JPS6342417B2 - - Google Patents
Info
- Publication number
- JPS6342417B2 JPS6342417B2 JP56041328A JP4132881A JPS6342417B2 JP S6342417 B2 JPS6342417 B2 JP S6342417B2 JP 56041328 A JP56041328 A JP 56041328A JP 4132881 A JP4132881 A JP 4132881A JP S6342417 B2 JPS6342417 B2 JP S6342417B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- single crystal
- scribe line
- crystal silicon
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 51
- 239000013078 crystal Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 15
- 239000011229 interlayer Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920005591 polysilicon Polymers 0.000 description 22
- 238000000034 method Methods 0.000 description 21
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56041328A JPS57155764A (en) | 1981-03-20 | 1981-03-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56041328A JPS57155764A (en) | 1981-03-20 | 1981-03-20 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57155764A JPS57155764A (en) | 1982-09-25 |
| JPS6342417B2 true JPS6342417B2 (fr) | 1988-08-23 |
Family
ID=12605445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56041328A Granted JPS57155764A (en) | 1981-03-20 | 1981-03-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57155764A (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5853822A (ja) * | 1981-09-25 | 1983-03-30 | Toshiba Corp | 積層半導体装置 |
| JPS5892211A (ja) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS5996761A (ja) * | 1982-11-25 | 1984-06-04 | Mitsubishi Electric Corp | 多段構造半導体装置 |
| JPS6074553A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | 半導体装置とその製造方法 |
| JPH0851109A (ja) * | 1994-04-11 | 1996-02-20 | Texas Instr Inc <Ti> | 酸化物でパターン化されたウェーハの窓内にエピタキシャルシリコンを成長させる方法 |
| US8247317B2 (en) * | 2009-09-16 | 2012-08-21 | Applied Materials, Inc. | Methods of solid phase recrystallization of thin film using pulse train annealing method |
-
1981
- 1981-03-20 JP JP56041328A patent/JPS57155764A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57155764A (en) | 1982-09-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0036137B1 (fr) | Procédé de fabrication de dispositifs à semi-conducteurs | |
| US5371381A (en) | Process for producing single crystal semiconductor layer and semiconductor device produced by said process | |
| US5310446A (en) | Method for producing semiconductor film | |
| JPS643045B2 (fr) | ||
| JP4203141B2 (ja) | 非晶質シリコン層の結晶化方法及びこれを使用する薄膜トランジスターの製造方法 | |
| JPS6342417B2 (fr) | ||
| JPH02864B2 (fr) | ||
| JP2699325B2 (ja) | 半導体装置の製造方法 | |
| JPH0376017B2 (fr) | ||
| JP2526380B2 (ja) | 多層半導体基板の製造方法 | |
| JPH0257337B2 (fr) | ||
| JPH0236050B2 (fr) | ||
| JPS58175844A (ja) | 半導体装置の製造方法 | |
| JPS61166074A (ja) | 絶縁ゲ−ト型トランジスタ及びその製造方法 | |
| JPS60126814A (ja) | 半導体装置の製造方法 | |
| JPS5893224A (ja) | 半導体単結晶膜の製造方法 | |
| JPH03284831A (ja) | 半導体薄膜の形成方法 | |
| JPH0573324B2 (fr) | ||
| JPS61116821A (ja) | 単結晶薄膜の形成方法 | |
| JPS629212B2 (fr) | ||
| JPH0368532B2 (fr) | ||
| JPH0560668B2 (fr) | ||
| JPS63300510A (ja) | 積層型半導体装置 | |
| JPS643047B2 (fr) | ||
| JPH0243331B2 (fr) |