JPS63273330A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS63273330A
JPS63273330A JP10832687A JP10832687A JPS63273330A JP S63273330 A JPS63273330 A JP S63273330A JP 10832687 A JP10832687 A JP 10832687A JP 10832687 A JP10832687 A JP 10832687A JP S63273330 A JPS63273330 A JP S63273330A
Authority
JP
Japan
Prior art keywords
circuit
wirings
pads
probe
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10832687A
Other languages
Japanese (ja)
Other versions
JPH0577333B2 (en
Inventor
Katsu Sanada
真田 克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP10832687A priority Critical patent/JPS63273330A/en
Publication of JPS63273330A publication Critical patent/JPS63273330A/en
Publication of JPH0577333B2 publication Critical patent/JPH0577333B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square

Abstract

PURPOSE:To perform the failure analysis while preventing the destruction of the fine internal circuit wirings by the probe needles, the offset of the probe needles and the short circuit by contact with the adjoining wirings by providing lead wirings intersecting the internal circuit wirings through an insulating film, and small pads to be connected to the lead wirings. CONSTITUTION:On a semiconductor substrate 1, an internal circuit 2 is constituted by element regions 3a-3c and circuit wirings 5a-5d connected to the element electrodes 4a-4h thereof, and a plurality of bonding pads 6 are provided which are connected to the above predetermined circuit wirings to perform the transmission of the signal with external circuits and the supply of power. On the circuit 2, lead wirings 7a-7d intersecting the wirings 5a-5d through an insulating film are formed, and in the neighborhood of the pads 6, there are formed small pads 8a-8d which are respectively connected to the wirings 7a-7d and have an area smaller than the pads 6. And with the needles 9 of a testing equipment brought into contact with the pads 8a-8d, respectively, the signal transmission with the circuit 2 is performed to determine the operating condition of the circuit 2.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特に微細な回路配線を有す
る半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device having fine circuit wiring.

〔従来の技術〕[Conventional technology]

従来、この種の半導体装置は、半導体基板上に形成され
た複数の素子領域と、これら素子領域の各素子電極と接
続された複数の回路配線とを有する内部回路と、この内
部回路の所定の回路配線と接続して外部回路との信号の
伝達、電源の供給等を行うボンディングパッドとを備え
、故障解析などの時には、試験装置の探針を微細な回路
配線に接触させて信号の伝達を行い内部回路の動作状態
を確認していた。
Conventionally, this type of semiconductor device has an internal circuit including a plurality of element regions formed on a semiconductor substrate, a plurality of circuit wirings connected to each element electrode of these element regions, and a predetermined circuit of this internal circuit. It is equipped with a bonding pad that connects to circuit wiring to transmit signals to external circuits, supply power, etc. When performing failure analysis, etc., the probe of the test equipment can be brought into contact with minute circuit wiring to transmit signals. and checked the operating status of the internal circuits.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の半導体装置は、故障解析の時などには、
試験装置の探針を微細な回路配線に接触させて内部回路
の動作状態を確認する構成となっているので、試験装置
の探針の針圧による応力のために微細な回路配線が断線
したり、試験中の振動や作業者の探針への接触等により
探針がずれたり、゛またそのために隣接した回路配線と
短絡したりするという欠点があった。
In the conventional semiconductor device described above, during failure analysis, etc.
Since the probe of the test equipment is configured to touch fine circuit wiring to check the operating status of the internal circuit, there is no possibility that fine circuit wiring may break due to the stress caused by the pressure of the probe of the test equipment. However, there were disadvantages in that the probe could be displaced due to vibrations during testing or contact with the probe by an operator, and this could cause short circuits with adjacent circuit wiring.

さらに、密集した領域において複数の探針を回路配線に
接触させることは困難であるという欠点があった。
Furthermore, there is a drawback in that it is difficult to bring a plurality of probes into contact with circuit wiring in a dense area.

本発明の目的は、密集した領域であっても、回路配線の
断線や探針のずれ、隣接配線との短絡などを防止するこ
とができ、容易に故障解析等ができる半導体装置を提供
することにある。
An object of the present invention is to provide a semiconductor device that can prevent disconnection of circuit wiring, displacement of a probe, short circuit with adjacent wiring, etc. even in a dense area, and allows easy failure analysis. It is in.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の半導体装置は、半導体基板上に形成された複数
の素子領域と、これら素子領域の各素子電極と接続され
た複数の回路配線とを含む内部回路と、この内部回路の
所定の回路配線と接続して外部回路との信号の伝達を行
う複数のボンディングパッドと、前記複数の回路配線の
うちの特定の回路配線と絶8!膜を介して交差する複数
の引出配線と、これら各引出配線とそれぞれ接続し面積
が前記ボンディングパッドより小さく試験装置の探針を
接触させるための小パッドとを有している。
A semiconductor device of the present invention includes an internal circuit including a plurality of element regions formed on a semiconductor substrate, a plurality of circuit wirings connected to each element electrode of these element regions, and a predetermined circuit wiring of this internal circuit. A plurality of bonding pads are connected to a plurality of bonding pads for transmitting signals with an external circuit, and a specific circuit wiring among the plurality of circuit wirings is disconnected from 8! It has a plurality of lead wires that intersect with each other through the film, and small pads that are connected to each of these lead wires and have a smaller area than the bonding pad and are used to contact the probe of the test device.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例を示す半導体チップの配置図
である。
FIG. 1 is a layout diagram of a semiconductor chip showing an embodiment of the present invention.

