JPH0225987B2 - - Google Patents
Info
- Publication number
- JPH0225987B2 JPH0225987B2 JP19010286A JP19010286A JPH0225987B2 JP H0225987 B2 JPH0225987 B2 JP H0225987B2 JP 19010286 A JP19010286 A JP 19010286A JP 19010286 A JP19010286 A JP 19010286A JP H0225987 B2 JPH0225987 B2 JP H0225987B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- reaction
- sputtering device
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 9
- 230000003449 preventive effect Effects 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 239000011796 hollow space material Substances 0.000 claims 1
- 238000005477 sputtering target Methods 0.000 claims 1
- 239000013077 target material Substances 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000011109 contamination Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明はスパツタ装置に関し、特にターゲツト
周辺部に改良を施したものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a sputtering device, and particularly to a sputtering device that has been improved in the vicinity of the target.
（従来の技術）
周知の如く、マグネトロンスパツタ装置におい
て、ターゲツトのバツキングプレートには、熱電
導性、ターゲツトとの反応性、冷却水による腐食
などの点から主にCuが用いられている。第２図
に従来のスパツタ装置の要部の断面図を示す。(Prior Art) As is well known, in magnetron sputtering devices, Cu is mainly used for the backing plate of the target due to its thermal conductivity, reactivity with the target, and resistance to corrosion by cooling water. FIG. 2 shows a sectional view of the main parts of a conventional sputtering device.
図中の１は、表面に環状の溝（エロージヨン）
２を有するターゲツトである。このターゲツト１
は、ネジ３を介して銅製のバツキングプレート４
に固定されるとともに、環状のターゲツト押え５
によつて押えられる。 1 in the figure is an annular groove (erosion) on the surface.
The target has a value of 2. This target 1
Attach the copper bucking plate 4 through the screw 3.
An annular target presser 5
be held down by
ところで、スパツタ装置では放電中、ターゲツ
トはスパツタガスで常にたたかれて高温になるた
め、バツキングプレートは冷却していなければな
らない。特にムグネトロンスパツタ装置では、放
電領域がある限られた一部分に集中するため、タ
ーゲツト上の温度分布にも偏りを生じる。 By the way, during discharge in a sputtering device, the target is constantly hit by sputtering gas and becomes hot, so the backing plate must be cooled. In particular, in a magnetron sputtering device, since the discharge area is concentrated in a certain limited part, the temperature distribution on the target also becomes uneven.
しかしながら、従来のスパツタ装置は次に述べ
る問題点を有する。即ち、ターゲツト１にAl系
（Al−Siなど）を用いた場合、ターゲツト１のエ
ロージヨン２直下でターゲツト１とバツキングプ
レート４が接合部Ａで反応し、ターゲツト１がバ
ツキングプレート４に接合する。従つて、ターゲ
ツト交換時にターゲツト１がバツキングプレート
４から取れなくなる。また、ターゲツト１中にバ
ツキングプレート４中の成分であるCuが拡散し、
形成された薄膜中に不純物が混入して汚染が生じ
る。 However, the conventional sputtering apparatus has the following problems. That is, when Al-based material (such as Al-Si) is used for the target 1, the target 1 and the backing plate 4 react at the joint A just below the erosion 2 of the target 1, and the target 1 is joined to the backing plate 4. . Therefore, the target 1 cannot be removed from the backing plate 4 when replacing the target. In addition, Cu, which is a component of the bucking plate 4, diffuses into the target 1,
Impurities get mixed into the formed thin film, causing contamination.
（発明が解決しようとする問題点）
本発明は上記事情に鑑みてなされたもので、タ
ーゲツト交換時にターゲツトをバツキングプレー
トから容易に取外しできるとともに、ターゲツト
へのバツキングプレート中の不純物の混入を防止
し得るスパツタ装置を提供することを目的とす
る。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and allows the target to be easily removed from the backing plate when replacing the target, and prevents impurities in the backing plate from entering the target. It is an object of the present invention to provide a sputtering device that can prevent sputtering.
