JPS63265448A - Ｍｏｓ型半導体装置の製造方法 - Google Patents
Ｍｏｓ型半導体装置の製造方法Info
- Publication number
- JPS63265448A JPS63265448A JP29736287A JP29736287A JPS63265448A JP S63265448 A JPS63265448 A JP S63265448A JP 29736287 A JP29736287 A JP 29736287A JP 29736287 A JP29736287 A JP 29736287A JP S63265448 A JPS63265448 A JP S63265448A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- doped
- phosphorus
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000002844 melting Methods 0.000 claims abstract description 7
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 5
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 12
- 239000011574 phosphorus Substances 0.000 abstract description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 229910020968 MoSi2 Inorganic materials 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- -1 and at the same time Chemical compound 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29736287A JPS63265448A (ja) | 1987-11-27 | 1987-11-27 | Ｍｏｓ型半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29736287A JPS63265448A (ja) | 1987-11-27 | 1987-11-27 | Ｍｏｓ型半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15684577A Division JPS5488783A (en) | 1977-12-26 | 1977-12-26 | Semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63265448A true JPS63265448A (ja) | 1988-11-01 |
| JPH028463B2 JPH028463B2 (enrdf_load_stackoverflow) | 1990-02-23 |
Family
ID=17845516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29736287A Granted JPS63265448A (ja) | 1987-11-27 | 1987-11-27 | Ｍｏｓ型半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63265448A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6114241A (en) * | 1998-06-29 | 2000-09-05 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a semiconductor device capable of reducing contact resistance |
| US6277738B1 (en) | 1999-06-23 | 2001-08-21 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a semiconductor device capable of reducing contact resistance |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112773A (enrdf_load_stackoverflow) * | 1974-06-13 | 1976-01-31 | Rca Corp | |
| JPS5131189A (ja) * | 1974-09-11 | 1976-03-17 | Sony Corp | Handotaisochi |
| JPS5132957A (ja) * | 1974-09-13 | 1976-03-19 | Matsushita Electric Ind Co Ltd | Insatsuhaisenban |
-
1987
- 1987-11-27 JP JP29736287A patent/JPS63265448A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112773A (enrdf_load_stackoverflow) * | 1974-06-13 | 1976-01-31 | Rca Corp | |
| JPS5131189A (ja) * | 1974-09-11 | 1976-03-17 | Sony Corp | Handotaisochi |
| JPS5132957A (ja) * | 1974-09-13 | 1976-03-19 | Matsushita Electric Ind Co Ltd | Insatsuhaisenban |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6114241A (en) * | 1998-06-29 | 2000-09-05 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a semiconductor device capable of reducing contact resistance |
| US6277738B1 (en) | 1999-06-23 | 2001-08-21 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a semiconductor device capable of reducing contact resistance |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH028463B2 (enrdf_load_stackoverflow) | 1990-02-23 |
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