半導体基板上上には、素子領域3a〜3cと、これら素
子領域3a〜3cの素子電極4a〜4bと接続する回路
配線5a〜5dとを含んで内部回路2が構成され、この
内部回路2の所定の回路配線と接続して外部回路との信
号の伝達や電源の供給等を行う複数のボンディングパッ
ド6が形成されている。
On the semiconductor substrate, an internal circuit 2 is configured including element regions 3a to 3c and circuit wirings 5a to 5d that connect to element electrodes 4a to 4b of these element regions 3a to 3c. A plurality of bonding pads 6 are formed which are connected to predetermined circuit wiring to transmit signals to external circuits, supply power, and the like.

内部回路2上には、絶縁膜を介して回路配線5a〜5d
と交差する引出配線7a〜7dが形成され、また、ボン
ディングパッド6の近くには、引出配線7a〜7dとそ
れぞれ接続し面積がこれらボンディングパッド6より小
さい、試験装置の探針を接触させるための小パッド8a
〜8dが形成されている。
Circuit wirings 5a to 5d are provided on the internal circuit 2 via an insulating film.
Lead wires 7a to 7d intersecting with the bonding pads 6 are formed near the bonding pad 6, and are connected to the lead wires 7a to 7d, respectively, and have a smaller area than the bonding pads 6, and are used for contacting the probe of the test device. Small pad 8a
~8d is formed.

次に、この実施例の故障解析方法について説明する。Next, the failure analysis method of this embodiment will be explained.

第2図はこの実施例の故障解析方法を説明するための半
導体チップ及び試験装置の要部平面図である。
FIG. 2 is a plan view of the main parts of the semiconductor chip and test equipment for explaining the failure analysis method of this embodiment.

まず、第2図示されたχ印の部分、即ち回路配線5a〜
5dと引出配線7a〜7dとの交差部を探針等でやや強
く押して絶縁膜を破壊し、回路配線5a〜5dと引出配
線7a〜7dとをそれぞれ短絡させ接続する。
First, the part marked χ shown in the second diagram, that is, the circuit wiring 5a to
5d and the lead wires 7a to 7d are pressed somewhat strongly with a probe or the like to break the insulating film, thereby short-circuiting and connecting the circuit wires 5a to 5d and the lead wires 7a to 7d, respectively.

そして試験装置の探針9を小パッド8a〜8dにそれぞ
れ接触させ、試験装置と内部回路2との間の信号の伝達
を行い、内部回路2の動作状態を確認する構成となって
いる。
The probe 9 of the test device is brought into contact with each of the small pads 8a to 8d to transmit signals between the test device and the internal circuit 2, thereby confirming the operating state of the internal circuit 2.

第3図は絶縁膜を破壊して回路配線5a〜5dと引出配
線7a〜7dとを接続したときの素子領域3aを中心と
した回路図の一例である。素子領域3aとして3人力の
NAND回路の場合が示されている。
FIG. 3 is an example of a circuit diagram centered on the element region 3a when the insulating film is destroyed and the circuit wires 5a to 5d and the lead wires 7a to 7d are connected. A case of a NAND circuit operated by three people is shown as the element region 3a.

上述したように、探針9は小パッド8a〜8dに接触し
ているので、微細な回路配線5a〜5dを破壊すること
がなく、多少の振動があっても探針9が小パッド8a〜
8dからずれたり隣接する回路配線と接触したりするこ
とがなく、また密集した領域であっても小パッドを適切
な位置に引出すことができるので複数の探針による故障
配線解析も容易にできるようになる。
As mentioned above, since the probe 9 is in contact with the small pads 8a to 8d, the fine circuit wiring 5a to 5d is not destroyed, and even if there is some vibration, the probe 9 is in contact with the small pads 8a to 8d.
It does not shift from 8d or come into contact with adjacent circuit wiring, and small pads can be pulled out to appropriate positions even in crowded areas, making it easy to analyze faulty wiring using multiple probes. become.

