JPS63303896A - 炭化珪素単結晶膜の製造方法 - Google Patents

炭化珪素単結晶膜の製造方法

Info

Publication number
JPS63303896A
JPS63303896A JP13538287A JP13538287A JPS63303896A JP S63303896 A JPS63303896 A JP S63303896A JP 13538287 A JP13538287 A JP 13538287A JP 13538287 A JP13538287 A JP 13538287A JP S63303896 A JPS63303896 A JP S63303896A
Authority
JP
Japan
Prior art keywords
film
single crystal
sic
substrate
tic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13538287A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0463840B2 (cg-RX-API-DMAC7.html
Inventor
Yoshihisa Fujii
藤井　良久
Akira Suzuki
彰 鈴木
Masaki Furukawa
勝紀 古川
Kenji Nakanishi
健司 中西
Mitsuhiro Shigeta
光浩 繁田
Akitsugu Hatano
晃継 波多野
Atsuko Uemoto
植本　敦子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP13538287A priority Critical patent/JPS63303896A/ja
Publication of JPS63303896A publication Critical patent/JPS63303896A/ja
Publication of JPH0463840B2 publication Critical patent/JPH0463840B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP13538287A 1987-05-30 1987-05-30 炭化珪素単結晶膜の製造方法 Granted JPS63303896A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13538287A JPS63303896A (ja) 1987-05-30 1987-05-30 炭化珪素単結晶膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13538287A JPS63303896A (ja) 1987-05-30 1987-05-30 炭化珪素単結晶膜の製造方法

Publications (2)

Publication Number Publication Date
JPS63303896A true JPS63303896A (ja) 1988-12-12
JPH0463840B2 JPH0463840B2 (cg-RX-API-DMAC7.html) 1992-10-13

Family

ID=15150400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13538287A Granted JPS63303896A (ja) 1987-05-30 1987-05-30 炭化珪素単結晶膜の製造方法

Country Status (1)

Country Link
JP (1) JPS63303896A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010035A (en) * 1985-05-23 1991-04-23 The Regents Of The University Of California Wafer base for silicon carbide semiconductor device
WO2016104291A1 (ja) * 2014-12-22 2016-06-30 信越化学工業株式会社 複合基板、ナノカーボン膜の作製方法及びナノカーボン膜

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010035A (en) * 1985-05-23 1991-04-23 The Regents Of The University Of California Wafer base for silicon carbide semiconductor device
WO2016104291A1 (ja) * 2014-12-22 2016-06-30 信越化学工業株式会社 複合基板、ナノカーボン膜の作製方法及びナノカーボン膜
JPWO2016104291A1 (ja) * 2014-12-22 2017-08-31 信越化学工業株式会社 複合基板、ナノカーボン膜の作製方法及びナノカーボン膜
US10781104B2 (en) 2014-12-22 2020-09-22 Shin-Etsu Chemical Co., Ltd. Composite substrate, method for forming nanocarbon film, and nanocarbon film

Also Published As

Publication number Publication date
JPH0463840B2 (cg-RX-API-DMAC7.html) 1992-10-13

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