPS6347135B2 true JPS6347135B2 (enExample) 1988-09-20

Family

ID=16233986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18902280A Granted JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Country Status (1)

Country Link
JP (1) JPS57111016A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6259595A (ja) * 1985-09-09 1987-03-16 Mitsubishi Monsanto Chem Co ひ化ガリウム単結晶薄膜の気相エピタキシヤル成長方法

Also Published As

Publication number Publication date
JPS57111016A (en) 1982-07-10

Similar Documents

Publication Publication Date Title
US4912064A (en) Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
Soga et al. Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition
US5011549A (en) Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon
US5709745A (en) Compound semi-conductors and controlled doping thereof
Olsen et al. Crystal growth and properties of binary, ternary and quaternary (In, Ga)(As, P) alloys grown by the hydride vapor phase epitaxy technique
JPH076971A (ja) 合成半導体及び制御されたそのドーピング
JPH0688871B2 (ja) 化学ビ−ム堆積法
JPS6329928A (ja) シリコン上にガリウムヒ素をエピタキシヤル成長せしめる方法
US4789421A (en) Gallium arsenide superlattice crystal grown on silicon substrate and method of growing such crystal
US4252576A (en) Epitaxial wafer for use in production of light emitting diode
US4216484A (en) Method of manufacturing electroluminescent compound semiconductor wafer
JPH0579163B2 (enExample)
US4218270A (en) Method of fabricating electroluminescent element utilizing multi-stage epitaxial deposition and substrate removal techniques
JPH08335715A (ja) エピタキシャルウエハおよびその製造方法
KR900002080B1 (ko) 비소화칼륨 단결정 박막의 기상 에피택셜 성장방법
JPS6347135B2 (enExample)
KR100210758B1 (ko) 에피택셜 웨이퍼 및 그 제조방법
JP3146874B2 (ja) 発光ダイオード
JPS61106497A (ja) 燐化砒化ガリウムエピタキシヤル膜の成長方法
US3752714A (en) Method for selective epitaxial deposition of intermetallic semiconductor compounds
JPH04328878A (ja) 発光ダイオ−ド用エピタキシャルウエハの製造方法
JPH04328823A (ja) 発光ダイオ−ド用エピタキシャルウエハの製造方法
JPS6222444B2 (enExample)
JPS6222443B2 (enExample)
JP3097587B2 (ja) 発光半導体素子用エピタキシャルウェーハ