JPH0479241A - Bonding wire for semiconductor element - Google Patents

Bonding wire for semiconductor element

Info

Publication number
JPH0479241A
JPH0479241A JP2192797A JP19279790A JPH0479241A JP H0479241 A JPH0479241 A JP H0479241A JP 2192797 A JP2192797 A JP 2192797A JP 19279790 A JP19279790 A JP 19279790A JP H0479241 A JPH0479241 A JP H0479241A
Authority
JP
Japan
Prior art keywords
alloy
outer diameter
wire
coating material
core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2192797A
Other languages
Japanese (ja)
Inventor
Katsuyuki Toyofuku
豊福　克之
Ichiro Nagamatsu
永松　一郎
Shinji Shirakawa
白川　信次
Sukehito Iga
祐人 伊賀
Takeshi Kujiraoka
鯨岡　毅
Norimasa Murakami
村上　憲正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP2192797A priority Critical patent/JPH0479241A/en
Priority to US07/729,226 priority patent/US5364706A/en
Priority to GB9115519A priority patent/GB2248416B/en
Priority to MYPI91001293A priority patent/MY107874A/en
Publication of JPH0479241A publication Critical patent/JPH0479241A/en
Pending legal-status Critical Current

Links

Classifications

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
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  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent breakage of a chip while making strength of a neck part equivalent to that of a busbar or more by coating an outer peripheral surface of a core which consists of a specified metal or an alloy thereof with a coating material which consists of a specified metal or an alloy thereof and by limiting diameter ratio of a core outer diameter to a coating material outer diameter to a specified range. CONSTITUTION:A coating material 1 which consists of high purity Au or Au alloy is clad on a core 2 which consists of high purity Ag or Ag alloy. Then, wire drawing processing is performed. After annealing treatment is performed in the middle of the processing, a busbar of a specified wire diameter is formed by wire drawing processing. Furthermore, stress is removed. In the process, diameter ratio D2/D1% between an outer diameter D1 of the coating material 1 and an outer diameter D2 of the core 2 is limited to a range of 15<=D2/D1<=60 and 85<=D2/D1<=99. Thereby, a neck part becomes stronger than other busbar part and breakage of a chip is eliminated, thereby improving rigidity of a ball during ball formation. It is thereby possible to obtain thinner bonding wire to reduce bonding pitch accordingly and to realize high density package of an LSI.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は半導体素子のチップ電極と外部リードとを接続
するために用いられる半導体素子用ボンディング線、特
にボールボンディング法に好適なものに関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a bonding wire for a semiconductor device used for connecting a chip electrode of a semiconductor device and an external lead, and particularly to a bonding wire suitable for the ball bonding method.

〈従来の技術〉 従来、この種の半導体素子用ボンディング線として例え
ばキャピラリーの先端から垂下したＡｕ線の先端を電気
トーチにより溶融させてホールを形成し、このボールを
半導体素子のチップ電極に圧着して接着せしめ、その後
ループ状に外部リードまで導いて該外部リードに圧着・
切断することにより、チップ電極と外部リードを接続さ
せたものがある。<Prior art> Conventionally, this type of bonding wire for semiconductor devices is made by melting the tip of an Au wire hanging from the tip of a capillary with an electric torch to form a hole, and then press-bonding the ball to the chip electrode of the semiconductor device. Then, lead it in a loop shape to the external lead and crimp/bond it to the external lead.
Some devices have chip electrodes and external leads connected by cutting.

