CN108203817B - PECVD reaction chamber and support needle for same - Google Patents
PECVD reaction chamber and support needle for same Download PDFInfo
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- CN108203817B CN108203817B CN201810085370.8A CN201810085370A CN108203817B CN 108203817 B CN108203817 B CN 108203817B CN 201810085370 A CN201810085370 A CN 201810085370A CN 108203817 B CN108203817 B CN 108203817B
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 31
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 30
- 239000004020 conductor Substances 0.000 claims abstract description 12
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- 229910052751 metal Inorganic materials 0.000 claims description 6
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- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 20
- 239000011521 glass Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 8
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
Abstract
The utility model provides a PECVD reaction chamber and be used for support needle in PECVD reaction chamber belongs to semiconductor technical field. This a support needle for PECVD reaction chamber includes: a needle core; the needle sleeve is coated outside the needle core; the gasket is arranged at the bottoms of the needle core and the needle sleeve; the parts of the needle core and the gasket, which correspond to the needle core and the needle sleeve, are made of conductive materials, and the needle sleeve is made of non-conductive materials. The supporting needle is made of a conductive material, and the needle core and the gasket are grounded, so that the whole supporting needle is grounded, the number of capacitors connected in series in the Pin region can be reduced, the plasma density of the Pin region is improved, and the capacitance difference of the non-Pin region in the Pin region is reduced.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, in particular to a PECVD reaction cavity and a supporting needle for the same.
Background
In the TFT-LCD (Thin Film Transistor Liquid Crystal Display, english) industry, a support Pin Lift Pin is widely used to support a glass substrate. However, due to the use of the supporting Pin, the plasma density difference between the Pin region and the non-Pin region is easily caused, and thus the difference exists between the thin film generated in the Pin region and the thin film generated in the non-Pin region.
In a PECVD (Plasma Enhanced Chemical Vapor Deposition) process, Plasma is locally formed by ionizing a reaction gas containing film constituent atoms by means of microwave or radio frequency, etc., and the Plasma is chemically very active and easily reacts to deposit a desired film on a substrate. In the Pin region, the Pin Cap (i.e. Cap) part of Pin is made of Al or graphite material, the supporting part of Pin is made of through-body ceramic, the lower electrode is grounded, and the Cap of Pin is not grounded, thus causing Pin and the lower electrode to form capacitance, and the capacitance of the non-Pin region is different, so that the plasma density of the two regions is different. Therefore, the film generated by the Pin region is different from the film generated by the normal non-Pin region, Mura is formed, the product quality and yield are affected, and the electrical characteristics are affected, so that the display effect is affected.
Therefore, there is still a need for improvement in the prior art solutions.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
An object of the present disclosure is to provide a PECVD reaction chamber and a support needle for the same, thereby overcoming, at least to some extent, the problem of Mura formation due to the difference between a film generated from a Pin region and a film generated from a normal non-Pin region due to the limitations and disadvantages of the related art.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows, or in part will be learned by practice of the disclosure.
According to an aspect of the present disclosure, there is provided a supporting needle for use in a reaction chamber, comprising:
a needle core;
the needle sleeve is coated outside the needle core; and
at least one layer of gasket is arranged at the bottoms of the needle core and the needle sleeve;
the parts of the needle core and the gasket, which correspond to the needle core and the needle sleeve, are made of conductive materials, and the needle sleeve is made of non-conductive materials.
In an exemplary embodiment of the present disclosure, further comprising:
the needle cap is positioned on the tops of the needle core and the needle sleeve, the needle cap is positioned in a first accommodating groove of the base, a second accommodating groove which penetrates through the first accommodating groove is formed in the base and is used for accommodating the needle core and the needle sleeve, and the area of the first accommodating groove is larger than that of the second accommodating groove;
wherein the needle cap is made of conductive material.
In an exemplary embodiment of the present disclosure, further comprising:
and the roller sleeve is coated outside the needle sleeve and is also positioned in the second accommodating groove, and the length of the roller sleeve is greater than or equal to the thickness of the base.
In an exemplary embodiment of the present disclosure, a portion of the roller sleeve located in the second accommodating groove further includes: a plurality of rollers for varying the height of the top surface of the needle cap relative to the upper surface of the base.
