JPS63238235A - Bonding wire - Google Patents

Bonding wire

Info

Publication number
JPS63238235A
JPS63238235A JP62072613A JP7261387A JPS63238235A JP S63238235 A JPS63238235 A JP S63238235A JP 62072613 A JP62072613 A JP 62072613A JP 7261387 A JP7261387 A JP 7261387A JP S63238235 A JPS63238235 A JP S63238235A
Authority
JP
Japan
Prior art keywords
bonding
copper
core wire
purity
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62072613A
Other languages
Japanese (ja)
Inventor
Akito Kurosaka
昭人 黒坂
Haruo Tominaga
晴夫 冨永
Zenjuro Yashiro
矢城　善十郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Priority to JP62072613A priority Critical patent/JPS63238235A/en
Publication of JPS63238235A publication Critical patent/JPS63238235A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45647—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)

Abstract

PURPOSE:To provide a bonding wire in which neck cutting by a heat cycle is prevented by forming the covered zone of high pure copper on the outer circumference of the core wire of a copper alloy incorporated with limited ratio of Zr. CONSTITUTION:The core wire zone 1 is formed from the copper alloy in which the recrystallization temp. is increased by incorporating 20-200wt.ppm Zn into high pure copper having >=99.99wt.% purity. The outer circumference of said core wire 1 is covered by the covered zone 2 of the high pure copper having >=99.99% purity to form the bonding wire 1. The concn. of the elements involved in the copper alloy of the core wire zone 1 is dissolved and diluted in the case of forming a ball by fusing the tips together at the time of bonding. The hardness of the ball is therefore regulated to the suitable value and chip cracks can be prevented. The thermocompression bonding and ultrasonic compression bonding with an outer lead can be easily executed as well since the soft high pure copper is used for the covered zone 2.

Description

【発明の詳細な説明】 「産業上の利用分野」 この発明は、半導体素子チップの電極と外部リードを接
続するために使用する銅系ボンディングワイヤの改良に
関するものである。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to improvements in copper-based bonding wires used to connect electrodes of semiconductor element chips and external leads.

「従来の技術」 従来、ＩＣやＬＳＩなどの半導体素子のチップ電極と外
部リードとの結線用のボンディングワイヤは、主として
金線が使用されてきたが、金線は極めて高価になる欠点
がある。そこで最近、経済性と導電性の点から金線の代
替として、銅線及び銅合金線を使用することか検討され
ている。"Prior Art" Conventionally, gold wires have been mainly used as bonding wires for connecting chip electrodes and external leads of semiconductor devices such as ICs and LSIs, but gold wires have the disadvantage of being extremely expensive. Therefore, from the viewpoint of economy and conductivity, the use of copper wire and copper alloy wire as an alternative to gold wire has recently been considered.

ところで一般にボンディングワイヤには、以下の（１）
〜（５）に記載する特性が要求される。By the way, bonding wires generally have the following (1)
The characteristics described in ~(5) are required.

（１）半導体素子チップの電極に接続するためにボンデ
ィングワイヤの先端を溶融させてボールを作製した際に
、このボールが真球に近い形状であって、しかも、この
真球状のボールが安定して作製できること。(1) When a ball is made by melting the tip of a bonding wire to be connected to an electrode of a semiconductor element chip, the ball has a shape close to a true sphere, and moreover, this true spherical ball is stable. It can be manufactured by

（２）半導体素子チップの電極にボールを接合する際に
、チップ割れを起こすことなく、かつ、安定した接合強
度が得られること。(2) When bonding the ball to the electrode of the semiconductor element chip, stable bonding strength can be obtained without causing chip cracking.

（３）機械的強度、並びに、高温強度が大きく、ボンデ
ィング時に断線を生じないこと。(3) Mechanical strength and high-temperature strength are high, and wire breakage does not occur during bonding.

（４）熱サイクルによってネック切れ（ボールとボンデ
ィングワイヤとの境界部分の破断）が生じないこと。(4) No neck breakage (breakage at the boundary between the ball and the bonding wire) due to thermal cycling.

（５）塑性変形による外部リードへの熱圧＠渋び超音波
ボンディングが可能なこと。(5) Possibility of thermal pressure @ Shibuki ultrasonic bonding to external leads due to plastic deformation.

