JPS6328503B2 - - Google Patents
Info
- Publication number
- JPS6328503B2 JPS6328503B2 JP57042103A JP4210382A JPS6328503B2 JP S6328503 B2 JPS6328503 B2 JP S6328503B2 JP 57042103 A JP57042103 A JP 57042103A JP 4210382 A JP4210382 A JP 4210382A JP S6328503 B2 JPS6328503 B2 JP S6328503B2
- Authority
- JP
- Japan
- Prior art keywords
- phototransistor
- transistor
- impurity diffusion
- region
- diffusion region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57042103A JPS58159384A (ja) | 1982-03-17 | 1982-03-17 | ダ−リントンフオトトランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57042103A JPS58159384A (ja) | 1982-03-17 | 1982-03-17 | ダ−リントンフオトトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58159384A JPS58159384A (ja) | 1983-09-21 |
JPS6328503B2 true JPS6328503B2 (ru) | 1988-06-08 |
Family
ID=12626638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57042103A Granted JPS58159384A (ja) | 1982-03-17 | 1982-03-17 | ダ−リントンフオトトランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58159384A (ru) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2596957B2 (ja) * | 1988-01-08 | 1997-04-02 | シャープ株式会社 | 光結合素子 |
US5969399A (en) * | 1998-05-19 | 1999-10-19 | Hewlett-Packard Company | High gain current mode photo-sensor |
KR20020084428A (ko) * | 2001-05-02 | 2002-11-09 | 송정근 | 이종접합 광트랜지스터와 이종접합 쌍극자 트랜지스터로구성된 광전소자 및 그 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5186989A (ru) * | 1975-01-29 | 1976-07-30 | Nippon Electric Co | |
JPS5310434A (en) * | 1976-07-16 | 1978-01-30 | Fujitsu Ltd | Transfer medium |
-
1982
- 1982-03-17 JP JP57042103A patent/JPS58159384A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5186989A (ru) * | 1975-01-29 | 1976-07-30 | Nippon Electric Co | |
JPS5310434A (en) * | 1976-07-16 | 1978-01-30 | Fujitsu Ltd | Transfer medium |
Also Published As
Publication number | Publication date |
---|---|
JPS58159384A (ja) | 1983-09-21 |
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