JPH0479243A - Bonding wire for semiconductor element - Google Patents

Bonding wire for semiconductor element

Info

Publication number
JPH0479243A
JPH0479243A JP2192799A JP19279990A JPH0479243A JP H0479243 A JPH0479243 A JP H0479243A JP 2192799 A JP2192799 A JP 2192799A JP 19279990 A JP19279990 A JP 19279990A JP H0479243 A JPH0479243 A JP H0479243A
Authority
JP
Japan
Prior art keywords
alloy
wire
strength
neck part
busbar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2192799A
Other languages
Japanese (ja)
Inventor
Katsuyuki Toyofuku
豊福　克之
Ichiro Nagamatsu
永松　一郎
Shinji Shirakawa
白川　信次
Sukehito Iga
祐人 伊賀
Takeshi Kujiraoka
鯨岡　毅
Norimasa Murakami
村上　憲正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP2192799A priority Critical patent/JPH0479243A/en
Priority to US07/729,226 priority patent/US5364706A/en
Priority to MYPI91001293A priority patent/MY107874A/en
Priority to GB9115519A priority patent/GB2248416B/en
Publication of JPH0479243A publication Critical patent/JPH0479243A/en
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To make strength of a neck part equivalent to that of a busbar or more and to improve the drawing strength of wire by coating an outer peripheral surface of a core which consists of a specified metal or an alloy thereof with a coating material which consists of a specified metal or an alloy thereof. CONSTITUTION:A coating material 1 which consists of high purity Pd or Pd alloy is clad on a core 2 which consists of high purity Ag or Ag alloy. Then, wire drawing processing is performed. After annealing treatment is performed in the middle of the processing, a busbar of a specified wire diameter is formed by wire drawing processing. Furthermore, stress is removed. In the constitution, a neck part is thermally affected during ball formation, and an outer peripheral part of the core and an inner peripheral part of a coating member of the neck part mutually diffuse; thereby a, diffusion layer consisting of Ag-Pd alloy is formed and strength of the neck part is improved compared with a busbar without a diffusion layer. Therefore, it is possible to make strength of the neck part equivalent to that of the busbar or more. It is thereby possible to obtain thinner bonding wire, to reduce bonding pitch accordingly and to realize high density package of an LSI.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は半導体素子のチップ電極と外部リードとを接続
するために用いられる半導体素子用ボンディング線、特
にボールボンディング法に好適なものに関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a bonding wire for a semiconductor device used for connecting a chip electrode of a semiconductor device and an external lead, and particularly to a bonding wire suitable for the ball bonding method.

〈従来の技術〉 従来、この種の半導体素子用ボンディング線として例え
ばキャピラリーの先端から垂下したＡｕ線の先端を電気
トーチにより溶融させてボールを形成し、このボールを
半導体素子のチップ電極に圧着して接着せしめ、その後
ループ状に外部リードまで導いて該外部リードに圧着・
切断することにより、チップ電極と外部リードを接続さ
せたものがある。<Prior art> Conventionally, this type of bonding wire for semiconductor devices has been used, for example, by melting the tip of an Au wire hanging from the tip of a capillary with an electric torch to form a ball, and then press-bonding this ball to the chip electrode of a semiconductor device. Then, lead it in a loop shape to the external lead and crimp/bond it to the external lead.
Some devices have chip electrodes and external leads connected by cutting.

〈発明が解決しようとする課題〉 しかし乍ら、このような従来の半導体素子用ボンディン
グ線ではボール形成時にこのボール直上のネック部が熱
影響を受けて線材中に蓄積された応力が緩和されるため
、熱影響を受けない母線に比べ機械的強さが低下し、そ
の結果ホンディング作業中にネック部が破断したりワイ
ヤ倒れやワイヤ垂れが発生すると共に、製品の温度サイ
クル寿命試験において繰り返し温度変化により熱膨張・
収縮して発生する応力がネック部に集中し、ネック部の
破断が発生し易いという問題がある。<Problems to be Solved by the Invention> However, in such conventional bonding wires for semiconductor devices, when the ball is formed, the neck directly above the ball is affected by heat, and the stress accumulated in the wire is alleviated. As a result, the mechanical strength is lower than that of a bus bar that is not affected by heat, resulting in neck breakage, wire collapse, and wire sagging during honding operations. Thermal expansion due to changes
There is a problem in that the stress generated by contraction concentrates on the neck portion, making it easy for the neck portion to break.

一方、近年ＬＳＩの高密度実装化に伴って多ピン化傾向
が強まる中、ボンディング線を細線化してボンディング
ピッチを短縮することが要求されている。On the other hand, in recent years, as LSIs have become more densely packaged and the number of pins has increased, there has been a demand for thinner bonding lines to shorten the bonding pitch.