「発明が解決しようとする問題点」 そこでこのような要求がなされている背景から、本願発
明者らは、前記（１）〜（５）に記載した諸特性を満足
する銅系ボンディングワイヤの開発を目的として、純度
９９．９９％以上の高純度銅線、あるいは、この高純度
銅線を基に製造した各種銅合金線を用いて実験を繰り返
し行った。この結果、高純度銅線にあっては、チップ割
れなどの問題は生じないものの、熱サイクルによるネッ
ク切れが度々発生した。一方、銅合金線にあっては、ネ
ック切れなどの問題は生じなかったが、高純度銅線に比
較してボールが硬いためにチップ割れが度々生じ、外部
リードとのウェッジボンディングが高純度銅線よりも困
難であった。"Problems to be Solved by the Invention" In light of these demands, the inventors of the present application have developed a copper-based bonding wire that satisfies the characteristics described in (1) to (5) above. For this purpose, experiments were repeatedly conducted using high-purity copper wires with a purity of 99.99% or higher, or various copper alloy wires manufactured based on these high-purity copper wires. As a result, although high-purity copper wires do not suffer from problems such as chip cracking, they often break necks due to thermal cycling. On the other hand, with copper alloy wire, no problems such as neck breakage occurred, but chips were often cracked due to the ball being harder than high-purity copper wire, and wedge bonding with external leads was made using high-purity copper wire. It was more difficult than the line.

本発明は、前述の背景に鑑み、前記実験を繰り返し行っ
て得られた知見を基になされたもので、熱サイクルによ
るネック切れを防止することができ、電極チップの接°
続用に形成されるボールの硬度を制御できるようにして
チップ割れを無くするとともに、外部リードとの熱圧着
および超音波圧着を容易に行うことができるようにした
ボンディングワイヤを提供することを目的とする。In view of the above-mentioned background, the present invention was made based on the knowledge obtained by repeatedly conducting the above-mentioned experiments, and it is possible to prevent neck breakage due to thermal cycles and improve the connection of electrode tips.
The purpose of the present invention is to provide a bonding wire that eliminates chip cracking by controlling the hardness of the ball formed during continuous use, and that also allows easy thermocompression bonding and ultrasonic compression bonding with external leads. shall be.

「問題点を解決するた砂の手段」 本発明は、前記問題点を解決するために、純度９９．９
９％以上の高純度銅に、高純度銅の再結晶温度を高める
元素としてＺｒを２０〜２００重ｆｆｉ　ｐｐｍ含有さ
せてなる銅合金から芯線部を形成し、この芯線部の外周
に９９．９９％以上の高純度銅からなる被覆部を形成し
てなるものである。"Sand Means for Solving the Problems" In order to solve the above-mentioned problems, the present invention provides sand with a purity of 99.9.
A core wire portion is formed from a copper alloy made of high-purity copper of 9% or more and 20 to 200 ppm of Zr as an element that increases the recrystallization temperature of high-purity copper. % or more of high-purity copper.

「実施例」 図面は、本発明の一実施例のボンディングワイヤＡの断
面構造を示すもので、このボンディングワイヤＡは芯線
部１を被覆部２で覆ってなる構造を有している。Embodiment The drawing shows a cross-sectional structure of a bonding wire A according to an embodiment of the present invention, and this bonding wire A has a structure in which a core wire portion 1 is covered with a covering portion 2.

前記芯線部１は、純度９９．９９％以上の高純度銅に、
その再結晶温度を高める元素としてＺｒを２０〜２０’
Ｇ重量ｐｐｍ含有させた銅合金から構成されたワイヤで
ある。ここで、純度９９．９９％以上の高純度銅を用い
るのは、わずかでもボール硬度の低い銅合金を得るため
である。更に、銅合金中に含有させるＺｒの濃度を前記
範囲に限定したのは、Ｚｒの含有量が２ｏ重ｆｆｉ　ｐ
ｐｍ未満では、銅合金の再結晶温度を高める効果が現れ
ないためであり、銅合金中に含有させるＺｒの濃度が２
゜０重１４　ｐｐｍより高い濃度では、適度なボール硬
度を得るために、芯線部の比率を少なくする必要が生じ
、結果として芯線部が細くなり過ぎてネック切れを生じ
るためである。The core wire portion 1 is made of high purity copper with a purity of 99.99% or more,
Zr is used as an element to increase the recrystallization temperature by 20~20'
The wire is made of a copper alloy containing ppm by weight of G. The reason why high-purity copper with a purity of 99.99% or more is used here is to obtain a copper alloy whose ball hardness is even slightly low. Furthermore, the reason why the concentration of Zr contained in the copper alloy is limited to the above range is that the Zr content is 2o heavy ffi p
This is because if the concentration of Zr contained in the copper alloy is less than 2 pm, the effect of increasing the recrystallization temperature of the copper alloy will not appear.
This is because if the concentration is higher than 14 ppm, it becomes necessary to reduce the ratio of the core wire portion in order to obtain an appropriate ball hardness, and as a result, the core wire portion becomes too thin and neck breakage occurs.

