JPH0775228B2 - Coaxial type plasma processing equipment - Google Patents
Coaxial type plasma processing equipmentInfo
- Publication number
- JPH0775228B2 JPH0775228B2 JP29419790A JP29419790A JPH0775228B2 JP H0775228 B2 JPH0775228 B2 JP H0775228B2 JP 29419790 A JP29419790 A JP 29419790A JP 29419790 A JP29419790 A JP 29419790A JP H0775228 B2 JPH0775228 B2 JP H0775228B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- plasma processing
- processing apparatus
- coaxial
- internal electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体ウェハ表面のレジスト膜のアッシング等
に用いる同軸型プラズマ処理装置に関する。TECHNICAL FIELD The present invention relates to a coaxial plasma processing apparatus used for ashing a resist film on a surface of a semiconductor wafer.
（従来の技術） 外部電極と内部電極とを筒状チャンバーを挟んで同軸状
に配置したプラズマ処理装置として特公昭53−33471号
公報に開示される装置がある。(Prior Art) There is an apparatus disclosed in Japanese Patent Publication No. 53-33471 as a plasma processing apparatus in which an external electrode and an internal electrode are coaxially arranged with a cylindrical chamber interposed therebetween.
同軸型プラズマ処理装置の一般的な構造は第４図に示す
ように、合成石英等から成る筒状チャンバー100の上下
端開口をチャンバープレート101,102で閉塞し、筒状チ
ャンバー100の外側には高周波発振器103に接続される板
状外部電極104を設け、筒状チャンバー100の内側には外
部電極104と電気的に絶縁された内部電極105を設けてい
る。As shown in FIG. 4, the general structure of the coaxial plasma processing apparatus is that the upper and lower openings of the cylindrical chamber 100 made of synthetic quartz or the like are closed by chamber plates 101 and 102, and a high frequency oscillator is provided outside the cylindrical chamber 100. A plate-shaped external electrode 104 connected to 103 is provided, and an internal electrode 105 electrically insulated from the external electrode 104 is provided inside the cylindrical chamber 100.
そして、内部電極105はパンチングメタル或いは金網等
からなり、外部電極104と内部電極105との間で発生した
プラズマ中の電荷を持ったイオンや電子によるダメージ
が、内部電極105の内方に保持具106によって支持されて
いるウェハ107まで及ばないようにしている。The internal electrode 105 is made of punching metal, wire mesh, or the like, and damage caused by charged ions or electrons in the plasma generated between the external electrode 104 and the internal electrode 105 is retained inside the internal electrode 105. The wafer 107 supported by 106 is not reached.
（発明が解決しようとする課題） 上述した従来の同軸型プラズマ処理装置にあっては、内
部電極の下端を金属製の下部チャンバープレートを介し
て接地（アース）してチャージアップを防止する構造と
しているが、完全にチャージアップを防止することがで
きず、ダメージが発生する。(Problems to be Solved by the Invention) In the conventional coaxial plasma processing apparatus described above, the lower end of the internal electrode is grounded (grounded) via the lower chamber plate made of metal to prevent charge-up. However, it is impossible to completely prevent the charge-up and damage occurs.
（課題を解決するための手段） 上記課題を解決すべく本発明は、同軸型プラズマ処理装
置の内部電極の上端及び下端を上部チャンバープレート
及び下部チャンバープレートを介して接地するように
し、特に請求項２に記載の発明にあっては内部電極の上
端と上部チャンバープレートとの間に板ばね等の導電性
弾発部材を介在せしめることで、チャンバー内を減圧す
ることでチャンバーが伸縮しても確実に内部電極上端と
上部チャンバープレートとを接触せしめるようにした。(Means for Solving the Problems) In order to solve the above problems, the present invention is configured such that the upper and lower ends of internal electrodes of a coaxial plasma processing apparatus are grounded through an upper chamber plate and a lower chamber plate, and particularly In the invention described in 2, by interposing a conductive elastic member such as a leaf spring between the upper end of the internal electrode and the upper chamber plate, it is possible to reduce the pressure in the chamber and ensure the expansion and contraction of the chamber. The upper end of the internal electrode was brought into contact with the upper chamber plate.
