JPS6327870B2 - - Google Patents

Info

Publication number
JPS6327870B2
JPS6327870B2 JP54106373A JP10637379A JPS6327870B2 JP S6327870 B2 JPS6327870 B2 JP S6327870B2 JP 54106373 A JP54106373 A JP 54106373A JP 10637379 A JP10637379 A JP 10637379A JP S6327870 B2 JPS6327870 B2 JP S6327870B2
Authority
JP
Japan
Prior art keywords
layer
cdte
crucible
evaporation source
znte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54106373A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5630772A (en
Inventor
Katsumi Itagaki
Junta Yamamoto
Tetsuo Kamikado
Koichi Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP10637379A priority Critical patent/JPS5630772A/ja
Publication of JPS5630772A publication Critical patent/JPS5630772A/ja
Publication of JPS6327870B2 publication Critical patent/JPS6327870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H10P14/2922—
    • H10P14/3428—
    • H10P14/3431—
    • H10P14/3432—

Landscapes

  • Light Receiving Elements (AREA)
JP10637379A 1979-08-20 1979-08-20 Manufacture of photoconductive element Granted JPS5630772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10637379A JPS5630772A (en) 1979-08-20 1979-08-20 Manufacture of photoconductive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10637379A JPS5630772A (en) 1979-08-20 1979-08-20 Manufacture of photoconductive element

Publications (2)

Publication Number Publication Date
JPS5630772A JPS5630772A (en) 1981-03-27
JPS6327870B2 true JPS6327870B2 (OSRAM) 1988-06-06

Family

ID=14431910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10637379A Granted JPS5630772A (en) 1979-08-20 1979-08-20 Manufacture of photoconductive element

Country Status (1)

Country Link
JP (1) JPS5630772A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723227B2 (ja) * 1986-09-26 1998-03-09 株式会社東芝 半導体発光素子の製造方法

Also Published As

Publication number Publication date
JPS5630772A (en) 1981-03-27

Similar Documents

Publication Publication Date Title
US3698946A (en) Transparent conductive coating and process therefor
JP3831592B2 (ja) 化合物半導体薄膜の製造方法
US3356529A (en) Method for the deposition of an electro-conductive transparent indium oxide coating
US4376795A (en) Method of producing image sensor
JPS6327870B2 (OSRAM)
US2431923A (en) Photographic record and method of forming same
JP3431388B2 (ja) カルコパイライト構造半導体薄膜の製造方法
US4298671A (en) Tellurium layer allows vapor deposition of crystalline selenium thereon in making double layer electrophotographic record material
JPS6115964A (ja) 真空蒸着装置
JPH055895B2 (OSRAM)
US4343883A (en) Method for producing an electrophotographic recording material having dual layer of amorphous and crystallized Se
JPS58133374A (ja) 真空蒸着多層膜形成装置
JPH08111425A (ja) カルコパイライト構造半導体薄膜の製造方法
US3985918A (en) Method for manufacturing a target for an image pickup tube
JP4058122B2 (ja) 光学素子用誘電体多層膜の成膜装置
KR950014352A (ko) 진공증착 칼라 스테인레스 강판의 제조방법
JPS6130029B2 (OSRAM)
JPS5852476A (ja) 真空蒸着法
JPS5739172A (en) Apparatus for preparing thin film
JPS631747B2 (OSRAM)
JPS5837952Y2 (ja) 真空蒸着装置
JPH0219457A (ja) 真空蒸着用蒸発源
JP2583295Y2 (ja) 真空蒸着装置
JPH07116591B2 (ja) 不透明薄膜の製造方法
SU828159A1 (ru) Способ изготовлени бипол рногоэлЕКТРОфОТОгРАфичЕСКОгО НОСиТЕл изОбРАжЕНи