In an exemplary embodiment of the disclosure, the parts of the stylet, the needle cap and the gasket corresponding to the stylet and the needle sheath are made of metal.
In an exemplary embodiment of the disclosure, the portion of the stylet, the needle cap, and the gasket corresponding to the stylet and the needle sheath is made of aluminum.
In an exemplary embodiment of the disclosure, the material of the needle sleeve is ceramic.
In an exemplary embodiment of the present disclosure, the stylet is grounded.
According to a second aspect of the present disclosure, there is also provided a plasma enhanced chemical vapor deposition PECVD reaction chamber, comprising:
a cavity;
the base is used for bearing a sample and is provided with a first accommodating groove; and
the bottom of the support needle is fixed on the cavity through at least one layer of gasket, and the top of the support needle is positioned in the first accommodating groove.
In an exemplary embodiment of the present disclosure, the support pin is grounded.
According to the PECVD reaction chamber and the support needle for the PECVD reaction chamber, on one hand, the support needle is made of a conductive material in the needle core, and the needle core and the gasket are grounded, so that the whole support needle is grounded, the number of capacitors connected in series in the Pin region can be reduced, the plasma density of the Pin region is improved, and the capacitance difference of a non-Pin region in the Pin region is reduced; on the other hand, the uniformity of plasma distribution in the reaction cavity is improved, the membrane quality is improved, the Mura occurrence rate is reduced, and the product quality is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.
Fig. 1 shows a Pin structure diagram in a related embodiment of the present disclosure.
Fig. 2 is a schematic diagram illustrating series capacitance of the pedestal in the Pin region and the non-Pin region in a related embodiment of the disclosure.
Fig. 3 shows a schematic structural diagram of the support pin used in a PECVD reaction chamber in an embodiment of the present disclosure.
Fig. 4 illustrates an enlarged view of portion a in fig. 3 of an embodiment of the present disclosure.
Fig. 5 illustrates an enlarged view of portion B of fig. 3 in an embodiment of the present disclosure.
FIG. 6 is a schematic diagram illustrating the series capacitance of the pedestal in the Pin region and the non-Pin region according to an embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus their repetitive description will be omitted.
Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the subject matter of the present disclosure can be practiced without one or more of the specific details, or with other methods, components, devices, steps, and the like. In other instances, well-known structures, methods, devices, implementations, materials, or operations are not shown or described in detail to avoid obscuring aspects of the disclosure.
In this document, the directional terms "inner side" and "outer side" refer to the side facing the liquid crystal layer and the side facing away from the liquid crystal layer, respectively, for example, the inner side of the substrate refers to a layer of the substrate facing the liquid crystal layer. In addition, the directional terms "upper", "lower", "left" and "right" are defined with respect to the schematically placed orientations of the display device in the drawings. It will be appreciated that the above directional terms are relative concepts that are used for descriptive and clarity purposes relative to each other and that may vary accordingly depending on the orientation in which the display device is placed.
In a related embodiment of the present disclosure, the PECVD process includes connecting the upper electrode to a radio frequency power source, connecting the lower electrode to ground, and dissociating the reactant gases (SiH4 and NH3) into plasma under the action of the radio frequency power source, and then reacting the surface of the glass substrate deposited on the lower electrode. During the glass substrate transferring process, Pin is required as a support to exchange the glass substrate.
Fig. 1 shows a schematic view of a Pin structure in a related embodiment of the present disclosure, and as shown in fig. 1, a partial structure of a PECVD process reaction chamber is shown in addition to the Pin structure. Wherein the bottom of Pin4 is fixed on the chamber body 5 of the reaction chamber by a gasket 6, the top of Pin4 (i.e. Pin Cap) supports the glass substrate (not shown in the figure) by penetrating through the base 1, the roller cover 2 is covered outside the Pin4, and the chamber body 5 is connected with the base 1 by a connecting wire 3. Conventional pins are generally made of ceramic, Pin Cap is made of Al, and treated with Anodized, wherein Anodized is anodic plating, which means plating a protective oxide layer on the metal surface by electrolysis, i.e. the top of Pin Cap is made of alumina.
