JPS63257237A - Wire bonding - Google Patents
Wire bondingInfo
- Publication number
- JPS63257237A JPS63257237A JP62092717A JP9271787A JPS63257237A JP S63257237 A JPS63257237 A JP S63257237A JP 62092717 A JP62092717 A JP 62092717A JP 9271787 A JP9271787 A JP 9271787A JP S63257237 A JPS63257237 A JP S63257237A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- capillary
- point
- bonding
- bonding point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、ワイヤボンディング装置に8けるワイヤボ
ンディング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wire bonding method using a wire bonding apparatus.
ワイヤボンディングは、例えば第3a乃至り図に示され
たように行なわnる(特開昭57−87143号公報参
照)。丁なわち、電極(1)によりワイヤ(2]の先端
にボール(3ンを形属しく第3&図)キャピラリ(4ン
が下降して第1ボンディング点である半導体チップ(5
)にボール(3)を圧着しく第3b図)、ワイヤ(2)
を繰り出しながらキャピラリ(4)が上昇しく第3c図
) 、XX方方面移動しながらさらに上昇しく第3”l
l5)、その後ワイヤ(2)をひきこみながら下降移動
しく第3θ図)、さらに下降してリード(6ンにワイヤ
(2)を接触させ(第3を図)、ワイヤループ(7]を
形成してリード(6)にワイヤ(2)をキャピラリ(4
)で第2ボンディング点に圧着しく第3 g ’A )
、クランパ(図示せず〕によりワイヤを引張って切断
しながら再び上昇(第3h図)して次のボンディングへ
備えるという一連の作業で行なわnてきた。Wire bonding is performed, for example, as shown in Figures 3a to 3 (see Japanese Patent Laid-Open No. 57-87143). In other words, the electrode (1) connects the tip of the wire (2) with the ball (3) to the capillary (4) which is the first bonding point to the semiconductor chip (5).
3b) and the wire (2).
The capillary (4) rises as it moves forward (Fig. 3c), and further rises as it moves in the XX direction.
15), then move downward while pulling in the wire (2) (Fig. 3θ), and further descend to contact the wire (2) with the lead (6) (Fig. 3) to form a wire loop (7). and connect the wire (2) to the lead (6) into the capillary (4).
) to the second bonding point.
The wire was pulled and cut using a clamper (not shown), and then raised again (Fig. 3h) to prepare for the next bonding process.
ところが、第3+L−f図に示すようにワイヤ(2)は
キャピラリ(4)と第1ボンディング点との間でS字形
に変形していくため、第36図のようにキャピラリ(4
)が下降していくとワイヤの変形でキャピラリ(4]の
先端を通るワイヤに対する摩擦抵抗が大きくなり、ワイ
ヤ(2]はキャピラリ(4)より上へひきこまれ5こく
くなり、第3f図に示すようにキャピラリ(4)より先
にワイヤのわん曲部(Nがリード(6〕に接触し、キャ
ピラリ(4)が降下するのにともないその接触点が第2
ボンディング点の方lこ移動し圧着される。However, as shown in Figure 3+L-f, the wire (2) deforms into an S-shape between the capillary (4) and the first bonding point, so the wire (2) deforms into an S-shape as shown in Figure 36.
) as it descends, the frictional resistance against the wire passing through the tip of the capillary (4) increases due to the deformation of the wire, and the wire (2) is pulled above the capillary (4) and becomes 5mm thick, as shown in Figure 3f. As shown, the curved part (N) of the wire contacts the lead (6) before the capillary (4), and as the capillary (4) descends, the contact point becomes the second contact point.
It moves towards the bonding point and is crimped.
第1ボンディング点から第2ボンディング点までのボン
ディング距離が長くなるに従い、ワイヤのわん曲(A)
が大きくなってリードとの接触点が第2ボンディング点
から離n1極端な場合iこはリード上からはずnて第4
a図番こ示すように半導体チップ(5]や半導体チップ
(5ンが取りつけられているダイパッド部(8)とエツ
ジショート(S)したり、そう極端でなくとも第4b図
のようにエツジショートが発生しや丁い状態になる。ま
た、半導体装置の種類番こより第2ボンディング点をリ
ードのエツジ近くにしなければならない場合も同様の問
題が生じる。ざら(こ、ボンディング距離が良いとワイ
ヤ径に対するワイヤ長が長くなって、形成されるワイヤ
ループ(7)が不安定になるため、ボンディング中に加
えら几た応力や元来持っていたワイヤのくせなどの影斡
でワイヤが曲がり、隣りのワイヤと接触Tるといった問
題も生じていた。As the bonding distance from the first bonding point to the second bonding point increases, the curve of the wire (A) increases.