上記実施例においては、回路配線と引出配線とを1対1
で接続できる構成としたが、複数の回路配線に対し1つ
の引出配線を設ける構成としてもよいし、またこの逆で
あってもよい。複数対1の構成では探針の数を少なくで
きるという利点がある。
In the above embodiment, the circuit wiring and the lead wiring are connected one to one.
Although the configuration is such that one lead-out wiring can be connected to a plurality of circuit wirings, the configuration may be such that one lead-out wiring is provided for a plurality of circuit wirings, or vice versa. The multiple-to-one configuration has the advantage that the number of probes can be reduced.

また、上記実施例においては、小パッドをボンディング
パッドの間に配置したが特にこの位置に限定されること
なく探針が接触しやすい位置であれば他のどの位置でも
よい。そのためにボンディングパッドより小さくしであ
る。
Further, in the above embodiments, the small pads are placed between the bonding pads, but the small pads are not limited to this position, and may be placed at any other position as long as the probe can easily come into contact with them. Therefore, it is smaller than the bonding pad.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、内部回路を構成する回路
配線と絶縁膜を介して交差する引出配線と、この引出配
線と接続する小パッドとを設け、故障解析等には交差部
の絶縁膜を破壊して回路配線と引出配線とを接続し小パ
ッドに試験装置の探針を接触させて信号の伝達を行う構
成とすることにより、探針による微細な回路配線の破壊
、探針のずれ及び隣接配線との接触短絡などを防止する
ことができ、密集した領域であっても容易に故障解析等
を行うことができる効果がある。
As explained above, the present invention includes a lead wire that intersects with a circuit wire constituting an internal circuit via an insulating film, and a small pad that connects to this lead wire. By destroying the small pad to connect the circuit wiring and the lead wiring, and transmitting the signal by contacting the probe of the test equipment with the small pad, it is possible to avoid the destruction of minute circuit wiring by the probe and the displacement of the probe. Also, it is possible to prevent short circuits due to contact with adjacent wiring, and it is possible to easily perform failure analysis even in a crowded area.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す半導体チップの配置図
、第2図は第1図に示された実施例の故障解析方法を説
明するための半導体チップ及び試験装置の要部平面図、
第3図は第1図に示された実施例の各回路配線と引出配
線とをそれぞれ接続したときの回路図である。 1・・・半導体基板、2・・・内部回路、3a〜3b・
・・素子領域、4a〜4h・・・素子電極、5a〜5d
・・・回路配線、6・・・ボンディングパッド、7a〜
7d・・・引出配線、8a〜8d・・・小パッド、9・
・・探針。
FIG. 1 is a layout diagram of a semiconductor chip showing an embodiment of the present invention, and FIG. 2 is a plan view of main parts of a semiconductor chip and test equipment for explaining the failure analysis method of the embodiment shown in FIG. ,
FIG. 3 is a circuit diagram when each circuit wiring and lead wiring of the embodiment shown in FIG. 1 are connected. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Internal circuit, 3a-3b.
...Element area, 4a to 4h...Element electrode, 5a to 5d
...Circuit wiring, 6...Bonding pad, 7a~
7d...Output wiring, 8a-8d...Small pad, 9.
... Probe.

Claims (1)

【特許請求の範囲】[Claims] 半導体基板上に形成された複数の素子領域と、これら素
子領域の各素子電極と接続された複数の回路配線とを含
む内部回路と、この内部回路の所定の回路配線と接続し
て外部回路との信号の伝達を行う複数のボンディングパ
ッドと、前記複数の回路配線のうちの特定の回路配線と
絶縁膜を介して交差する複数の引出配線と、これら各引
出配線とそれぞれ接続し面積が前記ボンディングパッド
より小さく試験装置の探針を接触させるための小パッド
とを有することを特徴とする半導体装置。
An internal circuit including a plurality of element regions formed on a semiconductor substrate, a plurality of circuit wirings connected to each element electrode of these element regions, and an external circuit connected to a predetermined circuit wiring of this internal circuit. a plurality of bonding pads that transmit signals; a plurality of lead wires that intersect with a specific circuit wire of the plurality of circuit wires via an insulating film; 1. A semiconductor device comprising a small pad smaller than the pad and for contacting a probe of a test device.
JP10832687A 1987-04-30 1987-04-30 Semiconductor device Granted JPS63273330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10832687A JPS63273330A (en) 1987-04-30 1987-04-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10832687A JPS63273330A (en) 1987-04-30 1987-04-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS63273330A true JPS63273330A (en) 1988-11-10
JPH0577333B2 JPH0577333B2 (en) 1993-10-26

Family

ID=14481863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10832687A Granted JPS63273330A (en) 1987-04-30 1987-04-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS63273330A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8644069B2 (en) 2011-03-17 2014-02-04 Kabushiki Kaisha Toshiba Semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8644069B2 (en) 2011-03-17 2014-02-04 Kabushiki Kaisha Toshiba Semiconductor memory device

Also Published As

Publication number Publication date
JPH0577333B2 (en) 1993-10-26

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