JP3336989B2 - Dry etching equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of disposing a lower electrode plate and an upper electrode plate inside a reaction chamber, disposing a substrate between the lower electrode plate and the upper electrode plate, and etching the reaction chamber. The present invention relates to a dry etching apparatus for supplying a gas to etch a substrate.

[0002]

2. Description of the Related Art A dry etching apparatus of this kind is disclosed in Japanese Patent Application Laid-Open No. 4-330723. The dry etching apparatus includes a divided ground electrode that supports and grounds the outer periphery of a semiconductor substrate, a first counter electrode that is connected to a high-frequency power supply and faces the surface of the semiconductor substrate, and a semiconductor substrate that is connected to the high-frequency power supply and And a second opposing electrode facing the back surface of the semiconductor substrate is provided in the reaction chamber, and gas is passed through the reaction chamber to dry-etch the front and back surfaces of the semiconductor substrate.

[0003]

However, since the conventional dry etching apparatus has the divided type ground electrode, the first counter electrode, and the second counter electrode, the voltage control is complicated and the structure is low. There is a problem that is complicated.

An object of the present invention is to provide a dry etching apparatus capable of simultaneously performing dry etching on the front and back surfaces of a substrate, easily controlling a voltage, and having a simple structure.

[0005]

[0006]

[0007]

Means for Solving the Problems] To solve the above problems
According to a first aspect of the present invention, in a dry etching apparatus in which a lower electrode plate and an upper electrode plate are disposed inside a reaction chamber and an etching gas is supplied to the reaction chamber, a predetermined interval is provided above the lower electrode plate. Fixed on the side wall of the reaction chamber
Substrate composed of an electrically insulating member having micro holes for gas passage
And a substrate holding member for holding the side of the substrate .

According to a second aspect of the present invention, in the first aspect of the present invention, the distance between the lower electrode plate and the substrate is always equal to or greater than the distance of the plasma sheath from the start of etching to the end of etching, and is kept constant. It is characterized by the following.

According to a third aspect of the present invention, there is provided a dry etching apparatus in which a lower electrode plate and an upper electrode plate are disposed inside a reaction chamber and an etching gas is supplied to the reaction chamber. Having a grid-like support member made of an electrically insulating member, and a column portion on a vertical side of the grid-like support member.
The height is determined by etching the substrate placed on the grid-like support member.
Plasma seed from the start of etching to the end of etching.
And maintain a certain distance above the distance of the grid.
The height of the column is set lower than the column on the vertical side.
Characterized in that that.

[0010]

[0011]

Next, embodiments of the present invention will be described in detail with reference to the drawings. As shown in FIG. 1, a dry etching apparatus as an embodiment of a reference example of the present invention includes:
The lower electrode plate 2 and the upper electrode plate 3 are disposed inside the reaction chamber 1, and the etching gas 5 is supplied to the reaction chamber 1 via the gas supply pipe 4.
A plurality of supporting needle members 6 fixed to the upper part of the lower electrode plate 2 and made of an electrically insulating member, and a substrate 7 placed on the supporting needle members 6. Have. The distance between the lower electrode plate 2 and the substrate 7 is set to be longer than the distance of the plasma sheath. A high frequency power supply 8 is connected to the lower electrode plate 2 via a capacitor 9. The upper electrode plate 3 is grounded (earthed).

In this etching apparatus, when etching the substrate 7, the surface of the substrate 7 is etched, and at the same time, from the slight gap corresponding to the height of the supporting needle member 6, the back surface of the substrate 7 is When the radical species of the etching gas 5 introduced from the side flow around, the etching of the back surface of the substrate 7 can be performed simultaneously with the etching of the front surface of the substrate 7.

In this etching apparatus, the substrate 7 is located on the lower electrode plate 2 side, and a voltage drop occurs on the lower electrode plate 2 side due to the plasma sheath. At this time, in order for plasma to be generated on both surfaces of the substrate 7 and for the radical species to reach the back surface of the substrate 7, the distance (interval) between the substrate 7 and the lower electrode plate 2 needs to be at least the distance of the plasma sheath. There is. The distance of the plasma sheath depends on the electrode distance and the electrolytic strength, but is about several mm. It is desirable that the distance between the substrate 7 and the lower electrode plate 2 is longer than the distance of the plasma sheath.

The supporting needle member 6 is made of an insulating material such as ceramic. This is because, when the support needle member 6 is a conductive member, since the substrate 7 is an insulator, the portion becomes an electrode and charges are accumulated on the back surface of the substrate 7, so that the substrate 7 is electrically conductive.
Is not smoothly performed on the back surface of the substrate.

