JPS6331896B2 - - Google Patents

Info

Publication number
JPS6331896B2
JPS6331896B2 JP56166547A JP16654781A JPS6331896B2 JP S6331896 B2 JPS6331896 B2 JP S6331896B2 JP 56166547 A JP56166547 A JP 56166547A JP 16654781 A JP16654781 A JP 16654781A JP S6331896 B2 JPS6331896 B2 JP S6331896B2
Authority
JP
Japan
Prior art keywords
lens
electron beam
magnetic
deflection
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56166547A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57105953A (en
Inventor
Kurisuchan Fuaifuaa Hansu
Otsutoo Rangunaa Gyunsaa
Andorisu Suchuuransu Marisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS57105953A publication Critical patent/JPS57105953A/ja
Publication of JPS6331896B2 publication Critical patent/JPS6331896B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP56166547A 1980-11-06 1981-10-20 Electron beam projecting device Granted JPS57105953A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/204,427 US4376249A (en) 1980-11-06 1980-11-06 Variable axis electron beam projection system

Publications (2)

Publication Number Publication Date
JPS57105953A JPS57105953A (en) 1982-07-01
JPS6331896B2 true JPS6331896B2 (cg-RX-API-DMAC7.html) 1988-06-27

Family

ID=22757826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56166547A Granted JPS57105953A (en) 1980-11-06 1981-10-20 Electron beam projecting device

Country Status (4)

Country Link
US (1) US4376249A (cg-RX-API-DMAC7.html)
EP (1) EP0051733B1 (cg-RX-API-DMAC7.html)
JP (1) JPS57105953A (cg-RX-API-DMAC7.html)
DE (1) DE3162439D1 (cg-RX-API-DMAC7.html)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206173A (en) * 1981-06-15 1982-12-17 Nippon Telegr & Teleph Corp <Ntt> Focusing deflecting device for charged corpuscule beam
JPS585954A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd 動的焦点補正装置
JPS585955A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd 動的偏向非点の補正装置
US4544846A (en) * 1983-06-28 1985-10-01 International Business Machines Corporation Variable axis immersion lens electron beam projection system
US4912405A (en) * 1985-08-16 1990-03-27 Schlumberger Technology Corporation Magnetic lens and electron beam deflection system
JPS6298544A (ja) * 1985-10-25 1987-05-08 Hitachi Ltd 荷電粒子線装置
KR920000941B1 (ko) * 1988-02-16 1992-01-31 후지쓰 가부시끼가이샤 전자빔 노광장치
NL8801208A (nl) * 1988-05-09 1989-12-01 Philips Nv Geladen deeltjes bundel apparaat.
US4945246A (en) * 1989-03-24 1990-07-31 International Business Machines Corporation Tri-deflection electron beam system
JPH039510A (ja) * 1989-06-07 1991-01-17 Fujitsu Ltd 電子ビーム露光装置
US5136166A (en) * 1990-05-17 1992-08-04 Etec Systems, Inc. Temperature stable magnetic deflection assembly
US5523580A (en) * 1993-12-23 1996-06-04 International Business Machines Corporation Reticle having a number of subfields
US5674413A (en) * 1993-12-23 1997-10-07 International Business Machines Corporation Scattering reticle for electron beam systems
US5466904A (en) * 1993-12-23 1995-11-14 International Business Machines Corporation Electron beam lithography system
US5635719A (en) * 1996-07-23 1997-06-03 International Business Machines Corporation Variable curvilinear axis deflection means for particle optical lenses
US5757010A (en) * 1996-12-18 1998-05-26 International Business Machines Corporation Curvilinear variable axis lens correction with centered dipoles
JP3993334B2 (ja) 1998-04-27 2007-10-17 株式会社東芝 荷電ビーム描画装置
JP3946899B2 (ja) * 1999-03-26 2007-07-18 株式会社東芝 エネルギービーム装置における光学系の調整方法
US6781680B1 (en) 1999-03-26 2004-08-24 Kabushiki Kaisha Toshiba Optical system adjusting method for energy beam apparatus
DE19944857A1 (de) * 1999-09-18 2001-03-22 Ceos Gmbh Elektronenoptische Linsenanordnung mit weit verschiebbarer Achse
KR100576940B1 (ko) * 1999-12-14 2006-05-10 어플라이드 머티어리얼스, 인코포레이티드 하전 입자 빔을 사용하여 표본을 검사하는 방법 및 시스템
US6768117B1 (en) 2000-07-25 2004-07-27 Applied Materials, Inc. Immersion lens with magnetic shield for charged particle beam system
KR100572253B1 (ko) * 2000-08-14 2006-04-19 이리스 엘엘씨 리소그래피장치, 디바이스 제조방법 및 그것에 의하여제조된 디바이스
DE10044199B9 (de) * 2000-09-07 2005-07-28 Carl Zeiss Smt Ag Ablenkanordnung und Projektionssystem für geladene Teilchen
DE10109965A1 (de) 2001-03-01 2002-09-12 Zeiss Carl Teilchenoptische Linsenanordnung und Verfahren unter Einsatz einer solchen Linsenanordnung
DE10117025A1 (de) * 2001-04-05 2002-10-10 Zeiss Carl Teilchenoptische Vorrichtung,Beleuchtungsvorrichtung und Projektionssystem sowie Verfahren unter Verwendung derselben
JP2002343295A (ja) * 2001-05-21 2002-11-29 Canon Inc 電子線露光装置、縮小投影系及びデバイス製造方法
TW579536B (en) * 2001-07-02 2004-03-11 Zeiss Carl Semiconductor Mfg Examining system for the particle-optical imaging of an object, deflector for charged particles as well as method for the operation of the same
DE10156275B4 (de) * 2001-11-16 2006-08-03 Leo Elektronenmikroskopie Gmbh Detektoranordnung und Detektionsverfahren
DE10230929A1 (de) * 2002-07-09 2004-01-29 Leo Elektronenmikroskopie Gmbh Verfahren zum elektronenmikroskopischen Beobachten einer Halbleiteranordnung und Vorrichtung hierfür
DE10235455B9 (de) * 2002-08-02 2008-01-24 Leo Elektronenmikroskopie Gmbh Teilchenoptische Vorrichtung und Verfahren zum Betrieb derselben
DE10237141A1 (de) * 2002-08-13 2004-02-26 Leo Elektronenmikroskopie Gmbh Strahlführungssystem, Abbildungsverfahren und Elektronenmikroskopiesystem
US7528614B2 (en) 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
DE102004019834B4 (de) * 2004-04-23 2007-03-22 Vistec Electron Beam Gmbh Korrekturlinsen-System für ein Partikelstrahl-Projektionsgerät
JP6265643B2 (ja) * 2013-07-31 2018-01-24 株式会社日立ハイテクノロジーズ 電子ビーム装置
JP6554066B2 (ja) * 2016-05-31 2019-07-31 株式会社日立製作所 磁場計測用電子顕微鏡、及び磁場計測法
CZ309537B6 (cs) 2020-04-23 2023-03-29 Tescan Brno, S.R.O. Způsob zobrazení vzorku

