JPS6326128B2 - - Google Patents
Info
- Publication number
- JPS6326128B2 JPS6326128B2 JP60096450A JP9645085A JPS6326128B2 JP S6326128 B2 JPS6326128 B2 JP S6326128B2 JP 60096450 A JP60096450 A JP 60096450A JP 9645085 A JP9645085 A JP 9645085A JP S6326128 B2 JPS6326128 B2 JP S6326128B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- weight
- parts
- quartz
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003822 epoxy resin Substances 0.000 claims description 37
- 229920000647 polyepoxide Polymers 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 239000010453 quartz Substances 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 13
- 239000000945 filler Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 5
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 229920003986 novolac Polymers 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 7
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000011256 inorganic filler Substances 0.000 description 3
- 229910003475 inorganic filler Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1 -dodecene Natural products CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 description 1
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical group CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 1
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 1
- LKMJVFRMDSNFRT-UHFFFAOYSA-N 2-(methoxymethyl)oxirane Chemical compound COCC1CO1 LKMJVFRMDSNFRT-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- ZWAJLVLEBYIOTI-UHFFFAOYSA-N cyclohexene oxide Chemical compound C1CCCC2OC21 ZWAJLVLEBYIOTI-UHFFFAOYSA-N 0.000 description 1
- FWFSEYBSWVRWGL-UHFFFAOYSA-N cyclohexene oxide Natural products O=C1CCCC=C1 FWFSEYBSWVRWGL-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 229940069096 dodecene Drugs 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- ADXGNEYLLLSOAR-UHFFFAOYSA-N tasosartan Chemical compound C12=NC(C)=NC(C)=C2CCC(=O)N1CC(C=C1)=CC=C1C1=CC=CC=C1C=1N=NNN=1 ADXGNEYLLLSOAR-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Description
（産業上の利用分野）
本発明は半導体封止用エポキシ樹脂組成物、特
には半導体装置成形時に極めて高い流動性を示す
と共にバリの発生が少なく、さらには熱膨張係数
の小さい成形物を与える半導体封止用エポキシ樹
脂組成物に関するものである。
（従来の技術）
半導体封止用樹脂についてはすでに各種のもの
が知られており、これにはエポキシ樹脂、シリコ
ーン樹脂、ジアリルフタレート樹脂、フエノール
樹脂、ポリフエニレンサルフアイド樹脂などを主
剤とする組成物が用いられているが、耐湿性、機
械特性、生産性、価格などの面からフエノール硬
化性エポキシ樹脂が最も多く使用されている。
しかし、最近における低圧トランスフアー成形
用金型はキヤビテイ数の増加に伴なつて金型寸法
が大型化してきており、このような金型で半導体
装置の成形を行なうと一部に樹脂が未充填となる
という事故が発生するおそれがあるため、この封
止用樹脂組成物には流動性のよいものとすること
が求められている。
そのため、フエノール硬化性エポキシ樹脂につ
いても１ 溶融粘度の低い樹脂を使用するか、低
分子の希釈剤を混合する、２ 硬化触媒の量を減
量する、３ 無機質充填剤量を減量する、という
方法が提案されているが、この１ の方法では流
動性は向上しても成形時のバリの発生が大きくな
り、希釈剤を使用すると成形物表面にニジミが出
たり、揮発分が多くなるので寸法変化が大きくな
るという不利があり、さらにはアルミニウム配線
の腐蝕が速くなるという欠点も発生する。また、
この２ の方法では樹脂組成物の硬化性がわるく
なるため生産性向上のために速硬化性にするとい
う要求に逆行するという不利があり、３ の方法
には樹脂組成物の熱膨張係数や応力が大きくなつ
て耐クラツク性が低下し、さらにはシリコンチツ
プ表面のアルミニウム配線やパツシベーシヨン膜
に加わる力が大きくなり、耐湿性も低下するとい
う不利が発生する。
また、このエポキシ樹脂組成物についてはこゝ
に添加される無機質充填剤として球状石英粉末を
用いることが知られており、これについては球状
石英を配合すると応力が低下するということから
樹脂組成物に平均粒子径が１〜60μｍの球状溶融
シリカを30〜80重量％添加することも提案されて
いる（特開昭58−138740号公報参照）が、これに
は流動性が十分満足すべきものでないために大型
化した成形金型を用いたときに未充填が発生する
ほか樹脂モレ、バリの発生が多いという問題点が
ある。
（発明の構成）
本発明はこのような不利を解決することのでき
る半導体封止用エポキシ樹脂組成物に関するもの
で、これは１ フエノール硬化性エポキシ樹脂
100重量部、２ 平均粒径１〜25μｍの球状石英
粉末20〜99重量％と、90重量％以上が粒径1μｍ
以下の粉末である微細石英粉末１〜80重量％とか
