JPS63312976A - Magnetron sputtering device - Google Patents
Magnetron sputtering deviceInfo
- Publication number
- JPS63312976A JPS63312976A JP15065087A JP15065087A JPS63312976A JP S63312976 A JPS63312976 A JP S63312976A JP 15065087 A JP15065087 A JP 15065087A JP 15065087 A JP15065087 A JP 15065087A JP S63312976 A JPS63312976 A JP S63312976A
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- magnetron sputtering
- contact
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 11
- 239000002826 coolant Substances 0.000 claims abstract description 6
- 239000003507 refrigerant Substances 0.000 claims 1
- 238000005336 cracking Methods 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はマグネトロンスパッタ装置に使用されるターゲ
ットのバッキングプレートに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a backing plate for a target used in a magnetron sputtering apparatus.
従来の技術
プレーナ型マグネトロンスパッタ装置を例にとると、従
来のバッキングプレートは第６図の１に示すように無酸
素鋼を用いた平板が使用されていた０
第６図において、２はターゲット、３は磁石、４はシー
ルドリングであり、バッキングプレート１およびターゲ
ット２は、通常は水を冷却媒体として冷却されている。Conventional technology Taking a planar type magnetron sputtering device as an example, the conventional backing plate is a flat plate made of oxygen-free steel as shown in 1 in Fig. 6. In Fig. 6, 2 is a target; 3 is a magnet, 4 is a shield ring, and the backing plate 1 and target 2 are normally cooled using water as a cooling medium.
承知のようにマグネトロンスパッタ装置は磁石３により
生じる磁界６により高密度なプラズマを発生させ、成膜
速度の大幅な向上を達成している。As is well known, the magnetron sputtering apparatus generates high-density plasma using the magnetic field 6 generated by the magnet 3, thereby achieving a significant improvement in the film formation rate.
ところが、ターゲット２表面上での磁界が不均一なため
に破線で示したようにターゲット２の一部が主に侵食さ
れてしまう。However, because the magnetic field on the surface of the target 2 is non-uniform, a portion of the target 2 is mainly eroded as shown by the broken line.
この主に侵食されている部分にはアルゴンイオン等の不
活性ガスイオンが大量に衝突しており、イオンの持つ運
動エネルギの大部分がこの場所で熱に変換されている。A large amount of inert gas ions such as argon ions collide with this mainly eroded area, and most of the kinetic energy of the ions is converted into heat at this location.
発明が解決しようとする問題点
ターゲットの主に侵食されている部分が他の部分に比べ
て熱が集中してしまい、ターゲット上の温度分布が第６
図に示すように著しく不均一になってしまう。そのため
に、成膜速度の向上を目的として放電電力を大きくする
と、ターゲットの主に侵食している部分とそれ以外の部
分とでターゲットに熱歪が発生し、ターゲットが割れて
しまうという問題点があった。Problem to be solved by the invention Heat is concentrated in the mainly eroded part of the target compared to other parts, and the temperature distribution on the target is
As shown in the figure, it becomes extremely non-uniform. Therefore, when the discharge power is increased with the aim of improving the film formation rate, there is a problem that thermal distortion occurs in the target between the mainly eroded part and the other parts, resulting in the target cracking. there were.
本発明はかかる点に鑑み、ターゲット上での熱の集中を
防ぎ、ターゲットの割れを生じることなく大電力での放
電を可能として成膜速度を向上することのできるバッキ
ングプレートを提供することを目的とする。In view of this, an object of the present invention is to provide a backing plate that prevents heat concentration on the target, enables discharge at high power without causing cracks in the target, and improves the film formation rate. shall be.
問題点を解決するための手段
本発明は、ターゲットを固定したバッキングプレートの
冷却用媒体が主に侵食される部分が接触される部分にお
いて、前記ターゲットの侵食される部分において表面積
を他の部分より大きくしたマグネトロンスパッタ装置で
ある。Means for Solving the Problems The present invention provides that, in a portion of a backing plate on which a target is fixed, where the cooling medium mainly comes into contact with the eroded portion, the surface area of the eroded portion of the target is made larger than that of other portions. This is a larger magnetron sputtering device.
作 用
上記のようにバッキングプレートの表面積を変えること
により、ターゲット全体にわたって温度分布が均一化さ
れる。また、集中した熱の放散をより効果的にする。Effect By changing the surface area of the backing plate as described above, the temperature distribution is made uniform over the entire target. It also makes the dissipation of concentrated heat more effective.