［発明の構成］
（問題点を解決するための手段）
本発明は、少なくとも前記エロージヨン直下の
ターゲツト裏面又はバツキングプレート表面に、
ターゲツトとバツキングプレートとの反応を防止
する反応防止物を設けることを特徴とし、ターゲ
ツト交換を容易にするとともに、ターゲツトへの
バツキングプレート中の不純物の侵入を防止でき
る。[Structure of the Invention] (Means for Solving the Problems) The present invention provides at least the following:
It is characterized by the provision of a reaction preventer that prevents the reaction between the target and the backing plate, which facilitates target exchange and prevents impurities in the backing plate from entering the target.
（作用） 本発明によれば、以下の効果を有する。(effect) According to the present invention, the following effects are achieved.
反応防止物をバツキングプレート表面又はタ
ーゲツト裏面の所定位置に設けるため、ターゲ
ツトのエロージヨン直下とバツキングプレート
の反応を押えることができ、ターゲツトの交換
をスムーズにかつ迅速に行なうことができる。 Since the reaction preventive material is provided at a predetermined position on the surface of the backing plate or the back surface of the target, it is possible to suppress the reaction between the backing plate and the area directly below the erosion of the target, and the target can be exchanged smoothly and quickly.
上記の如く反応を押えることができるため、
バツキングプレート中の不純物がターゲツトに
混入するのを防止でき、汚染のない良好な薄膜
をウエハに形成できる。 Because the reaction can be suppressed as described above,
Impurities in the backing plate can be prevented from entering the target, and a good thin film without contamination can be formed on the wafer.
（実施例）
以下、本発明の一実施例を第１図を参照して説
明する。(Example) An example of the present invention will be described below with reference to FIG.
第１図は反応防止物をバツキングプレート表面
に形成した場合の実施例である。図中の１１は、
チヤンバーである。このチヤンバー１１内の上方
には、ウエハ１２を支持するウエハ支持具として
のプラテン１３が配置されている。前記チヤンバ
ー１１内の下方には、マグネツト電極１４が前記
プラテン１３と対向するように配置されている。
このマグネツト電極内には水が供給され、電極１
４上のCu製のバツキングプレート１５を冷却す
るようになつている。このバツキングプレート１
５の表面でかつ後記ターゲツトのエロージヨンの
直下には深さ１〜２mmの環状の溝が設けられ、こ
の溝に反応防止物としてのカーボン製の薄板１６
が埋め込まれている。ここで、この薄板１６の表
面と前記バツキングプレート１５の表面は段差の
ないなめらかな同一平面とする。前記バツキング
プレート１５上には、表面に環状のエロージヨン
１７を有したターゲツト１８が設けられている。
このターゲツト１８は、その中央部を止めネジ１
９によつてバツキングプレート１５に固定され、
周側部をターゲツト押え２０によつて押えられて
いる。 FIG. 1 shows an example in which a reaction preventive material is formed on the surface of a backing plate. 11 in the figure is
It is a chamber. A platen 13 serving as a wafer support for supporting the wafer 12 is arranged above the chamber 11 . A magnet electrode 14 is disposed in the lower part of the chamber 11 so as to face the platen 13.
Water is supplied into this magnetic electrode, and electrode 1
The backing plate 15 made of Cu on top of the cooling plate 4 is cooled. This bucking plate 1
An annular groove with a depth of 1 to 2 mm is provided on the surface of 5 and directly below the erosion of the target to be described later, and a thin carbon plate 16 as a reaction preventer is placed in this groove.
is embedded. Here, the surface of this thin plate 16 and the surface of the backing plate 15 are made to be the same smooth plane without any difference in level. A target 18 having an annular erosion 17 on its surface is provided on the backing plate 15.
The center of this target 18 is fixed with a set screw 1.
9 is fixed to the bucking plate 15,
The peripheral side portion is held down by a target holder 20.