らなる石英質充填剤100〜500重量部とからなるこ
とを特徴とするものである。
すなわち、本発明者らは流動性が高く、バリの
発生も少ない半導体封止用エポキシ樹脂組成物に
ついて種々検討した結果、これにはエポキシ樹脂
に添加する無機質充填剤として石英粉末を使用す
るが、この石英粉末を特に粒径が1μｍ以下の微
細石英粉末を含んだものとすると流動性が増大す
るし、バリの発生も減少することができるという
ことを見出し、この微細石英粉末についてはその
90重量％以上が粒径1μｍ以下のものとし、これ
を平均粒径が１〜25μｍである球状石英粉末と混
合して使用すればよいということ、またこれによ
ればフエノール硬化性エポキシ樹脂に対する石英
粉末の高充填が可能となるのでこの組成物から作
られた成形物の熱膨張係数を小さくすることがで
きるということを確認し、こゝに使用する石英粉
末の種類、配合比などについての研究を進めて本
発明を完成させた。
つぎに本発明の組成物を構成する各成分につい
て説明する。
まず、本発明において使用される第１成分とし
てのフエノール硬化性エポキシ樹脂は、１分子中
に２個以上のエポキシ基を有するエポキシ樹脂と
フエノール系硬化剤とからなる硬化可能なエポキ
シ樹脂あり、このものは後述するフエノール系硬
化剤によつて硬化されるものであればその分子構
造、分子量などに特に制限はなく、従来から知ら
れている種々のものを使用することができ、これ
には例えばエピクロルヒドリンとビスフエノール
をはじめとする各種のノボラツク樹脂から合成さ
れるエポキシ樹脂、脂環式エポキシ樹脂あるいは
塩素や臭素などのハロゲン原子を導入したエポキ
シ樹脂などがあげられる。このエポキシ樹脂にモ
ノエポキシ化合物を適宜併用することは差支えな
く、このモノエポキシ化合物としてはスチレンオ
キシド、シクロヘキセンオキシド、プロピレンオ
キシド、メチルグリシジルエーテル、エチルグリ
シジルエーテル、フエニルグリシジルエーテル、
アリルグリシジルエーテル、オクチレンオキシ
ド、ドデセンオキシドなどが例示される。
また、このフエノール系硬化剤としては従来公
知の種々のものを使用することができ、これには
例えばフエノールノボラツク、クレゾールノボラ
ツクなどのように１分子中に２個以上の水酸基を
有するものをあげることができる。
なお、このエポキシ樹脂には上記した硬化剤と
エポキシ樹脂との反応を促進させる目的で各種の
硬化促進剤、例えばイミダゾールあるいはその誘
導体、第三級アミン誘導体、ホスフイン系誘導
体、シクロアミジン誘導体などを併用することは
任意とされる。
つぎにこの組成物に使用される第２成分として
の石英系充填剤は平均粒径が１〜25μｍの球状石
英と90重量％以上が1μｍ以下の微細石英粉末と
からなるものとされる。
この平均粒径が１〜25μｍの球状石英はアスペ
クト比が１〜1.3とされるものであるが、このも
のは例えば合成あるいは天然の石英粉末を水素ま
たはプロパンなどの可燃ガスと酸素ガスとを用い
て火炎中で溶融するか、テトラエトキシシランや
テトラメトキシシランを加水分解することによつ
て得たものあるいは加水分解後に焼結処理または
溶融したものとすればよい。
また、この微細石英粉末は天然あるいは合成の
石英塊を紛砕するか、粉砕後さらに分級すること
によつて得たものとすればよいが、このものは
1μｍ以下の粒径をもつものが90重量％以下では
これを添加したエポキシ樹脂組成物に十分満足す
べき流動性が与えられず、さらには樹脂モレ、バ
リの発生が大きくなるので90重量％以上が1μｍ
以下の粒径のものとする必要がある。
この第２成分における上記した球状石英と微細
石英粉末との配合比は微細石英粉末が全量の１重
量％以下では本発明のエポキシ樹脂組成物に流動
性向上、バリの減少という目的が達成されず、80
重量％以上とするとこの組成物から作られる成形
体が樹脂クラツクの発生し易いものとなるので、
微細石英粉末を１〜80重量％含有するものとする
ことが必要とされる。
なお、この第２成分としての石英充填剤の配合
量は第１成分としてのエポキシ樹脂100重量部に
対し、100重量部以下とするとこの組成物から作
られる成形品が線膨張係数の大きいものとなり、
耐クラツク性も満足するものにならないし、500
重量部以上とするとこれのエポキシ樹脂への分散
性がわるくなり、この組成物の流動性もわるくな
るので、これは100〜500重量部の範囲とする必要
があるが、この好ましい範囲は200〜350重量部と
される。
本発明のエポキシ樹脂組成物は上記した第１〜
第２成分の所定量を均一に混合することによつて
得ることができるが、この石英系充填剤は予じめ
その表面をカーボンフアンクシヨナルシランなど
で処理したものとしてもよく、これにはまた必要
に応じ各種の添加剤、例えばカーボンブラツクな
どの顔料、天然ワツクスなどの離型剤、難燃剤、
オルガノポリシロキサン、オルガノポリシロキサ
ンとフエノールノボラツク樹脂とのブロツク共重
合体、変性ポリブタジエンなどの可撓性付与剤、
カーボンフアンクシヨナルシランなどを添加して
もよい。
つぎに本発明の実施例をあげるが、例中の部は
重量部を示したものであり、各表中における物性
値は下記の方法による試験結果を示したものであ
る。
１ スパイラルフロー
エポキシ樹脂組成物の粉末20ｇを、EMMI−
１−66に準じた金型を用いて金型温度175℃、プ
ランジヤー圧力70Kg／cm2で成形したときの値を測
定した。
２ 樹脂もれ、バリ
エポキシ樹脂組成物の粉末20ｇを、10μｍ、
30μｍのスリツトをもつバリ測定用金型を用いて
金型温度175℃、プランジヤー圧力70Kg／cm2で成
形し、このときのスリツトに洩れた樹脂の長さを
ノギスで測定した。
３ 熱膨張係数
エポキシ樹脂組成物を175℃、２分の成形条件
で、４mmφ×高さ15mmの円柱状に成形し、180℃
で４時間アフターキユアーしてからアグネ
DL1500（真空理化社製商品名）を用いて25℃から
120℃までの熱膨張係数を測定した。
４ 曲げ弾性率
エポキシ樹脂組成物を175℃、２分の成形条件
で100×10×４mmの抵抗棒に成形し、180℃で４時
間アフターキユアーしてからJIS K6911の方法に
準じて曲げ弾性率を測定した。
５ 耐クラツクテスト
9.0×4.5×0.5mmのシリコンチツプ40個を14PIN
ICフレームに貼り付け、これにエポキシ樹脂組
成物を175℃、２分の成形条件で成形し、180℃で
４時間アフターキユアーしてから、−196℃（１
分）〜＋300℃（１分）の温度サイクルテストを
行ない、10サイクル後における樹脂クラツク発生
率を測定した。
実施例１〜３、比較例１〜３
クレゾールノボラツク型エポキシ樹脂・ECN
−1270（チバ社製商品名）600部、フエノールノボ
ラツク樹脂・TD2093（大日本インキ社製商品名）
300部に、第１表に示した量の石英系充填剤とシ
リコーンオイル変性エポキシ樹脂（シリコーン変
性率30％）100部、トリフエニルホスフイン10部、
カルナバワツクス10部、三酸化アンチモン100部、
γ−グリシドキシプロピルトリメトキシシラン10
部およびカーボンブラツク10部を配合し、ヘンシ
エルミキサーで予備ブレンドしてから押出機で混
練し、冷却後粉砕してフエノール硬化性エポキシ
樹脂組成物６種を作り、ついでこれについての物
性をしらべたところ、第２表に示したとおりの結
果が得られた。