実施例
本発明の一実施例を第１図に示す。図中の番号は従来例
と同一なので同一番号を付し一部説明は省略する。Embodiment An embodiment of the present invention is shown in FIG. Since the numbers in the figure are the same as those of the conventional example, the same numbers are given and some explanations are omitted.
本実施例ではターゲット２の主に侵食される破線の部分
を薄く、他の部分を厚く階段状に形成している。すなわ
ちバッキングプレートに凹部６を形成して、その部分の
冷却媒体と接触する面積を大きくしている。こうするこ
とにより熱の集中する部分、すなわちターゲット２が主
に侵食される破線部分の熱を冷却水等の冷却用媒体によ
りすみやかに冷却される。そのため、ターゲット２の温
度分布を第２図に示すごとく均一化することができ、熱
歪によるターゲットの割れを防ぐことができる。In this embodiment, the part of the target 2 that is mainly eroded by the broken line is made thin, and the other parts are made thick and stepped. That is, the recessed portion 6 is formed in the backing plate to increase the area of that portion that comes into contact with the cooling medium. By doing so, the heat in the portion where the heat is concentrated, that is, the portion indicated by the broken line where the target 2 is mainly eroded, is quickly cooled down by a cooling medium such as cooling water. Therefore, the temperature distribution of the target 2 can be made uniform as shown in FIG. 2, and cracking of the target due to thermal strain can be prevented.
また、本発明のバッキングプレートの他の実施例を第３
図および第４図に示す。第３図ａ、ｂおよび第４図ａ、
ｂはバッキングプレート１の下面図と断面図であるが、
第１図の実施例のバッキングプレート１の薄く形成した
部分の冷却媒体に面する面に第３図では円柱状突起７、
第４図では同心円状の凸条８を設けている。In addition, other embodiments of the backing plate of the present invention are shown in the third example.
As shown in FIG. Figure 3 a, b and Figure 4 a,
b is a bottom view and a sectional view of the backing plate 1,
In the embodiment shown in FIG. 1, a cylindrical projection 7 is shown in FIG.
In FIG. 4, concentric protrusions 8 are provided.
この突起６により、バッキングプレート１の厚さの薄い
部分に集中する熱をより効果的に放散できる０
なお、実施例では円形のバッキングプレートを用いてい
たが、本発明のバッキングプレートは円形に限るもので
はない。These protrusions 6 can more effectively dissipate the heat concentrated in the thin portion of the backing plate 10. Note that although a circular backing plate was used in the embodiment, the backing plate of the present invention is limited to a circular shape. It's not a thing.
また、突起についても本実施例で示した形状に限るもの
ではない。Furthermore, the shape of the protrusion is not limited to that shown in this embodiment.
発明の効果
本発明により、大電力放電時に熱の集中によりターゲッ
トが割れるという問題点を解決できる。Effects of the Invention According to the present invention, it is possible to solve the problem that the target cracks due to concentration of heat during high power discharge.
その結果として、大電力放電によって成膜速度を向上で
きる。As a result, the deposition rate can be improved by high power discharge.
第１図は本発明の一実施例のマグネトロンスパッタ装置
の概略構成図、第２図は従来例装置におけるターゲット
と温度分布の関係図、第３図および第４図は本発明の異
なる実施例の装置におけるバッキングプレートの構成図
、第６図は従来例のマグネトロンスパッタ装置の概略構
成図、第６図は従来装置におけるターゲットと温度分布
の関係図である。
１・・・・・・バッキングプレート、２・・・・・・タ
ーゲット、３・・・・・・磁石、４・・・・・・シール
ドリング、６・・・・・・凹部、７・・・・・・突起、
８・・・・・・凸条。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第
１ 図 ／ −一
一パッキングブレート第２図
第３図
第４図
１１？ ／
第５図
第６図FIG. 1 is a schematic configuration diagram of a magnetron sputtering apparatus according to an embodiment of the present invention, FIG. 2 is a diagram showing the relationship between a target and temperature distribution in a conventional apparatus, and FIGS. 3 and 4 are diagrams of different embodiments of the present invention. FIG. 6 is a schematic diagram of a conventional magnetron sputtering apparatus, and FIG. 6 is a diagram showing the relationship between a target and temperature distribution in the conventional apparatus. DESCRIPTION OF SYMBOLS 1...Backing plate, 2...Target, 3...Magnet, 4...Shield ring, 6...Recess, 7... ····protrusion,
8... Convex stripes. Name of agent: Patent attorney Toshio Nakao and 1 other person
1 Figure / -11 Packing plate Figure 2 Figure 3 Figure 4 Figure 11? / Figure 5 Figure 6
Claims (3)
定し、前記バッキングプレートの他面において、前記タ
ーゲットの主に侵食される部分に対応する領域の、当該
バッキングプレートの冷却媒体と接触する表面積を他の
領域より大きくし、前記バッキングプレートの他面に冷
媒を接触させることを特徴とするマグネトロンスパッタ
装置。(1) A target is fixed in contact with one surface of the backing plate, and on the other surface of the backing plate, the surface area of the backing plate that comes into contact with the cooling medium in the area corresponding to the mainly eroded part of the target is A magnetron sputtering apparatus characterized in that the refrigerant is brought into contact with the other surface of the backing plate.
