JPS6332273B2 - - Google Patents

Info

Publication number
JPS6332273B2
JPS6332273B2 JP58082932A JP8293283A JPS6332273B2 JP S6332273 B2 JPS6332273 B2 JP S6332273B2 JP 58082932 A JP58082932 A JP 58082932A JP 8293283 A JP8293283 A JP 8293283A JP S6332273 B2 JPS6332273 B2 JP S6332273B2
Authority
JP
Japan
Prior art keywords
source
semiconductor
region
layer
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58082932A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59207669A (ja
Inventor
Noryuki Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58082932A priority Critical patent/JPS59207669A/ja
Publication of JPS59207669A publication Critical patent/JPS59207669A/ja
Publication of JPS6332273B2 publication Critical patent/JPS6332273B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58082932A 1983-05-10 1983-05-10 電界効果トランジスタの製造方法 Granted JPS59207669A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58082932A JPS59207669A (ja) 1983-05-10 1983-05-10 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58082932A JPS59207669A (ja) 1983-05-10 1983-05-10 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59207669A JPS59207669A (ja) 1984-11-24
JPS6332273B2 true JPS6332273B2 (cs) 1988-06-29

Family

ID=13788000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58082932A Granted JPS59207669A (ja) 1983-05-10 1983-05-10 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59207669A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62296566A (ja) * 1986-06-17 1987-12-23 Matsushita Electronics Corp 電界効果トランジスタおよびその製造方法
JPH081910B2 (ja) * 1987-05-13 1996-01-10 日本電気株式会社 電界効果型半導体装置及びその製造方法
JPH081911B2 (ja) * 1987-06-24 1996-01-10 日本電気株式会社 電界効果型半導体装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768077A (en) * 1980-10-15 1982-04-26 Nippon Telegr & Teleph Corp <Ntt> Manufacture of schottky gate type field effect transistor

Also Published As

Publication number Publication date
JPS59207669A (ja) 1984-11-24

Similar Documents

Publication Publication Date Title
KR970004457B1 (ko) 반도체 장치 및 그 제조 방법
US3823352A (en) Field effect transistor structures and methods
US4351099A (en) Method of making FET utilizing shadow masking and diffusion from a doped oxide
JPH0260063B2 (cs)
US5877047A (en) Lateral gate, vertical drift region transistor
JPH01175265A (ja) 電界効果トランジスタ及びその製造方法
JP3040786B2 (ja) チャンネル限定層を使用するＧａＡｓ ＦＥＴの製造方法
JPS6332273B2 (cs)
US4923824A (en) Simplified method of fabricating lightly doped drain insulated gate field effect transistors
JPH04225533A (ja) 電界効果トランジスタ
JPS6122873B2 (cs)
JPH0213927B2 (cs)
JPS59222966A (ja) 半導体装置
JP2921930B2 (ja) 電界効果トランジスタ、その製造方法およびこれを用いた半導体集積回路
JPS62115781A (ja) 電界効果トランジスタ
JPH0523497B2 (cs)
JP2996267B2 (ja) 絶縁ゲート型電界効果トランジスタの製造方法
JPS6223175A (ja) 半導体装置の製造方法
JP3018885B2 (ja) 半導体装置の製造方法
JPS6146990B2 (cs)
JP2616032B2 (ja) 電界効果トランジスタの製造方法
KR910004319B1 (ko) 고전자 이동 트랜지스터의 제조방법
KR930009811B1 (ko) 금속-반도체 전계효과 트랜지스터 및 그 제조방법
JP3038720B2 (ja) 電界効果トランジスタの製造方法
JPH0121570Y2 (cs)