JPS6328503B2 - - Google Patents

Info

Publication number
JPS6328503B2
JPS6328503B2 JP57042103A JP4210382A JPS6328503B2 JP S6328503 B2 JPS6328503 B2 JP S6328503B2 JP 57042103 A JP57042103 A JP 57042103A JP 4210382 A JP4210382 A JP 4210382A JP S6328503 B2 JPS6328503 B2 JP S6328503B2
Authority
JP
Japan
Prior art keywords
phototransistor
transistor
impurity diffusion
region
diffusion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57042103A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58159384A (ja
Inventor
Toshuki Nagashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57042103A priority Critical patent/JPS58159384A/ja
Publication of JPS58159384A publication Critical patent/JPS58159384A/ja
Publication of JPS6328503B2 publication Critical patent/JPS6328503B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers

Landscapes

  • Light Receiving Elements (AREA)
JP57042103A 1982-03-17 1982-03-17 ダ−リントンフオトトランジスタ Granted JPS58159384A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57042103A JPS58159384A (ja) 1982-03-17 1982-03-17 ダ−リントンフオトトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57042103A JPS58159384A (ja) 1982-03-17 1982-03-17 ダ−リントンフオトトランジスタ

Publications (2)

Publication Number Publication Date
JPS58159384A JPS58159384A (ja) 1983-09-21
JPS6328503B2 true JPS6328503B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-06-08

Family

ID=12626638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57042103A Granted JPS58159384A (ja) 1982-03-17 1982-03-17 ダ−リントンフオトトランジスタ

Country Status (1)

Country Link
JP (1) JPS58159384A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2596957B2 (ja) * 1988-01-08 1997-04-02 シャープ株式会社 光結合素子
US5969399A (en) * 1998-05-19 1999-10-19 Hewlett-Packard Company High gain current mode photo-sensor
KR20020084428A (ko) * 2001-05-02 2002-11-09 송정근 이종접합 광트랜지스터와 이종접합 쌍극자 트랜지스터로구성된 광전소자 및 그 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186989A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1975-01-29 1976-07-30 Nippon Electric Co
JPS5310434A (en) * 1976-07-16 1978-01-30 Fujitsu Ltd Transfer medium

Also Published As

Publication number Publication date
JPS58159384A (ja) 1983-09-21

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