JPS6337629A - Jig for holding wafer - Google Patents

Abstract

PURPOSE:To make discharge uniform, and to execute a uniform treatment by constituting a jig for holding a wafer of a plurality of members consisting of quartz as an insulator. CONSTITUTION:Projecting sections organized of members 11, 12 composed of quartz, inserted and fitted from both sides of a through-hole 13a formed to a plasma electrode 13 and holding a wafer 14 by tapered large diametral sections 11b, 12b on both sides of the plasma electrode 13 are shaped. Consequently, projecting sections made up of conductors are not formed onto the plasma electrode 13, and a distance between the plasma electrodes 13 can be equalized. Accordingly, uniform plasma is shaped between these plasma electrodes 13, thus executing a uniform treatment.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a wafer holding shell disposed in a semiconductor manufacturing apparatus or the like that processes wafers while holding them in an upright position.

(Prior Art) In general, semiconductor manufacturing equipment that processes wafers while holding them upright includes a support plate that stands upright and supports the side surface of the wafer, and a wafer holding jig that protrudes from the support plate and holds the lower part of the wafer. A tool holds the wafer parallel to the surface of the support plate.

For example, in a plasma CVD apparatus, as shown in FIG. 5 and FIG. A wafer holding jig 3 is disposed that forms a groove for holding the outer periphery of the lower half of the wafer 2 to be placed and protrudes in a semicircular shape.

In such a plasma CVD apparatus, high-frequency power is applied between the plasma electrodes 1 arranged facing each other, so if a claw or the like is provided as a wafer holding jig, for example, the distance between the facing plasma electrodes 1 is shortened. Because concentrated discharge occurs between these nails and has a negative effect on film formation, the plasma electrode 1
In order to average the distance between the wafers, the wafer holding jig is constructed as described above.

(Problems to be Solved by the Invention) However, in the conventional wafer holding jig described above, the distance between the plasma electrodes is different between the upper and lower parts of the plasma electrode, which causes non-uniform discharge and film formation. There was a problem in that it was not possible to uniformly carry out such processing.

The present invention has been made in response to the conventional situation, and aims to provide a wafer holding jig that can uniformize discharge between plasma electrodes and uniformly perform processes such as film formation. It is something to do.

[Structure of the Invention] (Means for Solving the Problems) In other words, the present invention has a method that protrudes from an upright support plate and holds the lower part of a wafer that is arranged parallel to the surface of the support plate. The wafer holding jig has a fixing mechanism that is fitted into a bean holder and can be integrated, and is made up of multiple members made of quartz that form a large diameter part at both ends and a small diameter part in the middle when in the bottom stand state. , characterized in that the protrusion is fitted from both sides of a through hole provided in the support plate and has approximately the same diameter as the small diameter portion to form a protrusion that holds the wafer on at least one of the support plates. do.

(Function) In the wafer holding jig of the present invention, since the wafer holding jig is constituted by a plurality of members made of quartz, which is an insulator, no protrusion made of a conductor is formed on the support plate, and discharge is prevented. It can be made uniform and uniform processing can be performed.

(Example) An example of the wafer holding jig of the present invention will be described below with reference to the drawings.

FIG. 1 shows a wafer holding jig according to an embodiment of the present invention, which is made of quartz and has a diameter of 3 mm and a length of 7 mm, for example.
A large diameter part 11b is formed in a tapered shape at one end of the small diameter part 11a and has a maximum diameter of, for example, 13 mm, and a large diameter part 11b is arranged at the other end of the small diameter part 11a and has a width of, for example, 2 m.
m, a member 11 consisting of a protrusion 11c with a length of 1.5 mm and a thickness of 1 mm, and a hollow cylindrical small diameter part configured to match the shape of this member 11 and having, for example, an inner diameter of 3.1 mm and a length of 4 mm. 12a, a large diameter portion 1 that is tapered at one end of the small diameter portion 12a and has a maximum diameter of, for example, 13 mm.
2b.

d3, the hollow part formed in the small diameter part 12a of the member 12 extends into the large diameter part 12b, and its total length is, for example, 7.
It is said to be about mm. The inner side wall portion has a width of, for example, 2.1111mm according to the shape of the protrusion 11G.
A groove 12c with a height of 1.1 mm and a height of 1.1 mm is formed, and this groove 12G is formed in a semicircular shape along the side wall at the abutting part, and constitutes a fixing mechanism that engages with the protrusion 11G. do.