〈発明が解決しようとする課題〉 しかし乍ら、このような従来の半導体素子用ボンディン
グ線ではボール形成時にこのボール直上のネック部が熱
影響を受けて線材中に蓄積された応力が緩和されるため
、熱影響を受けない母線に比べ機械的強さが低下し、そ
の結果ボンディング作業中にネック部が破断したりワイ
ヤ倒れやワイヤ垂れが発生すると共に、製品の温度サイ
クル寿命試験において繰り返し温度変化により熱膨張・
収縮して発生する応力がネック部に集中し、ネック部の
破断が発生し易いという問題がある。<Problems to be Solved by the Invention> However, in such conventional bonding wires for semiconductor devices, when the ball is formed, the neck directly above the ball is affected by heat, and the stress accumulated in the wire is alleviated. As a result, the mechanical strength is lower than that of a bus bar that is not affected by heat, resulting in neck breakage, wire collapse, and wire sag during bonding operations, as well as repeated temperature changes during product temperature cycle life tests. Thermal expansion due to
There is a problem in that the stress generated by contraction concentrates on the neck portion, making it easy for the neck portion to break.

一方、近年ＬＳＩの高密度実装化に伴って多ピン化傾向
が強まる中、ボンディング線を細線化してボンディング
ピッチを短縮することが要求されている。On the other hand, in recent years, as LSIs have become more densely packaged and the number of pins has increased, there has been a demand for thinner bonding lines to shorten the bonding pitch.

しかし、前述のボンディング線ではネック部が破断し易
いためにその線径を細くすることができす、上記要求を
満足し得ないという問題もある。However, since the neck portion of the above-mentioned bonding wire is easily broken, the diameter of the wire can be reduced, but there is also the problem that the above-mentioned requirements cannot be satisfied.

そこで、例えば特開昭５６−２１３５４号公報に開示さ
れる如く高純度Ａｇからなる芯線の外周面に高純度Ａｕ
又はＡｕ合金からなる被覆材を被覆したものがある。Therefore, as disclosed in JP-A-56-21354, for example, high-purity Au is used on the outer peripheral surface of a core wire made of high-purity Ag.
Alternatively, there are those coated with a coating material made of an Au alloy.

しかし、このような７Ｂ−Ａｕ複合ボンディング線では
被覆材の外径に対する芯線の外径の径比によっては、ボ
ール形成時にネック部か熱影響を受けても該ネック部の
芯線の外周部分と被覆材の内周部分との間に十分な厚さ
の拡散層が形成されずネック部の強度を向上させられな
かったり、又はネック部に十分な厚さの拡散層が形成さ
れたとしてもボール硬度が硬くなり過ぎてチップ割れの
原因となるという問題かある。However, in such a 7B-Au composite bonding wire, depending on the diameter ratio of the outer diameter of the core wire to the outer diameter of the covering material, even if the neck part is affected by heat during ball formation, the outer peripheral part of the core wire at the neck part and the covering material may A sufficiently thick diffusion layer may not be formed between the inner circumference of the material and the strength of the neck portion cannot be improved, or even if a sufficiently thick diffusion layer is formed at the neck portion, the ball hardness There is a problem that it becomes too hard and causes the chip to crack.

本発明は斯る従来事情に鑑み、ネック部の強さを母線と
同等以上にしながらチップ割れを防止することを目的と
する。SUMMARY OF THE INVENTION In view of the conventional circumstances, it is an object of the present invention to prevent chip cracking while making the strength of the neck part equal to or higher than that of the bus bar.

〈課題を解決するための手段〉 上記課題を解決するために本発明が講する技術的手段は
、被覆材の外径に対する芯線の外径の径比を１５〜６０
％又は８５〜９９％としたことを特徴とするものである
。<Means for Solving the Problems> The technical means taken by the present invention to solve the above problems is to increase the diameter ratio of the outer diameter of the core wire to the outer diameter of the coating material to 15 to 60.
% or 85 to 99%.

そして、高純度Ａｇとは不可避不純物を含む９９．９９
％以上のものを用い、Ａｇ合金とは高純度、！１ｇにＰ
ｄ　（２０ａ＋％以下）　、Ｐ＋　（８ａ＋％以下）　
、Ｃｕ、　Ｉｎ。And, high purity Ag is 99.99% containing unavoidable impurities.
% or more, Ag alloy is of high purity! P in 1g
d (20a+% or less), P+ (8a+% or less)
, Cu, In.

