JPS6342418B2 - - Google Patents

Info

Publication number
JPS6342418B2
JPS6342418B2 JP56154614A JP15461481A JPS6342418B2 JP S6342418 B2 JPS6342418 B2 JP S6342418B2 JP 56154614 A JP56154614 A JP 56154614A JP 15461481 A JP15461481 A JP 15461481A JP S6342418 B2 JPS6342418 B2 JP S6342418B2
Authority
JP
Japan
Prior art keywords
layer
crystal semiconductor
semiconductor layer
scribe line
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56154614A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5856362A (ja
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56154614A priority Critical patent/JPS5856362A/ja
Priority to US06/425,644 priority patent/US4489478A/en
Priority to DE8282305160T priority patent/DE3278549D1/de
Priority to EP82305160A priority patent/EP0076161B1/en
Publication of JPS5856362A publication Critical patent/JPS5856362A/ja
Publication of JPS6342418B2 publication Critical patent/JPS6342418B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56154614A 1981-09-29 1981-09-29 半導体装置の製造方法 Granted JPS5856362A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56154614A JPS5856362A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法
US06/425,644 US4489478A (en) 1981-09-29 1982-09-28 Process for producing a three-dimensional semiconductor device
DE8282305160T DE3278549D1 (en) 1981-09-29 1982-09-29 Process for manufacturing a multi-layer semiconductor device
EP82305160A EP0076161B1 (en) 1981-09-29 1982-09-29 Process for manufacturing a multi-layer semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56154614A JPS5856362A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5856362A JPS5856362A (ja) 1983-04-04
JPS6342418B2 true JPS6342418B2 (enrdf_load_stackoverflow) 1988-08-23

Family

ID=15588030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56154614A Granted JPS5856362A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5856362A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100615085B1 (ko) * 2004-01-12 2006-08-22 삼성전자주식회사 노드 콘택 구조체들, 이를 채택하는 반도체소자들, 이를채택하는 에스램 셀들 및 이를 제조하는 방법들

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54162452A (en) * 1978-06-13 1979-12-24 Mitsubishi Electric Corp Manufacture of semiconductor and its unit
JPS5678155A (en) * 1979-11-30 1981-06-26 Hitachi Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS5856362A (ja) 1983-04-04

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