しかし、前述のボンディング線ではネック部が破断し易
いためにその線径を細くすることができず、上記要求を
満足し得ないという問題もある。However, the above-mentioned bonding wire has the problem that the neck portion is easily broken, so that the diameter of the wire cannot be made thinner, and the above-mentioned requirements cannot be satisfied.

本発明は斯る従来事情に鑑み、ネック部の強さを母線と
同等以上にすることを目的とする。In view of such conventional circumstances, the present invention aims to make the strength of the neck portion equal to or higher than that of the generatrix.

〈課題を解決するための手段〉 上記課題を解決するために本発明が講する技術的手段は
、高純度Ａｇ又はＡｇ合金からなる芯線の外周面に高純
度Ｐｄ又はＰｄ合金からなる被覆材を被覆したことを特
徴とするものである。<Means for Solving the Problems> The technical means taken by the present invention to solve the above problems is to apply a coating material made of high purity Pd or Pd alloy to the outer peripheral surface of a core wire made of high purity Ag or Ag alloy. It is characterized by being coated.

そして、高純度Ａｇとは不可避不純物を含む９９．９９
％以上のものを用い、Ａｇ合金とは高純度ＡｇにＡｕ　
（２０ａｔ％以下）　、Ｐｔ　（８ａｔ％以下）　、Ｃ
ｕ、　Ｉｎ。And, high purity Ag is 99.99% containing unavoidable impurities.
% or more, Ag alloy is high purity Ag and Au
(20at% or less), Pt (8at% or less), C
u, In.

Ｍｇ、　Ｙ　（５ａｔ％以下）　、Ｂｅ、　Ｃａ、　Ｌ
ａ、　２＋　（ｌａｔ％以下）や母材の融点より低い沸
点を有する低沸点元素等の中から選ばれる一種又は二種
以上含有させたものを用い、Ａｇ合金とすることにより
常温及び高温での機械的強さを向上させて高速ボンディ
ングを可能にすると共に、ポール形成時におけるネック
部の結晶粒粗大化を防止している。Mg, Y (5 at% or less), Be, Ca, L
By using an Ag alloy containing one or more elements selected from a, 2+ (lat% or less) and low boiling point elements having a boiling point lower than the melting point of the base material, it can be used at room temperature and high temperature. It improves mechanical strength, enables high-speed bonding, and prevents coarsening of crystal grains in the neck portion during pole formation.

また、高純度Ｐｄとは不可避不純物を含む９９．９％以
上のものを用い、Ｐｄ合金とは高純度ＰｄにＰＩ（８ａ
ｔ％以下）　、Ａｕ　（５ｘｔ％以下）　、Ｉｎ、　Ｍ
ｇ、　ＭＯ，Ｙ（５ａ（％以下）　、Ｇｅ、　Ｌａ　（
ｌａｔ％以下）や母材の融点より低い沸点を有する低沸
点元素等の中から選ばれる一種又は二種以上含有させた
ものを用い、［’ｄ金合金することにより常温及び高温
での機械的強さを向上させて高速ボンディングを可能に
すると共に、ポール形成時におけるネック部の結晶粒粗
大化を防止している。In addition, high-purity Pd is defined as 99.9% or more containing unavoidable impurities, and Pd alloy is defined as high-purity Pd plus PI (8a
t% or less), Au (5xt% or less), In, M
g, MO, Y (5a (% or less), Ge, La (
lat% or less) and low boiling point elements with a boiling point lower than the melting point of the base material. This improves strength and enables high-speed bonding, while also preventing coarsening of crystal grains in the neck portion during pole formation.

〈作用〉 本発明は上記技術的手段によれば、ボール形成時にネッ
ク部が熱影響を受けて該ネック部の芯線の外周部分と被
覆材の内周部分とが相互拡散することにより、Ａｇ−Ｐ
ｔ１合金からなる拡散層を形成してネック部の強度が拡
散層のない母線に比べ向上するものである。<Function> According to the above-mentioned technical means, the neck portion is affected by heat during ball formation, and the outer circumferential portion of the core wire of the neck portion and the inner circumferential portion of the coating material mutually diffuse, so that Ag- P
By forming a diffusion layer made of t1 alloy, the strength of the neck portion is improved compared to a generatrix without a diffusion layer.

〈実施例〉 以下、具体的な実施例について説明する。<Example> Specific examples will be described below.