上記実施例によれば、ターゲツト１８のエロー
ジヨン１７の直下に位置するバツキングプレート
１５の表面に溝を設け、この溝にカーボン製の薄
板１６を埋め込んだ構造となつているため、ター
ゲツト１８のエロージヨン１７の直下とバツキン
グプレート１５の反応を抑制できる。従つて、タ
ーゲツト１８の交換をスムーズかつ迅速に行なう
ことができる。また、その反応が抑えられたた
め、ターゲツト１８内への不純物Cuが混入しな
くなり、ウエハ１２に汚染のない良好な薄膜を形
成することができた。更に、カーボンの熱電導率
は垂直方向で、Cuより多少小さい程度であるた
め、冷却能力は従来技術と同程度であることが期
待できる。 According to the above embodiment, a groove is provided on the surface of the backing plate 15 located directly below the erosion 17 of the target 18, and the thin carbon plate 16 is embedded in this groove. 17 and the reaction between the backing plate 15 and the backing plate 15 can be suppressed. Therefore, the target 18 can be replaced smoothly and quickly. Further, since the reaction was suppressed, the impurity Cu was not mixed into the target 18, and a good thin film without contamination could be formed on the wafer 12. Furthermore, since the thermal conductivity of carbon in the vertical direction is somewhat smaller than that of Cu, it can be expected that the cooling capacity will be on the same level as that of the conventional technology.
なお、本発明に係るスパツタ装置は、上記実施
例の場合に限らず、第３図に示す如く反応防止物
をターゲツトの裏面に形成してもよい。但し、タ
ーゲツトとバツキングプレート以外は、第１図と
同一なので省略する。エロージヨン直下のターゲ
ツト裏面には深さ１〜２mmの環状の溝が設けら
れ、この反応防止物としてのカーボン製の薄板１
６が埋め込まれている。ここで、この薄板１６の
表面と前記ターゲツト１８の裏面は段差のないな
めらかな同一平面とする。 Incidentally, the sputtering apparatus according to the present invention is not limited to the case of the above embodiment, and a reaction preventive material may be formed on the back surface of the target as shown in FIG. However, the parts other than the target and bucking plate are the same as in FIG. 1, so they are omitted. An annular groove with a depth of 1 to 2 mm is provided on the back surface of the target just below the erosion, and a thin carbon plate 1 is used as a reaction preventive material.
6 is embedded. Here, the front surface of this thin plate 16 and the back surface of the target 18 are made to be the same smooth plane with no step.
なお、上記実施例では反応防止物にカーボンを
例に説明したが、高融点金属またはこれの窒化
物、硅化物、炭化物、ホウ化物さらには溝のみで
反応防止物無しでも同様の効果が期待できる。ま
た、反応防止物をバツキングプレートの表面又は
ターゲツト裏面の一部に厚みをもつて設けたが、
全面に形成してもよいし、厚みも表面処理のよう
な厚みがほとんどない状態でも同様の効果が期待
できる。 In the above example, carbon is used as an example of a reaction preventer, but the same effect can be expected using a high melting point metal or its nitride, silicide, carbide, or boride, or even just a groove without a reaction preventer. . In addition, a reaction preventive material was provided thickly on the surface of the backing plate or on a part of the back surface of the target.
It may be formed on the entire surface, and the same effect can be expected even when the thickness is almost non-existent, such as in the case of surface treatment.
［発明の効果］
以上詳述した如く本発明によれば、ターゲツト
交換をスムーズかつ迅速になし得るとともに、タ
ーゲツト中へのバツキングプレート中の不純物の
混入を防止し、しかも冷却能力を従来技術と同程
度に期待し得るスパツタ装置を提供できる。[Effects of the Invention] As detailed above, according to the present invention, targets can be replaced smoothly and quickly, impurities in the backing plate can be prevented from entering the target, and the cooling capacity has been improved compared to the conventional technology. It is possible to provide a sputtering device that is equally promising.
第１図は本発明の一実施例に係るスパツタ装置
の断面図、第２図は従来のスパツタ装置の要部の
断面図、第３図は本発明の他の実施例に係るスパ
ツタ装置の要部の断面図である。
１１……チヤンバー、１２……ウエハ、１３…
…プラテン（ウエハ支持具）、１４……マグネツ
ト電極、１５……バツキングプレート、１６……
薄板（反応防止板）、１７……エロージヨン、１
８……ターゲツト、２０……ターゲツト押え。
FIG. 1 is a sectional view of a sputtering device according to an embodiment of the present invention, FIG. 2 is a sectional view of main parts of a conventional sputtering device, and FIG. 3 is a main part of a sputtering device according to another embodiment of the present invention. FIG. 11...chamber, 12...wafer, 13...