Next, a first embodiment of the present invention will be described in detail with reference to the drawings. In the first embodiment of the present invention, the same components as those in the embodiment of the reference example of the present invention are denoted by the same reference numerals. As shown in FIG. 2, the dry etching apparatus according to the first embodiment of the present invention has a lower electrode plate 2 and an upper electrode plate 3 arranged inside a reaction chamber 1, and a gas supply pipe 4 provided in the reaction chamber 1. Etching gas 5 through
In a dry etching apparatus, a substrate holding member 10 fixed to the side wall of the reaction chamber 1 at a predetermined interval above the lower electrode plate 2 and having a large number of gas passage micropores 10a and made of an electrically insulating member. And the substrate holding member 10
And a substrate 7 held in a state where the side portions are sandwiched therebetween.

The etching gas 5 supplied to the reaction chamber 1 via the gas supply pipe 4 can be diverted by the radical species of the etching gas 5 via the fine through holes 10 a of the substrate holding member 10. Also in this etching apparatus,
As in the case of the embodiment of the reference example, since the substrate holding member 10 sandwiching the substrate 7 is an insulating member, no charge is accumulated on the substrate 7, and thus the etching gas 5 is generated by decomposition by plasma discharge. The radical species can go around the back surface of the substrate 7. At this time, the distance between the substrate 7 and the lower electrode plate 2 needs to be at least the distance of the plasma sheath.

Next, it will be described in detail with reference to the second embodiment of the present invention with reference to the drawings. In the second embodiment of the present invention, the same components as those of the embodiment of the reference example of the present invention are denoted by the same reference numerals. Dry etching apparatus according to a second embodiment of the present invention, in the dry etching apparatus as an embodiment of the reference example <br/> of the present invention in FIG. 1, in place of the support needle member 6 as shown in FIG. 3 This is formed by using a lattice-shaped support member 11. That is, the second aspect of the present invention
The dry etching apparatus according to the embodiment includes a reaction chamber 1
The lower electrode plate 2 and the upper electrode plate 3 are arranged inside the chamber, and an etching gas 5 is supplied to the reaction chamber 1 through a gas supply pipe 4. Lattice support member 11 made of an insulating member
And a substrate 7 placed on the lattice-shaped support member 11.

In the grid-like support member 11, the height of the column portion of the vertical side portion 11a of the grid is equal to or greater than the plasma sheath distance, and the height of the column portion of the horizontal side portion 11b of the grid is the vertical side portion 11a.
It is set lower than the height of the pillar part. The radical species of the etching gas 5 supplied to the reaction chamber 1 via the gas supply pipe 4 can enter from the gap of the lattice-shaped support member 11, and the back surface of the substrate 7 can be etched.

When dry etching of a CVD film formed on both surfaces of a glass substrate is performed by using this dry etching apparatus, plasma etching using a patterning resist as a mask on the surface of the glass substrate and plasma etching on the back surface of the glass substrate are performed. Since the chemical transport etching by radicals in the step is performed at the same time, there is no need to provide an etching step for the back surface of the glass substrate other than the etching step for the front surface of the glass substrate, and the manufacturing process can be shortened. In the case of using this dry etching apparatus, plasma processing using ions and radicals is performed on the surface of the substrate, so that etching processability using a patterning resist is obtained, while chemical transport by radicals is performed on the back surface of the substrate. Since only etching is performed, etching workability cannot be obtained, but the entire surface can be etched without using a resist.

[0020]

According to the present invention, the front and back surfaces of the substrate can be dry-etched simultaneously.

According to the present invention, since only two electrode plates are provided, voltage control is easy and the structure is simple.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing dry etching as a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view showing dry etching as a second embodiment of the present invention.

FIG. 3 is a perspective view showing a main part of dry etching as a third embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Reaction chamber 2 Lower electrode plate 3 Upper electrode plate 4 Gas supply pipe 5 Etching gas 6 Support needle member 7 Substrate 8 High frequency power supply 9 Capacitor 10 Substrate holding member 10a Gas passing microhole 11 Grid support member

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/3065 C23F 4/00 H05H 1/46

Claims (3)

(57) [Claims] 1. A dry etching apparatus comprising: a lower electrode plate and an upper electrode plate disposed inside a reaction chamber; and an etching gas supplied to the reaction chamber. It is fixed to the side wall of the reaction chamber of the substrate Do Ri electrically insulative member having a plurality of gas passage micropores
A dry etching apparatus comprising: a substrate holding member for holding a side portion therebetween . 2. The dry etching apparatus according to claim 1 , wherein a distance between the lower electrode plate and the substrate is always longer than a distance of a plasma sheath from the start of etching to the end of etching, and is kept constant. A dry etching apparatus characterized by the following. 3. A dry etching apparatus in which a lower electrode plate and an upper electrode plate are arranged inside a reaction chamber and an etching gas is supplied to the reaction chamber. have a grid-like support member comprising
The height of the column portion on the vertical side of the lattice-shaped support member is
Start etching the substrate placed on the grid support
From the time of the plasma sheath to the end of the etching.
At a fixed distance above the height of the column on the side of the grid.
The dry etching apparatus is characterized in that the height is set lower than the vertical side column portion .