を形成してなることを特徴とする特許請求の範囲第１項
記載のマグネトロンスパッタ装置。(2) The magnetron sputtering apparatus according to claim 1, wherein the region of the backing plate having a large surface area is formed by forming a recess.
設けた特許請求の範囲第２項記載のマグネトロンスパッ
タ装置。(3) The magnetron sputtering apparatus according to claim 2, wherein a projection or a protrusion is provided in the recessed portion of the backing plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15065087A JPS63312976A (en) | 1987-06-17 | 1987-06-17 | Magnetron sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15065087A JPS63312976A (en) | 1987-06-17 | 1987-06-17 | Magnetron sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63312976A true JPS63312976A (en) | 1988-12-21 |
Family
ID=15501479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15065087A Pending JPS63312976A (en) | 1987-06-17 | 1987-06-17 | Magnetron sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63312976A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021139A (en) * | 1989-11-11 | 1991-06-04 | Leybold Aktiengesellschaft | Cathode sputtering apparatus |
| US5180478A (en) * | 1990-12-19 | 1993-01-19 | Intevac, Inc. | Sputter coating source |
| US5628889A (en) * | 1994-09-06 | 1997-05-13 | International Business Machines Corporation | High power capacity magnetron cathode |
| JP2006503984A (en) * | 2002-10-24 | 2006-02-02 | ハネウエル・インターナシヨナル・インコーポレーテツド | Target design and related methods for improving cooling capacity and reducing deflection and deformation |
| JP2007254827A (en) * | 2006-03-23 | 2007-10-04 | Fujitsu Ltd | Sputtering system and sputtering method |
| JP2011219824A (en) * | 2010-04-09 | 2011-11-04 | Sumitomo Heavy Ind Ltd | Film deposition apparatus and target device |
| US8647484B2 (en) * | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
-
1987
- 1987-06-17 JP JP15065087A patent/JPS63312976A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021139A (en) * | 1989-11-11 | 1991-06-04 | Leybold Aktiengesellschaft | Cathode sputtering apparatus |
| US5180478A (en) * | 1990-12-19 | 1993-01-19 | Intevac, Inc. | Sputter coating source |
| US5628889A (en) * | 1994-09-06 | 1997-05-13 | International Business Machines Corporation | High power capacity magnetron cathode |
| JP2006503984A (en) * | 2002-10-24 | 2006-02-02 | ハネウエル・インターナシヨナル・インコーポレーテツド | Target design and related methods for improving cooling capacity and reducing deflection and deformation |
| JP2011052325A (en) * | 2002-10-24 | 2011-03-17 | Honeywell Internatl Inc | Target design and related method for enhanced cooling and reduced deflection and deformation |
| JP2014051746A (en) * | 2002-10-24 | 2014-03-20 | Honeywell Internatl Inc | Design of target capable of increasing cooling capability and decreasing deflection and deformation and related methods for the same |
| US8647484B2 (en) * | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
| JP2007254827A (en) * | 2006-03-23 | 2007-10-04 | Fujitsu Ltd | Sputtering system and sputtering method |
| JP2011219824A (en) * | 2010-04-09 | 2011-11-04 | Sumitomo Heavy Ind Ltd | Film deposition apparatus and target device |
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