JPS63255336A - Bonding wire - Google Patents
Bonding wireInfo
- Publication number
- JPS63255336A JPS63255336A JP62090130A JP9013087A JPS63255336A JP S63255336 A JPS63255336 A JP S63255336A JP 62090130 A JP62090130 A JP 62090130A JP 9013087 A JP9013087 A JP 9013087A JP S63255336 A JPS63255336 A JP S63255336A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- ball
- copper
- hardness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000010348 incorporation Methods 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000005336 cracking Methods 0.000 description 19
- 238000001953 recrystallisation Methods 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000005482 strain hardening Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
この発明は、半導体素子チップの電極と外部リードを接
続するために使用する銅系ボンディングワイヤの改良に
関するものである。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to improvements in copper-based bonding wires used to connect electrodes of semiconductor element chips and external leads.
「従来の技術」
従来、ＩＣやＬＳＩなどの半導体素子のチップ電極と外
部リードとの結線用のボンディングワイヤは主として金
線が使用されてきたが、金線は極めて高価になる欠点が
ある。また、一部では高価な金線の使用を避けてアルミ
ニウム合金線を使用するようにしているが、このアルミ
ニウム合金線は、極細線への加工性が金線に比較して劣
る欠点があるとともに、半導体素子チップ電極に接続す
るためにボンディングワイヤの先端を溶融させてボール
を作製した際に、ボールの形状が不安定になる欠点があ
る。"Prior Art" Conventionally, gold wires have been mainly used as bonding wires for connecting chip electrodes and external leads of semiconductor devices such as ICs and LSIs, but gold wires have the disadvantage of being extremely expensive. In addition, some people are avoiding the use of expensive gold wire and using aluminum alloy wire, but this aluminum alloy wire has the disadvantage that it is inferior in processability to ultra-fine wire compared to gold wire. However, when a ball is manufactured by melting the tip of a bonding wire for connection to a semiconductor element chip electrode, the shape of the ball becomes unstable.
そこで最近、経済性と導電性および極細線への加工性な
どの点から金線の代替として、銅線及び銅合金線を使用
することが検討されている。Therefore, recently, the use of copper wires and copper alloy wires as a substitute for gold wires has been considered from the viewpoints of economy, conductivity, processability into ultra-fine wires, and the like.
ところで一般にボンディングワイヤには、以下の（１）
〜（５）に記載する特性が要求される。By the way, bonding wires generally have the following (1)
The characteristics described in ~(5) are required.
（１）半導体素子チップの電極に接続するためにボンデ
ィングワイヤの先端を溶融させてボールを作製した際に
、このボールが真珠に近い形状であって、しかも、この
真球状のボールが安定して作製できること。(1) When a ball is made by melting the tip of a bonding wire to connect to the electrode of a semiconductor element chip, the ball has a shape similar to a pearl, and moreover, this true spherical ball is stable. What can be produced.
（２）半導体素子チップの電極にボールを接合する際に
、チップ割れを起こすことなく、かつ、安定した接合強
度が得られること。(2) When bonding the ball to the electrode of the semiconductor element chip, stable bonding strength can be obtained without causing chip cracking.
（３）機械的強度、並びに、高温強度が大きく、ボンデ
ィング時に断線を生じないこと。(3) Mechanical strength and high-temperature strength are high, and wire breakage does not occur during bonding.
（４）熱サイクルによってネック切れ（ボールとボンデ
ィングワイヤとの境界部分の破断）が生じないこと。(4) No neck breakage (breakage at the boundary between the ball and the bonding wire) due to thermal cycling.
（５）塑性度′形による外部リードへの熱圧着及び超音
波ボンディングが可能なこと。(5) Possibility of thermocompression bonding and ultrasonic bonding to external leads due to the degree of plasticity.