(Industrial Application Field) The present invention relates to an epoxy resin composition for semiconductor encapsulation, particularly for semiconductor devices that exhibits extremely high fluidity during molding of semiconductor devices, produces fewer burrs, and provides molded products with a small coefficient of thermal expansion. The present invention relates to an epoxy resin composition for sealing. (Prior art) Various types of resins for semiconductor encapsulation are already known, including compositions based on epoxy resins, silicone resins, diallyl phthalate resins, phenol resins, polyphenylene sulfide resins, etc. However, phenol-curable epoxy resins are most commonly used due to their moisture resistance, mechanical properties, productivity, and cost. However, the dimensions of recent low-pressure transfer molding molds have become larger as the number of cavities has increased, and when semiconductor devices are molded using such molds, some parts are not filled with resin. Therefore, it is required that the sealing resin composition has good fluidity. Therefore, the following methods are available for phenol-curable epoxy resins: 1. Use a resin with a low melt viscosity or mix a low-molecular diluent, 2. Reduce the amount of curing catalyst, and 3. Reduce the amount of inorganic filler. However, although method 1 improves fluidity, it increases the occurrence of burrs during molding, and if a diluent is used, smudges appear on the surface of the molded product, and the volatile content increases, resulting in dimensional changes. This has the disadvantage of increasing the amount of metal, and also has the disadvantage of accelerating corrosion of the aluminum wiring. Also,
Method 2 has the disadvantage that the curability of the resin composition deteriorates, which goes against the demand for rapid curing in order to improve productivity. This results in an increase in crack resistance, which results in a decrease in crack resistance.Furthermore, the force applied to the aluminum wiring and passivation film on the surface of the silicon chip increases, resulting in a decrease in moisture resistance. In addition, it is known that spherical quartz powder is used as an inorganic filler in this epoxy resin composition, and this is because adding spherical quartz reduces stress. It has also been proposed to add 30 to 80% by weight of spherical fused silica with an average particle diameter of 1 to 60 μm (see Japanese Patent Application Laid-Open No. 138740/1982), but this does not have sufficient fluidity. When using a larger mold for molding, there are problems such as unfilled parts, resin leakage, and burrs. (Structure of the Invention) The present invention relates to an epoxy resin composition for semiconductor encapsulation that can solve such disadvantages, and this invention comprises 1 phenol-curable epoxy resin.
100 parts by weight, 20 to 99% by weight of spherical quartz powder with an average particle size of 1 to 25 μm, and 90% by weight or more of particle size of 1 μm