Ｍｇ、　Ｙ　（５ａｔ％以下）　、Ｂｃ、　Ｃａ、　Ｌ
ａ、　ｌｔ　（１ａ＋％以下）や母材の融点より低い沸
点を有する低沸点元素等の中から選ばれる一種又は二種
以上含有させたものを用い、Ａｇ合金とすることにより
常温及び高温での機械的強さを向上させて高速ボンディ
ングを可能にすると共に、ボール形成時におけるネック
部の結晶粒粗大化を防止している。Mg, Y (5 at% or less), Bc, Ca, L
By using an Ag alloy containing one or more selected from a, lt (1a+% or less) and low boiling point elements having a boiling point lower than the melting point of the base material, it can be used at room temperature and high temperature. It improves mechanical strength, enables high-speed bonding, and prevents coarsening of crystal grains in the neck portion during ball formation.

また、高純度Ａｕとは不可避不純物を含む９９．９９％
以上のものを用い、Ａｕ合金とは高純度ＡｕにＰｄ（２
０ａｔ％以下）　、Ｐｔ　（１５ａ＋％以下）　、Ｃｕ
、　　Ｉｎ、　Ｇｅ。In addition, high purity Au is 99.99% containing unavoidable impurities.
Using the above, Au alloy is high purity Au and Pd (2
0at% or less), Pt (15a+% or less), Cu
, In, Ge.

Ｍｏ、　Ｙ、　２ｒ　（５ａｔ％以下）　、Ｂａ、　Ｃ
ａ、　Ｌａ、　Ｍｇ　（１ａｔ％以下）や母材の融点よ
り低い沸点を有する低沸点元素等の中から選ばれる一種
又は二種以上含有させたものを用い、Ａｕ合金とするこ
とにより常温及び高温での機械的強さを向上させて高速
ボンディングを可能にすると共に、ボール形成時におけ
るネック部の結晶粒粗大化を防止している。Mo, Y, 2r (5at% or less), Ba, C
By using an Au alloy containing one or more elements selected from a, La, Mg (1 at% or less), and low boiling point elements that have a boiling point lower than the melting point of the base material, it can be used at room temperature and high temperature. This improves the mechanical strength of the ball and enables high-speed bonding, while also preventing coarsening of the crystal grains in the neck portion during ball formation.

〈作用〉 上記被覆材の外径に対する芯線の外径の径比における数
値の限定理由について述べる。<Operation> The reason for limiting the numerical value of the ratio of the outer diameter of the core wire to the outer diameter of the covering material will be described.

被覆材の外径に対する芯線の外径の径比が１５％より小
さい場合や９９％より大きい場合には、ボール形成時に
ネック部が熱影響を受けても該ネック部の芯線の外周部
分と被覆材の内周部分との間に十分な厚さの拡散層が形
成されずネック部の強度を向上させられない。If the diameter ratio of the outer diameter of the core wire to the outer diameter of the covering material is smaller than 15% or larger than 99%, even if the neck part is affected by heat during ball formation, the outer peripheral part of the core wire at the neck part and the covering material A sufficiently thick diffusion layer is not formed between the material and the inner peripheral portion of the material, making it impossible to improve the strength of the neck portion.

また、被覆材の外径に対する芯線の外径の径比が６０〜
８５％の場合には、ネック部に十分な厚さの拡散層が形
成されてネック部の強度を向上させられるが、ボール硬
度が硬（なり過ぎてチップ割れの原因となる。In addition, the diameter ratio of the outer diameter of the core wire to the outer diameter of the covering material is 60~
In the case of 85%, a sufficiently thick diffusion layer is formed in the neck portion to improve the strength of the neck portion, but the ball hardness becomes too hard (which may cause chip cracking).