「発明が解決しようとする問題点」
そこでこのような要求がなされている背景から、本願発
明者らは、前記（り〜（５）に記載した諸特性を満足す
る銅系ボンディングワイヤの開発を目的として、タフピ
ッチ銅線およびタフピッチ銅を基に製造した各種銅線、
あるいは、純度９９．９９％以上の高純度銅線を用いて
実験を繰り返し行った。この結果、タフピッチ銅線およ
びタフピッチ銅合金線にあっては、半導体素子チップ電
極にボールを接合する際、チップ割れが度々発生した。"Problems to be Solved by the Invention" Against this background, the inventors of the present application sought to develop a copper-based bonding wire that satisfies the characteristics listed in (5) above. For the purpose, tough pitch copper wire and various copper wires manufactured based on tough pitch copper,
Alternatively, the experiment was repeated using a high-purity copper wire with a purity of 99.99% or higher. As a result, in the case of tough pitch copper wire and tough pitch copper alloy wire, chip cracking frequently occurred when a ball was bonded to a semiconductor element chip electrode.
一方、高純度銅線にあっては、チップ割れなどの問題は
生じないものの、熱サイクルによるネック切れが度々発
生した。On the other hand, with high-purity copper wire, although problems such as chip cracking did not occur, neck breakage frequently occurred due to thermal cycling.
本発明は、前述の背景に鑑み、前記実験を繰り返し行っ
て得られた知見を店になされたらので、電極チップの接
続用に形成されろボールの硬度を適度な硬度に制御して
チップ割れを無くするとともに、熱サイクルによるネッ
ク切れを防止することができるようにしたボンディング
ワイヤを提供ずろことを目的とする。In view of the above-mentioned background, the present invention was made based on the knowledge obtained by repeatedly conducting the above-mentioned experiments, and the hardness of the ball formed for connecting the electrode chip is controlled to an appropriate hardness to prevent chip cracking. It is an object of the present invention to provide a bonding wire which can prevent neck breakage due to thermal cycles.
「問題点を解決するための手段」
本発明は前記問題点を解決するために、純度９９．９９
％以上の高純度銅に、０．００３〜０．０２％のＰと０
．００２〜０．０１５％のＺｒを添加してなる銅合金か
ら形成したものである。"Means for Solving the Problems" In order to solve the above-mentioned problems, the present invention provides
% or more of high purity copper, 0.003 to 0.02% of P and 0
．． 0.002 to 0.015% of Zr is added to the copper alloy.
「作用」
本発明においては、純度９９．９９％以−りの高純度銅
を用いることによってボール硬度の低い銅合金線とし、
チップ割れを防止する。"Function" In the present invention, by using high-purity copper with a purity of 99.99% or higher, a copper alloy wire with low ball hardness is obtained.
Prevents chip cracking.
また、元素Ｐは、銅線の再結晶温度を高くして結晶粒の
粗大化を進行さ仕ないことから、元素Ｐの添加により熱
サイクルによるネック切れの原因である結晶粒界破断を
防止できる。しかしながら、再結晶温度を高める目的で
Ｐのみを添加すると、ボール硬度が高くなり、加工硬化
能も向上するためにチップ割れを生じるおそれがある。In addition, since element P increases the recrystallization temperature of the copper wire and prevents the coarsening of crystal grains, the addition of element P can prevent grain boundary rupture, which is the cause of neck breakage due to thermal cycles. . However, if only P is added for the purpose of increasing the recrystallization temperature, the ball hardness increases and the work hardening ability also improves, which may cause chip cracking.
そこで本発明ではＰに加えてＺｒを添加することによっ
てチップ割れを防止する。Ｚｒを添加することによりチ
ップ割れを防止できるのは、胴中の酸素や硫黄をＺｒが
捕捉してボールを軟化させ、加工硬化能を低下させるた
めと考えられる。しかしながらＺｒ含有量が過剰になる
とＺｒ自身がＰと同様な効果を示しチップ割れを生じ易
（する。Therefore, in the present invention, chip cracking is prevented by adding Zr in addition to P. The reason that chip cracking can be prevented by adding Zr is thought to be that Zr captures oxygen and sulfur in the shell, softens the ball, and reduces work hardening ability. However, when the Zr content becomes excessive, Zr itself exhibits the same effect as P and tends to cause chip cracking.
