JPH0479246A - Bonding wire for semiconductor element - Google Patents
Bonding wire for semiconductor elementInfo
- Publication number
- JPH0479246A JPH0479246A JP2192802A JP19280290A JPH0479246A JP H0479246 A JPH0479246 A JP H0479246A JP 2192802 A JP2192802 A JP 2192802A JP 19280290 A JP19280290 A JP 19280290A JP H0479246 A JPH0479246 A JP H0479246A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- wire
- strength
- neck part
- busbar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims abstract description 19
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 10
- 229910001260 Pt alloy Inorganic materials 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 11
- 238000000576 coating method Methods 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 229910052709 silver Inorganic materials 0.000 abstract description 5
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 238000005491 wire drawing Methods 0.000 abstract description 4
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract description 2
- 238000009835 boiling Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
Classifications
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Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は半導体素子のチップ電極と外部リードとを接続
するために用いられる半導体素子用ボンディング線、特
にボールボンディング法に好適なものに関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a bonding wire for a semiconductor device used for connecting a chip electrode of a semiconductor device and an external lead, and particularly to a bonding wire suitable for the ball bonding method.
〈従来の技術〉
従来、この種の半導体素子用ボンディング線として例え
ばキャピラリーの先端から垂下したAU線の先端を電気
トーチにより溶融させてボールを形成し、このボールを
半導体素子のチップ電極に圧着して接着せしめ、その後
ループ状に外部リードまで導いて該外部リードに圧着・
切断することにより、チップ電極と外部リードを接続さ
せたものがある。<Prior art> Conventionally, this type of bonding wire for semiconductor devices has been used, for example, by melting the tip of an AU wire hanging from the tip of a capillary with an electric torch to form a ball, and then press-bonding this ball to the chip electrode of a semiconductor device. Then, lead it in a loop shape to the external lead and crimp/bond it to the external lead.
Some devices have chip electrodes and external leads connected by cutting.
〈発明が解決しようとする課題〉
しかし乍ら、このような従来の半導体素子用ボンディン
グ線ではボール形成時にこのボール直上のネック部が熱
影響を受けて線材中に蓄積された応力が緩和されるため
、熱影響を受けない母線に比べ機械的強さが低下し、そ
の結果ボンディング作業中にネック部が破断したりワイ
ヤ倒れやワイヤ垂れが発生すると共に、製品の温度サイ
クル寿命試験において繰り返し温度変化により熱膨張・
収縮して発生する応力がネック部に集中し、ネック部の
破断が発生し易いという問題がある。<Problems to be Solved by the Invention> However, in such conventional bonding wires for semiconductor devices, when the ball is formed, the neck directly above the ball is affected by heat, and the stress accumulated in the wire is alleviated. As a result, the mechanical strength is lower than that of a bus bar that is not affected by heat, resulting in neck breakage, wire collapse, and wire sag during bonding operations, as well as repeated temperature changes during product temperature cycle life tests. Thermal expansion due to
There is a problem in that the stress generated by contraction concentrates on the neck portion, making it easy for the neck portion to break.
一方、近年LSIの高密度実装化に伴って多ピン化傾向
が強まる中、ボンディング線を細線化してボンディング
ピッチを短縮することが要求されている。On the other hand, in recent years, as LSIs have become more densely packaged and the number of pins has increased, there has been a demand for thinner bonding lines to shorten the bonding pitch.
しかし、前述のボンディング線ではネック部が破断し易
いためにその線径を細くすることができず、上記要求を
満足し得ないという問題もある。However, the above-mentioned bonding wire has the problem that the neck portion is easily broken, so that the diameter of the wire cannot be made thinner, and the above-mentioned requirements cannot be satisfied.
本発明は斯る従来事情に鑑み、ネック部の強さを母線と
同等以上にすることを目的とする。In view of such conventional circumstances, the present invention aims to make the strength of the neck portion equal to or higher than that of the generatrix.
〈課題を解決するための手段〉
上記課題を解決するために本発明が講する技術的手段は
、高純度Pt又はPt合金からなる芯線の外周面に高純
度Ag又はAg合金からなる被覆材を被覆したことを特
徴とするものである。<Means for Solving the Problems> The technical means taken by the present invention to solve the above problems is to apply a coating material made of high purity Ag or Ag alloy to the outer peripheral surface of the core wire made of high purity Pt or Pt alloy. It is characterized by being coated.
