JPS6345368A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS6345368A JPS6345368A JP19010286A JP19010286A JPS6345368A JP S6345368 A JPS6345368 A JP S6345368A JP 19010286 A JP19010286 A JP 19010286A JP 19010286 A JP19010286 A JP 19010286A JP S6345368 A JPS6345368 A JP S6345368A
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- reaction
- sputtering apparatus
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 230000003628 erosive effect Effects 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 9
- 230000003449 preventive effect Effects 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 239000011796 hollow space material Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 7
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000010348 incorporation Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 2
- 208000006558 Dental Calculus Diseases 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010981 turquoise Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明はス・やツタ装置に関し、特にターケ゛ソト周辺
部に改良を施したものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a suction and ivy device, and particularly improves the periphery of the suction.
（従来の技術）
周知の如く、マグネトロンスパッタ装置において、ター
ケ゛ソトのバッキングプレートには、熱電導性、ターグ
ア）との反応性、冷却水による。腐食などの点から主に
Ｃｕが用いられている、第２図に従来のス・やツタ装置
の要部の断面図を示す。(Prior Art) As is well known, in a magnetron sputtering apparatus, a backing plate of turquoise has thermal conductivity, reactivity with tartar, and cooling water. FIG. 2 shows a sectional view of the main parts of a conventional suction and ivy device, in which Cu is mainly used from the viewpoint of corrosion.
図中の１は、表面に環状の溝（エロージョン）２を有す
るターゲットである。このターケ０ット１は、ネジ３を
介して銅製のバッキングプレート４に固定されるととも
に、環状のターゲット押え５（でよって押えられる。1 in the figure is a target having an annular groove (erosion) 2 on its surface. This target 1 is fixed to a copper backing plate 4 via screws 3, and is held down by an annular target presser 5.
ところで、スパッタ装置では放電中、ターゲットはスノ
にツタがスで常にたたかれて高温になるため、バッキン
グプレートは冷却していなければならない。特にムダネ
トロンス／？ツタ装置では、放電領域がある限られた一
部分に集中するため、ターケ゛ノド上の温度分布にも偏
りを生じる。By the way, during discharge in a sputtering apparatus, the target is constantly struck by slats and becomes hot, so the backing plate must be cooled. Especially Mudanetrons/? In the ivy device, since the discharge area is concentrated in a limited part, the temperature distribution on the target node is also biased.
しかしながら、従来のス・！ツタ装置は次に述べる問題
点を有する。即ち、ターゲット１にＡｔ系（Ａ７−８ｉ
など）を用すた場合、ターゲット１のエロージョン２直
下でターゲット１とバッキングプレート４が接合部Ａで
反応し、ターケ０ノド１がバッキングプレート４に接合
する。従って、ターゲット交換時にターゲット１がバッ
キンググレート４から取れなくなる。また、ターデソｌ
ｚ中にバッキングプレート４中の成分であるＣｕが拡散
し、形成された薄膜中に不純物が混入して汚染が生じる
。However, the traditional S! The ivy device has the following problems. That is, target 1 is At-based (A7-8i
etc.), the target 1 and the backing plate 4 react at the joint A just below the erosion 2 of the target 1, and the target 0 and the throat 1 are joined to the backing plate 4. Therefore, target 1 cannot be removed from backing grade 4 during target exchange. Also, Tardeso
Cu, which is a component of the backing plate 4, diffuses into the z, and impurities are mixed into the formed thin film, causing contamination.
（発明が解決しようとする問題点）
本発明は上記事情に鑑みてなされたもので、ターゲット
交換時にターケ°ットをバッキングプレートから容易に
取外しできるとともに、ターク゛ットへのバッキングプ
レート中の不純物の混入を防止し得るス・ンツタ装置を
提供することを目的とする。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and allows the target to be easily removed from the backing plate when replacing the target. It is an object of the present invention to provide a sun-study device that can prevent this.
［発明の構成］
（問題点を解決するだめの手段）
本発明は、少なくとも前記エロージョン直下のターゲッ
ト裏面又は・ぐツキングプレート表面に、ターゲットと
バッキングプレートとの反応を防止する反応防止物を設
けることを特徴とし、ターゲット交換を容易にするとと
もに、ターゲットへのバッキングプレート中の不純物の
侵入を防止できる。[Structure of the Invention] (Means for Solving the Problems) The present invention provides a reaction preventive material for preventing a reaction between the target and the backing plate at least on the back surface of the target directly under the erosion or on the surface of the backing plate. This feature facilitates target replacement and prevents impurities in the backing plate from entering the target.
