JPS6342417B2 - - Google Patents

Info

Publication number
JPS6342417B2
JPS6342417B2 JP56041328A JP4132881A JPS6342417B2 JP S6342417 B2 JPS6342417 B2 JP S6342417B2 JP 56041328 A JP56041328 A JP 56041328A JP 4132881 A JP4132881 A JP 4132881A JP S6342417 B2 JPS6342417 B2 JP S6342417B2
Authority
JP
Japan
Prior art keywords
layer
single crystal
scribe line
crystal silicon
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56041328A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57155764A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56041328A priority Critical patent/JPS57155764A/ja
Publication of JPS57155764A publication Critical patent/JPS57155764A/ja
Publication of JPS6342417B2 publication Critical patent/JPS6342417B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP56041328A 1981-03-20 1981-03-20 Manufacture of semiconductor device Granted JPS57155764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56041328A JPS57155764A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56041328A JPS57155764A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57155764A JPS57155764A (en) 1982-09-25
JPS6342417B2 true JPS6342417B2 (en:Method) 1988-08-23

Family

ID=12605445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56041328A Granted JPS57155764A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57155764A (en:Method)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853822A (ja) * 1981-09-25 1983-03-30 Toshiba Corp 積層半導体装置
JPS5892211A (ja) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp 半導体装置の製造方法
JPS5996761A (ja) * 1982-11-25 1984-06-04 Mitsubishi Electric Corp 多段構造半導体装置
JPS6074553A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体装置とその製造方法
JPH0851109A (ja) * 1994-04-11 1996-02-20 Texas Instr Inc <Ti> 酸化物でパターン化されたウェーハの窓内にエピタキシャルシリコンを成長させる方法
US8247317B2 (en) * 2009-09-16 2012-08-21 Applied Materials, Inc. Methods of solid phase recrystallization of thin film using pulse train annealing method

Also Published As

Publication number Publication date
JPS57155764A (en) 1982-09-25

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