そして、高純度Ptとは不可避不純物を含む99.95
%以上のものを用い、Pt合金とは高純度PtにPd(
8at%以下) 、Au (2at%以下) 、Be、
Cu。And, high purity Pt is 99.95% containing unavoidable impurities.
% or more, Pt alloy is high purity Pt plus Pd (
(8 at% or less), Au (2 at% or less), Be,
Cu.
Mo(5a+%以下) 、Ca、 in (laj%以
下)や母材の融点より低い沸点を有する低沸点元素等の
中から選ばれる一種又は二種以上含有させたものを用い
、Pt合金とすることにより常温及び高温での機械的強
さを向上させて高速ボンディングを可能にすると共に、
ボール形成時におけるネック部の結晶粒粗大化を防止し
ている。A Pt alloy containing one or more selected from Mo (5a+% or less), Ca, In (laj% or less), and low boiling point elements having a boiling point lower than the melting point of the base material is used. This improves mechanical strength at room and high temperatures and enables high-speed bonding.
This prevents crystal grains from becoming coarse in the neck portion during ball formation.
また、高純度Agとは不可避不純物を含む99.99%
以上のものを用い、Ag合金とは高純度AgにAu。In addition, high purity Ag is 99.99% containing unavoidable impurities.
Using the above, the Ag alloy is high purity Ag and Au.
Pd (20a+%以下) 、Cu、 In、 Mg、
Y (5at%以下) 、Bt、 Ca、 La、
It (lat%以下)や母材の融点より低い沸点を有
する低沸点元素等の中から選ばれる一種又は二種以上含
有させたものを用い、Ag合金とすることにより常温及
び高温での機械的強さを向上させて高速ボンディングを
可能にすると共に、ボール形成時におけるネック部の結
晶粒粗大化を防止している。Pd (20a+% or less), Cu, In, Mg,
Y (5at% or less), Bt, Ca, La,
By using an Ag alloy containing one or more elements selected from It (lat% or less) and low boiling point elements having a boiling point lower than the melting point of the base material, mechanical properties at room temperature and high temperature can be improved. This improves strength and enables high-speed bonding, while also preventing coarsening of crystal grains in the neck portion during ball formation.
〈作用〉
本発明は上記技術的手段によれば、ボール形成時にネッ
ク部が熱影響を受けて該ネック部の芯線の外周部分と被
覆材の内周部分とが相互拡散することにより、Pt−A
g合金からなる拡散層を形成してネック部の強度が拡散
層のない母線に比べ向上するものである。<Function> According to the above-mentioned technical means, the neck portion is affected by heat during ball formation, and the outer circumferential portion of the core wire of the neck portion and the inner circumferential portion of the coating material mutually diffuse, so that Pt- A
By forming a diffusion layer made of g-alloy, the strength of the neck portion is improved compared to a generatrix without a diffusion layer.
〈実施例〉 以下、具体的な実施例について説明する。<Example> Hereinafter, specific examples will be described.
各試料は高純度Ag又はAg合金からなる被覆材1を高
純度pt又はPt合金からなる芯線2にクラッドし、次
に線引き加工を施し、その途中で焼なまし処理を施した
後に線引加工で線径30μの母線に成形し、更に応力除
去を行ったものであり、図示せる如く上記被覆材1の外
径をD□、芯線2の外径をD2としてこれら両者の径比
D 2 / D 1%を変えている。Each sample is made by cladding a core wire 2 made of high-purity PT or Pt alloy with a covering material 1 made of high-purity Ag or Ag alloy, then subjected to wire drawing, and then subjected to annealing treatment in the middle of the process, followed by wire drawing. As shown in the figure, the outer diameter of the covering material 1 is D□, the outer diameter of the core wire 2 is D2, and the diameter ratio of these two is D 2 /. D Changing 1%.
