JPS6337614A - Plasma electrode - Google Patents

Abstract

PURPOSE:To change spaces between electrode plates, the number of the electrode plates, etc. arbitrarily by arranging connecting mechanisms capable of moving and fixing the electrode plates onto lead electrodes to connecting sections among the electrode platets and the lead electrodes. CONSTITUTION:One of lead electrodes 1a, 1b are inserted to sliders 3 fastened to electrode plates 2, and fixed by screws 3a for fixation, thus electrically connecting the lead electrodes 1a, 1b and the electrode plates 2. Notch sections 4 in the electrode sections 2 are engaged with other lead electrodes 1b, 1a through cylindrical insulator sections 5 consisting of quartz, etc., and the electrode plates 2 are fastened between the lead electrodes 1a, 1b on a wafer boat 7. Consequently, the spaces of the electrode plates 2 Can be altered arbitrarily in such a manner that the screws 3a for fixation on the sliders are loosened by the conditions of treatment, etc. and the sliders 3 are moved on the lead electrodes 1a, 1b, and the electrodes 2 can also be mounted or dismantled. Accordingly, the number of the electrode plates 2 can also be Varied optionally by the number of semiconductor wafers 6 treated, etc.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention (Industrial Application Field) The present invention relates to a plasma electrode used in a semiconductor manufacturing apparatus such as a plasma CVD apparatus.

(Prior Art) Generally, a plasma electrode used in semiconductor manufacturing equipment such as plasma CVD equipment has a large number of disk-shaped electrode plates arranged in parallel, and two rod-shaped electrodes arranged in parallel along the rows of these electrode plates. The electrode plate is supported by lead electrodes.

These electrode plates are fixed to one lead electrode on alternate sides by welding, and are configured to be locked to the other lead electrode via an insulator.

For example, in a plasma CVD apparatus, a semiconductor wafer is placed between these electrode plates, inserted into a processing chamber, and high-frequency power is supplied between the electrode plates from the lead electrode in a predetermined reaction gas atmosphere to create a gap between the electrode plates. generate plasma and CV
Do D.

(Problems to be Solved by the Invention) However, in the conventional plasma electrode described above, the spacing between the electrode plates can be changed due to changes in processing conditions, or the number of electrode plates can be increased or decreased depending on the number of semiconductor wafers to be processed. In order to meet these conditions, a large number of plasma electrodes are required, leading to increased costs and limitations on processing conditions.

The present invention has been made in response to such conventional circumstances, and
The present invention aims to provide a plasma electrode in which the spacing between electrode plates, the number of electrode plates, etc. can be arbitrarily changed, and processing can be performed under a wide range of conditions with one plasma electrode.

[Structure of the Invention] (Means for Solving the Problems) That is, the present invention comprises a plurality of electrode plates coaxially arranged in parallel with each other, and at least two electrode plates arranged in parallel along the row of these electrode plates. A plasma electrode comprising a rod-shaped lead electrode that supports the electrode plate, and in which the opposing electrode plates are electrically connected to different lead electrodes, at a connection portion between the electrode plate and the lead electrode, The present invention is characterized in that a connection mechanism is provided that allows the electrode plate spacing to be moved and fixed along the lead electrode.

(Function) In the plasma electrode of the present invention, a connection mechanism that can move and fix the electrode plate onto the lead electrode is arranged at the connection part between the electrode plate and the lead electrode, and the spacing between the electrode plates and the electrode plate are The number of sheets etc. can be changed arbitrarily.

(Example) The details of the present invention will be described below with reference to the drawings.

Figures 1 to 3 show a plasma electrode according to an embodiment of the present invention.The plasma electrode of this embodiment consists of two electrodes made of, for example, alumite-treated aluminum, each having a diameter of 7 mm, for example, and a length of 7 mm. 1m80cm rod-shaped lead electrode 1
a, 1b are arranged in parallel, and these lead electrodes 1a,
Between the electrodes 1811b, a large number of electrode plates 2 made of, for example, alumite-treated aluminum and having a plate shape, for example, a disk shape with a diameter of about 175 mm, are arranged in parallel so as to intersect with, for example perpendicular to, the electrodes 1811b. . Note that the distance between the electrode plates 2 is 1 cm or more, for example, 2 cm.