Fig. 2 is a schematic diagram illustrating series capacitance of the pedestal in the Pin region and the non-Pin region in the related embodiment of the disclosure, wherein the Pin region (i.e., at S1) is a partial region of the pedestal where Pin can protrude, i.e., a region capable of supporting a glass substrate on the pedestal, and the non-Pin region (i.e., at S2) is a region of the pedestal other than the Pin region. As shown in FIG. 2, the non-Pin region can be seen as three capacitors connected in series by Glass substrate 7, Anodized oxide 9, and Susceptor base 1 (ground); the Pin region can be seen as five capacitors in series, Glass substrate 7, Anodized oxide 8 (i.e., Pin Coating), top PinCap41 of Pin4, Anodized oxide 9 (i.e., Suscepter Coating), and Suscepter base 1 (ground). If the more capacitors are connected in series, the lower the plasma density in this region, as can be seen from fig. 2, the non-Pin region includes three capacitors connected in series, and the Pin region includes five capacitors connected in series, so that the plasma density in the non-Pin region is greater than that in the Pin region. The difference of plasma density in the film forming process can cause the difference of film quality, so that the difference of film quality of a Pin area and film quality of a non-Pin area exists, the macro expression is Pin Mura, the product quality and yield are influenced, and the electrical characteristics are influenced, so that the display effect is influenced.
Based on the above problems, the present disclosure provides an improvement on the structure of Pin, and provides a new Lift Pin applied to PECVD reaction chamber to reduce the incidence of Pin Mura.
The support pin can be used for a Plasma Enhanced Chemical Vapor Deposition (PECVD) reaction chamber.
Fig. 3 shows a schematic structural diagram of the support pin used in a PECVD reaction chamber according to an embodiment of the present disclosure, and as shown in fig. 3, the support pin includes: the reaction chamber comprises a needle core 41, a needle sleeve 42 and a needle cap 43, wherein the needle sleeve 42 is covered outside the needle core 41, the bottoms of the needle core 41 and the needle sleeve 42 are also provided with at least one layer of gasket 6, and the bottoms of the needle core 41 and the needle sleeve 42 are fixed on a cavity 5 of the reaction chamber through at least one layer of gasket 6; the parts of the stylet 41, the needle cap 43 and the gasket 6 corresponding to the stylet 41 and the needle sheath 42 are made of conductive materials, and the needle sheath 42 is made of non-conductive materials. If the stylet 41 is grounded, the stylet 41, the cap 43 and the gasket 6 are electrically conductive, and the portions of the stylet 41 and the needle sheath 42 corresponding to the three are grounded, i.e., the cap 43, the stylet 21 and the gasket 6 are grounded.
According to the support Pin structure, the traditional Pin structure is improved, a Pin core made of a conductive material is added in the Pin, the Pin is grounded, the plasma density of a Pin region is increased, the difference between the plasma density of the Pin region and the plasma density of a non-Pin region is reduced, the plasma in a reaction chamber is uniformly distributed, the film quality is optimized, and the occurrence probability of Pin Mura is reduced.
Fig. 4 shows an enlarged view of a portion a in fig. 3 of the embodiment of the present disclosure, as shown in fig. 4, showing the positional relationship between the needle cap 43, the needle core 41 and the needle sheath 42 and the base 1, specifically:
the needle cap 43 is located on the top of the needle core 41 and the needle sheath 42, the needle cap 43 is located in a first receiving groove W1 of the base 1, and the base 1 further defines a second receiving groove W2 penetrating the first receiving groove W1 for receiving the needle core 41 and the needle sheath 42, the area of the first receiving groove W1 is larger than the area of the second receiving groove W2, and the cross-sectional area of the needle cap 43 is also larger than the cross-sectional areas of the needle sheath 42 and the needle core 41.
As shown in fig. 4, fig. 4 further includes: the roller sleeve T is covered outside the needle sleeve 42, is also positioned in the second accommodating groove W2, and has a length greater than or equal to the thickness of the base 1.
In this embodiment, the roller sleeve T covering the needle sleeve 42 can protect the supporting needle to some extent. In addition, the partial roller sleeve T positioned in the second container groove W2 further includes: a plurality of rollers X in contact with the needle sheath 42 for varying the height of the top surface of the needle cap 43 relative to the upper surface of the base 1.