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Publication number Priority date Publication date Assignee Title
GB646019A (en) * 1946-01-05 1950-11-15 Philips Nv Improvements in or relating to electron microscopes
DE1802450B1 (de) * 1968-09-02 1970-07-02 Siemens Ag Verfahren zur Scharfstellung eines korpuskularstrahloptischen Bildes
US3857041A (en) * 1969-07-03 1974-12-24 Texas Instruments Inc Electron beam patterning system for use in production of semiconductor devices
NL7100609A (cg-RX-API-DMAC7.html) * 1970-02-07 1971-08-10
US3715582A (en) * 1970-02-13 1973-02-06 Hitachi Ltd Method of and apparatus for attaining focusing following variation in magnification in electron microscope
NL7012671A (cg-RX-API-DMAC7.html) * 1970-08-27 1972-02-29
US3894271A (en) * 1973-08-31 1975-07-08 Ibm Method and apparatus for aligning electron beams
US3930181A (en) * 1973-12-28 1975-12-30 Ibm Lens and deflection unit arrangement for electron beam columns
US4000440A (en) * 1974-07-26 1976-12-28 International Business Machines Corporation Method and apparatus for controlling brightness and alignment of a beam of charged particles
US3984687A (en) * 1975-03-17 1976-10-05 International Business Machines Corporation Shielded magnetic lens and deflection yoke structure for electron beam column
CA1018628A (en) * 1975-07-18 1977-10-04 Northern Electric Company Limited Electrical connector
JPS5251871A (en) * 1975-10-23 1977-04-26 Rikagaku Kenkyusho Projecting method for charge particle beams
US4070597A (en) * 1976-04-22 1978-01-24 General Electric Company Multi-apertured single plate matrix lens
JPS52151568A (en) * 1976-06-11 1977-12-16 Jeol Ltd Electron beam exposure apparatus
JPS5472980A (en) * 1977-11-24 1979-06-11 Hitachi Ltd Electron-beam drawing unit
US4199689A (en) * 1977-12-21 1980-04-22 Tokyo Shibaura Denki Kabushiki Kaisha Electron beam exposing method and electron beam apparatus

Also Published As

Publication number Publication date
EP0051733A1 (en) 1982-05-19
US4376249A (en) 1983-03-08
DE3162439D1 (en) 1984-04-05
EP0051733B1 (en) 1984-02-29
JPS57105953A (en) 1982-07-01

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