また、前記披Ｎ、部２は純度９９．９９％以上の高純度
銅からなる。ここで、被覆部２の純度をこのような値に
設定したのは、９９．９９％未満の純度の銅線では、ボ
ール硬度が銅合金線と同等になって適度なボール硬度に
制御することができないためである。Further, the above-mentioned portion 2 is made of high-purity copper with a purity of 99.99% or more. Here, the reason why the purity of the covering part 2 is set to such a value is that with a copper wire having a purity of less than 99.99%, the ball hardness will be equal to that of a copper alloy wire, so that the ball hardness can be controlled to an appropriate level. This is because it is not possible.

なお、ボンディングワイヤＡにおいては、芯線部目こ対
する被覆部２の被覆率を１０〜９０％の範囲に設定する
ことが好ましい。この限定理由は、被覆部２の比率が９
０％を越えた値となるとネック切れを生じ易く、１０％
を下回る値ではチップ割れを生じ易いためである。In addition, in the bonding wire A, it is preferable to set the coverage ratio of the covering part 2 to the core wire part in the range of 10 to 90%. The reason for this limitation is that the ratio of the covering part 2 is 9.
If the value exceeds 0%, neck breakage is likely to occur, and 10%
This is because chip cracking is likely to occur if the value is less than .

前記構造のボンディングワイヤＡにあっては、芯線部１
に再結晶温度の高い銅合金を用いているために、熱サイ
クルによるネック切れを防止することができる。また、
ボンディング時にボンディングワイヤＡの先端を溶融さ
せてボールを形成する場合、芯線部Ｉに含有されている
元素の濃度を被覆部２の高純度銅が希釈して適度のボー
ル硬度に制御するために、チップ割れを阻止することが
できる。なお、ボンディングワイヤＡにあっては、被覆
部乏に高純度銅を用いているために、外部リードとのウ
ェッジボンディングも容易に実施できる。In the bonding wire A having the above structure, the core wire portion 1
Since a copper alloy with a high recrystallization temperature is used, it is possible to prevent neck breakage due to thermal cycles. Also,
When a ball is formed by melting the tip of the bonding wire A during bonding, the high-purity copper of the coating part 2 dilutes the concentration of elements contained in the core wire part I to control the ball hardness to an appropriate level. Chip cracking can be prevented. Note that since the bonding wire A uses high-purity copper for the covering portion, wedge bonding with an external lead can be easily performed.

「製造例」 第１表に示す成分の銅合金心線に、第１表に示す割合で
高純度銅を被覆し、更に、線引加工と中間熱処理を繰り
返し施して直径３０μｍの銅系ボンディングワイヤを複
数作製した。なお、第１表に示す各試料において、被覆
部は純度９９．９９９％の銅から構成される装置 第１表 第１表に示す各ボンディングワイヤについて、その機械
特性とボンディング特性について測定した。その測定結
果を第２表に示す。なお、熱圧着と超音波併用方式によ
ってボンディングを行ったところ、試料Ｎｏ１＝Ｎｏ９
は容易にウェッジボンディングすることができた。また
、第２表において、ボール形状が「良」とは、ボンディ
ングワイヤの先端を溶融させて形成したボールの形状が
真球に近い状態、「変形」とはボール形状が真球に対し
ていびつなｍ１合が大きい状態を示している。"Manufacturing Example" A copper alloy core wire with the components shown in Table 1 is coated with high-purity copper in the proportions shown in Table 1, and then repeatedly subjected to wire drawing and intermediate heat treatment to create a copper-based bonding wire with a diameter of 30 μm. I made several. In each sample shown in Table 1, the coating portion was made of copper with a purity of 99.999%.The mechanical properties and bonding properties of each bonding wire shown in Table 1 were measured. The measurement results are shown in Table 2. In addition, when bonding was performed using a combination of thermocompression bonding and ultrasonic waves, sample No. 1 = No. 9
could be easily wedge bonded. In addition, in Table 2, "good" ball shape means that the shape of the ball formed by melting the tip of the bonding wire is close to a true sphere, and "deformed" means that the ball shape is distorted from a true sphere. This shows a state where m1 is large.