従って、被覆材の外径に対する芯線の外径の径比を１５
〜６０％又は８５〜９９％とすることにより、ボール形
成時にネック部か熱影響を受けて該ネック部の芯線の外
周部分と被覆材の内周部分との間に、十分な厚さのＡｇ
−Ａｕ合金からなる拡散層を形成しネック部の強度が拡
散層のない母線に比べ向上すると共に、ボール硬度が十
分に軟らかいものである。Therefore, the diameter ratio of the outer diameter of the core wire to the outer diameter of the covering material is 15
~60% or 85-99%, the neck part is affected by heat during ball formation, and a sufficient thickness of Ag is formed between the outer peripheral part of the core wire of the neck part and the inner peripheral part of the covering material.
-The strength of the neck portion is improved compared to a generatrix without a diffusion layer by forming a diffusion layer made of an Au alloy, and the ball hardness is sufficiently soft.

〈実施例〉 以下、具体的な実施例について説明する。<Example> Hereinafter, specific examples will be described.

各試料は高純度Ａｕ又はＡｕ合金からなる被覆材１を高
純度Ａｇ又はＡｇ合金からなる芯線２にクラッドし、次
に線引き加工を施し、その途中で焼なまし処理を施した
後に線引加工で線径３０μの母線に成形し、更に応力除
去を行ったものであり、図示せる如く上記被覆材１の外
径をＤ□、芯線２の外径をＤ２としてこれら両者の径比
Ｄ　２　／　Ｄ　１％を変えている。Each sample is made by cladding a core wire 2 made of high-purity Ag or Ag alloy with a coating material 1 made of high-purity Au or Au alloy, then subjected to wire drawing, and then subjected to annealing treatment during the process, followed by wire drawing. As shown in the figure, the outer diameter of the covering material 1 is D□, the outer diameter of the core wire 2 is D2, and the diameter ratio of these two is D 2 /. D Changing 1%.

各試料の径比Ｄ　２　／　Ｄ　１％は次表に示す通りで
あって、その試料Ｎα１〜１０は高純度Ａｕの被覆材１
を高純度Ａｇの芯線２にクラッドした実施品、試料Ｎα
１１〜１２は高純度ＡｕにＰｄを１０ａ１％含有させた
被覆材１を高純度Ａｇの芯線２にクラッドした実施品、
試料Ｎα１３は高純度Ａｕの被覆材１を高純度ＡｇにＰ
ｄを１０ａ１％含有させた芯線２にクラッドした実施品
、試料Ｎα１４は高純度Ａｕ又はＡｕ合金の被覆材１及
び高純度Ａｇ又はＡｇ合金の芯線２のどちらか一方か或
いは両方にこれら母材の融点より低い沸点を有する低沸
点元素を含有させてクラッドした実施品、試料Ｎα１５
は従来の半導体素子用ボンディング線の一例を示す比較
品である。The diameter ratio D2/D1% of each sample is as shown in the following table, and the samples Nα1 to Nα10 are coated with high-purity Au coating material 1.
Sample Nα is a practical product in which core wire 2 of high purity Ag is clad with
11 to 12 are actual products in which a core wire 2 of high purity Ag is clad with a coating material 1 made of high purity Au containing 10a1% of Pd,
Sample Nα13 is made by replacing high-purity Au coating material 1 with high-purity Ag.
Sample Nα14 is a sample Nα14 which is clad with a core wire 2 containing 10a1% of d. Sample Nα15, a product clad with a low boiling point element having a boiling point lower than the melting point
is a comparative product showing an example of a conventional bonding wire for semiconductor devices.

本実施例の場合には試料Ｎα１４として高純度Ａｕの被
覆材１を高純度ＡｇにＰを５００ａ＋ｐｐｍ含有させた
芯線２にクラッドしたものを例示し、これにより、ボー
ル形成時においてボール中の低沸点元素が蒸発飛散して
、金属特有のガス吸収を防いで接合に良好なボールが得
られると共に、ネック部中の低沸点元素は蒸発できない
が気化しようとして応力を発生し、これに伴ってボンデ
ィング後のネック部の破断強度が応力の発生しない母線
に比べ向上させている。In this example, as sample Nα14, a core wire 2 made of high-purity Ag containing 500a+ppm of P is clad with a coating material 1 of high-purity Au, which reduces the boiling point of the ball during ball formation. Elements evaporate and scatter, preventing the gas absorption characteristic of metals and obtaining a ball that is good for bonding.Also, low boiling point elements in the neck cannot evaporate but try to vaporize and generate stress, which causes stress after bonding. The rupture strength of the neck part is improved compared to the generatrix where stress does not occur.