前記Ｐの含有量を前記範囲に限定したのは、０゜００３
％未満では再結晶温度を高める効果が不足するためであ
り、０．０２％より高い含有量では、ボール硬度が高く
なり過ぎてＺｒ含有量を調節してもチップ割れを生じる
ためである。一方、Ｚｒの含Ｗ量を前記範囲に限定した
のは、０．００２％未満ではボール硬度を低くする効果
が現れないためであり、０．０１５％より高い含有量で
はＰ含有量を調整してもチップ割れを生じるためである
。The content of P was limited to the range of 0°003
This is because if the Zr content is less than 0.02%, the effect of increasing the recrystallization temperature is insufficient, and if the Zr content is higher than 0.02%, the ball hardness becomes too high and chip cracking occurs even if the Zr content is adjusted. On the other hand, the reason why the W content of Zr is limited to the above range is that if it is less than 0.002%, the effect of lowering the ball hardness will not appear, and if the content is higher than 0.015%, the P content cannot be adjusted. This is because chip cracking may occur even if the
「実施例」
第１表に示す成分の各銅合金を真空鋳造した後に、線引
加工と中間熱処理を繰り返して直径２５μｍの銅系ボン
ディングワイヤを複数作製した。"Example" After vacuum casting each copper alloy having the components shown in Table 1, wire drawing and intermediate heat treatment were repeated to produce a plurality of copper bonding wires each having a diameter of 25 μm.
これらのボンディングワイヤについて、各々の常温強度
とボールの硬度とチップ割れの有無と再結晶温度を測定
した結果を第２表に示す。なお、ボンディングは熱圧着
と超音波併用方式によって行ったが、第１表に示すＮｏ
１＝Ｎｏ６の各試料は容易にウェッジボンディングする
ことができた。Table 2 shows the results of measuring the room temperature strength, ball hardness, presence or absence of chip cracking, and recrystallization temperature for these bonding wires. Note that bonding was performed using a combination of thermocompression bonding and ultrasonic waves, but no.
Each sample of No. 1=No. 6 could be easily wedge bonded.
（以下、余白）
第１表
第２表
前記試料Ｎｏ１＝Ｎｏ６は、本発明で限定した組成を有
する合金試料であるが、これらの試料は第２表に示すよ
うにボール硬度が適正な値を示し、チップ割れを生じる
こともなく、しかも、再結晶温度が３００℃以上の高い
値を示している。(Hereinafter, blank spaces) Table 1 Table 2 Samples No. 1 and No. 6 are alloy samples having compositions limited by the present invention, but as shown in Table 2, these samples have ball hardness of appropriate values. It shows no chip cracking, and the recrystallization temperature is as high as 300°C or higher.
これに対し、試料Ｎｏ７〜Ｎｏｌ ５は本発明で限定し
た範囲外の組成を有する合金試料である。試料Ｎｏ７と
Ｎｏ８はＰの含有量を本発明の限定範囲より少なくした
試料であるが、第２表に示すように再結晶温度が３００
℃よりかなり低くなっている。また、試料Ｎｏ９はＰの
含有量を本発明の限定範囲より小さくするとともにＺｒ
の含有量を本発明の範囲より多くした試料であるが、ボ
ール硬度が高く、チップ割れを起こしている。試料Ｎ。On the other hand, samples No. 7 to No. 5 are alloy samples having compositions outside the range defined by the present invention. Samples No. 7 and No. 8 are samples in which the P content is lower than the limited range of the present invention, but as shown in Table 2, the recrystallization temperature is 300.
It is considerably lower than ℃. In addition, sample No. 9 has a P content smaller than the limited range of the present invention and Zr
Although the sample had a higher content than the range of the present invention, the ball hardness was high and chip cracking occurred. Sample N.
