JPS63268256A - Diffusion method for aluminum - Google Patents
Diffusion method for aluminumInfo
- Publication number
- JPS63268256A JPS63268256A JP10194687A JP10194687A JPS63268256A JP S63268256 A JPS63268256 A JP S63268256A JP 10194687 A JP10194687 A JP 10194687A JP 10194687 A JP10194687 A JP 10194687A JP S63268256 A JPS63268256 A JP S63268256A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- polycrystalline silicon
- wiring
- etching
- stuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 35
- 238000009792 diffusion process Methods 0.000 title description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000011229 interlayer Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- -1 e.g. Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はアルミニウム拡散方法に係り、特に半導体装置
の配線を形成するのに好適なアルミニウム拡散方法に関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an aluminum diffusion method, and particularly to an aluminum diffusion method suitable for forming wiring of a semiconductor device.
従来、アルミニウム配線形成方法については、アイ・イ
ー・イー・イー、トランザクション オン エレクトロ
ン、デバイス ポル イー・ディー３１．ナンバー６、
シュン １９８４年 第８２８頁から第８３１頁（ＩＥ
ＥＥ、 Ｔｒａｎｓ、 ｏ ｎ 。Conventional methods for forming aluminum wiring are described in IE, Transaction on Electron, Device Pol ED 31. number 6,
Shun 1984, pp. 828-831 (IE
EE, Trans, on.
Ｅｌｅｃｔｒｏｎ Ｄｅｖｉｃｅ、Ｖｏｌ、ＥＤ−３
］、Ｎｏ６ ＪＵＮＥ１９８４Ｐ８２８〜８３１）にお
いて論じられている。すなわち多結晶シリコンゲートの
ＭＯＳＦＥＴを、アルミニウムと多結晶シリコンの低温
熱処理での反応を利用して、アルミニウムゲートに置き
変える技術である。この技術は、アルミニウムの融点以
下の温度が熱処理することにより、多結晶シリコンとア
ルミニウムの接触部分からアルミニウムが多結晶シリコ
ン中へ成長することにより形成される。Electron Device, Vol, ED-3
], No. 6 JUNE 1984 P828-831). In other words, this is a technique for replacing a polycrystalline silicon gate MOSFET with an aluminum gate by utilizing the reaction between aluminum and polycrystalline silicon during low-temperature heat treatment. In this technique, aluminum is formed from a contact area between polycrystalline silicon and aluminum by growing into polycrystalline silicon through heat treatment at a temperature below the melting point of aluminum.
上記従来技術では、多結晶シリコンの結晶粒の大きさの
違いによりアルミニウムが均一に成長しない点について
配慮がされておらず、アルミニウムの成長が多結晶シリ
コンの結晶粒界を通る成長のため、配線幅が結晶粒径と
同等に狭いとアルミニウムの成長がその部分で止まって
しまうことから、ゲート長が微細な寸法のアルミニウム
ゲートのＭＯＳＦＥＴを形成できないという問題があっ
た。In the above conventional technology, no consideration is given to the fact that aluminum does not grow uniformly due to differences in the crystal grain size of polycrystalline silicon, and because aluminum grows through the grain boundaries of polycrystalline silicon, wiring If the width is as narrow as the crystal grain size, the growth of aluminum will stop at that portion, so there is a problem that an aluminum gate MOSFET with a minute gate length cannot be formed.
本発明の目的は、多結晶シリコンをアモリファス化或い
は結晶粒径を配線幅より十分小さくし、アルミニウムが
多結晶シリコン中を均一に成長することにより、配線幅
が微細な寸法のアルミニウム配線を形成するのに好適な
アルミニウム拡散方法を提供することにある。The purpose of the present invention is to form aluminum wiring with a fine wiring width by making polycrystalline silicon amorphous or making the crystal grain size sufficiently smaller than the wiring width so that aluminum grows uniformly in the polycrystalline silicon. The object of the present invention is to provide an aluminum diffusion method suitable for
上記目的は、多結晶シリコン被膜時と高温熱処理時に多
結晶シリコンの結晶粒径が成長しないように、多結晶シ
リコン被膜時に酸素、窒素、フッ素、アルゴンを添加さ
せておくことにより達成される。或いは多結晶シリコン
を被膜後にイオン打込み法により酸素、窒素、フッ素、
アルゴンを注入して、多結晶シリコンの結晶粒径を小さ
くするか、多量に注入することによりアモルファス化し
てもよい。ここで好ましくは、多結晶シリコンをアモル
ファス化する注２人量としては］−Ｑ２０個／ｄ以上で
あることが望ましい。The above object is achieved by adding oxygen, nitrogen, fluorine, and argon during the polycrystalline silicon coating so that the crystal grain size of the polycrystalline silicon does not grow during the polycrystalline silicon coating and high-temperature heat treatment. Alternatively, after coating polycrystalline silicon, oxygen, nitrogen, fluorine,
Argon may be implanted to reduce the crystal grain size of polycrystalline silicon, or it may be made amorphous by implanting a large amount of argon. Here, it is preferable that the number of people needed to turn the polycrystalline silicon into amorphous is -Q20 pieces/d or more.