各試料の径比D2/D□%は次表に示す通りであって、
その試料隘1〜10は高純度Agの被覆材1を高純度P
tの芯線2にクラッドした実施品、試料隘11〜12は
高純度Agに^Uを5at%含有させた被覆材1を高純
度ptの芯線2にクラッドした実施品、試料Nα13は
高純度Agの被覆材1を高純度[’lにAuを2aj%
含有させた芯線2にクラッドした実施品、試料&14は
高純度Ag又はAg合金の被覆材1及び高純度Pt又は
pt金合金芯線2のどちらか一方か或いは両方にこれら
母材の融点より低い沸点を有する低沸点元素を含有させ
てクラッドした実施品、試料N1115は従来の半導体
素子用ボンディング線の一例を示す比較界である。The diameter ratio D2/D□% of each sample is as shown in the following table,
The sample holes 1 to 10 are coated with high-purity Ag coating material 1 and high-purity P
Samples 11 and 12 are samples in which the core wire 2 of high purity PT is clad with the covering material 1 containing 5 at% of ^U in high purity Ag. Sample Nα13 is a sample Nα13 with high purity Ag. The coating material 1 is made of high purity ['l with 2aj% Au]
Sample & 14 is a sample cladded with a core wire 2 containing high-purity Ag or Ag alloy coating material 1 and high-purity Pt or PT gold alloy core wire 2, either or both of which have a boiling point lower than the melting point of these base materials. Sample N1115, which is an example of a conventional bonding wire for semiconductor devices, is a comparative example of a conventional bonding wire for semiconductor devices.
本実施例の場合には試料Nα14として高純度Aliの
被覆材1を高純度PtにPを500atppm含有させ
た芯線2にクラッドしたものを例示し、これにより、ボ
ール形成時においてボール中の低沸点元素が蒸発飛散し
て、金属特有のガス吸収を防いで接合に良好なボールが
得られると共に、ネック部中の低沸点元素は蒸発できな
いが気化しようとして応力を発生し、これに伴ってボン
ディング後のネック部の破断強度が応力の発生しない母
線に比べ向上させている。In the case of this example, as sample Nα14, a core wire 2 made of high-purity Pt containing 500 atppm of P is clad with a coating material 1 made of high-purity Ali, and as a result, when the ball is formed, the boiling point in the ball is low. Elements evaporate and scatter, preventing the gas absorption characteristic of metals and obtaining a ball that is good for bonding.Also, low boiling point elements in the neck cannot evaporate but try to vaporize and generate stress, which causes stress after bonding. The rupture strength of the neck part is improved compared to the generatrix where stress does not occur.
また、試料NCL15として高純度Au (99,99
%)からなるAu線を例示している。In addition, high purity Au (99,99
%) is illustrated.
上記試料によってプルテストを所定回数(n40)宛行
い、夫々のプル強度及びネック部以外の母線部分で破断
した回数と、チップ割れの有無を測定した結果を次表に
示す。A pull test was performed on the above samples a predetermined number of times (n40), and the results of measuring each pull strength, the number of times the sample broke at the generatrix portion other than the neck portion, and the presence or absence of chip cracking are shown in the following table.
尚、各実施例の中でCモード破断の数及びチップ割れの
有無に基づき3ランクに区別し、チップ割れがなくしか
もCモード破断の数が多いものから少ないものへ順に◎
、○、×と判定した。In addition, in each example, there are three ranks based on the number of C-mode fractures and the presence or absence of chip cracking, and ranks are ranked from those with no chip cracking and those with the highest number of C-mode fractures to the lowest.
, ○, ×.
この測定結果により本発明の各実施品はCモード破断の
数が比較界に比べて明らかに多いことからネック部がそ
れ以外の母線部−分より強いことが判り、1更に15≦
D2/D□≦30及び96≦D2/D工≦99の範囲の
実施品がネック部の強度とボール形成時のボール硬さに
優れることが理解され、更に被覆材1の材質をAg合金
とするか又は芯線2の材質をPt合金とするか、或いは
低沸点元素を含有させることにより最適になることが理
解される。As a result of this measurement, the number of C-mode fractures in each of the products according to the present invention is clearly greater than that in the comparative field, which indicates that the neck portion is stronger than the other generatrix portions.
It is understood that the products in the range of D2/D□□≦30 and 96≦D2/D≦99 are superior in neck strength and ball hardness during ball formation, and furthermore, the material of the covering material 1 is made of Ag alloy. It is understood that the core wire 2 can be optimized by using a Pt alloy as the material, or by containing a low boiling point element.
