JPH04167425A - Coaxial plasma treatment apparatus - Google Patents
Coaxial plasma treatment apparatusInfo
- Publication number
- JPH04167425A JPH04167425A JP29419790A JP29419790A JPH04167425A JP H04167425 A JPH04167425 A JP H04167425A JP 29419790 A JP29419790 A JP 29419790A JP 29419790 A JP29419790 A JP 29419790A JP H04167425 A JPH04167425 A JP H04167425A
- Authority
- JP
- Japan
- Prior art keywords
- internal electrode
- chamber
- chamber plate
- plasma processing
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009832 plasma treatment Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 8
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体ウェハ表面のレジスト膜のアッシング等
に用いる同軸型プラズマ処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a coaxial plasma processing apparatus used for ashing a resist film on the surface of a semiconductor wafer.
（従来の技術）
外部電極と内部電極とを筒状チャンバーを挟んで同軸状
に配置したプラズマ処理装置として特公昭５３−３３４
７１号公報に開示される装置がある。(Prior art) Japanese Patent Publication No. 53-334 was developed as a plasma processing device in which an external electrode and an internal electrode are arranged coaxially with a cylindrical chamber in between.
There is a device disclosed in Japanese Patent No. 71.
同軸型プラズマ処理装置の一般的な構造は第４図に示す
ように、合成石英等から成る筒状チャンバー１００の上
下端開口をチャンバープレート１０１．１０２で閉塞し
、筒状チャンバー１００の外側には高周波発振器１０３
に接続される板状外部電極１０４を設け、筒状チャンバ
ー１００の内側には外部電極１０４と電気的に絶縁され
た内部電極１０５を設けている。As shown in FIG. 4, the general structure of a coaxial plasma processing apparatus is that the upper and lower openings of a cylindrical chamber 100 made of synthetic quartz or the like are closed with chamber plates 101 and 102, and the outside of the cylindrical chamber 100 is High frequency oscillator 103
A plate-shaped external electrode 104 connected to the cylindrical chamber 100 is provided, and an internal electrode 105 electrically insulated from the external electrode 104 is provided inside the cylindrical chamber 100.
そして、内部電極１０５はパンチングメタル或いは金網
等からなり、外部電極１０４と内部電極１０５との間で
発生したプラズマ中の電荷を持ったイオンや電子による
ダメージが、内部電極１０５の内方に保持具１０６によ
って支持されているウェハ１０７まで及ばないようにし
ている。The internal electrode 105 is made of punched metal, wire mesh, etc., and damage caused by charged ions and electrons in the plasma generated between the external electrode 104 and the internal electrode 105 can cause damage to the inside of the internal electrode 105. The wafer 107 supported by the wafer 106 is prevented from reaching the wafer 107 .
（発明が解決しようとする課題）
上述した従来の同軸型プラズマ処理装置にあっては、内
部電極の下端を金属製の下部チャンバープレートを介し
て接地（アース）してチャージアップを防止する構造と
しているが、完全にチャージアップを防止することがで
きず、ダメージが発生する。(Problems to be Solved by the Invention) The conventional coaxial plasma processing apparatus described above has a structure in which the lower end of the internal electrode is grounded (earthed) via a metal lower chamber plate to prevent charge-up. However, it cannot completely prevent charge-up and damage will occur.
（課題を解決するための手段）
上記課題を解決すべく本発明は、同軸型プラズマ処理装
置の内部電極の上端及び下端を上部チャンバープレート
及び下部チャンバープレートを介して接地するようにし
、特に請求項２に記載の発明にあっては内部電極の上端
と上部チャンバープレートとの間に板ばね等の導電性弾
発部材を介在せしめることで、チャンバー内を減圧する
ことでチャンバーが伸縮しても確実に内部電極上端と上
部チャンバー°プレートとを接触せしめるようにした。(Means for Solving the Problems) In order to solve the above problems, the present invention is such that the upper and lower ends of internal electrodes of a coaxial plasma processing apparatus are grounded via an upper chamber plate and a lower chamber plate, and in particular, as claimed in claim 1. In the invention described in item 2, by interposing a conductive elastic member such as a leaf spring between the upper end of the internal electrode and the upper chamber plate, the pressure inside the chamber is reduced to ensure that the chamber expands and contracts. The upper end of the internal electrode was brought into contact with the upper chamber plate.
