JPS6345864A - 半導体不揮発性メモリ - Google Patents

半導体不揮発性メモリ

Info

Publication number
JPS6345864A
JPS6345864A JP61189919A JP18991986A JPS6345864A JP S6345864 A JPS6345864 A JP S6345864A JP 61189919 A JP61189919 A JP 61189919A JP 18991986 A JP18991986 A JP 18991986A JP S6345864 A JPS6345864 A JP S6345864A
Authority
JP
Japan
Prior art keywords
gate electrode
floating gate
channel
drain
nonvolatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61189919A
Other languages
English (en)
Japanese (ja)
Other versions
JPH026234B2 (enExample
Inventor
Yutaka Hayashi
豊 林
Yoshikazu Kojima
芳和 小島
Ryoji Takada
高田 量司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Japan Science and Technology Agency
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Seiko Instruments Inc
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Seiko Instruments Inc, Research Development Corp of Japan filed Critical Agency of Industrial Science and Technology
Priority to JP61189919A priority Critical patent/JPS6345864A/ja
Publication of JPS6345864A publication Critical patent/JPS6345864A/ja
Publication of JPH026234B2 publication Critical patent/JPH026234B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP61189919A 1986-08-13 1986-08-13 半導体不揮発性メモリ Granted JPS6345864A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61189919A JPS6345864A (ja) 1986-08-13 1986-08-13 半導体不揮発性メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61189919A JPS6345864A (ja) 1986-08-13 1986-08-13 半導体不揮発性メモリ

Publications (2)

Publication Number Publication Date
JPS6345864A true JPS6345864A (ja) 1988-02-26
JPH026234B2 JPH026234B2 (enExample) 1990-02-08

Family

ID=16249405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61189919A Granted JPS6345864A (ja) 1986-08-13 1986-08-13 半導体不揮発性メモリ

Country Status (1)

Country Link
JP (1) JPS6345864A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007092282A (ja) * 2005-09-26 2007-04-12 Kubota Corp バックホー

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007092282A (ja) * 2005-09-26 2007-04-12 Kubota Corp バックホー

Also Published As

Publication number Publication date
JPH026234B2 (enExample) 1990-02-08

Similar Documents

Publication Publication Date Title
US7851850B2 (en) Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection
US5053842A (en) Semiconductor nonvolatile memory
JPH0927560A (ja) 不揮発性半導体記憶装置
KR20000053369A (ko) Eeprom 메모리 셀 및 그 제조 방법
US5126809A (en) Semiconductor non-volatile memory
JPH0465879A (ja) 不揮発性半導体記憶装置
KR100324191B1 (ko) 비휘발성반도체기억장치내에서의데이터소거방법
JPH04151877A (ja) 半導体不揮発性記憶装置
JPS6345864A (ja) 半導体不揮発性メモリ
KR20000035785A (ko) 비휘발성 메모리 셀
TW200414515A (en) Dual-bit nitride read only memory cell
KR960011187B1 (ko) 불휘발성 반도체메모리
JP3069358B2 (ja) 半導体集積回路装置
JPH0496278A (ja) 不揮発性半導体記憶装置
JP2957615B2 (ja) 不揮発性半導体記憶装置
JPH0352268A (ja) 半導体不揮発性メモリの書込み・読出し方法
JP2867267B2 (ja) 半導体不揮発性メモリとその動作方法
JPS58154273A (ja) 不揮発性半導体メモリ
JPS6318864B2 (enExample)
JPH0451072B2 (enExample)
JPH03245567A (ja) 半導体装置
JPH07112018B2 (ja) 半導体記憶装置
JPS6322398B2 (enExample)
JP2006339554A (ja) 不揮発性半導体記憶装置及びその動作方法
JPH04336469A (ja) 不揮発性半導体記憶装置

Legal Events

Date Code Title Description
S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term