JPS6331113B2 - - Google Patents

Info

Publication number
JPS6331113B2
JPS6331113B2 JP18095180A JP18095180A JPS6331113B2 JP S6331113 B2 JPS6331113 B2 JP S6331113B2 JP 18095180 A JP18095180 A JP 18095180A JP 18095180 A JP18095180 A JP 18095180A JP S6331113 B2 JPS6331113 B2 JP S6331113B2
Authority
JP
Japan
Prior art keywords
gate
erase
insulating film
memory cell
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18095180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57104263A (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP18095180A priority Critical patent/JPS57104263A/ja
Priority to EP81305349A priority patent/EP0052982B1/en
Priority to DE8181305349T priority patent/DE3175125D1/de
Priority to US06/321,322 priority patent/US4803529A/en
Publication of JPS57104263A publication Critical patent/JPS57104263A/ja
Priority to US07/193,079 priority patent/US4910565A/en
Publication of JPS6331113B2 publication Critical patent/JPS6331113B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP18095180A 1980-11-20 1980-12-20 Semiconductor memory storage Granted JPS57104263A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP18095180A JPS57104263A (en) 1980-12-20 1980-12-20 Semiconductor memory storage
EP81305349A EP0052982B1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
DE8181305349T DE3175125D1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
US06/321,322 US4803529A (en) 1980-11-20 1981-11-13 Electrically erasable and electrically programmable read only memory
US07/193,079 US4910565A (en) 1980-11-20 1988-05-12 Electrically erasable and electrically programmable read-only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18095180A JPS57104263A (en) 1980-12-20 1980-12-20 Semiconductor memory storage

Publications (2)

Publication Number Publication Date
JPS57104263A JPS57104263A (en) 1982-06-29
JPS6331113B2 true JPS6331113B2 (enrdf_load_stackoverflow) 1988-06-22

Family

ID=16092122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18095180A Granted JPS57104263A (en) 1980-11-20 1980-12-20 Semiconductor memory storage

Country Status (1)

Country Link
JP (1) JPS57104263A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0640588B2 (ja) * 1987-03-13 1994-05-25 株式会社東芝 半導体記憶装置
JPH0191395A (ja) * 1987-10-01 1989-04-11 Toshiba Corp 不揮発性半導体メモリ
US5436480A (en) * 1993-02-22 1995-07-25 Yu; Shih-Chiang Integrated circuit interconnection programmable and erasable by a plurality of intersecting control traces

Also Published As

Publication number Publication date
JPS57104263A (en) 1982-06-29

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