（作用）
同軸型プラズマ処理装置の内部電極の上下端を接地する
ことで、チャージアップ量か１７２に減少する。(Function) By grounding the upper and lower ends of the internal electrodes of the coaxial plasma processing apparatus, the charge-up amount is reduced to 172.
（実施例） 以下に本発明の実施例を添付図面に基づいて説明する。(Example) Embodiments of the present invention will be described below based on the accompanying drawings.
第１図は本発明に係る同軸型プラズマ処理装置の内部構
造を示す斜視図、第２図は同プラズマ処理装置の縦断面
図であり、同軸型プラズマ処理装置は合成石英、パイレ
ックスガラス等から成る筒状チャンバー１の上下端をア
ルミニウム或いは銅等の導電性に優れた金属材料にて構
成される上部チャンバープレート２及び下部チャンバー
プレート３にて閉塞し、下部チャンバープレート３につ
いてはその一部を昇降プレート４とし、この昇降プレー
ト４上に多数のウェハＷ（５０枚）を保持するウェハ保
持体５を立設している。FIG. 1 is a perspective view showing the internal structure of a coaxial plasma processing apparatus according to the present invention, and FIG. 2 is a longitudinal sectional view of the same plasma processing apparatus. The coaxial plasma processing apparatus is made of synthetic quartz, Pyrex glass, etc. The upper and lower ends of the cylindrical chamber 1 are closed with an upper chamber plate 2 and a lower chamber plate 3 made of a highly conductive metal material such as aluminum or copper, and a portion of the lower chamber plate 3 is raised and lowered. A wafer holder 5 for holding a large number of wafers W (50 wafers) is erected on the elevating plate 4.
また、筒状チャンバー１の外周には高周波発振器６に接
続される筒状外部電極７を配置し、筒状チャンバー１の
内方には前記外部電極７と同軸状に内部電極８を配置し
、外部電極７と内部電極８との間をプラズマ発生空間９
としている。ここで、同軸状とは外部電極７と内部電極
８の中心が完全に一致するものだけでなく多少ずれてい
るものをも意味する。Further, a cylindrical external electrode 7 connected to a high frequency oscillator 6 is arranged on the outer periphery of the cylindrical chamber 1, and an internal electrode 8 is arranged coaxially with the external electrode 7 inside the cylindrical chamber 1. A plasma generation space 9 is provided between the external electrode 7 and the internal electrode 8.
It is said that Here, coaxial means not only that the centers of the external electrode 7 and the internal electrode 8 are completely coincident, but also that they are slightly shifted.
更に、内部電極８はアルミニウム合金からなるパンチン
グメタル或いは金網から構成され、多数の小孔８ａ・・
・を有し、その下端部は前記下部チャンバープレート３
に、上端部は前記上部チャンバープレート２に固着され
、これらプレートを介して内部電極８は接地される。Further, the internal electrode 8 is made of punched metal made of aluminum alloy or wire mesh, and has a large number of small holes 8a...
・The lower end portion thereof is connected to the lower chamber plate 3.
The upper end portion is fixed to the upper chamber plate 2, and the internal electrode 8 is grounded through these plates.
