JPS5672584A - Solid-state image pickup device - Google Patents

Solid-state image pickup device

Info

Publication number
JPS5672584A
JPS5672584A JP14937779A JP14937779A JPS5672584A JP S5672584 A JPS5672584 A JP S5672584A JP 14937779 A JP14937779 A JP 14937779A JP 14937779 A JP14937779 A JP 14937779A JP S5672584 A JPS5672584 A JP S5672584A
Authority
JP
Japan
Prior art keywords
impurity layer
layer
parasitic transistor
current
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14937779A
Other languages
Japanese (ja)
Inventor
Makoto Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14937779A priority Critical patent/JPS5672584A/en
Publication of JPS5672584A publication Critical patent/JPS5672584A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Abstract

PURPOSE:To reduce false signals and blooming while avoiding an influence of a parasitic transistor by constituting p-n junction by a semiconductor substrate and the 1st impurity layer and by providing the 2nd impurity layer, connected to a DC power source, in the 1st impurity layer. CONSTITUTION:In impurity layer 505. impurity layer 504 is further provided and the junction between layers 505 and 504 is made by diode 608. When intense light arrives, the potential of point (a) is held at EC by current ic flowing from layer 504 to layer 505. Consequently, any base current of the parasitic transistor composed of layers 505 and 507 and silicon substrate 506 does not flow and no current flows from impurity layer 507 to impurity layer 505 undoubtedly, so that any false signal will be generated. Additionally, although layers 504 and 505 and the substrate form parasitic transistor Trn, the effect of parasitic Tr is removed without a change since the base potential is reversely biased and the current amplification factor of parasitic transistor Trn is held low.
JP14937779A 1979-11-16 1979-11-16 Solid-state image pickup device Pending JPS5672584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14937779A JPS5672584A (en) 1979-11-16 1979-11-16 Solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14937779A JPS5672584A (en) 1979-11-16 1979-11-16 Solid-state image pickup device

Publications (1)

Publication Number Publication Date
JPS5672584A true JPS5672584A (en) 1981-06-16

Family

ID=15473796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14937779A Pending JPS5672584A (en) 1979-11-16 1979-11-16 Solid-state image pickup device

Country Status (1)

Country Link
JP (1) JPS5672584A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60164354A (en) * 1984-02-06 1985-08-27 Victor Co Of Japan Ltd Solid state image pick-up device
JP2016033977A (en) * 2014-07-31 2016-03-10 キヤノン株式会社 Photoelectric conversion device and imaging system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60164354A (en) * 1984-02-06 1985-08-27 Victor Co Of Japan Ltd Solid state image pick-up device
JPH043112B2 (en) * 1984-02-06 1992-01-22
JP2016033977A (en) * 2014-07-31 2016-03-10 キヤノン株式会社 Photoelectric conversion device and imaging system

Similar Documents

Publication Publication Date Title
JPH0173953U (en)
JPS5672584A (en) Solid-state image pickup device
JPS5361982A (en) Semiconductor integrated circuit device
JPS5499580A (en) Semiconductor integrated circuit device
JPS56108255A (en) Semiconductor integrated circuit
JPS5522871A (en) Semiconductor light detector
JPS55107261A (en) Semiconductor integrated circuit device
JPS5793567A (en) Integrated photodetecting circuit device
JPS6328503B2 (en)
JPS5479575A (en) Semiconductor integrated-circuit device
JP2661629B2 (en) Integrated photo detector
JPS54152467A (en) Semiconductor device
JPS55158663A (en) Transistor
JPS52103982A (en) Composite semiconductor device
JPS5562762A (en) Semiconductor device
JPS5517461A (en) Wavelength detector using photo semiconductor device
JPS54107280A (en) Semiconductor integrated circuit unit
JPS5552240A (en) Semiconductor integrated circuit device
JPS5648167A (en) Semiconductor device
JPS5466785A (en) Semiconductor integrated circuit device
JPS5715466A (en) Semiconductor device
JPS55115361A (en) Semiconductor device
JPS55166967A (en) Junction type field effect transistor
JPS54147785A (en) Semiconductor integrated circuit device
JPS54160185A (en) Semiconductor integrated circuit device