ｌＯはＺｒの含有量を本発明の範囲より小さくした試料
であるが、チップ割れを起こすとともに再結晶温度が３
００℃以下になっている。試料Ｎ０１１はＺｒの含有量
を本発明の範囲より多くした試料であるが、ボール硬度
が高く、チップ割れを起こしている。試料Ｎｏｌ ２と
Ｎｏｔ ３はＰの含有量を本発明の範囲より多くした試
料であるが、いずれらチップ割れを起こしている。試料
Ｎｏｔ ４は■）の含有量を本発明の範囲より大きくし
た試料であるが、ボール硬度が高くチップ割れを起こし
ている。試料Ｎｏｌ ５は純銅からなる試料であるが、
再結晶温度が極めて低くなっている。1O is a sample in which the Zr content is lower than the range of the present invention, but it causes chip cracking and the recrystallization temperature reaches 3.
The temperature is below 00℃. Sample No. 011 is a sample in which the Zr content is higher than the range of the present invention, but the ball hardness is high and chip cracking occurs. Samples No. 2 and No. 3 were samples in which the P content was higher than the range of the present invention, but both caused chip cracking. Sample No. 4 is a sample in which the content of (1) is larger than the range of the present invention, but the ball hardness is high and chip cracking occurs. Sample No. 5 is a sample made of pure copper,
Recrystallization temperature is extremely low.
以上の測定結果に鑑みて本発明においては、Ｐ含有ｆｉ
ｔを０．００３〜０．０２％に限定し、Ｚｒ含有量を０
．００２〜０．０１５％に限定した。In view of the above measurement results, in the present invention, P-containing fi
t is limited to 0.003 to 0.02%, and the Zr content is 0.
．． It was limited to 0.002% to 0.015%.
「発明の効果」
以上説明したように本発明のボンディングワイヤは、再
結晶温度を高めるＰを特別な爪含有さ仕た銅合金からな
るものであり、結晶粒の粗大化を阻止できるために、熱
サイクルによるネック切れの原因である結晶粒界破断を
阻止することができ、ボンディング時のネック切れを無
くすることができる。また、Ｐの添加に加えてＺｒを特
別な量含汀させることによりボール硬度と加工硬化能を
適度に制御したために、ボンディング時の断線とチップ
割れを無くすることができろボンディングワイヤを得る
ことができる。"Effects of the Invention" As explained above, the bonding wire of the present invention is made of a copper alloy specially treated with P that increases the recrystallization temperature, and since coarsening of crystal grains can be prevented, Grain boundary rupture, which is the cause of neck breakage due to thermal cycles, can be prevented, and neck breakage during bonding can be eliminated. In addition, by adding a special amount of Zr in addition to the addition of P, the ball hardness and work hardening ability are appropriately controlled, thereby eliminating wire breakage and chip cracking during bonding. Can be done.
Claims (1)
銅に、０．００３〜０．０２％のＰと０．００２〜０．
０１５％のＺｒを添加してなる銅合金からなることを特
徴とするボンディングワイヤ。High-purity copper with a purity of 99.99% (weight%, same hereinafter) or higher, 0.003-0.02% P and 0.002-0.02% P.
A bonding wire characterized in that it is made of a copper alloy containing 0.15% Zr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62090130A JPS63255336A (en) | 1987-04-13 | 1987-04-13 | Bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62090130A JPS63255336A (en) | 1987-04-13 | 1987-04-13 | Bonding wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63255336A true JPS63255336A (en) | 1988-10-21 |
Family
ID=13989928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62090130A Pending JPS63255336A (en) | 1987-04-13 | 1987-04-13 | Bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63255336A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007094300A1 (en) * | 2006-02-13 | 2007-08-23 | Mitsubishi Shindoh Co., Ltd. | Aluminum bronze alloy as raw material for semi-molten alloy casting |
| JP2009001850A (en) * | 2007-06-20 | 2009-01-08 | Hitachi Cable Ltd | Copper alloy material |
-
1987
- 1987-04-13 JP JP62090130A patent/JPS63255336A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007094300A1 (en) * | 2006-02-13 | 2007-08-23 | Mitsubishi Shindoh Co., Ltd. | Aluminum bronze alloy as raw material for semi-molten alloy casting |
| JP2009001850A (en) * | 2007-06-20 | 2009-01-08 | Hitachi Cable Ltd | Copper alloy material |
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