ところで、プラズマを発生せしめるにはチャンバー１内
を減圧しなければならない。そして、チャンバー内を減
圧するとチャンバーが外部の大気圧の影響によって収縮
する。この収縮量が大きい場合、内部電極８の上端と上
部チャンバープレート２とを剛に固着しておくと、内部
電極と上部チャンバープレート２との固着部或いは上部
チャンバープレート２とチャンバー１との固着部等に無
理な力が作用し、チャンバーの気密性か悪くなったり接
地が不完全になったりする。By the way, in order to generate plasma, the pressure inside the chamber 1 must be reduced. Then, when the pressure inside the chamber is reduced, the chamber contracts due to the influence of external atmospheric pressure. If the amount of this contraction is large, if the upper end of the internal electrode 8 and the upper chamber plate 2 are firmly fixed, the fixed part between the internal electrode and the upper chamber plate 2 or the fixed part between the upper chamber plate 2 and the chamber 1 will be damaged. If excessive force is applied to the chamber, the airtightness of the chamber may become poor or the grounding may become incomplete.
そこで、第３図に示す別実施例にあっては、内部電極８
の上端部と上部チャンバープレート２との間に板ばね１
０を介在せしめ、チャンバー１か伸縮しても確実に内部
電極８の上下端を接地し得る構造とした。尚、板ばね１
０はコイルスプリング等の導電性弾発材であればよい。Therefore, in another embodiment shown in FIG.
A leaf spring 1 is installed between the upper end and the upper chamber plate 2.
0 to provide a structure in which the upper and lower ends of the internal electrodes 8 can be reliably grounded even if the chamber 1 expands or contracts. In addition, leaf spring 1
0 may be a conductive elastic material such as a coil spring.
本発明に係る同軸型プラズマ処理装置と、従来構造の同
軸型プラズマ処理装置を用い、以下の処理条件でウェハ
上に形成したホトレジストを除去した。Photoresist formed on a wafer was removed under the following processing conditions using a coaxial plasma processing apparatus according to the present invention and a coaxial plasma processing apparatus having a conventional structure.
反応ガス・・・・・・・・・・・・０□反応ガス量・・
・・・・・・・・１１０００３ＣＣ周波数・・・・・・
・・・・・・・・１３．５６ＭＨｚ印加電圧・・・・・
・・・・・・・１ｋＷ圧力・・・・・・・・・・・・・
・・・１．０Ｔｏｒｒ以上のブラ、ズマ処理において、
本発明に係る同軸型プラズマ処理装置を用いた場合には
、従来構造の同軸型プラズマ処理装置を用いた場合に比
べチャージアップ量は１／２以下であった。Reaction gas・・・・・・・・・・・・0□Reaction gas amount・・
・・・・・・・・・110003CC frequency・・・・・・
......13.56MHz applied voltage...
・・・・・・1kW pressure・・・・・・・・・・・・・・・
...In bra and Zuma processing at 1.0 Torr or more,
When the coaxial plasma processing apparatus according to the present invention was used, the amount of charge-up was 1/2 or less compared to when a coaxial plasma processing apparatus with a conventional structure was used.
（効果）
以上に説明したように本発明によれば、同軸型プラズマ
処理装置の内部電極の上端及び下端を上部チャンバープ
レート及び下部チャンバープレートを介して接地するよ
うにしたので、チャージアップ量が従来に比べ大幅に減
少し、その結果内部電極のシールド効果が高くなり、プ
ラズマ中の電荷を持ったイオンや電子によるダメージを
防止することができる。(Effects) As explained above, according to the present invention, the upper and lower ends of the internal electrodes of the coaxial plasma processing apparatus are grounded through the upper chamber plate and the lower chamber plate, so that the amount of charge-up is reduced compared to the conventional method. As a result, the shielding effect of the internal electrode becomes high, and damage caused by charged ions and electrons in the plasma can be prevented.
特に内部電極の上端と上部チャンバープレートとの間に
板ばね等の導電性弾発部材を介在せしめれば、チャンバ
ーが伸縮しても確実に内部電極上端と上部チャンバープ
レートとを接触せしめることができ、上記の効果を確実
に発揮し得る。In particular, if a conductive resilient member such as a leaf spring is interposed between the upper end of the internal electrode and the upper chamber plate, the upper end of the internal electrode and the upper chamber plate can be reliably brought into contact even if the chamber expands or contracts. , the above effects can be reliably achieved.