（作用） 本発明によれば、以下の効果を有する。(effect) According to the present invention, the following effects are achieved.
■反応防止物をバッキンググレート表面又はターゲット
裏面の所定位置に設けるため、ターゲットのエロージョ
ン直下とバクキンググレートの反応を押えることができ
、ターゲットの交換をスムーズにかつ迅速に行なうこと
ができる。(2) Since the reaction preventive material is provided at a predetermined position on the surface of the backing grate or the back surface of the target, it is possible to suppress the reaction between the backing grate and the area directly under the erosion of the target, and the target can be exchanged smoothly and quickly.
■上記の如く反応を押えることができるため、バッキン
グプレート中の不純物がターゲットに混入するのを防止
でき、汚染のない良好な薄膜をウニ・・に形成できる。- Since the reaction can be suppressed as described above, impurities in the backing plate can be prevented from entering the target, and a good thin film without contamination can be formed on the sea urchin.
（実施例） 以下、本発明の一実施例を第１図を参照して説明する。(Example) An embodiment of the present invention will be described below with reference to FIG.
第１図は反応防止物をバンキングプレート表面に形成し
た場合の実施例である。図中の１１は、チャンバーであ
る。このチャンバー１１内の上方には、ウェハ１２を支
持するウェハ支持具としてのプラテン１３が配置されて
いる。前記チャン・ぐ−１１内の下方には、マグネッ）
ｆｌｆ極１４が前記プラテン１３と対向するように配置
されている。FIG. 1 shows an example in which a reaction preventive material is formed on the surface of a banking plate. 11 in the figure is a chamber. A platen 13 serving as a wafer support for supporting the wafer 12 is arranged above the chamber 11 . There is a magnet at the bottom of the above-mentioned Chang-G-11.
The flf pole 14 is arranged to face the platen 13.
このマグネット電極内には水が供給され、電極１４上の
Ｃｕ製のバッキングプレート１５を冷却するようになっ
ている。このバッキンググレート１５の表面でかつ後記
ターゲットのエロージョンの直下には深さ１〜２詣の環
状の溝が設けられ、この溝に反応防止物としてのカーボ
ン製の薄板１６が埋め込まれている。ここで、この薄板
１６の表面と前記バッキングプレート１５の表面は段差
のないなめらかな同−千百とする。前記バッキングプレ
ート１５上には、表面に環状の二ローソ１ン１７を有し
たターゲット１８が設けられている。このターゲット１
８は、その中央部を止めネジ１９によってバッキンググ
レート１５に固定され、周側部をターゲット押え２０に
よって押えられている。Water is supplied into the magnet electrode to cool the backing plate 15 made of Cu on the electrode 14. On the surface of this backing grating 15 and directly below the erosion of the target described later, an annular groove having a depth of 1 to 2 mm is provided, and a thin carbon plate 16 as a reaction preventer is embedded in this groove. Here, the surface of this thin plate 16 and the surface of the backing plate 15 are smooth and have the same shape with no difference in level. A target 18 having an annular rotor 17 on its surface is provided on the backing plate 15. This target 1
8 is fixed to the backing grate 15 by a set screw 19 at its center, and held down by a target presser 20 at its circumferential side.
上記実格例によれば、ターゲット１８の工ｏ −ジョン
１７の直下：て位置するバッキングプレート１５の表面
に溝を設け、この溝にカーボン製の薄板１６を埋め込ん
だ構造となっているため、夕一グントノ８のエロージョ
ン１７の直下とバッキングプレート１５の反応を抑制で
きる。従って、ターケ゛ット１８の交換をスムーズかつ
迅速に行なうことができる。また、その反応が抑えられ
たため、ターケ゛ット１８内への不純物Ｃｕが混入しな
くなり、ウェハ１２に汚染のない良好な薄膜を形成する
ことができた。更に、カーボンの熱電導率は垂直方向で
、Ｃｕより多少小さい程度であるため、冷却能力は従来
技術と同程度であることが期待できる。According to the actual example, a groove is provided on the surface of the backing plate 15 located directly below the groove 17 of the target 18, and a thin carbon plate 16 is embedded in this groove. The reaction between the backing plate 15 and the area directly below the erosion 17 of Yuichi Guntono 8 can be suppressed. Therefore, the target 18 can be replaced smoothly and quickly. Further, since the reaction was suppressed, the impurity Cu was not mixed into the target 18, and a good thin film without contamination could be formed on the wafer 12. Furthermore, since the thermal conductivity of carbon in the vertical direction is somewhat smaller than that of Cu, it can be expected that the cooling capacity will be on the same level as that of the prior art.
