JPS6330785B2 - - Google Patents

Info

Publication number
JPS6330785B2
JPS6330785B2 JP62012333A JP1233387A JPS6330785B2 JP S6330785 B2 JPS6330785 B2 JP S6330785B2 JP 62012333 A JP62012333 A JP 62012333A JP 1233387 A JP1233387 A JP 1233387A JP S6330785 B2 JPS6330785 B2 JP S6330785B2
Authority
JP
Japan
Prior art keywords
resin
film
semiconductor substrate
pii
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP62012333A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62181453A (ja
Inventor
Tatsumi Shirasu
Yasunobu Osa
Tokio Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62012333A priority Critical patent/JPS62181453A/ja
Publication of JPS62181453A publication Critical patent/JPS62181453A/ja
Publication of JPS6330785B2 publication Critical patent/JPS6330785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/25—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons against alpha rays, e.g. for outer space applications
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Semiconductor Memories (AREA)
JP62012333A 1987-01-23 1987-01-23 半導体記憶装置 Granted JPS62181453A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62012333A JPS62181453A (ja) 1987-01-23 1987-01-23 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62012333A JPS62181453A (ja) 1987-01-23 1987-01-23 半導体記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3548079A Division JPS55128851A (en) 1979-03-28 1979-03-28 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS62181453A JPS62181453A (ja) 1987-08-08
JPS6330785B2 true JPS6330785B2 (enFirst) 1988-06-21

Family

ID=11802377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62012333A Granted JPS62181453A (ja) 1987-01-23 1987-01-23 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS62181453A (enFirst)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100234824B1 (ko) * 1991-03-20 1999-12-15 윌리엄 비. 켐플러 반도체 장치

Also Published As

Publication number Publication date
JPS62181453A (ja) 1987-08-08

Similar Documents

Publication Publication Date Title
JPH0546101B2 (enFirst)
KR940008373B1 (ko) 반도체 장치의 제조방법
Mukai et al. Planar multilevel interconnection technology employing a polyimide
JPS6330785B2 (enFirst)
JPS6330786B2 (enFirst)
JPH0544189B2 (enFirst)
JPS6136709B2 (enFirst)
US4702796A (en) Method for fabricting a semiconductor device
Milek Silicon nitride for microelectronic applications: part 2 applications and devices
JPS61241932A (ja) 半導体装置およびその製造方法
JPS627700B2 (enFirst)
JPH06350083A (ja) セラミックス封止型半導体装置
KR100260551B1 (ko) 소프트 에러율을 감소시킨 반도체 장치 및 그 제조방법
JPS6314477A (ja) 半導体装置
JPS58116755A (ja) 半導体装置
JPS6257244A (ja) 半導体装置
JPS6257095B2 (enFirst)
JPH0298898A (ja) ダイオード読出専用メモリ装置
JPS6150348A (ja) 半導体装置の製造方法
JP3334760B2 (ja) 半導体装置の製造方法
JPH04291954A (ja) 半導体記憶装置
JPS6212151A (ja) 半導体装置
JPH0584673B2 (enFirst)
JPS6244690B2 (enFirst)
JPS6150349A (ja) 半導体装置の製造方法