JPS5748257A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- JPS5748257A JPS5748257A JP55124245A JP12424580A JPS5748257A JP S5748257 A JPS5748257 A JP S5748257A JP 55124245 A JP55124245 A JP 55124245A JP 12424580 A JP12424580 A JP 12424580A JP S5748257 A JPS5748257 A JP S5748257A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- hall current
- source
- coms29
- latch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55124245A JPS5748257A (en) | 1980-09-08 | 1980-09-08 | Semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55124245A JPS5748257A (en) | 1980-09-08 | 1980-09-08 | Semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5748257A true JPS5748257A (en) | 1982-03-19 |
| JPS6339108B2 JPS6339108B2 (enrdf_load_stackoverflow) | 1988-08-03 |
Family
ID=14880549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55124245A Granted JPS5748257A (en) | 1980-09-08 | 1980-09-08 | Semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5748257A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01149416U (enrdf_load_stackoverflow) * | 1988-04-04 | 1989-10-17 |
-
1980
- 1980-09-08 JP JP55124245A patent/JPS5748257A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6339108B2 (enrdf_load_stackoverflow) | 1988-08-03 |
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