JPS6329966U - - Google Patents
Info
- Publication number
- JPS6329966U JPS6329966U JP1986122700U JP12270086U JPS6329966U JP S6329966 U JPS6329966 U JP S6329966U JP 1986122700 U JP1986122700 U JP 1986122700U JP 12270086 U JP12270086 U JP 12270086U JP S6329966 U JPS6329966 U JP S6329966U
- Authority
- JP
- Japan
- Prior art keywords
- thermomodule
- substrate
- heat exchange
- silicon substrate
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
第１図は、本発明実施例のサーモモジユールを
示す図、第２図は、同装置の要部拡大断面を示す
図、第３図は従来例のサーモモジユールを示す図
である。
１，１１……第１の熱交換基板、２，１２……
第２の熱交換基板、３，１３……ＰＮ素子対、３
ａ，１３ａ……Ｐ型熱電素子、３ｂ，１３ｂ……
Ｎ型熱電素子、１４……第１の電極、１５……第
２の電極、４……（高温側接合用）電極パターン
、５……（低温側接合用）電極パターン、６……
半田層、７……第１の電極リード、８……第２の
電極リード、２ａ……シリコン基板、２ｂ……酸
化シリコン膜。
FIG. 1 is a diagram showing a thermo module according to an embodiment of the present invention, FIG. 2 is a diagram showing an enlarged cross-section of a main part of the same device, and FIG. 3 is a diagram showing a conventional thermo module. 1, 11...first heat exchange board, 2, 12...
Second heat exchange board, 3 , 13...PN element pair, 3
a, 13a... P-type thermoelectric element, 3b, 13b...
N-type thermoelectric element, 14...first electrode, 15...second electrode, 4...(for high temperature side bonding) electrode pattern, 5...(for low temperature side bonding) electrode pattern, 6......
Solder layer, 7...first electrode lead, 8...second electrode lead, 2a...silicon substrate, 2b...silicon oxide film.
Claims (1)
つの熱電素子対を配設したサーモモジユールにお
いて、 前記熱交換基板は表面が絶縁膜で被覆されたシ
リコン基板で構成されていることを特徴とするサ
ーモモジユール。 (2) 前記シリコン基板は多結晶シリコン基板で
あることを特徴とする実用新案登録請求の範囲第
(1)項記載のサーモモジユール。 (3) 前記絶縁膜は酸化シリコン膜であることを
特徴とする実用新案登録請求の範囲第(1)項記載
のサーモモジユール。 (4) 前記電極は、前記熱交換基板の酸化シリコ
ン膜表面に形成された導体パターンであることを
特徴とする実用新案登録請求の範囲第(3)項記載
のサーモモジユール。[Claims for Utility Model Registration] (1) At least one
1. A thermomodule in which two thermoelectric element pairs are arranged, wherein the heat exchange substrate is composed of a silicon substrate whose surface is covered with an insulating film. (2) Utility model registration claim No. 1, characterized in that the silicon substrate is a polycrystalline silicon substrate.
Thermomodule described in (1). (3) The thermomodule according to claim 1, wherein the insulating film is a silicon oxide film. (4) The thermomodule according to claim (3), wherein the electrode is a conductive pattern formed on the surface of the silicon oxide film of the heat exchange substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986122700U JPS6329966U (en) | 1986-08-08 | 1986-08-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986122700U JPS6329966U (en) | 1986-08-08 | 1986-08-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6329966U true JPS6329966U (en) | 1988-02-27 |
Family
ID=31013138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986122700U Pending JPS6329966U (en) | 1986-08-08 | 1986-08-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6329966U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991018422A1 (en) * | 1990-05-14 | 1991-11-28 | Kabushiki Kaisha Komatsu Seisakusho | Method of manufacturing thermoelectric device |
-
1986
- 1986-08-08 JP JP1986122700U patent/JPS6329966U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991018422A1 (en) * | 1990-05-14 | 1991-11-28 | Kabushiki Kaisha Komatsu Seisakusho | Method of manufacturing thermoelectric device |
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