In addition, the material of the needle sheath 42 in this embodiment is ceramic, which is smoother compared to metal, and is beneficial to the up-and-down movement of the base 1, and due to the existence of the ceramic shell, the problem that the metal of the middle needle core 41 is softened at high temperature to cause the connection of the support needle and the roller sleeve T into a whole can be avoided.
In fig. 3, four rollers are taken as an example, and the up-down position relationship between the supporting needle and the base can be changed by driving the rollers, specifically:
when a sample (taking a glass substrate as an example) is on the base, and the glass substrate is depositing a film layer through a PECVD process, the top surface of the needle cap 43 in the support needle is on the same horizontal plane with the upper surface of the base 1; after the PECVD process of the glass substrate is finished, when the glass substrate needs to be moved out of the reaction chamber, the contact friction between the roller X and the needle sleeve 42 drives the up-and-down positional relationship between the support needle and the base 1 to change, usually, the base 1 descends, so that the top surface of the needle cap 43 of the support needle is higher than the upper surface of the base 1, that is, the support needle protrudes out of the base 1, so that the support needle can support the glass substrate, and the glass substrate is moved to a designated position according to the process requirements.
Fig. 5 shows an enlarged view of a portion B in fig. 3 of the embodiment of the present disclosure, as shown in fig. 5, showing the positional relationship between the stylet 41 and the needle sheath 42, the cavity 5 and the gasket 6, specifically:
the portion of the pad 6 corresponding to the hub 41 and the cap 42 (i.e., the pad 61) is made of the same material as the hub 41, i.e., is also conductive, while the rest of the pad 6 is made of ceramic, i.e., is still non-conductive. The structure of the supporting pin is different from the structure of the pad 6 shown in fig. 1, which is a ceramic pad as a whole, and the needle core 41 in the supporting pin shown in fig. 5 is made of a conductive material, and the bottom of the supporting pin is in contact with the cavity through the pad 61, so that grounding is completed.
In this embodiment, the needle core 41, the needle cap 43 and the gasket 61 are made of metal to achieve conduction and grounding, and specifically, the needle core 41, the needle cap 43 and the gasket 61 may be made of aluminum.
In addition, as shown in fig. 3, the cavity 5 and the base 1 are further connected by a wire, specifically, the wire may be a ground wire, so as to achieve the purpose of reducing the number of capacitors, specifically:
fig. 6 is a schematic diagram illustrating a series capacitance of the pedestal in the embodiments of the present disclosure between the Pin region (i.e., at S1) and the non-Pin region, wherein the Pin region is a partial region of the pedestal where Pin can protrude, i.e., a region capable of supporting the glass substrate on the pedestal, and the non-Pin region (i.e., at S2) is a region of the pedestal other than the Pin region. As shown in FIG. 6, the non-Pin region can be seen as three capacitors connected in series by Glass substrate 7, Anodized oxide 9, and Susceptor base 1 (ground); the Pin region can be seen as three capacitors in series, Glass substrate 7, Anodized oxide 8 (i.e., Pin Coating), and the top Pin Cap 43 of Pin4 (grounded).
Based on the above, the supporting Pin provided by the present embodiment has a reduced number of capacitors connected in series in the Pin region compared to the supporting Pin shown in fig. 1, so that the difference between the capacitances of the Pin region and the non-Pin region can be reduced.
In summary, according to the support Pin for the PECVD reaction chamber provided by the embodiment of the present disclosure, on one hand, the support Pin is made of a conductive material at the Pin core, and the Pin core and the pad are grounded, so that the whole support Pin is grounded, the number of capacitors connected in series in the Pin region can be reduced, the plasma density of the Pin region is improved, and the capacitance difference of the non-Pin region in the Pin region is reduced; on the other hand, the uniformity of plasma distribution in the reaction cavity is improved, the membrane quality is improved, the Mura occurrence rate is reduced, and the product quality is improved.
Based on the above embodiments, another embodiment of the present disclosure further provides a plasma enhanced chemical vapor deposition PECVD reaction chamber, which includes: the device comprises a cavity, a base and at least two supporting needles; the base is used for bearing a sample and is provided with a first accommodating groove; the bottom of the supporting needle is fixed on the cavity of the reaction cavity through at least one layer of gasket, and the top of the supporting needle is positioned in the first containing groove of the base.
