JPS63283062A - 半導体装置の製造方法 - Google Patents

Info

Publication number

JPS63283062A

JPS63283062A JP63057379A JP5737988A JPS63283062A JP S63283062 A JPS63283062 A JP S63283062A JP 63057379 A JP63057379 A JP 63057379A JP 5737988 A JP5737988 A JP 5737988A JP S63283062 A JPS63283062 A JP S63283062A

Authority

JP

Japan

Prior art keywords

impurity density

region

base

high impurity

layer

Prior art date

1988-03-12

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

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• 239000004065 semiconductor Substances 0.000 title claims description 17
• 238000004519 manufacturing process Methods 0.000 title claims description 11
• 239000012535 impurity Substances 0.000 claims description 46
• 239000000758 substrate Substances 0.000 claims description 19
• 238000000034 method Methods 0.000 claims description 15
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
• 229910052710 silicon Inorganic materials 0.000 description 8
• 239000010703 silicon Substances 0.000 description 8
• 230000000694 effects Effects 0.000 description 5
• 239000000969 carrier Substances 0.000 description 4
• 238000009792 diffusion process Methods 0.000 description 3
• 238000005530 etching Methods 0.000 description 3
• 229910052751 metal Inorganic materials 0.000 description 3
• 239000002184 metal Substances 0.000 description 3
• 229910052785 arsenic Inorganic materials 0.000 description 2
• RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
• 230000000903 blocking effect Effects 0.000 description 2
• 230000015556 catabolic process Effects 0.000 description 2
• 238000005468 ion implantation Methods 0.000 description 2
• 239000000463 material Substances 0.000 description 2
• JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
• 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
• OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
• ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
• 229910052782 aluminium Inorganic materials 0.000 description 1
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 150000001875 compounds Chemical class 0.000 description 1
• 229910052732 germanium Inorganic materials 0.000 description 1
• GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
• 238000010438 heat treatment Methods 0.000 description 1
• 229910052738 indium Inorganic materials 0.000 description 1
• APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
• 229910052760 oxygen Inorganic materials 0.000 description 1
• 239000001301 oxygen Substances 0.000 description 1
• 229910052698 phosphorus Inorganic materials 0.000 description 1
• 239000011574 phosphorus Substances 0.000 description 1
• 229910052700 potassium Inorganic materials 0.000 description 1
• 239000011591 potassium Substances 0.000 description 1
• 238000003892 spreading Methods 0.000 description 1
• 230000003068 static effect Effects 0.000 description 1
• 230000007704 transition Effects 0.000 description 1
• 230000002747 voluntary effect Effects 0.000 description 1