JPH02194194A - Plating device - Google Patents
Plating deviceInfo
- Publication number
- JPH02194194A JPH02194194A JP1298589A JP1298589A JPH02194194A JP H02194194 A JPH02194194 A JP H02194194A JP 1298589 A JP1298589 A JP 1298589A JP 1298589 A JP1298589 A JP 1298589A JP H02194194 A JPH02194194 A JP H02194194A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- electrode
- diameter
- plating
- force
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 23
- 230000002093 peripheral effect Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 30
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は半導体チップに形成されたバンプ等にメッキを
行うメッキ装置に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a plating apparatus for plating bumps and the like formed on semiconductor chips.
〈従来の技術〉
ウェハーの半導体チップに形成されたバンプにメッキを
行う場合の例をとり従来のメッキ装置を第２図を参照し
て説明する。バンプにメッキを施そうとするウェハー１
から所定の距離をおいてこのウェハー１に対向するよう
に、ウェハー１とほぼ同一径の対向電極２を設け、メッ
キ用電源４の一端を対向電極２に、他端をウェハーｌに
接続することによって、対向電極２とウェハー１間に、
第２図に示すように、電気力線５を発生させてウェハー
１のバンプメッキを行っている。<Prior Art> A conventional plating apparatus will be described with reference to FIG. 2, taking as an example a case where bumps formed on a semiconductor chip of a wafer are plated. Wafer 1 on which bumps are to be plated
A counter electrode 2 having approximately the same diameter as the wafer 1 is provided so as to face the wafer 1 at a predetermined distance from the wafer 1, and one end of a plating power source 4 is connected to the counter electrode 2, and the other end is connected to the wafer l. Therefore, between the counter electrode 2 and the wafer 1,
As shown in FIG. 2, bump plating of the wafer 1 is performed by generating electric lines of force 5.
〈発明が解決しようとする課題〉
しかしながら、このようなメッキ装置には以下に述べる
欠点がある。即ち、第２図に示すように、ウェハー１の
周縁部分１ａより内部に発生する電気力線５ａは乱れが
無く一様であるが、周縁部分１ａに発生する電気力線５
ｂは曲がって乱れが生じている。<Problems to be Solved by the Invention> However, such a plating apparatus has the following drawbacks. That is, as shown in FIG. 2, the lines of electric force 5a generated inside the peripheral edge part 1a of the wafer 1 are uniform without any disturbance, but the lines of electric force 5a generated in the peripheral edge part 1a are uniform.
b is bent and disordered.
従って、ウェハー１の中央部分の電界密度と両端部分の
電界密度とは異なっているので、ウェハー１のメッキの
形成状況にばらつきが生じる。Therefore, since the electric field density at the central portion of the wafer 1 is different from the electric field density at both end portions, variations occur in the formation of plating on the wafer 1.
本発明は上記事情に鑑みて創案されたものであって、ウ
ェハーのメッキの形成状況にばらつきが生じることがな
い半導体メッキ装置を提供することを目的としている。The present invention was devised in view of the above circumstances, and an object of the present invention is to provide a semiconductor plating apparatus that does not cause variations in the plating conditions of wafers.
〈課題を解決するための手段〉
以上の課題を解決するために本発明のメッキ装置は、ウ
ェハーの周辺にこのウェハーに接触して設けたほぼ環状
の電極と、この電極に対向しこの電極の径にほぼ等しい
径を有する対向電極とを有している。<Means for Solving the Problems> In order to solve the above problems, the plating apparatus of the present invention includes a substantially annular electrode provided around the wafer in contact with the wafer, and a substantially annular electrode provided opposite to the wafer. and a counter electrode having a diameter approximately equal to the diameter.
〈作用〉
対向電極からウェハーに至る電気力線は乱れが無く一様
であり、ウェハーにはむらの無いメッキが形成される。<Operation> The electric lines of force from the counter electrode to the wafer are uniform without any disturbance, and uniform plating is formed on the wafer.
〈実施例〉
以下、図面を参照して本発明の一実施例を説明する。第
１図は本実施例の断面説明図である。<Example> Hereinafter, an example of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional explanatory diagram of this embodiment.
１０はバンプメッキを施そうとするウェハーである。ウ
ェハー１０の周辺には、ウェハー１０に接触し且つウェ
ハー１０を取り囲むようにほぼ環状で断面がほぼ長方形
状の電極３０が取り付けられている。10 is a wafer to which bump plating is to be applied. An electrode 30 having a substantially annular shape and a substantially rectangular cross section is attached to the periphery of the wafer 10 so as to be in contact with and surround the wafer 10 .