It is characterized by consisting of 1 to 80 parts by weight of fine quartz powder, which is the following powder, and 100 to 500 parts by weight of a quartz filler. That is, as a result of various studies by the present inventors regarding epoxy resin compositions for semiconductor encapsulation that have high fluidity and less occurrence of burrs, they used quartz powder as an inorganic filler added to the epoxy resin. It was discovered that if this quartz powder contains fine quartz powder with a particle size of 1 μm or less, the fluidity will increase and the occurrence of burrs can be reduced.
90% by weight or more of the particles should be 1 μm or less in size, and this should be used in combination with spherical quartz powder with an average particle size of 1 to 25 μm. We confirmed that it was possible to reduce the thermal expansion coefficient of molded products made from this composition because it enabled high powder filling, and we conducted research on the type of quartz powder to be used, the blending ratio, etc. The present invention was completed by proceeding with the following steps. Next, each component constituting the composition of the present invention will be explained. First, the phenol-curable epoxy resin as the first component used in the present invention is a curable epoxy resin consisting of an epoxy resin having two or more epoxy groups in one molecule and a phenolic curing agent. There are no particular restrictions on the molecular structure, molecular weight, etc. of the material as long as it can be cured with the phenolic curing agent described below, and various conventionally known materials can be used. Examples include epoxy resins synthesized from various novolac resins such as epichlorohydrin and bisphenol, alicyclic epoxy resins, and epoxy resins into which halogen atoms such as chlorine and bromine are introduced. There is no problem in appropriately using a monoepoxy compound in combination with this epoxy resin, and examples of the monoepoxy compound include styrene oxide, cyclohexene oxide, propylene oxide, methyl glycidyl ether, ethyl glycidyl ether, phenyl glycidyl ether,
Examples include allyl glycidyl ether, octylene oxide, and dodecene oxide. In addition, various conventionally known phenolic curing agents can be used, including those having two or more hydroxyl groups in one molecule, such as phenol novolac and cresol novolac. I can give it to you. In addition, various curing accelerators such as imidazole or its derivatives, tertiary amine derivatives, phosphine derivatives, cycloamidine derivatives, etc. are used in combination with this epoxy resin for the purpose of promoting the reaction between the above-mentioned curing agent and the epoxy resin. Doing so is optional. Next, the quartz-based filler used as the second component in this composition is made of spherical quartz having an average particle size of 1 to 25 μm and 90% by weight or more of fine quartz powder having a size of 1 μm or less. This spherical quartz with an average particle size of 1 to 25 μm has an aspect ratio of 1 to 1.3, and this quartz is produced by, for example, synthetic or natural quartz powder using combustible gas such as hydrogen or propane and oxygen gas. It may be obtained by melting in a flame, by hydrolyzing tetraethoxysilane or tetramethoxysilane, or by sintering or melting after hydrolysis. In addition, this fine quartz powder may be obtained by crushing natural or synthetic quartz blocks, or by further classifying them after crushing.
