JPS6345368A - スパツタ装置 - Google Patents
スパツタ装置Info
- Publication number
- JPS6345368A JPS6345368A JP19010286A JP19010286A JPS6345368A JP S6345368 A JPS6345368 A JP S6345368A JP 19010286 A JP19010286 A JP 19010286A JP 19010286 A JP19010286 A JP 19010286A JP S6345368 A JPS6345368 A JP S6345368A
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- reaction
- sputtering apparatus
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 230000003628 erosive effect Effects 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 9
- 230000003449 preventive effect Effects 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 239000011796 hollow space material Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 7
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000010348 incorporation Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 2
- 208000006558 Dental Calculus Diseases 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010981 turquoise Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19010286A JPS6345368A (ja) | 1986-08-13 | 1986-08-13 | スパツタ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19010286A JPS6345368A (ja) | 1986-08-13 | 1986-08-13 | スパツタ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6345368A true JPS6345368A (ja) | 1988-02-26 |
| JPH0225987B2 JPH0225987B2 (enrdf_load_stackoverflow) | 1990-06-06 |
Family
ID=16252409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19010286A Granted JPS6345368A (ja) | 1986-08-13 | 1986-08-13 | スパツタ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6345368A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03134166A (ja) * | 1989-10-20 | 1991-06-07 | Tokyo Electron Ltd | スパッタ装置 |
| US5244556A (en) * | 1990-09-20 | 1993-09-14 | Fujitsu Limited | Method for depositing thin film on substrate by sputtering process |
| US5286361A (en) * | 1992-10-19 | 1994-02-15 | Regents Of The University Of California | Magnetically attached sputter targets |
| WO2008001547A1 (fr) | 2006-06-29 | 2008-01-03 | Nippon Mining & Metals Co., Ltd. | élément de liaison pour cible de pulvérisation cathodique/plaque de support |
| KR20200069884A (ko) * | 2018-12-07 | 2020-06-17 | 에스케이하이닉스 주식회사 | 스퍼터링 타겟 및 그 제조 방법 |
-
1986
- 1986-08-13 JP JP19010286A patent/JPS6345368A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03134166A (ja) * | 1989-10-20 | 1991-06-07 | Tokyo Electron Ltd | スパッタ装置 |
| US5244556A (en) * | 1990-09-20 | 1993-09-14 | Fujitsu Limited | Method for depositing thin film on substrate by sputtering process |
| US5286361A (en) * | 1992-10-19 | 1994-02-15 | Regents Of The University Of California | Magnetically attached sputter targets |
| WO2008001547A1 (fr) | 2006-06-29 | 2008-01-03 | Nippon Mining & Metals Co., Ltd. | élément de liaison pour cible de pulvérisation cathodique/plaque de support |
| JP4879986B2 (ja) * | 2006-06-29 | 2012-02-22 | Ｊｘ日鉱日石金属株式会社 | スパッタリングターゲット／バッキングプレート接合体 |
| KR20200069884A (ko) * | 2018-12-07 | 2020-06-17 | 에스케이하이닉스 주식회사 | 스퍼터링 타겟 및 그 제조 방법 |
| US10995401B2 (en) * | 2018-12-07 | 2021-05-04 | SK Hynix Inc. | Sputtering target and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0225987B2 (enrdf_load_stackoverflow) | 1990-06-06 |
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