The lead electrodes 1a, 1b on the circumferential side edges of these electrode plates 2
As shown in FIG. 2, the lead electrode 1 is made of alumite-treated aluminum or the like and
A cylindrical slider 3 having an inner diameter slightly larger than those of a and 1b, for example, about 7.1 mm, and having a fixing screw 3a disposed through the side wall is welded to the other lead electrode 1a, An arcuate notch 4 having a diameter of 16 mm, for example, is formed in accordance with the outer diameter of 1b. In addition, a tweezers insertion groove 2a having a depth of 1 mm and a width of 30 mm, for example, is arranged on the upper side edge of the electrode plate 2, and two quartz jigs 2b for supporting semiconductor wafers are arranged at intervals below the plate surface. There is. This jig 2b has a structure for hooking a disk-shaped semiconductor wafer 6, and has a structure for inserting and mounting the semiconductor wafer 6 from above along the electrode plate 2 surface.

Then, as shown in FIG. 3, one of the lead electrodes 1a, 1b is inserted into the slider 3 fixed to the electrode plate 2, and fixed with the fixing screw 3a to connect the lead electrodes 1i1a, 1b and the electrode plate 2. After making the electrical connection, the notch 4 of the electrode plate 2
is locked to the other lead electrodes 1b, 1a via a cylindrical insulator section 5 made of quartz or the like, and the electrode plate 2 is fixed on the wafer boat 7 between the lead electrodes 1a, 1b. Note that the electrical connection to the lead electrodes 1a, 1b of the electrode plate 2 described above is made by connecting the lead electrodes 1a, 1b on different sides every other sheet.
are arranged so that they are connected to. This is the opposing electrode plate 2
This is to form an electric field for generating plasma between the two.

That is, a semiconductor wafer 6 is placed on a jig 2b provided on the electrode plate 2, and the electrode plate 2 supporting the semiconductor wafer 6 is connected to a wafer boat 7 made of quartz, a lead electrode 1a,
It has a structure in which it is fixedly arranged with 1b. At this time, V-shaped grooves may be provided in the wafer boat 7 at every interval between the electrode plates 2, if necessary.

The wafer boat 7 in such a state is exposed to, for example, plasma C.
The lead electrode 1a is inserted into a processing chamber of a VD device, etc.
, '1b are electrically connected to the terminal 7a of the door flange 7 of the plasma CVD apparatus. Then, a predetermined reactive gas such as S+ Ha and N is added to this plasma CVD frosting.
A reactive gas such as H3 is caused to flow, and in this reactive gas atmosphere, the electrode plate 2 is connected from the terminal 7a through the lead electrodes 1a and 1b.
In between, high frequency power, for example 13.75) fH2, is applied to generate plasma between each electrode plate 2, and processing such as CVD is performed.

In the plasma electrode of this embodiment with the above configuration, the spacing between the electrode plates 2 is determined by the fixing screws 3 on the slider 3 depending on the processing conditions, etc.
It can be changed arbitrarily by loosening a and sliding the slider 3 over the lead electrodes 1a and 1b.
Since it is also possible to attach and detach the electrode plates 2, the number of electrode plates 2 can be arbitrarily changed depending on the number of semiconductor wafers 6 to be processed. Therefore, processing can be performed under a wide range of processing conditions using one plasma electrode.

[Effects of the Invention] As described above, in the plasma electrode of the present invention, the spacing between electrode plates, the number of electrode plates, etc. can be changed arbitrarily, and processing can be performed under a wide range of processing conditions with one plasma electrode. can.

[Brief explanation of drawings]

1 is a perspective view showing a plasma electrode according to an embodiment of the present invention, FIG. 2 is a perspective view showing an enlarged main part of FIG. 1, and FIG. 3 is a top view of FIG. 1. 1a, 1b... Lead electrode, 2... Electrode plate,
3...Slider, 3a...Fixing screw, 4...Notch, 5...Insulator part, 6
・・・・・・Semiconductor wafer. Applicant - Tokyo Electron Ltd. Representative Patent Attorney Sasa Suyama - Figure 1 Figure 2 Figure 3

Claims (1)

[Claims] (1) comprising a plurality of electrode plates arranged coaxially in parallel with each other, and at least two rod-shaped lead electrodes arranged in parallel along these electrode plate rows and supporting the electrode plates;
In a plasma electrode in which the opposing electrode plates are electrically connected to different lead electrodes, moving the electrode plate interval along the lead electrode at a connection portion between the electrode plate and the lead electrode; A plasma electrode characterized by having a connection mechanism arranged to enable fixation.