If particles with a particle size of 1 μm or less are less than 90% by weight, the epoxy resin composition containing them will not have sufficient fluidity, and resin leakage and burrs will increase, so it should be more than 90% by weight. is 1μm
The particle size must be as follows. If the blending ratio of the above-mentioned spherical quartz and fine quartz powder in this second component is less than 1% by weight of the total amount of fine quartz powder, the purpose of improving fluidity and reducing burrs in the epoxy resin composition of the present invention will not be achieved. , 80
If it exceeds % by weight, the molded product made from this composition will be prone to resin cracks.
A content of 1 to 80% by weight of fine quartz powder is required. If the amount of the quartz filler as the second component is less than 100 parts by weight per 100 parts by weight of the epoxy resin as the first component, the molded product made from this composition will have a large coefficient of linear expansion. ,
The crack resistance is also not satisfactory, and 500
If the amount is more than 1 part by weight, the dispersibility in the epoxy resin will be poor, and the fluidity of the composition will also be poor. It is said to be 350 parts by weight. The epoxy resin composition of the present invention has the above-mentioned first to
This quartz-based filler can be obtained by uniformly mixing a predetermined amount of the second component, but the surface of this quartz-based filler may be treated with carbon functional silane or the like in advance; In addition, various additives may be added as necessary, such as pigments such as carbon black, mold release agents such as natural wax, flame retardants, etc.
Flexibility imparting agents such as organopolysiloxane, block copolymer of organopolysiloxane and phenol novolac resin, modified polybutadiene,
Carbon functional silane or the like may be added. Next, examples of the present invention will be given, where parts in the examples indicate parts by weight, and physical property values in each table indicate test results by the following method. 1 Add 20 g of spiral flow epoxy resin composition powder to EMMI-
The values were measured when molding was performed using a mold according to No. 1-66 at a mold temperature of 175° C. and a plunger pressure of 70 kg/cm 2 . 2 Resin leakage, burrs 20g of powder of epoxy resin composition, 10μm,
Molding was carried out using a burr measuring mold with a 30 μm slit at a mold temperature of 175° C. and a plunger pressure of 70 kg/cm 2 , and the length of the resin leaking into the slit was measured using calipers. 3 Coefficient of thermal expansion The epoxy resin composition was molded at 175°C for 2 minutes into a cylinder shape of 4 mmφ x 15 mm in height, and then heated to 180°C.
Agne after 4 hours of after cure.
From 25℃ using DL1500 (product name manufactured by Shinku Rika Co., Ltd.)
The coefficient of thermal expansion up to 120°C was measured. 4 Flexural modulus The epoxy resin composition was molded into a 100 x 10 x 4 mm resistance bar at 175°C for 2 minutes, and after cured at 180°C for 4 hours, the bending elasticity was determined according to the method of JIS K6911. The rate was measured. 5 Crack resistance test 40 silicon chips of 9.0 x 4.5 x 0.5 mm are connected to 14 PIN
The epoxy resin composition was applied to the IC frame and molded at 175°C for 2 minutes, after-cured at 180°C for 4 hours, and then -196°C (1
A temperature cycle test was conducted from 1 minute) to +300°C (1 minute), and the resin crack occurrence rate after 10 cycles was measured. Examples 1 to 3, Comparative Examples 1 to 3 Cresol novolac type epoxy resin/ECN
−1270 (product name manufactured by Ciba Co., Ltd.) 600 parts, phenol novolak resin TD2093 (product name manufactured by Dainippon Ink Co., Ltd.)