（作用） 同軸型プラズマ処理装置の内部電極の上下端を接地する
ことで、チャージアップ量が1/2に減少する。(Function) By grounding the upper and lower ends of the internal electrodes of the coaxial type plasma processing apparatus, the charge-up amount is reduced to half.
（実施例） 以下に本発明の実施例を添付図面に基づいて説明する。(Example) Below, the Example of this invention is described based on an accompanying drawing.
第１図は本発明に係る同軸型プラズマ処理装置の内部構
造を示す斜視図、第２図は同プラズマ処理装置の縦断面
図であり、同軸型プラズマ処理装置は合成石英、パイレ
ックスガラス等から成る筒状チャンバー１の上下端をア
ルミニウム或いは銅等の導電性に優れた金属材料にて構
成される上部チャンバープレート２及び下部チャンバー
プレート３にて閉塞し、下部チャンバープレート３につ
いてはその一部を昇降プレート４とし、この昇降プレー
ト４上に多数のウェハＷ（50枚）を保持するウェハ保持
体５を立設している。FIG. 1 is a perspective view showing an internal structure of a coaxial type plasma processing apparatus according to the present invention, and FIG. 2 is a longitudinal sectional view of the plasma processing apparatus. The coaxial type plasma processing apparatus is made of synthetic quartz, Pyrex glass or the like. The upper and lower ends of the cylindrical chamber 1 are closed by an upper chamber plate 2 and a lower chamber plate 3 made of a highly conductive metal material such as aluminum or copper, and a part of the lower chamber plate 3 is moved up and down. A plate 4 is provided, and a wafer holder 5 that holds a large number of wafers W (50 pieces) is erected on the elevating plate 4.
また、筒状チャンバー１の外周には高周波発振器６に接
続される筒状外部電極７を配置し、筒状チャンバー１の
内方には前記外部電極７と同軸状に内部電極８を配置
し、外部電極７と内部電極８との間をプラズマ発生空間
９としている。ここで、同軸状とは外部電極７と内部電
極８の中心が完全に一致するものだけでなく多少ずれて
いるものをも意味する。Further, a cylindrical outer electrode 7 connected to the high-frequency oscillator 6 is arranged on the outer circumference of the cylindrical chamber 1, and an inner electrode 8 is arranged inside the cylindrical chamber 1 coaxially with the outer electrode 7. A plasma generating space 9 is defined between the outer electrode 7 and the inner electrode 8. Here, the coaxial shape means not only that the centers of the outer electrode 7 and the inner electrode 8 are completely coincident but also that they are slightly deviated from each other.
更に、内部電極８はアルミニウム合金からなるパンチン
グメタル或いは金網から構成され、多数の小孔8a…を有
し、その下端部は前記下部チャンバープレート３に、上
端部は前記上部チャンバープレート２に固着され、これ
らプレートを介して内部電極８は接地される。Further, the internal electrode 8 is made of punching metal or wire mesh made of aluminum alloy and has a large number of small holes 8a ..., The lower end of which is fixed to the lower chamber plate 3 and the upper end is fixed to the upper chamber plate 2. The internal electrode 8 is grounded through these plates.
ところで、プラズマを発生せしめるにはチャンバー１内
を減圧しなければならない。そして、チャンバー内を減
圧するとチャンバーが外気の大気圧の影響によって収縮
する。この収縮量が大きい場合、内部電極８の上端と上
部チャンバープレート２とを剛に固着しておくと、内部
電極と上部チャンバープレート２との固着部或いは上部
チャンバープレート２とチャンバー１との固着部等に無
理な力が作用し、チャンバーの気密性が悪くなったり接
地が不完全になったりする。By the way, in order to generate plasma, the pressure inside the chamber 1 must be reduced. When the pressure inside the chamber is reduced, the chamber contracts due to the influence of the atmospheric pressure of the outside air. When the amount of contraction is large, if the upper end of the internal electrode 8 and the upper chamber plate 2 are rigidly fixed, the fixed portion between the internal electrode and the upper chamber plate 2 or the fixed portion between the upper chamber plate 2 and the chamber 1 Unreasonable force acts on the chamber, and the airtightness of the chamber deteriorates or the grounding becomes incomplete.