なお、本発明に係るスパッタ装置は、上記実施例の場合
に限らず、第３図に示す如く反応防止物をターケ゛ット
の裏面に形成してもよい。但し、ターゲットと／Ｊツキ
ングプレート以外は、第１図と同一なので省略する。エ
ロージョン直下のターゲット裏面には深さ１〜２ｎの環
状の溝が設けられ、この反応防止物としてのカーボン製
の薄板１６が埋め込まれている。ここで、この薄板１６
の表面と前記ターゲット１８の裏面は段差のないなめら
かな同一平面とする。Incidentally, the sputtering apparatus according to the present invention is not limited to the case of the above embodiment, and a reaction preventive material may be formed on the back surface of the target as shown in FIG. However, the components other than the target and the /J coupling plate are the same as in FIG. 1, so their description will be omitted. An annular groove having a depth of 1 to 2n is provided on the back surface of the target directly under the erosion, and a thin carbon plate 16 is embedded therein as a reaction preventive material. Here, this thin plate 16
The front surface of the target 18 and the back surface of the target 18 are made to be the same smooth plane with no step.
なお、上記実施例では反応防止物にカーボンを例に説明
したが、高融点金属またはこれの窒化物、硅化物、炭化
物、ホウ化物さらには溝のみで反応防止物無しでも同様
の効果が期待できる。−また、反応防止物をバッキング
グレートの表面又はターゲット裏面の一部Ｖこ厚みをも
って設けたが、全面に形成してもよいし、厚みも表面処
理のような厚みがほとんどない状態でも同様の効果が期
待できる。In the above example, carbon is used as an example of a reaction preventer, but the same effect can be expected using a high melting point metal or its nitride, silicide, carbide, or boride, or even just a groove without a reaction preventer. . - In addition, although the reaction preventive material was provided on the surface of the backing grating or the back surface of the target to a thickness of V, it may be formed on the entire surface, and the same effect can be achieved even when the thickness is almost non-existent, such as in surface treatment. can be expected.
［発明の効果コ
以上詳述した如く本発明によれば、ターケ゛ノド交換を
スムーズかつ迅速になし得るとともに、ターゲット中へ
のバッキングプレート中の不純物の混入を防止し、しか
も冷却能力を従来技術と同程度に期待し得るスパッタ装
置を提供できる。[Effects of the Invention] As detailed above, according to the present invention, the target can be replaced smoothly and quickly, impurities in the backing plate are prevented from entering the target, and the cooling capacity is the same as that of the conventional technology. A sputtering device that can be expected to a certain extent can be provided.
第１図は本発明の一実施例に係るスパッタ装置の断面図
、第２図は従来のスパッタ装置の要部の断面図、第３図
は本発明の他の実施例に係るスパッタ装置の要部の断面
図である。
１１・・・チャンバー、１２・・・ウェー・、１３・・
・プラテン（ウェハ支持具）、１４・・・マグネット電
極、１５・・・バッキングプレート、１６・・・薄板（
反応防止板）１７・・・エロージョン、１８・・・ター
ゲット、２０・・・ターゲット押え。
出願人代理人 弁理士 鈴 江 武 彦オ（
第１図
第２図FIG. 1 is a cross-sectional view of a sputtering apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of main parts of a conventional sputtering apparatus, and FIG. 3 is a main part of a sputtering apparatus according to another embodiment of the present invention. FIG. 11...Chamber, 12...Way..., 13...