第２表において、試料Ｎｏ２〜Ｎｏ６は、本発明で限定
した合金成分で、被覆率を１０〜９０％の範囲内として
製造した試料であり、いずれも、真球に近いボール形状
を有し、チップ割れを起こすことなく接合ができ、芯線
部ｌの再結晶温度も高い値を示している。そして、試料
Ｎｏ２〜Ｎｏ６はいずれも高温強度が高く、ボール硬度
も適正値であった。In Table 2, Samples No. 2 to No. 6 are samples manufactured with the alloy components limited in the present invention with a coverage within the range of 10 to 90%, and all have ball shapes close to true spheres. Bonding was possible without chip cracking, and the recrystallization temperature of the core wire portion l also showed a high value. Samples No. 2 to No. 6 all had high high-temperature strength and ball hardness at appropriate values.

また、試料Ｎｏｌ、Ｎｏ２は各々芯線部ｌのＺｒ含有量
を２０重量ｐｐｍとし、試料Ｎｏｌは被覆部２の被覆率
を５％、試料Ｎｏ２は被覆部２の被覆率を１０％とした
試料であるが、試料Ｎｏｔは試料Ｎｏ２に比較してボー
ル硬度が高く、チップ割れを生じている。一方、試料Ｎ
ｏ６、Ｎｏ７は各々被覆部２の被覆率を９０％とし、試
料Ｎｏ６は芯線部１のＺｒ含有量を２（１０重遣ρｐｍ
、試料Ｎｏ７は芯線部ｌのＺｒ含有量を３００重ｌｉｔ
　ｐｐｍとした試料であるが、試料Ｎｏ７は試料Ｎｏ６
に比較してボール硬度が高く、チップ割れを生じ、ボー
ル形状が真球から外れた形状となっている。In addition, samples No. 1 and No. 2 each have a Zr content of 20 ppm by weight in the core wire portion l, sample No. 1 has a coverage rate of coating portion 2 of 5%, and sample No. 2 has a coverage percentage of coating portion 2 of 10%. However, sample No. 2 had higher ball hardness than sample No. 2, and chip cracking occurred. On the other hand, sample N
Sample No. 6 and No. 7 each had a coating rate of 90% in the coating portion 2, and sample No. 6 had a Zr content of 2 (10 weight ρpm) in the core wire portion 1.
, Sample No. 7 has a Zr content of 300 liters in the core wire portion l.
ppm, but sample No. 7 is sample No. 6.
The ball hardness is higher than that of the previous model, causing chip cracks and the ball shape deviating from a true sphere.

ところで、試料Ｎｏ８は、芯線部１のＺｒ含有量を３０
０重量　ｐｐｍ、被覆部２の被覆率を９５％とした試料
であるが、試料Ｎｏ２〜Ｎｏ６に比較して高温強度が低
い。また、被覆部２を構成する高純度銅からボンディン
グワイヤを構成した試料Ｎ０９と芯線部ｌを構成する銅
合金からボンディングワイヤを構成した試料Ｎｏｔ　０
１Ｎｏｔ　１において、試料Ｎ　ｏ　９と試料Ｎｏｌ　
Ｏにあっては、再結晶温度が低く、試料Ｎｏｌ　１にあ
っては、ボール硬度が高く、チップ割れを生じている。By the way, in sample No. 8, the Zr content in the core wire portion 1 was set to 30
Although this is a sample with 0 weight ppm and a coverage rate of coating portion 2 of 95%, its high temperature strength is lower than that of samples No. 2 to No. 6. In addition, sample No. 09, in which the bonding wire was formed from high-purity copper forming the covering portion 2, and sample No. 0, in which the bonding wire was formed from a copper alloy forming the core wire portion l.
In 1Not 1, sample No. 9 and sample No.
In case of O, the recrystallization temperature is low, and in sample No. 1, the ball hardness is high and chip cracking occurs.

以上の測定結果を鑑みて、被覆部２の被覆率は１０〜９
０％の範囲が好ましいことが判明した。Considering the above measurement results, the coverage rate of the covering part 2 is 10 to 9.
It has been found that a range of 0% is preferred.

ところで、被覆部２の被覆率を１０〜９０％の範囲に規
定した試料Ｎｏ２〜Ｎｏ７において、Ｚｒ含有率を２０
．３０重量ｐｐｒＱとした試料Ｎｏ２．Ｎ。By the way, in samples No. 2 to No. 7 in which the coverage of the coating portion 2 was defined in the range of 10 to 90%, the Zr content was set to 20%.
．． Sample No. 2 with 30 weight pprQ. N.