そこで、第３図に示す別実施例にあっては、内部電極８
の上端部と上部チャンバープレート２との間に板ばね10
を介在せしめ、チャンバー１が伸縮しても確実に内部電
極８の上下端を接地し得る構造とした。尚、板ばね10は
コイルスプリング等の導電性弾発材であればよい。Therefore, in another embodiment shown in FIG.
A leaf spring 10 is provided between the upper end of the chamber and the upper chamber plate 2.
With the interposition of, the upper and lower ends of the internal electrode 8 can be reliably grounded even if the chamber 1 expands and contracts. The leaf spring 10 may be a conductive elastic material such as a coil spring.
本発明に係る同軸型プラズマ処理装置と、従来構造の同
軸型プラズマ処理装置を用い、以下の処理条件でウェハ
上に形成したホトレジストを除去した。Using the coaxial plasma processing apparatus according to the present invention and the coaxial plasma processing apparatus having the conventional structure, the photoresist formed on the wafer was removed under the following processing conditions.
反応ガス‥‥‥‥‥‥O2 反応ガス量‥‥‥‥‥1000SCCM 周波数‥‥‥‥‥‥‥13.56MHz 印加電圧‥‥‥‥‥‥1kW 圧力‥‥‥‥‥‥‥‥1.0Torr 以上のプラズマ処理において、本発明に係る同軸型プラ
ズマ処理装置を用いた場合には、従来構造の同軸型プラ
ズマ処理装置を用いた場合に比べチャージアップ量は1/
2以下であった。Reactant gas ‥‥‥‥‥‥‥ O 2 Reactant gas quantity ‥‥‥‥‥‥ 1000SCCM Frequency ‥‥‥‥‥‥‥ 13.56MHz Applied voltage ‥‥‥‥‥‥ 1kW Pressure ‥‥‥‥‥‥‥‥ 1.0 Torr In the plasma processing of, when the coaxial type plasma processing apparatus according to the present invention is used, the charge-up amount is 1/100 compared to the case of using the coaxial type plasma processing apparatus of the conventional structure.
It was less than 2.
（効果） 以上に説明したように本発明によれば、同軸型プラズマ
処理装置の内部電極の上端及び下端を上部チャンバープ
レート及び下部チャンバープレートを介して接地するよ
うにしたので、チャージアップ量が従来に比べ大幅に減
少し、その結果内部電極のシールド効果が高くなり、プ
ラズマ中の電荷を持ったイオンや電子によるダメージを
防止することができる。(Effect) As described above, according to the present invention, the upper end and the lower end of the internal electrode of the coaxial plasma processing apparatus are grounded via the upper chamber plate and the lower chamber plate. It is significantly reduced as compared with the above, and as a result, the shield effect of the internal electrode is enhanced, and damage due to charged ions or electrons in plasma can be prevented.
特に内部電極の上端と上部チャンバープレートとの間に
板ばね等の導電性弾発部材を介在せしめれば、チャンバ
ーが伸縮しても確実に内部電極上端と上部チャンバープ
レートとを接触せしめることができ、上記の効果を確実
に発揮し得る。In particular, if a conductive elastic member such as a leaf spring is interposed between the upper end of the internal electrode and the upper chamber plate, the upper end of the internal electrode can be reliably brought into contact with the upper chamber plate even if the chamber expands or contracts. The above effect can be surely exhibited.