If the contact point with the lead is far away from the second bonding point due to large
As shown in figure a, there may be an edge short (S) with the semiconductor chip (5) or the die pad part (8) to which the semiconductor chip (5) is attached, or even if it is not so extreme, there may be an edge short as shown in figure 4b. A similar problem occurs when the second bonding point must be placed near the edge of the lead due to the type of semiconductor device. As the length of the wire increases, the wire loop (7) formed becomes unstable, and the wire bends due to the stress applied during bonding or the original habit of the wire, causing the wire to bend when adjacent to it. Problems such as contact with other wires also occurred.
この発明は上記のような問題点を解消するためになさn
たもので、ボンディング距離や半導体装置の種類などに
力)かわらず安定したワイヤループが得られるワイヤボ
ンディング方法を得ることを目的とする。This invention was made to solve the above problems.
The present invention aims to provide a wire bonding method that can obtain a stable wire loop regardless of the bonding distance, type of semiconductor device, etc.
この発明に係るワイヤボンディング方法は、第2ボンデ
ィング点の手前でキャピラリの下降を一時停止あるいは
減速してワイヤをXY方方面引張るような軌跡を描かせ
るようにしたものである0
〔作用〕
この発明に2けるワイヤボンディング方法は、第2ボン
ディング点の手前でワイヤをXY方同番こ引張るような
軌跡でキャピラリを勤か丁ことにより、ワイヤiこ張力
が付勢され、エツジショートやワイヤの曲がりが防止で
き、ワイヤボンディングの信頼性が同上する。The wire bonding method according to the present invention is such that the descending of the capillary is temporarily stopped or decelerated before the second bonding point, and the wire is drawn to draw a trajectory in which the wire is pulled in the XY direction.0 [Operation] This invention In the second wire bonding method, the capillary is pulled in the same direction in the X and Y directions before the second bonding point, thereby applying tension to the wire and preventing edge shorts and bending of the wire. can be prevented, and the reliability of wire bonding is improved.
以下、この発明の一実施例を第1図fこついて説明する
。第1a図番こ示すように、キャピラリ(4)は第1ボ
ンディング点(イ)にワイヤ(2]をボンディングした
後、移動上昇して最上昇点(ロ)を通り続いて下降する
が、手前点(ハ)で一旦キャビラリ(4)は下降を停止
し、上方点(=Jまで水平移動した後再び下降した第2
ボンディング点(ホ)憂こワイヤ(2)をボンディング
する。An embodiment of the present invention will be described below with reference to FIG. 1F. As shown in Fig. 1a, the capillary (4), after bonding the wire (2) to the first bonding point (a), moves upward, passes through the highest point (b), and then descends. At point (C), the cavity (4) once stopped descending, moved horizontally to the upper point (=J), and then descended again.
Bonding point (e) Bond the wire (2).
このような軌跡でキャビ:8.ラリ(4]を動か丁こと
により、ワイヤループ(7戸こ張力がかかり、キャピラ
リ(4)側のわん白点が(A)から(B)に移動し、ボ
ンディング距離や半導体装置の種類によらずエツジショ
ートが防止できるとともに、ワイヤループ(7)が安定
してワイヤループ曲がりの発生が防止でき、ボンディン
グの信頼性が同上する。Cab with a trajectory like this: 8. By moving the capillary (4), tension is applied to the wire loop (7), and the dot on the capillary (4) side moves from (A) to (B), depending on the bonding distance and the type of semiconductor device. In addition to preventing edge shorts, the wire loop (7) is stabilized, preventing wire loop bending, and bonding reliability is improved.