300 parts, 100 parts of silicone oil modified epoxy resin (silicone modification rate 30%), quartz filler in the amount shown in Table 1, 10 parts of triphenylphosphine,
10 parts of carnauba wax, 100 parts of antimony trioxide,
γ-glycidoxypropyltrimethoxysilane 10
and 10 parts of carbon black, pre-blended in a Henschel mixer, kneaded in an extruder, cooled and pulverized to produce six types of phenol-curable epoxy resin compositions, and then examined the physical properties of these. However, the results shown in Table 2 were obtained.
【表】【table】
【表】
実施例４〜７、比較例４〜５
クレゾールノボラツク型エポキシ樹脂・
EOCN102（日本化薬社製商品名）650部、フエノ
ールノボラツク樹脂・TD2093（前出）300部、ブ
ロム化エポキシ樹脂・YDB340（東都化成社製商
品名）50部に、第３表に示した量の石英系充填剤
と実施例１〜３で使用したものと同じ種類、量の
硬化触媒、離型剤、シランカツプリング剤を配合
して、上記と同様に処理してフエノール硬化性エ
ポキシ樹脂組成物６種を作り、ついでこれについ
ての物性をしらべたところ、第４表に示したとお
りの結果が得られた。[Table] Examples 4 to 7, Comparative Examples 4 to 5 Cresol novolac type epoxy resin
650 parts of EOCN102 (trade name manufactured by Nippon Kayaku Co., Ltd.), 300 parts of phenol novolac resin TD2093 (mentioned above), 50 parts of brominated epoxy resin YDB340 (trade name manufactured by Toto Kasei Co., Ltd.) as shown in Table 3. The same amount of quartz-based filler and the same type and amount of curing catalyst, mold release agent, and silane coupling agent as those used in Examples 1 to 3 were mixed, and the same amount was treated as above to obtain a phenol-curable epoxy resin. When six types of compositions were prepared and their physical properties were examined, the results shown in Table 4 were obtained.
【表】【table】
Claims (1)
量％と、90重量％以上が粒径1μｍ以下の粉末
である微細石英粉末１〜80重量とからなる石英
質充填剤 100〜500重量部 とからなることを特徴とする半導体封止用エポキ
シ樹脂組成物。[Scope of Claims] 1 1 100 parts by weight of phenol-curable epoxy resin 2 20-99% by weight of spherical quartz powder with an average particle size of 1-25 μm, and fine quartz powder of which 90% by weight or more is powder with a particle size of 1 μm or less 1 to 80 parts by weight of a quartz filler; and 100 to 500 parts by weight of an epoxy resin composition for semiconductor encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9645085A JPS61254619A (en) | 1985-05-07 | 1985-05-07 | Epoxy resin composition for encapsulation of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9645085A JPS61254619A (en) | 1985-05-07 | 1985-05-07 | Epoxy resin composition for encapsulation of semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61254619A JPS61254619A (en) | 1986-11-12 |
| JPS6326128B2 true JPS6326128B2 (en) | 1988-05-28 |
Family
ID=14165354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9645085A Granted JPS61254619A (en) | 1985-05-07 | 1985-05-07 | Epoxy resin composition for encapsulation of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61254619A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61268750A (en) * | 1985-05-22 | 1986-11-28 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor sealing use |
| JP2523669B2 (en) * | 1987-08-07 | 1996-08-14 | 日東電工株式会社 | Semiconductor device |
| JPH0753791B2 (en) * | 1987-09-04 | 1995-06-07 | 東レ株式会社 | Resin composition for semiconductor encapsulation |
| JPH07103263B2 (en) * | 1988-04-15 | 1995-11-08 | 新日鐵化学株式会社 | Silica for filling sealing resin |
| JPH01294765A (en) * | 1988-05-20 | 1989-11-28 | Nippon Retsuku Kk | Epoxy resin composition |
| JPH0645740B2 (en) * | 1989-03-01 | 1994-06-15 | 信越化学工業株式会社 | Epoxy resin composition for semiconductor encapsulation |
| IT1268326B1 (en) * | 1994-08-05 | 1997-02-27 | Sasib Spa | COMPOSITE MATERIAL, PARTICULARLY FOR THE MANUFACTURE OF STATIC COMPONENTS FOR MACHINES, AS WELL AS STATIC COMPONENT |
| JP2716962B2 (en) * | 1996-01-29 | 1998-02-18 | 日東電工株式会社 | Epoxy resin composition for semiconductor encapsulation |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53102361A (en) * | 1977-02-18 | 1978-09-06 | Toray Silicone Co Ltd | Thermosetting resin composition |