３にあっては、他の試料Ｎｏ４〜Ｎｏ７に比較して芯線
部ｌの再結晶温度が若干低下し、Ｚｒ含有量を１０重量
ｐｐｍとした試料ＮｏＩ　Ｏにあっては、芯線部ｌを１
００％としても再結晶温度が著しく低下している。更に
、被覆部２の被覆率を１０〜９０％の範囲に規定した試
料Ｎｏ２〜Ｎｏ７であっても、Ｚｒ含有量を３００重量
ｐｐｍとした試料Ｎｏ７にあってはチップ割れを生じて
いる。In sample No. 3, the recrystallization temperature of the core wire portion l was slightly lower than that of other samples No. 4 to No. 7, and in sample No.
Even at 00%, the recrystallization temperature is significantly lower. Furthermore, even in samples No. 2 to No. 7 in which the coverage of the coating portion 2 was defined in the range of 10 to 90%, chip cracking occurred in sample No. 7 in which the Zr content was 300 ppm by weight.

以上の結果から鑑みて本発明においては、Ｚｒ含有量を
２０〜２００重量ｐｐ＋＋＋の範囲に限定した。In view of the above results, in the present invention, the Zr content is limited to a range of 20 to 200 pp+++ by weight.

「発明の効果」 以上説明したように本発明は、芯線部にＺｒを２０〜２
００重量％含有させた再結晶温度の高い銅合金を用いて
いるために、高純度銅からなる従来のボンディングワイ
ヤにおいて問題となっていた熱サイクルによるネック切
れを防止できる効果がある。"Effects of the Invention" As explained above, the present invention has the advantage of adding 20 to 2 Zr to the core wire.
Since a copper alloy containing 0.00% by weight and a high recrystallization temperature is used, it is effective in preventing neck breakage due to thermal cycling, which has been a problem with conventional bonding wires made of high-purity copper.

また、芯線部を高純度銅からなる被覆部で覆っているた
めに、ボンディング時に先端を溶融させてボールを形成
する場合、芯線部の銅合金に含有された元素の濃度を披
１部の高純度銅が溶融して希釈するために、ボールの硬
度を適度な値に制御することができ、これによってチッ
プ割れを防止できる効果がある。In addition, since the core wire is covered with a sheath made of high-purity copper, when the tip is melted to form a ball during bonding, the concentration of elements contained in the copper alloy of the core wire can be Since the pure copper is melted and diluted, the hardness of the ball can be controlled to an appropriate value, which has the effect of preventing chip cracking.

更に、銅合金に比較して軟質の高純度銅を被覆部に用い
ているので、外部リードとの熱圧着及び超音波圧着を容
易にできる効果がある。Furthermore, since high-purity copper, which is softer than copper alloy, is used for the covering portion, thermocompression bonding and ultrasonic compression bonding with external leads can be easily performed.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は、本発明の一実施例を示す断面図である。 Ａ・・・・・・ボンディングワイヤ、 ■・・・・・・芯線部、　　　　２・・・・・・被覆部
。The drawing is a sectional view showing an embodiment of the present invention. A...Bonding wire, ■...Core wire portion, 2...Coating portion.

Claims (1)

【特許請求の範囲】[Claims] 　純度９９．９９％（重量％、以下同じ）以上の高純度
銅に、この高純度銅の再結晶温度を高める元素としてＺ
ｒを２０〜２００重量ｐｐｍ含有させてなる銅合金から
芯線部を形成し、この芯線部の外周に純度９９．９９％
以上の高純度銅からなる被覆部を形成してなるボンディ
ングワイヤ。Z is an element that increases the recrystallization temperature of high-purity copper with a purity of 99.99% (wt%) or higher (the same applies hereinafter).
A core wire portion is formed from a copper alloy containing 20 to 200 ppm by weight of
A bonding wire formed with a coating made of the above-mentioned high-purity copper.
JP62072613A 1987-03-26 1987-03-26 Bonding wire Pending JPS63238235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62072613A JPS63238235A (en) 1987-03-26 1987-03-26 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62072613A JPS63238235A (en) 1987-03-26 1987-03-26 Bonding wire

Publications (1)

Publication Number Publication Date
JPS63238235A true JPS63238235A (en) 1988-10-04

Family

ID=13494415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62072613A Pending JPS63238235A (en) 1987-03-26 1987-03-26 Bonding wire

Country Status (1)

Country Link
JP (1) JPS63238235A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077005A (en) * 1989-03-06 1991-12-31 Nippon Mining Co., Ltd. High-conductivity copper alloys with excellent workability and heat resistance

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077005A (en) * 1989-03-06 1991-12-31 Nippon Mining Co., Ltd. High-conductivity copper alloys with excellent workability and heat resistance

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