As shown in FIG. 2, the plasma electrode 13 is used for CVD processing using, for example, a plasma CVD apparatus, and is placed on a plasma electrode 13@ on which a wafer is placed in an upright state parallel to the surface thereof. Such a plasma electrode 13 is made of, for example, aluminum whose surface has been subjected to alumite treatment, and has a diameter of 175 m.
m, is formed into a disk shape with a thickness of 3 mm, and a through hole 1 with a diameter of about 5.1 mm is arranged in this plasma electrode 13.
Part 111 and member 12 are placed on both sides of 3a a)
, align the protrusion 11G of the member 11 with the groove 12c of the member 12 and insert it into the small diameter part 12a b), the member 11 and the member 1
2 relative to each other by a half turn to move the position of the protrusion 11c within the semicircular groove 12c formed in the abutting part of the hollow part, thereby fixing the member 11 and the member 12 (C).

As shown in FIGS. 3 and 4, the wafer holding jig having the above configuration is used for holding a wafer 14 of, for example, a diameter of 15 cm, which is placed concentrically on the surface of the plasma electrode 13, below the surface of the plasma electrode 13. They are arranged at intervals along the periphery and support the lower part of the wafer 14.

That is, the wafer holding jig of this embodiment is composed of members 11 and 12 made of quartz, and is inserted and fitted from both sides of a through hole 13a provided in the plasma electrode 13, so that a tapered shape is formed on both sides of the plasma electrode 13. Large diameter portions 11b, 12b of
A protrusion for holding the wafer 111 is formed by the following steps. Therefore, no protrusion made of a conductor is formed on the plasma electrodes 13, and the distance between the plasma electrodes 13 can be made uniform, so that uniform plasma is formed between these plasma electrodes 13, and uniform processing can be performed. can be done.

In this embodiment, the case where the support plate is the plasma electrode 13 has been described, but the present invention is not limited to this embodiment, and the support plate may be of any type, such as a metal electrode plate or a susceptor. , and high temperature (approximately 1000℃)
It can be used in any semiconductor manufacturing equipment other than plasma CVD equipment as it is chemically stable and contains almost no alkali metals, single metals, etc. that cause contaminants and yield reductions. can do. Further, it goes without saying that any fixing mechanism may be used as long as it can be connected and fixed.

[Effects of the Invention] As described above, with the wafer holding jig of the present invention, discharge within the plasma electrode can be made uniform, and processes such as film formation can be performed uniformly.

[Brief explanation of the drawing]

FIG. 1 is a vertical cross-sectional view showing a wafer holding jig according to an embodiment of the present invention, FIG. 2 is an explanatory diagram showing a fitted state of the wafer holding jig shown in FIG. 1, and FIG. FIG. 4 is a side view of FIG. 3, FIG. 5 is a front view of a conventional wafer holding jig, and FIG. FIG. 6 is a side view of FIG. 5; 11... Member made of quartz, 11a...
・Small diameter part, 11b...Large diameter part, 11G...
...Protrusion, 12...Member made of quartz, 12a...Small diameter part, 12b...Large diameter part, 12...Groove, 13...Plasma electrode, 13a...Through hole. Applicant Tokyo Electron Co., Ltd. Agent Patent Attorney Sasa Suyama - Industry 2 Figure 3 Figure 4 745 Figure 6

Claims (1)

[Claims] (1) In a wafer holding jig that protrudes from an upright support plate and holds the lower part of a wafer arranged parallel to the surface of the support plate, a fixing mechanism that can be fitted into each other and integrated is provided. It is made up of a plurality of members made of quartz that form a large diameter part at both ends and a small diameter part in the middle part in the fitted state,
The protrusion is configured to be fitted from both sides of a through hole provided in the support plate and having approximately the same diameter as the small diameter portion to form a protrusion that holds the wafer on at least one side of the support plate. Wafer holding jig.