...Platen (wafer support), 14...Magnetic electrode, 15...Backing plate, 16...
Thin plate (reaction prevention plate), 17... Erosion, 1
8...Target, 20...Target hold.
Claims (1)
たウエハ支持具と、同チヤンバー内に前記ウエハ
支持具と対向して設けられたマグネツト電極上に
設けられたバツキングプレートと、このバツキン
グプレート上に設けられ、表面の局在化された領
域がエロージヨンされるターゲツトとを具備した
スパツタ装置において、少なくとも前記エロージ
ヨン直下のバツキングプレート表面又はターゲツ
ト裏面に、ターゲツトとバツキングプレートとの
反応を防止する反応防止物を設けたことを特徴と
するスパツタ装置。 ２ 反応防止物が、バツキングプレート表面に設
けられた高融点金属層またはこれの窒化物、硅化
物、炭化物ホウ化物であることを特徴とする特許
請求の範囲第１項記載のスパツタ装置。 ３ 反応防止物が、ターゲツト裏面に設けられた
高融点金属層またはこれの窒化物、硅化物、炭化
物ホウ化物であることを特徴とする特許請求の範
囲第１項記載のスパツタ装置。 ４ 反応防止物が、バツキングプレート表面又
は、ターゲツト裏面に設けられた溝に埋め込まれ
たグラフアイト層又は中空であることを特徴とす
る特許請求の範囲第１項記載のスパツタ装置。 ５ ターゲツトの材料がAl又はAl合金からなり、
かつバツキングプレートが銅製からなることを特
徴とする特許請求の範囲第１項記載のスパツタ装
置。[Scope of Claims] 1. A chamber, a wafer support provided in the chamber, a backing plate provided on a magnetic electrode provided in the chamber facing the wafer support, and In a sputtering device equipped with a target provided on a backing plate and having a localized area of the surface eroded, the sputtering device is equipped with a sputtering target that is provided on a backing plate and has a localized area on its surface eroded. A sputtering device characterized by being provided with a reaction preventer for preventing a reaction. 2. The sputtering apparatus according to claim 1, wherein the reaction preventive material is a high melting point metal layer provided on the surface of the backing plate or a nitride, silicide, carbide or boride thereof. 3. The sputtering apparatus according to claim 1, wherein the reaction preventive material is a high melting point metal layer provided on the back surface of the target or a nitride, silicide, carbide or boride thereof. 4. The sputtering device according to claim 1, wherein the reaction preventive material is a graphite layer or hollow space embedded in a groove provided on the surface of the backing plate or the back surface of the target. 5 The target material is made of Al or Al alloy,
2. The sputtering device according to claim 1, wherein the backing plate is made of copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19010286A JPS6345368A (en) | 1986-08-13 | 1986-08-13 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19010286A JPS6345368A (en) | 1986-08-13 | 1986-08-13 | Sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6345368A JPS6345368A (en) | 1988-02-26 |
| JPH0225987B2 true JPH0225987B2 (en) | 1990-06-06 |
Family
ID=16252409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19010286A Granted JPS6345368A (en) | 1986-08-13 | 1986-08-13 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6345368A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2756158B2 (en) * | 1989-10-20 | 1998-05-25 | 東京エレクトロン株式会社 | Sputtering equipment |
| JPH0774436B2 (en) * | 1990-09-20 | 1995-08-09 | 富士通株式会社 | Thin film formation method |
| US5286361A (en) * | 1992-10-19 | 1994-02-15 | Regents Of The University Of California | Magnetically attached sputter targets |
| KR101040076B1 (en) | 2006-06-29 | 2011-06-09 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | Sputtering target/backing plate conjunction element |
| KR20200069884A (en) * | 2018-12-07 | 2020-06-17 | 에스케이하이닉스 주식회사 | Sputtering target and manufacturing method thereof |
-
1986
- 1986-08-13 JP JP19010286A patent/JPS6345368A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6345368A (en) | 1988-02-26 |
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