JPS6339108B2 - - Google Patents
Info
- Publication number
- JPS6339108B2 JPS6339108B2 JP55124245A JP12424580A JPS6339108B2 JP S6339108 B2 JPS6339108 B2 JP S6339108B2 JP 55124245 A JP55124245 A JP 55124245A JP 12424580 A JP12424580 A JP 12424580A JP S6339108 B2 JPS6339108 B2 JP S6339108B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- type
- source
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55124245A JPS5748257A (en) | 1980-09-08 | 1980-09-08 | Semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55124245A JPS5748257A (en) | 1980-09-08 | 1980-09-08 | Semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5748257A JPS5748257A (en) | 1982-03-19 |
JPS6339108B2 true JPS6339108B2 (enrdf_load_stackoverflow) | 1988-08-03 |
Family
ID=14880549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55124245A Granted JPS5748257A (en) | 1980-09-08 | 1980-09-08 | Semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5748257A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01149416U (enrdf_load_stackoverflow) * | 1988-04-04 | 1989-10-17 |
-
1980
- 1980-09-08 JP JP55124245A patent/JPS5748257A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01149416U (enrdf_load_stackoverflow) * | 1988-04-04 | 1989-10-17 |
Also Published As
Publication number | Publication date |
---|---|
JPS5748257A (en) | 1982-03-19 |
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