・Platen (wafer support), 14... Magnet electrode, 15... Backing plate, 16... Thin plate (
Reaction prevention plate) 17...Erosion, 18...Target, 20...Target holder. Applicant's agent Patent attorney Takehiko Suzue (Figure 1 Figure 2
Claims (5)
ェハ支持具と、同チャンバー内に前記ウェハ支持具と対
向して設けられたマグネット電極上に設けられたバッキ
ングプレートと、このバッキングプレート上に設けられ
、表面の局在化された領域がエロージョンされるターゲ
ットとを具備したスパッタ装置において、少なくとも前
記エロージョン直下のバッキングプレート表面又はター
ゲット裏面に、ターゲットとバッキングプレートとの反
応を防止する反応防止物を設けたことを特徴とするスパ
ッタ装置。(1) A chamber, a wafer support provided in the chamber, a backing plate provided on a magnet electrode provided in the chamber facing the wafer support, and a backing plate provided on the backing plate. In a sputtering apparatus equipped with a target whose surface is eroded in a localized region, a reaction preventive substance is provided at least on the surface of the backing plate immediately below the erosion or on the back surface of the target to prevent a reaction between the target and the backing plate. A sputtering device characterized in that:
れた高融点金属層またはこれの窒化物、硅化物、炭化物
ホウ化物であることを特徴とする特許請求の範囲第１項
記載のスパッタ装置。(2) The sputtering apparatus according to claim 1, wherein the reaction preventer is a high melting point metal layer provided on the surface of the backing plate or a nitride, silicide, carbide or boride thereof.
点金属層またはこれの窒化物、硅化物、炭化物ホウ化物
であることを特徴とする特許請求の範囲第１項記載のス
パッタ装置。(3) The sputtering apparatus according to claim 1, wherein the reaction preventive material is a high melting point metal layer provided on the back surface of the target or a nitride, silicide, carbide or boride thereof.
ーゲット裏面に設けられた溝に埋め込まれたグラファイ
ト層又は中空であることを特徴とする特許請求の範囲第
１項記載のスパッタ装置。(4) The sputtering apparatus according to claim 1, wherein the reaction preventive material is a graphite layer or hollow space embedded in a groove provided on the backing plate surface or the back surface of the target.
かつバッキングプレートが銅製からなることを特徴とす
る特許請求の範囲第１項記載のスパッタ装置。(5) The material of the target is made of Al or Al alloy,
The sputtering apparatus according to claim 1, wherein the backing plate is made of copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19010286A JPS6345368A (en) | 1986-08-13 | 1986-08-13 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19010286A JPS6345368A (en) | 1986-08-13 | 1986-08-13 | Sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6345368A true JPS6345368A (en) | 1988-02-26 |
| JPH0225987B2 JPH0225987B2 (en) | 1990-06-06 |
Family
ID=16252409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19010286A Granted JPS6345368A (en) | 1986-08-13 | 1986-08-13 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6345368A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03134166A (en) * | 1989-10-20 | 1991-06-07 | Tokyo Electron Ltd | Sputtering device |
| EP0476652A2 (en) * | 1990-09-20 | 1992-03-25 | Fujitsu Limited | Method for depositing thin film on substrate by sputtering process |
| US5286361A (en) * | 1992-10-19 | 1994-02-15 | Regents Of The University Of California | Magnetically attached sputter targets |
| WO2008001547A1 (en) | 2006-06-29 | 2008-01-03 | Nippon Mining & Metals Co., Ltd. | Sputtering target/backing plate conjunction element |
| US10995401B2 (en) * | 2018-12-07 | 2021-05-04 | SK Hynix Inc. | Sputtering target and manufacturing method thereof |
-
1986
- 1986-08-13 JP JP19010286A patent/JPS6345368A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03134166A (en) * | 1989-10-20 | 1991-06-07 | Tokyo Electron Ltd | Sputtering device |
| EP0476652A2 (en) * | 1990-09-20 | 1992-03-25 | Fujitsu Limited | Method for depositing thin film on substrate by sputtering process |
| US5244556A (en) * | 1990-09-20 | 1993-09-14 | Fujitsu Limited | Method for depositing thin film on substrate by sputtering process |
| US5286361A (en) * | 1992-10-19 | 1994-02-15 | Regents Of The University Of California | Magnetically attached sputter targets |
| WO2008001547A1 (en) | 2006-06-29 | 2008-01-03 | Nippon Mining & Metals Co., Ltd. | Sputtering target/backing plate conjunction element |
| JP4879986B2 (en) * | 2006-06-29 | 2012-02-22 | Ｊｘ日鉱日石金属株式会社 | Sputtering target / backing plate assembly |
| US10995401B2 (en) * | 2018-12-07 | 2021-05-04 | SK Hynix Inc. | Sputtering target and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0225987B2 (en) | 1990-06-06 |
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