そして、電極３０の内側面には突出部３１が形成されて
おり、この突出部３１でウェハーｌの周縁部分１ａを支
持している。はぼ板状の対向電極２０が、電極３０と所
定の間隔を保ち且つ電極３０に対向するように配置され
ている。対向電極２０の径は電極３０の径（外径）とほ
ぼ等しい径に選定されている。そして、電極３０の径と
対向電極２０の径はともに、これら両電極間に電圧を印
加したときにウェハー１０に至る電気力線が一様になる
ような適宜の大きさに選定されている。４０はメッキ用
電源であって、その一端は対向電極２０に、他端は電極
３０に接続されている。A protrusion 31 is formed on the inner surface of the electrode 30, and this protrusion 31 supports the peripheral edge portion 1a of the wafer l. A plate-shaped counter electrode 20 is arranged so as to maintain a predetermined distance from the electrode 30 and to face the electrode 30. The diameter of the counter electrode 20 is selected to be approximately equal to the diameter (outer diameter) of the electrode 30. Both the diameter of the electrode 30 and the diameter of the counter electrode 20 are selected to be appropriate sizes so that the lines of electric force reaching the wafer 10 are uniform when a voltage is applied between these two electrodes. 40 is a plating power source, one end of which is connected to the counter electrode 20, and the other end connected to the electrode 30.
メッキ用電源４０によって電極３０およびウェハーｌと
対向電極２０との間に電圧を印加すると電気力線５０が
発生する。そして、電極３０の外周縁部分３０ａに発生
する電気力線５０ｂは第１図に示すように曲がって乱れ
が生じていても、ウェハー１０に至る電気力線５０ａは
乱れが無いので、ウェハー１０には一様でむらの無いバ
ンプメッキが形成される。従って高精度なバンプ形成が
可能になる。When a voltage is applied between the electrode 30 and the wafer l and the counter electrode 20 by the plating power source 40, electric lines of force 50 are generated. Even if the lines of electric force 50b generated at the outer peripheral edge portion 30a of the electrode 30 are bent and disturbed as shown in FIG. 1, the lines of electric force 50a leading to the wafer 10 are not disturbed. A uniform and even bump plating is formed. Therefore, highly accurate bump formation is possible.
〈発明の効果〉
以上説明したように本発明のメッキ装置は、ウェハーの
周辺にこのウェハーに接触して設けたほぼ環状の電極と
、この電極に対向しこの電極の径にほぼ等しい径を有す
る対向電極とを有している。<Effects of the Invention> As explained above, the plating apparatus of the present invention includes a substantially annular electrode provided around the wafer in contact with the wafer, and a substantially annular electrode facing the wafer and having a diameter substantially equal to the diameter of the electrode. It has a counter electrode.
従って、ウェハーに至る電気力線は乱れが無く一様であ
るので、ウェハーのメッキの形成状況にばらつきが生じ
ることがなく、高精度のバンプメッキ等を行うことがで
きる。Therefore, the lines of electric force that reach the wafer are uniform without any disturbance, so there is no variation in the plating conditions on the wafer, and highly accurate bump plating can be performed.
第１図は本実施例の断面説明図、第２図は従来のメッキ
装置の断面説明図である。
１０・・・ウェハー、２０・・・対向電極、３０・・・
電極。
特許出願人 シャープ株式会社FIG. 1 is an explanatory cross-sectional view of this embodiment, and FIG. 2 is an explanatory cross-sectional view of a conventional plating apparatus. 10... Wafer, 20... Counter electrode, 30...
electrode. Patent applicant Sharp Corporation
Claims (1)
ほぼ環状の電極と、この電極に対向しこの電極の径にほ
ぼ等しい径を有する対向電極とを有することを特徴とす
るメッキ装置。(1) A plating apparatus characterized by having a substantially annular electrode provided around a wafer in contact with the wafer, and a counter electrode facing the electrode and having a diameter substantially equal to the diameter of the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1298589A JPH02194194A (en) | 1989-01-20 | 1989-01-20 | Plating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1298589A JPH02194194A (en) | 1989-01-20 | 1989-01-20 | Plating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02194194A true JPH02194194A (en) | 1990-07-31 |
Family
ID=11820499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1298589A Pending JPH02194194A (en) | 1989-01-20 | 1989-01-20 | Plating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02194194A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1164209A2 (en) * | 2000-05-24 | 2001-12-19 | Yamamoto-Ms Co, Ltd. | Cathode cartridge of testing device for electroplating and testing device for electroplating |
| EP1195454A2 (en) * | 2000-10-06 | 2002-04-10 | Yamamoto-Ms Co, Ltd. | Cathode cartridge and anode cartridge of testing device for electroplating |
-
1989
- 1989-01-20 JP JP1298589A patent/JPH02194194A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1164209A2 (en) * | 2000-05-24 | 2001-12-19 | Yamamoto-Ms Co, Ltd. | Cathode cartridge of testing device for electroplating and testing device for electroplating |
| EP1164209A3 (en) * | 2000-05-24 | 2003-02-12 | Yamamoto-Ms Co, Ltd. | Cathode cartridge of testing device for electroplating and testing device for electroplating |
| US6811661B2 (en) * | 2000-05-24 | 2004-11-02 | Yamamoto-Ms Co., Ltd. | Cathode cartridge of testing device for electroplating and testing device for electroplating |
| EP1195454A2 (en) * | 2000-10-06 | 2002-04-10 | Yamamoto-Ms Co, Ltd. | Cathode cartridge and anode cartridge of testing device for electroplating |
| EP1195454A3 (en) * | 2000-10-06 | 2003-02-12 | Yamamoto-Ms Co, Ltd. | Cathode cartridge and anode cartridge of testing device for electroplating |
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