JPS6345368A - スパツタ装置 - Google Patents

スパツタ装置

Info

Publication number
JPS6345368A
JPS6345368A JP19010286A JP19010286A JPS6345368A JP S6345368 A JPS6345368 A JP S6345368A JP 19010286 A JP19010286 A JP 19010286A JP 19010286 A JP19010286 A JP 19010286A JP S6345368 A JPS6345368 A JP S6345368A
Authority
JP
Japan
Prior art keywords
target
backing plate
reaction
sputtering apparatus
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19010286A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0225987B2 (enrdf_load_stackoverflow
Inventor
Shigeya Mori
森　重哉
Toshinobu Araki
新木　俊宣
Katsuya Okumura
勝弥 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP19010286A priority Critical patent/JPS6345368A/ja
Publication of JPS6345368A publication Critical patent/JPS6345368A/ja
Publication of JPH0225987B2 publication Critical patent/JPH0225987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP19010286A 1986-08-13 1986-08-13 スパツタ装置 Granted JPS6345368A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19010286A JPS6345368A (ja) 1986-08-13 1986-08-13 スパツタ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19010286A JPS6345368A (ja) 1986-08-13 1986-08-13 スパツタ装置

Publications (2)

Publication Number Publication Date
JPS6345368A true JPS6345368A (ja) 1988-02-26
JPH0225987B2 JPH0225987B2 (enrdf_load_stackoverflow) 1990-06-06

Family

ID=16252409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19010286A Granted JPS6345368A (ja) 1986-08-13 1986-08-13 スパツタ装置

Country Status (1)

Country Link
JP (1) JPS6345368A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03134166A (ja) * 1989-10-20 1991-06-07 Tokyo Electron Ltd スパッタ装置
US5244556A (en) * 1990-09-20 1993-09-14 Fujitsu Limited Method for depositing thin film on substrate by sputtering process
US5286361A (en) * 1992-10-19 1994-02-15 Regents Of The University Of California Magnetically attached sputter targets
WO2008001547A1 (fr) 2006-06-29 2008-01-03 Nippon Mining & Metals Co., Ltd. élément de liaison pour cible de pulvérisation cathodique/plaque de support
KR20200069884A (ko) * 2018-12-07 2020-06-17 에스케이하이닉스 주식회사 스퍼터링 타겟 및 그 제조 방법

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03134166A (ja) * 1989-10-20 1991-06-07 Tokyo Electron Ltd スパッタ装置
US5244556A (en) * 1990-09-20 1993-09-14 Fujitsu Limited Method for depositing thin film on substrate by sputtering process
US5286361A (en) * 1992-10-19 1994-02-15 Regents Of The University Of California Magnetically attached sputter targets
WO2008001547A1 (fr) 2006-06-29 2008-01-03 Nippon Mining & Metals Co., Ltd. élément de liaison pour cible de pulvérisation cathodique/plaque de support
JP4879986B2 (ja) * 2006-06-29 2012-02-22 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット／バッキングプレート接合体
KR20200069884A (ko) * 2018-12-07 2020-06-17 에스케이하이닉스 주식회사 스퍼터링 타겟 및 그 제조 방법
US10995401B2 (en) * 2018-12-07 2021-05-04 SK Hynix Inc. Sputtering target and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0225987B2 (enrdf_load_stackoverflow) 1990-06-06

Similar Documents

Publication Publication Date Title
EP2039797B1 (en) Sputtering target/backing plate conjunction element
EP0171011B1 (en) Electrostatic chuck
US6162336A (en) Clamping ring design to reduce wafer sticking problem in metal deposition
US20030218054A1 (en) Method for forming sputter target assemblies
EP2264215A2 (en) Copper alloy sputtering target, process for producing the same and semiconductor element wiring
GB2161837A (en) Target plate for cathodic sputter coating
JPS6345368A (ja) スパツタ装置
JPH0726201B2 (ja) 均一な消耗特性を持つ陰極装置
TW400387B (en) Cooling plate for the well type furnaces
KR20050105265A (ko) 물리 기상 증착 챔버에서 이용하도록 구성된 코일 구조 및이 코일 구조의 형성 방법
JPH11504986A (ja) 冷却液を隔離したスパッタリング装置及びそのスパッタリングターゲット
WO1996027689A1 (en) Method and apparatus for cooling a sputtering target
KR910002100B1 (ko) 증착장치용 음극과 타겟전극 조립체
JP2002121662A (ja) 一体構造型スパッタリングターゲット
JP2004270019A (ja) 分割スパッタリングターゲット
CN118497684A (zh) 一种矩形磁控溅射靶以及磁控溅射装置
KR19990014667A (ko) 고립된 냉각제 및 스퍼터링 타겟을 가진 스퍼터링 장치
JPS63277756A (ja) 対向タ−ゲット式スパッタ装置
JPH05112864A (ja) 真空蒸着用水冷坩堝
JPS6065529A (ja) スパッタリング用タ−ゲット
JPH07278807A (ja) スパッタリングターゲット組立体
JPH06172988A (ja) スパッタターゲットのバッキングプレート
JPH02258974A (ja) スパッタリング装置のターゲット及び陰極部
JPS58199643A (ja) 連続鋳造用鋳型
JPS586972A (ja) 電子ビ−ム真空蒸着用ハ−スライナ−