| JPS5443021A (en) * | 1977-09-12 | 1979-04-05 | Minolta Camera Co Ltd | F/stop digital value display device of cameras |
| JPS56122145A (en) * | 1980-02-29 | 1981-09-25 | Shin Etsu Chem Co Ltd | Resin composition for sealing semiconductor device |
| JPS57195117A (en) * | 1981-05-27 | 1982-11-30 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and its preparation |
| JPS58138740A (en) * | 1982-02-15 | 1983-08-17 | Denki Kagaku Kogyo Kk | Resin composition |
| JPS59108026A (en) * | 1982-12-10 | 1984-06-22 | Toshiba Chem Corp | Epoxy resin composition for sealing |
| JPS59204633A (en) * | 1983-05-06 | 1984-11-20 | Denki Kagaku Kogyo Kk | Resin composition with low radioactivity |
| JPS6051613A (en) * | 1983-07-26 | 1985-03-23 | チバ−ガイギ− アクチエンゲゼルシヤフト | Spherical fused silica and use as filler and resin composition |
-
1985
- 1985-05-07 JP JP9645085A patent/JPS61254619A/en active Granted
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53102361A (en) * | 1977-02-18 | 1978-09-06 | Toray Silicone Co Ltd | Thermosetting resin composition |
| JPS5443021A (en) * | 1977-09-12 | 1979-04-05 | Minolta Camera Co Ltd | F/stop digital value display device of cameras |
| JPS56122145A (en) * | 1980-02-29 | 1981-09-25 | Shin Etsu Chem Co Ltd | Resin composition for sealing semiconductor device |
| JPS57195117A (en) * | 1981-05-27 | 1982-11-30 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and its preparation |
| JPS58138740A (en) * | 1982-02-15 | 1983-08-17 | Denki Kagaku Kogyo Kk | Resin composition |
| JPS59108026A (en) * | 1982-12-10 | 1984-06-22 | Toshiba Chem Corp | Epoxy resin composition for sealing |
| JPS59204633A (en) * | 1983-05-06 | 1984-11-20 | Denki Kagaku Kogyo Kk | Resin composition with low radioactivity |
| JPS6051613A (en) * | 1983-07-26 | 1985-03-23 | チバ−ガイギ− アクチエンゲゼルシヤフト | Spherical fused silica and use as filler and resin composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61254619A (en) | 1986-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0329259B2 (en) | ||
| JPH0697325A (en) | Resin-sealed semicondutor device | |
| JP2019203122A (en) | Thermosetting maleimide resin composition for sealing semiconductor, and semiconductor device | |
| JPS6355532B2 (en) | ||
| KR970004948B1 (en) | Resin encapsulation type semiconductor device | |
| JPS6326128B2 (en) | ||
| JPH0284458A (en) | Rubber modified phenol resin, epoxy resin composition and semiconductor device sealed with the composition | |
| JPS6263453A (en) | Semiconductor device | |
| KR100429363B1 (en) | Epoxy resin composition for semiconductor device sealing | |
| US6168872B1 (en) | Semiconductor encapsulating epoxy resin composition and semiconductor device | |
| JP3056667B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JP3585615B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JP2003327666A (en) | Epoxy resin composition and semiconductor sealed device | |
| JPH07107091B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JPH08337634A (en) | Epoxy resin composition and semiconductor device sealed therewith | |
| JP3309688B2 (en) | Method for producing epoxy resin composition | |
| JPH0521651A (en) | Epoxy resin molding material for sealing semiconductor | |
| JP2000026708A (en) | Epoxy resin composition and semiconductor device | |
| JP2716962B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JP2009298961A (en) | Epoxy resin composition for sealing and method for manufacturing the same | |
| JPH03167250A (en) | Epoxy resin composition | |
| JP2002284859A (en) | Epoxy resin composition and semiconductor device | |
| JPH05105739A (en) | Resin composition for sealing semiconductor | |
| JPH02219814A (en) | Epoxy resin composition | |
| JP2658749B2 (en) | Resin composition for semiconductor encapsulation and semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |