JPS6337510B2 - - Google Patents

Info

Publication number
JPS6337510B2
JPS6337510B2 JP54054645A JP5464579A JPS6337510B2 JP S6337510 B2 JPS6337510 B2 JP S6337510B2 JP 54054645 A JP54054645 A JP 54054645A JP 5464579 A JP5464579 A JP 5464579A JP S6337510 B2 JPS6337510 B2 JP S6337510B2
Authority
JP
Japan
Prior art keywords
groove
anisotropic etching
etching
semiconductor substrate
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54054645A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55146935A (en
Inventor
Hisashi Haneda
Tetsuo Ichikawa
Juki Shimada
Hideyoshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5464579A priority Critical patent/JPS55146935A/ja
Publication of JPS55146935A publication Critical patent/JPS55146935A/ja
Publication of JPS6337510B2 publication Critical patent/JPS6337510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Weting (AREA)
JP5464579A 1979-05-02 1979-05-02 Manufacturing of semiconductor device Granted JPS55146935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5464579A JPS55146935A (en) 1979-05-02 1979-05-02 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5464579A JPS55146935A (en) 1979-05-02 1979-05-02 Manufacturing of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55146935A JPS55146935A (en) 1980-11-15
JPS6337510B2 true JPS6337510B2 (enExample) 1988-07-26

Family

ID=12976504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5464579A Granted JPS55146935A (en) 1979-05-02 1979-05-02 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55146935A (enExample)

Also Published As

Publication number Publication date
JPS55146935A (en) 1980-11-15

Similar Documents

Publication Publication Date Title
US4853345A (en) Process for manufacture of a vertical DMOS transistor
US5721162A (en) All-silicon monolithic motion sensor with integrated conditioning circuit
KR890011103A (ko) 반도체 집적회로장치의 제조방법
US8193060B2 (en) Method of manufacturing a semiconductor device
US5021846A (en) MOS semiconductor device with an inverted U-shaped gate
JPS5873156A (ja) 半導体装置
US6803317B2 (en) Method of making a vertical gate semiconductor device
JPS6337510B2 (enExample)
US3631307A (en) Semiconductor structures having improved high-frequency response and power dissipation capabilities
CN104658907B (zh) 一种逆阻型绝缘栅型双极晶体管的制作方法
JP3226669B2 (ja) 半導体装置
JP2662879B2 (ja) 絶縁ゲート電界効果トランジスタの製造方法
JPS6331946B2 (enExample)
JPH0823093A (ja) 半導体装置およびその製造方法
JPS62115775A (ja) 半導体装置
JP2803187B2 (ja) 半導体装置の製造方法
JP2010045240A (ja) 縦型ｍｏｓｆｅｔ
KR0167662B1 (ko) 반도체장치의 제조방법
JPH0862078A (ja) 圧力センサー及びその製造方法
JPS5838939B2 (ja) 集積回路
JP2691740B2 (ja) リレー装置
KR100384404B1 (ko) ＬＤＯ（Ｌｏｗ Ｄｒｏｐ Ｏｕｔｐｕｔ）레귤규레이터 및 그 제조방법
KR960015738A (ko) 반도체소자 및 그 제조방법
JP2663581B2 (ja) 半導体装置
JPH0265271A (ja) ダイナミック型メモリ