JPS63283062A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS63283062A
JPS63283062A JP63057379A JP5737988A JPS63283062A JP S63283062 A JPS63283062 A JP S63283062A JP 63057379 A JP63057379 A JP 63057379A JP 5737988 A JP5737988 A JP 5737988A JP S63283062 A JPS63283062 A JP S63283062A
Authority
JP
Japan
Prior art keywords
impurity density
region
base
high impurity
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63057379A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0347733B2 (enrdf_load_html_response
Inventor
Junichi Nishizawa
潤一 西澤
Kentaro Nakamura
憲太郎 中村
Takashi Kiregawa
喜連川　隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Semiconductor Research Foundation
Original Assignee
Mitsubishi Electric Corp
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Semiconductor Research Foundation filed Critical Mitsubishi Electric Corp
Priority to JP63057379A priority Critical patent/JPS63283062A/ja
Publication of JPS63283062A publication Critical patent/JPS63283062A/ja
Publication of JPH0347733B2 publication Critical patent/JPH0347733B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP63057379A 1988-03-12 1988-03-12 半導体装置の製造方法 Granted JPS63283062A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63057379A JPS63283062A (ja) 1988-03-12 1988-03-12 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63057379A JPS63283062A (ja) 1988-03-12 1988-03-12 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP56089818A Division JPS5743475A (en) 1981-06-11 1981-06-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS63283062A true JPS63283062A (ja) 1988-11-18
JPH0347733B2 JPH0347733B2 (enrdf_load_html_response) 1991-07-22

Family

ID=13053966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63057379A Granted JPS63283062A (ja) 1988-03-12 1988-03-12 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS63283062A (enrdf_load_html_response)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943583A (enrdf_load_html_response) * 1972-08-30 1974-04-24
JPS5020675A (enrdf_load_html_response) * 1973-06-22 1975-03-05
JPS5026480A (enrdf_load_html_response) * 1973-07-09 1975-03-19
JPS5222885A (en) * 1975-08-14 1977-02-21 Matsushita Electronics Corp Transistor and manufacturing system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943583A (enrdf_load_html_response) * 1972-08-30 1974-04-24
JPS5020675A (enrdf_load_html_response) * 1973-06-22 1975-03-05
JPS5026480A (enrdf_load_html_response) * 1973-07-09 1975-03-19
JPS5222885A (en) * 1975-08-14 1977-02-21 Matsushita Electronics Corp Transistor and manufacturing system

Also Published As

Publication number Publication date
JPH0347733B2 (enrdf_load_html_response) 1991-07-22

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