第１図は本発明に係る同軸型プラズマ処理装置の内部構
造を示す斜視図、第２図は同プラズマ処理装置の縦断面
図、第３図は別実施例の上部構造を示す断面図、第４図
は従来の同軸型プラズマ処理装置の縦断面図である。 尚、図面中１はチャンバー、２は上部チャンバープレー
ト、３は下部チャンバープレート、４は下部チャンバー
プレートの一部をなす昇降プレート、７は外部電極、８
は内部電極、９はプラズマ発生空間、10は導電性弾発部
材である。FIG. 1 is a perspective view showing an internal structure of a coaxial type plasma processing apparatus according to the present invention, FIG. 2 is a vertical sectional view of the plasma processing apparatus, and FIG. 3 is a sectional view showing an upper structure of another embodiment. FIG. 4 is a longitudinal sectional view of a conventional coaxial type plasma processing apparatus. In the drawings, 1 is a chamber, 2 is an upper chamber plate, 3 is a lower chamber plate, 4 is an elevating plate which is a part of the lower chamber plate, 7 is an external electrode, and 8 is an external electrode.
Is an internal electrode, 9 is a plasma generating space, and 10 is a conductive elastic member.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松下 淳 神奈川県高座郡寒川町一之宮７丁目８番22 号 (56)参考文献 特開 昭62−139332（ＪＰ，Ａ) 特開 昭52−75985（ＪＰ，Ａ) 特開 昭57−69744（ＪＰ，Ａ) 特公 昭53−33471（ＪＰ，Ｂ２) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Jun Matsushita 7-8-22 Ichinomiya Ichinomiya, Samukawa-cho, Takaza-gun, Kanagawa (56) References JP-A-62-139332 (JP, A) JP-A-52-75985 ( JP, A) JP 57-69744 (JP, A) JP 53-33471 (JP, B2)
Claims (2)
続する外部電極を配置し、筒状チャンバーの内側に前記
外部電極と電気的に絶縁されるとともに多数の小孔を形
成した内部電極を同軸状に配置し、筒状チャンバーの上
下端開口をチャンバープレートにて閉塞したプラズマ処
理装置において、前記内部電極の下部チャンバープレー
トを介して接地され、内部電極の上端は上部チャンバー
プレートを介して接地されていることを特徴とする同軸
型プラズマ処理装置。1. An external electrode connected to a high-frequency oscillator is arranged outside a cylindrical chamber, and an internal electrode, which is electrically insulated from the external electrode and has a large number of small holes, is coaxial inside the cylindrical chamber. In a plasma processing apparatus in which the upper and lower openings of a cylindrical chamber are closed by chamber plates, the inner chamber is grounded via the lower chamber plate, and the upper ends of the inner electrodes are grounded via the upper chamber plate. A coaxial plasma processing apparatus characterized in that.
ートとは導電性弾発部材を介して接触していることを特
徴とする請求項１に記載の同軸型プラズマ処理装置。2. The coaxial type plasma processing apparatus according to claim 1, wherein the upper end of the internal electrode and the upper chamber plate are in contact with each other via a conductive elastic member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29419790A JPH0775228B2 (en) | 1990-10-31 | 1990-10-31 | Coaxial type plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29419790A JPH0775228B2 (en) | 1990-10-31 | 1990-10-31 | Coaxial type plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04167425A JPH04167425A (en) | 1992-06-15 |
| JPH0775228B2 true JPH0775228B2 (en) | 1995-08-09 |
Family
ID=17804575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29419790A Expired - Lifetime JPH0775228B2 (en) | 1990-10-31 | 1990-10-31 | Coaxial type plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0775228B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4305748A1 (en) * | 1993-02-25 | 1994-09-01 | Leybold Ag | Appliance for deposition onto, and/or etching of, substrates in a vacuum chamber |
| KR101023091B1 (en) * | 2008-08-14 | 2011-03-24 | 김경수 | Electrode assembly for processing plasma |
| CN106216192A (en) * | 2016-08-30 | 2016-12-14 | 无锡荣坚五金工具有限公司 | A kind of tubulose polymer coated device of big volume plasma |
-
1990
- 1990-10-31 JP JP29419790A patent/JPH0775228B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04167425A (en) | 1992-06-15 |
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