JPS6331096B2 - - Google Patents

Info

Publication number
JPS6331096B2
JPS6331096B2 JP57111500A JP11150082A JPS6331096B2 JP S6331096 B2 JPS6331096 B2 JP S6331096B2 JP 57111500 A JP57111500 A JP 57111500A JP 11150082 A JP11150082 A JP 11150082A JP S6331096 B2 JPS6331096 B2 JP S6331096B2
Authority
JP
Japan
Prior art keywords
wafer
semiconductor wafer
auxiliary heating
heating source
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57111500A
Other languages
English (en)
Japanese (ja)
Other versions
JPS593935A (ja
Inventor
Yoshiki Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP11150082A priority Critical patent/JPS593935A/ja
Priority to US06/445,492 priority patent/US4468259A/en
Publication of JPS593935A publication Critical patent/JPS593935A/ja
Publication of JPS6331096B2 publication Critical patent/JPS6331096B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP11150082A 1981-12-04 1982-06-30 半導体ウエハ−を光照射で加熱する方法 Granted JPS593935A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11150082A JPS593935A (ja) 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法
US06/445,492 US4468259A (en) 1981-12-04 1982-11-30 Uniform wafer heating by controlling light source and circumferential heating of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11150082A JPS593935A (ja) 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法

Publications (2)

Publication Number Publication Date
JPS593935A JPS593935A (ja) 1984-01-10
JPS6331096B2 true JPS6331096B2 (enrdf_load_stackoverflow) 1988-06-22

Family

ID=14562866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11150082A Granted JPS593935A (ja) 1981-12-04 1982-06-30 半導体ウエハ−を光照射で加熱する方法

Country Status (1)

Country Link
JP (1) JPS593935A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167335U (ja) * 1984-04-14 1985-11-06 大日本スクリ−ン製造株式会社 熱処理装置
JPH02291118A (ja) * 1988-12-30 1990-11-30 Ag Processing Technol Inc ウェハーの表面及び周囲加熱のための放射熱源を利用したウェハー均一加熱方法及びその装置
US5310339A (en) * 1990-09-26 1994-05-10 Tokyo Electron Limited Heat treatment apparatus having a wafer boat
CN114378751B (zh) 2020-10-20 2022-11-01 长鑫存储技术有限公司 晶圆用承载环的安装夹具

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175826A (ja) * 1981-12-04 1983-10-15 Ushio Inc 半導体を光照射で加熱する方法

Also Published As

Publication number Publication date
JPS593935A (ja) 1984-01-10

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