〈発明の効果〉 本発明は上記の構成であるから、以下の利点を有する。<Effect of the invention> Since the present invention has the above configuration, it has the following advantages.
■ ボール形成時にネック部が熱影響を受けて該ネック
部の芯線の外周部分と被覆材の内周部分とが相互拡散す
ることにより、Pt−Ag合金からなる拡散層を形成し
てネック部の強度が拡散層のない母線に比べ向上するの
で、ネック部の強さを母線と同等以上にすることができ
る。■ During ball formation, the neck is affected by heat and the outer periphery of the core wire of the neck and the inner periphery of the coating material interdiffuse, forming a diffusion layer made of Pt-Ag alloy and forming a diffusion layer of the neck. Since the strength is improved compared to a bus bar without a diffusion layer, the strength of the neck portion can be made equal to or higher than that of the bus bar.
従って、ボール形成時にネック部が熱影響を受けて母線
より弱くなる従来のものに比べ、ボンディング作業中の
ネック部の破断やワイヤ倒れ、ワイヤ垂れが発生しない
と共に、製品の温度サイクル寿命試験において繰り返し
温度変化により発生する応力が母線全体に分散して吸収
され、ボンディング線の破断の最頻発生部位であるネッ
ク部の破断は劇的に減少し、信頼性が向上する。Therefore, compared to conventional products where the neck part is affected by heat during ball formation and becomes weaker than the bus bar, the neck part does not break during the bonding process, wire falls down, or wire sag occurs, and the product is repeatedly tested during temperature cycle life tests. Stress caused by temperature changes is dispersed and absorbed over the entire generatrix, dramatically reducing the number of fractures at the neck, which is the most common site of bonding wire fracture, and improving reliability.
■ ネック部が破断し難くなるので、ボンディング線の
線径を微細化でき、これに伴いボンディングピッチの短
縮化が可能となり、LSIの高密度実装が図れる。(2) Since the neck part becomes difficult to break, the wire diameter of the bonding wire can be made finer, thereby making it possible to shorten the bonding pitch and achieving high-density mounting of LSIs.
図面は本発明の一実施例を示す半導体素子用ボンディン
グ線の拡大縦断面図である。The drawing is an enlarged vertical cross-sectional view of a bonding wire for a semiconductor device showing an embodiment of the present invention.
Claims (1)
度Ag又はAg合金からなる被覆材を被覆したことを特
徴とする半導体素子用ボンディング線。A bonding wire for a semiconductor device, characterized in that a core wire made of high-purity Pt or a Pt alloy is covered with a covering material made of high-purity Ag or an Ag alloy.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2192802A JPH0479246A (en) | 1990-07-20 | 1990-07-20 | Bonding wire for semiconductor element |
US07/729,226 US5364706A (en) | 1990-07-20 | 1991-07-12 | Clad bonding wire for semiconductor device |
MYPI91001293A MY107874A (en) | 1990-07-20 | 1991-07-18 | Clad bonding wire for semiconductor device. |
GB9115519A GB2248416B (en) | 1990-07-20 | 1991-07-18 | Clad bonding wire for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2192802A JPH0479246A (en) | 1990-07-20 | 1990-07-20 | Bonding wire for semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0479246A true JPH0479246A (en) | 1992-03-12 |
Family
ID=16297234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2192802A Pending JPH0479246A (en) | 1990-07-20 | 1990-07-20 | Bonding wire for semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0479246A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7969021B2 (en) | 2000-09-18 | 2011-06-28 | Nippon Steel Corporation | Bonding wire for semiconductor device and method for producing the same |
JP5420783B1 (en) * | 2013-04-05 | 2014-02-19 | 田中電子工業株式会社 | Bonding wire for high-speed signal lines |
-
1990
- 1990-07-20 JP JP2192802A patent/JPH0479246A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7969021B2 (en) | 2000-09-18 | 2011-06-28 | Nippon Steel Corporation | Bonding wire for semiconductor device and method for producing the same |
JP5420783B1 (en) * | 2013-04-05 | 2014-02-19 | 田中電子工業株式会社 | Bonding wire for high-speed signal lines |
TWI490995B (en) * | 2013-04-05 | 2015-07-01 | Tanaka Electronics Ind | High-speed signal line with bonding wire |
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