In the embodiment of the disclosure, the supporting Pin is grounded, and the Pin core inside the supporting Pin is made of a conductive material, so that the whole Pin can be grounded, and the number of capacitors connected in series in the Pin region can be reduced.
In summary, the PECVD reaction chamber provided in the embodiment of the present disclosure can achieve the same technical effects as the above-mentioned support pin for the PECVD reaction chamber, and details are not repeated herein.
It should be clearly understood that this disclosure describes how to make and use particular examples, but the principles of this disclosure are not limited to any details of these examples. Rather, these principles can be applied to many other embodiments based on the teachings of the present disclosure.
Exemplary embodiments of the present disclosure are specifically illustrated and described above. It is to be understood that the present disclosure is not limited to the precise arrangements, instrumentalities, or instrumentalities described herein; on the contrary, the disclosure is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (10)
1. A support needle for use in a reaction chamber, comprising:
a needle core;
the needle sleeve is coated outside the needle core; and
at least one layer of gasket is arranged at the bottoms of the needle core and the needle sleeve;
the parts of the needle core and the gasket, which correspond to the needle core and the needle sleeve, are made of conductive materials, and the needle sleeve is made of non-conductive materials.
2. The support needle of claim 1, further comprising:
the needle cap is positioned on the tops of the needle core and the needle sleeve, the needle cap is positioned in a first accommodating groove of the base, a second accommodating groove which penetrates through the first accommodating groove is formed in the base and is used for accommodating the needle core and the needle sleeve, and the area of the first accommodating groove is larger than that of the second accommodating groove;
wherein the needle cap is made of conductive material.
3. The support needle of claim 2, further comprising:
and the roller sleeve is coated outside the needle sleeve and is also positioned in the second accommodating groove, and the length of the roller sleeve is greater than or equal to the thickness of the base.
4. The supporting needle according to claim 3, wherein the portion of the roller cover located in the second receiving groove further comprises: a plurality of rollers for varying the height of the top surface of the needle cap relative to the upper surface of the base.
5. The supporting needle as claimed in claim 2, wherein the parts of the stylet, the cap and the spacer corresponding to the stylet and the needle sheath are made of metal.
6. The support needle of claim 3, wherein the portion of the stylet, the cap and the spacer corresponding to the stylet and the needle sheath is made of aluminum.
7. The support needle of claim 1, wherein the needle sheath is made of ceramic.
8. The support pin of claim 1, wherein the hub is grounded.
9. A plasma enhanced chemical vapor deposition PECVD reaction chamber, comprising:
a cavity;
the base is used for bearing a sample and is provided with a first accommodating groove; and
at least two support pins according to any one of claims 1 to 8, wherein the bottom of each support pin is fixed on the cavity through at least one layer of gasket, and the top of each support pin is located in the first accommodating groove.
10. The vapor deposition PECVD reaction chamber of claim 9, wherein the support pin is grounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810085370.8A CN108203817B (en) | 2018-01-29 | 2018-01-29 | PECVD reaction chamber and support needle for same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810085370.8A CN108203817B (en) | 2018-01-29 | 2018-01-29 | PECVD reaction chamber and support needle for same |
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| Publication Number | Publication Date |
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| CN108203817A CN108203817A (en) | 2018-06-26 |
| CN108203817B true CN108203817B (en) | 2020-01-10 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3336989B2 (en) * | 1999-03-30 | 2002-10-21 | 日本電気株式会社 | Dry etching equipment |
| US8057602B2 (en) * | 2007-05-09 | 2011-11-15 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
| CN203325834U (en) * | 2013-06-25 | 2013-12-04 | 京东方科技集团股份有限公司 | Support pin and plasma etching apparatus |
| JP2016021524A (en) * | 2014-07-15 | 2016-02-04 | 東京エレクトロン株式会社 | Plasma processing apparatus |
| CN106894002A (en) * | 2017-03-31 | 2017-06-27 | 昆山国显光电有限公司 | A kind of PECVD film formation devices and its film build method |
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