また、試料Ｎα１５として高純度Ａｕ　（９９，９９％
）からなるＡｕ線を例示している。In addition, high purity Au (99,99%
) is illustrated.

上記試料によってプルテストを所定回数（ｎ４０）宛行
い、夫々のプル強度及びネック部以外の母線部分で破断
した回数と、チップ割れの有無を測定した結果を次表に
示す。A pull test was performed on the above samples a predetermined number of times (n40), and the results of measuring each pull strength, the number of times the sample broke at the generatrix portion other than the neck portion, and the presence or absence of chip cracking are shown in the following table.

尚、各実施例の中でＣモード破断の数及びチップ割れの
有無に基つき３ランクに区別し、チップ割れがなくしか
もＣモード破断の数が多いものから少ないものへ順に◎
、○、×と判定した。In addition, in each example, there are three ranks based on the number of C-mode fractures and the presence or absence of chip cracking, and ranks are ranked from those with no chip cracking and those with the highest number of C-mode fractures to the lowest ◎
, ○, ×.

この測定結果により１５≦Ｄ　２　／　Ｄ　１≦６０及
び８５≦Ｄ２／Ｄよ≦９９の範囲の各実施品は、Ｃモー
ド破断の数が上記範囲外の実施品に比べて明らかに多い
ことからネック部がそれ以外の母線部分より強いことが
判ると共に、チップ割れが無いことからボール形成時の
ボール硬さに優れることが理解される。This measurement result shows that the number of C-mode fractures for each of the products in the ranges of 15≦D2/D1≦60 and 85≦D2/D≦99 is clearly greater than that of the products outside the above ranges. It can be seen that the neck portion is stronger than the other generatrix portions, and since there is no chip cracking, it is understood that the ball has excellent hardness during ball formation.

更に、被覆材１の材質をＡｕ合金とするか又は芯線２の
材質をＡｇ合金とするか、或いは低沸点元素を含有させ
ることにより、ネック部の強度とポール形成時のボール
硬さに優れることが理解される。Furthermore, by making the material of the covering material 1 an Au alloy, making the material of the core wire 2 an Ag alloy, or containing a low boiling point element, the strength of the neck part and the hardness of the ball during pole formation can be excellent. is understood.

〈発明の効果〉 本発明は上記の構成であるから、以下の利点を有する。<Effect of the invention> Since the present invention has the above configuration, it has the following advantages.

■　被覆材の外径に対する芯線の外径の径比を１５〜６
０％又は８５〜９９％とすることにより、ポール形成時
にネック部が熱影響を受けて該ネック部の芯線の外周部
分と被覆材の内周部分との間に、十分な厚さのＡｇ−Ａ
ｕ合金からなる拡散層を形成しネック部の強度が拡散層
のない母線に比へ向上すると共に、ボール硬度が十分に
軟らかいので、ネック部の強さを母線と同等以上にしな
がらチップ割れを防止することができる。■ The ratio of the outer diameter of the core wire to the outer diameter of the sheathing material is 15 to 6.
By setting the ratio to 0% or 85 to 99%, the neck part is affected by heat during pole formation, and a sufficient thickness of Ag- A
By forming a diffusion layer made of U alloy, the strength of the neck part is improved compared to the generatrix without a diffusion layer, and since the ball hardness is sufficiently soft, chip cracking is prevented while the strength of the neck part is equal to or higher than that of the generatrix. can do.