なお、上記実施例では第2ボンディング点の手前でキャ
ピラリ(4]の下降を一旦停止して水平に移動させたが
、第2図に示すようにキャピラリ(4]の下降速度を減
速させ、第2ボンディング点に同の1つて斜めに下降さ
せてもよい。In the above embodiment, the descending of the capillary (4) was temporarily stopped before the second bonding point and the capillary (4) was moved horizontally, but as shown in FIG. The same one may be placed at the two bonding points and lowered diagonally.
また、第1囚、第2図のe刃点ζこ至るまでの軌跡は図
中の軌跡に限定されないのはいうまでもない。Further, it goes without saying that the trajectory from the first frame to the e-cutting point ζ in FIG. 2 is not limited to the trajectory shown in the figure.
以上のようにこの発明によりは第2ボンディング点の手
前でワイヤループに張力を加えるようlこキャピラリを
動かTので、ワイヤループが安定し、エツジショートや
曲がりの発生が防止でき、ワイヤボンディングの信頼性
が同上する。As described above, according to the present invention, the capillary is moved to apply tension to the wire loop before the second bonding point, so the wire loop is stabilized, edge shorts and bends can be prevented, and wire bonding is reliable. Same gender.
第1図はこの発明の一実施例によるワイヤボンディング
方法を示す説明図、第2図はこの発明の他の実施例を示
す説明図、第3図は従来のワイヤボンディング方法を示
T説明図、第4図はワイヤループ不良を示す説明図であ
る。
図1こ8いて、(2)はワイヤ、(4)はキャピラリ、
(5]は半導体チップ、(6)はリード、(イ)は第1
ボンディング点、(ハ)は手前点、(ホ)は第2ボンデ
ィング点を示す。
なお、図中、同一符号は同一、または相当部分を示す。
代理人 弁理士 大 岩 増 雄第1図
第2図
@壱
第4図
(a)
(b)S11−ノジ°ショートFIG. 1 is an explanatory diagram showing a wire bonding method according to an embodiment of the present invention, FIG. 2 is an explanatory diagram showing another embodiment of the invention, and FIG. 3 is an explanatory diagram showing a conventional wire bonding method. FIG. 4 is an explanatory diagram showing a wire loop failure. In Figure 1, (2) is a wire, (4) is a capillary,
(5) is the semiconductor chip, (6) is the lead, (a) is the first
Bonding points, (c) shows the front point, and (e) shows the second bonding point. In addition, in the figures, the same reference numerals indicate the same or equivalent parts. Agent: Masuo Oiwa, Patent Attorney Figure 1 Figure 2 @Figure 1 Figure 4 (a)
(b) S11-noji° short
Claims (1)
にワイヤが貫通しZ方向に移動可能なキャピラリにより
、2点間に上記ワイヤを接続するワイヤボデイングにお
いて、第1ボンディング点にワイヤを接続した後に上記
キャピラリがZ方向に上昇降下かつXY方向に移動して
第2ボンディング点に到達する手前で上記キャピラリの
下降を一時停止あるいは減速し、ワイヤをXY方向に引
つぱるような軌跡を描いてワイヤを第2ボンディング点
に接続することを特徴とするワイヤボンディング方法。(1) In a wire body that is placed on a table movable in the XY directions and connects the wires between two points using a capillary through which the wire penetrates inside and is movable in the Z direction, the wire is connected to the first bonding point. After connecting the capillary, the capillary rises and falls in the Z direction and moves in the XY direction, and before reaching the second bonding point, the capillary's descent is temporarily stopped or decelerated, and the wire is pulled in the XY direction. A wire bonding method comprising drawing a wire and connecting the wire to a second bonding point.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62092717A JPS63257237A (en) | 1987-04-14 | 1987-04-14 | Wire bonding |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62092717A JPS63257237A (en) | 1987-04-14 | 1987-04-14 | Wire bonding |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63257237A true JPS63257237A (en) | 1988-10-25 |
Family
ID=14062208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62092717A Pending JPS63257237A (en) | 1987-04-14 | 1987-04-14 | Wire bonding |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63257237A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62140427A (en) * | 1985-12-16 | 1987-06-24 | Toshiba Corp | Wire bonding method |
-
1987
- 1987-04-14 JP JP62092717A patent/JPS63257237A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62140427A (en) * | 1985-12-16 | 1987-06-24 | Toshiba Corp | Wire bonding method |
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