第１図は本発明に係る同軸型プラズマ処理装置の内部構
造を示す斜視図、第２図は同プラズマ処理装置の縦断面
図、第３図は別実施例の上部構造を示す断面図、第４図
は従来の同軸型プラスマ処理装置の縦断面図である。
尚、図面中１はチャンバー、２は上部チャンバープレー
ト、３は下部チャンバープレート、４は下部チャンバー
プレートの一部をなす昇降プレート、７は外部電極、８
は内部電極、９はプラズマ発生空間、１０は導電性弾発
部材である。FIG. 1 is a perspective view showing the internal structure of a coaxial plasma processing apparatus according to the present invention, FIG. 2 is a longitudinal sectional view of the same plasma processing apparatus, and FIG. 3 is a sectional view showing the upper structure of another embodiment. FIG. 4 is a longitudinal sectional view of a conventional coaxial plasma processing apparatus. In the drawings, 1 is a chamber, 2 is an upper chamber plate, 3 is a lower chamber plate, 4 is a lift plate forming a part of the lower chamber plate, 7 is an external electrode, 8
9 is an internal electrode, 9 is a plasma generation space, and 10 is a conductive elastic member.
Claims (2)
外部電極を配置し、筒状チャンバーの内側に前記外部電
極と電気的に絶縁されるとともに多数の小孔を形成した
内部電極を同軸状に配置し、筒状チャンバーの上下端開
口をチャンバープレートにて閉塞したプラズマ処理装置
において、前記内部電極の下端は下部チャンバープレー
トを介して接地され、内部電極の上端は上部チャンバー
プレートを介して接地されていることを特徴とする同軸
型プラズマ処理装置。(1) An external electrode connected to a high-frequency oscillator is placed on the outside of the cylindrical chamber, and an internal electrode that is electrically insulated from the external electrode and has many small holes is placed coaxially inside the cylindrical chamber. In a plasma processing apparatus in which the upper and lower openings of a cylindrical chamber are closed with chamber plates, the lower ends of the internal electrodes are grounded through the lower chamber plate, and the upper ends of the internal electrodes are grounded through the upper chamber plate. A coaxial plasma processing device characterized by:
は導電性弾発部材を介して接触していることを特徴とす
る請求項１に記載の同軸型プラズマ処理装置。(2) The coaxial plasma processing apparatus according to claim 1, wherein the upper end of the internal electrode and the upper chamber plate are in contact with each other via a conductive elastic member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29419790A JPH0775228B2 (en) | 1990-10-31 | 1990-10-31 | Coaxial type plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29419790A JPH0775228B2 (en) | 1990-10-31 | 1990-10-31 | Coaxial type plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04167425A true JPH04167425A (en) | 1992-06-15 |
| JPH0775228B2 JPH0775228B2 (en) | 1995-08-09 |
Family
ID=17804575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29419790A Expired - Lifetime JPH0775228B2 (en) | 1990-10-31 | 1990-10-31 | Coaxial type plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0775228B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5429705A (en) * | 1993-02-25 | 1995-07-04 | Leybold Aktiengesellschaft | Apparatus for coating and/or etching substrates in a vacuum chamber |
| KR101023091B1 (en) * | 2008-08-14 | 2011-03-24 | 김경수 | Electrode assembly for processing plasma |
| CN106733264A (en) * | 2016-08-30 | 2017-05-31 | 无锡荣坚五金工具有限公司 | A kind of polymer coated device of big volume plasma of tubulose |
-
1990
- 1990-10-31 JP JP29419790A patent/JPH0775228B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5429705A (en) * | 1993-02-25 | 1995-07-04 | Leybold Aktiengesellschaft | Apparatus for coating and/or etching substrates in a vacuum chamber |
| KR101023091B1 (en) * | 2008-08-14 | 2011-03-24 | 김경수 | Electrode assembly for processing plasma |
| CN106733264A (en) * | 2016-08-30 | 2017-05-31 | 无锡荣坚五金工具有限公司 | A kind of polymer coated device of big volume plasma of tubulose |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0775228B2 (en) | 1995-08-09 |
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