従って、ポール形成時にネック部が熱影響を受けて母線
より弱くなる従来のものに比へ、ボンディング作業中の
ネック部の破断やワイヤ倒れ、ワイヤ垂れが発生しない
と共に、製品の温度サイクル寿命試験において繰り返し
温度変化により発生する応力が母線全体に分散して吸収
され、ボンディング線の破断の最頻発生部位であるネッ
ク部の破断は劇的に減少し、信頼性が向上する。Therefore, compared to the conventional method where the neck part is affected by heat during pole formation and becomes weaker than the bus bar, the neck part does not break during the bonding process, the wire falls down, and the wire sag does not occur. The stress generated by repeated temperature changes is dispersed and absorbed over the entire generatrix, and the number of fractures at the neck, which is the most common site of bonding wire fracture, is dramatically reduced, improving reliability.

■　ネック部が破断し難くなるので、ボンディング線の
線径を微細化でき、これに伴いボンディングピッチの短
縮化が可能となり、ＬＳＩの高密度実装が図れる。(2) Since the neck part becomes difficult to break, the wire diameter of the bonding wire can be made finer, thereby making it possible to shorten the bonding pitch and achieving high-density mounting of LSIs.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明の一実施例を示す半導体素子用ボンディン
グ線の拡大縦断面図である。The drawing is an enlarged vertical cross-sectional view of a bonding wire for a semiconductor device showing an embodiment of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 　高純度Ａｇ又はＡｇ合金からなる芯線の外周面に高純
度Ａｕ又はＡｕ合金からなる被覆材を被覆した半導体素
子用ボンディング線において、前記被覆材の外径に対す
る芯線の外径の径比を１５〜６０％又は８５〜９９％と
したことを特徴とする半導体素子用ボンディング線。In a bonding wire for semiconductor devices in which the outer peripheral surface of a core wire made of high-purity Ag or an Ag alloy is coated with a coating material made of high-purity Au or an Au alloy, the diameter ratio of the outer diameter of the core wire to the outer diameter of the coating material is 15 to 60% or 85-99% bonding wire for a semiconductor element.
JP2192797A 1990-07-20 1990-07-20 Bonding wire for semiconductor element Pending JPH0479241A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2192797A JPH0479241A (en) 1990-07-20 1990-07-20 Bonding wire for semiconductor element
US07/729,226 US5364706A (en) 1990-07-20 1991-07-12 Clad bonding wire for semiconductor device
GB9115519A GB2248416B (en) 1990-07-20 1991-07-18 Clad bonding wire for semiconductor device
MYPI91001293A MY107874A (en) 1990-07-20 1991-07-18 Clad bonding wire for semiconductor device.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2192797A JPH0479241A (en) 1990-07-20 1990-07-20 Bonding wire for semiconductor element

Publications (1)

Publication Number Publication Date
JPH0479241A true JPH0479241A (en) 1992-03-12

Family

ID=16297151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2192797A Pending JPH0479241A (en) 1990-07-20 1990-07-20 Bonding wire for semiconductor element

Country Status (1)

Country Link
JP (1) JPH0479241A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437136A (en) * 2011-11-16 2012-05-02 浙江佳博科技股份有限公司 Bonding alloy wire and production technology thereof
JP6207793B1 (en) * 2016-04-28 2017-10-04 日鉄住金マイクロメタル株式会社 Bonding wires for semiconductor devices
JP2017212457A (en) * 2016-04-28 2017-11-30 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437136A (en) * 2011-11-16 2012-05-02 浙江佳博科技股份有限公司 Bonding alloy wire and production technology thereof
JP6207793B1 (en) * 2016-04-28 2017-10-04 日鉄住金マイクロメタル株式会社 Bonding wires for semiconductor devices
JP2017212457A (en) * 2016-04-28 2017-11-30 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
US11342299B2 (en) 2016-04-28 2022-05-24 Nippon Micrometal Corporation Bonding wire for semiconductor devices

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