多結晶シリコンで形成した配線部に多結晶シリコンをア
モルファス化する元素を、少なくとも一種類含有せしめ
ることにより多結晶シリコンがアモルファス化しアルミ
ニウムが多結晶シリコン中を均一に成長する。それによ
って、多結晶シリコンで形成した配線部がアルミニウム
に置き換わり配線幅が微細な寸法のアルミニウム配線を
形成することができる。また、アルミニウムの成長速度
は多結晶シリコンをアモルファス化する元素を含有しな
い場合と同等以上であるため、配線長が長い場合でも歩
留りは高い。By containing at least one element that makes polycrystalline silicon amorphous in a wiring portion formed of polycrystalline silicon, polycrystalline silicon becomes amorphous and aluminum grows uniformly in polycrystalline silicon. As a result, the wiring portion formed of polycrystalline silicon is replaced with aluminum, and an aluminum wiring with a fine wiring width can be formed. In addition, the growth rate of aluminum is equal to or higher than that in the case where the element that turns polycrystalline silicon into an amorphous state is not included, so the yield is high even when the wiring length is long.
以下、本発明の実施例を図面を用いて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明を用いてアルミニウムゲートのＭＯＳＦ
ＥＴを形成した例である。まず第１図（ａ）に示すよう
に半導体基板１の活性領域にゲート酸化膜２を例えば１
００人を形成し、コンタクト部をエツチングし、さらに
この時のマスクを用いて例えばｎ十領域３を形成する。Figure 1 shows an aluminum gate MOSF using the present invention.
This is an example of forming an ET. First, as shown in FIG.
00 layers are formed, a contact portion is etched, and further, using the mask used at this time, for example, an n+ region 3 is formed.
次に多結晶シリコン４を２０００人被着し、その後多結
晶シリコンをアモルファス化する元素、例えば酸素５を
・例えば１０１９個／ｄ導入する。次に第１図（ｂ）に
示すように多結晶シリコン４をエツチングし配線バタ−
ンを形成する。次にこの配線パターンをマスクにｎ−領
域６を形成しＬＤＤ構造とする。次に第１図（ｃ）に示
すように層間絶縁膜例えば酸化膜７を３０００ Ａ被着
し、アルミニウム８と多結晶シリコン４を接触させるべ
きコンタク！・部を形成する。Next, 2000 layers of polycrystalline silicon 4 are deposited, and then an element for making the polycrystalline silicon amorphous, such as oxygen 5, is introduced at 1019 atoms/d. Next, as shown in FIG. 1(b), the polycrystalline silicon 4 is etched to form a wiring pattern.
form a formation. Next, using this wiring pattern as a mask, an n- region 6 is formed to form an LDD structure. Next, as shown in FIG. 1(c), an interlayer insulating film such as an oxide film 7 is deposited at a thickness of 3000 A, and a contact is made to bring the aluminum 8 and the polycrystalline silicon 4 into contact!・Form a part.
次にアルミニウム８を被着しエツチングしてパターンを
形成する。このようにして形成したＭＯＳＦＥＴを例え
ば４５０℃で１０時間程度熱処理すると第１図（ｄ）に
示すようにアルミニウムが多結晶シリコン中を均一に拡
散してアルミニウム配線が形成される。このようにして
形成したアルミニウム配線のＭＯＳＦＥＴは、配線抵抗
を低減する効果があり、さらに仕事関数も小さくするこ
とができる６〔発明の効果〕
本発明によればアルミニウムが拡散した配線抵抗は、多
結晶シリコンの配線抵抗より充分小さく仕事関数も小さ
いので、ＬＳＩ素子の性能が向−ヒする。Next, aluminum 8 is deposited and etched to form a pattern. When the MOSFET thus formed is heat-treated at, for example, 450° C. for about 10 hours, aluminum is uniformly diffused in the polycrystalline silicon to form an aluminum wiring as shown in FIG. 1(d). The MOSFET with aluminum wiring formed in this way has the effect of reducing the wiring resistance and can further reduce the work function.6 [Effects of the Invention] According to the present invention, the wiring resistance in which aluminum is diffused is Since it is sufficiently smaller than the wiring resistance of crystalline silicon and has a smaller work function, it improves the performance of LSI devices.
第１図は本発明を適用したアルミニウム配線形成工程図
である。
１・・・半導体基板、２・ゲート酸化膜、３・・・ｎ十
領域、４・・・多結晶シリコン、５・・・酸素、６・・
ｎ−領域、７・・・酸化膜、８・・・アルミニウム。FIG. 1 is a process diagram for forming aluminum wiring to which the present invention is applied. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Gate oxide film, 3... N+ region, 4... Polycrystalline silicon, 5... Oxygen, 6...
n- region, 7... Oxide film, 8... Aluminum.
Claims (1)
において、前記多結晶シリコン中へ酸素、窒素、フッ素
、アルゴンのうちの少なくとも一種類の元素を導入させ
ることを特徴とするアルミニウムの拡散方法。1. A method for diffusing aluminum into polycrystalline silicon, the method comprising introducing at least one element among oxygen, nitrogen, fluorine, and argon into the polycrystalline silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10194687A JPS63268256A (en) | 1987-04-27 | 1987-04-27 | Diffusion method for aluminum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10194687A JPS63268256A (en) | 1987-04-27 | 1987-04-27 | Diffusion method for aluminum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63268256A true JPS63268256A (en) | 1988-11-04 |
Family
ID=14314063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10194687A Pending JPS63268256A (en) | 1987-04-27 | 1987-04-27 | Diffusion method for aluminum |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63268256A (en) |
-
1987
- 1987-04-27 JP JP10194687A patent/JPS63268256A/en active Pending
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