JPS6331114B2 - - Google Patents

Info

Publication number
JPS6331114B2
JPS6331114B2 JP55180952A JP18095280A JPS6331114B2 JP S6331114 B2 JPS6331114 B2 JP S6331114B2 JP 55180952 A JP55180952 A JP 55180952A JP 18095280 A JP18095280 A JP 18095280A JP S6331114 B2 JPS6331114 B2 JP S6331114B2
Authority
JP
Japan
Prior art keywords
insulating film
layer
gate
conductor layer
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55180952A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57104264A (en
Inventor
Fujio Masuoka
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55180952A priority Critical patent/JPS57104264A/ja
Priority to US06/320,936 priority patent/US4531203A/en
Publication of JPS57104264A publication Critical patent/JPS57104264A/ja
Priority to US06/721,431 priority patent/US4612212A/en
Publication of JPS6331114B2 publication Critical patent/JPS6331114B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP55180952A 1980-12-20 1980-12-20 Semiconductor memory cell Granted JPS57104264A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55180952A JPS57104264A (en) 1980-12-20 1980-12-20 Semiconductor memory cell
US06/320,936 US4531203A (en) 1980-12-20 1981-11-13 Semiconductor memory device and method for manufacturing the same
US06/721,431 US4612212A (en) 1980-12-20 1985-04-09 Method for manufacturing E2 PROM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55180952A JPS57104264A (en) 1980-12-20 1980-12-20 Semiconductor memory cell

Publications (2)

Publication Number Publication Date
JPS57104264A JPS57104264A (en) 1982-06-29
JPS6331114B2 true JPS6331114B2 (enrdf_load_stackoverflow) 1988-06-22

Family

ID=16092139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55180952A Granted JPS57104264A (en) 1980-12-20 1980-12-20 Semiconductor memory cell

Country Status (1)

Country Link
JP (1) JPS57104264A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220121948A (ko) * 2021-02-25 2022-09-02 주식회사 에스오에스랩 센서를 이용한 보안 장치의 동작 방법
KR20220121947A (ko) * 2021-02-25 2022-09-02 주식회사 에스오에스랩 센서를 이용한 보안 장치의 동작 방법
KR102678598B1 (ko) * 2023-11-09 2024-06-27 주식회사 위쥬테크 라이다를 이용한 차량 감지 장치

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05270189A (ja) * 1992-03-26 1993-10-19 Matsushita Electric Works Ltd クリップ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220121948A (ko) * 2021-02-25 2022-09-02 주식회사 에스오에스랩 센서를 이용한 보안 장치의 동작 방법
KR20220121947A (ko) * 2021-02-25 2022-09-02 주식회사 에스오에스랩 센서를 이용한 보안 장치의 동작 방법
KR102678598B1 (ko) * 2023-11-09 2024-06-27 주식회사 위쥬테크 라이다를 이용한 차량 감지 장치

Also Published As

Publication number Publication date
JPS57104264A (en) 1982-06-29

Similar Documents

Publication Publication Date Title
US4612212A (en) Method for manufacturing E2 PROM
KR100271407B1 (ko) 불휘발성 반도체 메모리와 그 제조방법 및 사용 방법
US6940109B2 (en) High density 3d rail stack arrays and method of making
US4803529A (en) Electrically erasable and electrically programmable read only memory
EP0053878B1 (en) Semiconductor memory device
JPS6034199B2 (ja) 半導体記憶装置
JPH0864699A (ja) 不揮発性半導体記憶装置
US4437174A (en) Semiconductor memory device
JPH08125042A (ja) 不揮発性半導体記憶装置及びその製造方法
JP2967346B2 (ja) 不揮発性メモリ装置の製造方法
US5523969A (en) Electrically erasable programmable non-volatile semiconductor memory device and method for manufacturing the same
JPS6331114B2 (enrdf_load_stackoverflow)
JP2724150B2 (ja) 不揮発性半導体メモリ装置
JPS623994B2 (enrdf_load_stackoverflow)
JPS6331112B2 (enrdf_load_stackoverflow)
JPS6331113B2 (enrdf_load_stackoverflow)
JP3162472B2 (ja) 不揮発性半導体記憶装置
JPH0150116B2 (enrdf_load_stackoverflow)
JPS6152555B2 (enrdf_load_stackoverflow)
JPS6226596B2 (enrdf_load_stackoverflow)
JPS623992B2 (enrdf_load_stackoverflow)
JPS6226597B2 (enrdf_load_stackoverflow)
JPS623993B2 (enrdf_load_stackoverflow)
JPH06302830A (ja) 不揮発性記憶装置
JP3206106B2 (ja) 半導体記憶装置