各試料は高純度Ｐｄ又はＰｄ合金からなる被覆材１を高
純度Ａｇ又はＡｇ合金からなる芯線２にクラッドし、次
に線引き加工を施し、その途中で焼なまし処理を施した
後に線引加工で線径３０μの母線に成形し、更に応力除
去を行ったものであり、図示せる如く上記被覆材１の外
径をＤ□、芯線２の外径をＤ２としてこれら両者の径比
Ｄ　２　／　Ｄ　＞％を変えている。Each sample is made by cladding a core wire 2 made of high-purity Ag or Ag alloy with a coating material 1 made of high-purity Pd or Pd alloy, then subjected to wire drawing, annealed in the middle, and then wire drawn. As shown in the figure, the outer diameter of the covering material 1 is D□, the outer diameter of the core wire 2 is D2, and the diameter ratio of these two is D 2 /. D>% is changing.

各試料の径比Ｄ２／Ｄ工％は次表に示す通りであって、
その試料Ｎα１〜１０は高純度Ｐｄの被覆材１を高純度
Ａｇの芯線２にクラッドした実施品、試料Ｎα１１〜１
２は高純度Ｐｄに＾Ｕを３ａｔ％含有させた被覆材１を
高純度Ａｇの芯線２にクラッドした実施品、試料胤１３
は高純度Ｐｄの被覆材１を高純度Ａｇｌ：Ａｕを５ａｊ
％含有させた芯線２にクラッドした実施品、試料隘１４
は高純度Ｐｄ又はＰｄ合金の被覆材１及び高純度Ａｇ又
はＡｇ合金の芯線２のどちらか一方か或いは両方にこれ
ら母材の融点より低い沸点を有する低沸点元素を含有さ
せてクラッドした実施品、試料Ｎα１５は従来の半導体
素子用ボンディング線の一例を示す比較品である。The diameter ratio D2/D work% of each sample is as shown in the following table,
The samples Nα1 to 10 are actual products in which a high-purity Pd coating material 1 is clad to a high-purity Ag core wire 2, and samples Nα11 to 1
2 is an actual product in which a core wire 2 of high purity Ag is clad with a coating material 1 containing 3 at% of ^U in high purity Pd, sample seed 13
is high purity Pd coating material 1 and high purity Agl:Au 5aj
% contained core wire 2, sample 14
is an implementation product in which one or both of the coating material 1 made of high-purity Pd or Pd alloy and the core wire 2 made of high-purity Ag or Ag alloy are clad with a low-boiling point element having a boiling point lower than the melting point of these base materials. , Sample Nα15 is a comparative product showing an example of a conventional bonding wire for semiconductor devices.

本実施例の場合には試料Ｎα１４として高純度Ｉ’ｄの
被覆材１を高純度ＡｇにＰを５ＧＯａｔｐｐｍ含有させ
た芯線２にクラッドしたものを例示し、これにより、ポ
ール形成時においてボール中の低沸点元素が蒸発飛散し
て、金属特有のガス吸収を防いで接合に良好なボールが
得られると共に、ネック部中の低沸点元素は蒸発できな
いが気化しようとして応力を発生し、これに伴ってボン
ディング後のネック部の破断強度が応力の発生しない母
線に比べ向上させている。In this example, as sample Nα14, a core wire 2 made of high-purity Ag containing 5 GO at ppm of P is clad with a coating material 1 of high purity I'd. The low boiling point elements evaporate and scatter, preventing the gas absorption peculiar to metals and providing a ball with good bonding properties.The low boiling point elements in the neck cannot evaporate, but try to vaporize and generate stress, which causes stress. The fracture strength of the neck after bonding is improved compared to the generatrix without stress.

また、試料ＮαＩ５として高純度Ａ＋＋　（９９，９９
％）からなるＡｕ線を例示している。In addition, high purity A++ (99,99
%) is illustrated.

上記試料によってプルテストを所定回数（ｎ４０）宛行
い、夫々のプル強度及びネック部以外の母線部分で破断
した回数と、チップ割れの有無を測定した結果を次表に
示す。A pull test was performed on the above samples a predetermined number of times (n40), and the results of measuring each pull strength, the number of times the sample broke at the generatrix portion other than the neck portion, and the presence or absence of chip cracking are shown in the following table.

尚、各実施例の中でＣモード破断の数及びチップ割れの
有無に基づき３ランクに区別し、チップ割れがなくしか
もＣモード破断の数が多いものから少ないものへ順に◎
、○、×と判定した。In addition, in each example, there are three ranks based on the number of C-mode fractures and the presence or absence of chip cracking, and ranks are ranked from those with no chip cracking and those with the highest number of C-mode fractures to the lowest.
, ○, ×.

この測定結果により本発明の各実施品はＣモード破断の
数が比較界に比べて明らかに多いことからネック部がそ
れ以外の母線部分より強いことが判り、更に１５≦Ｄ　
２　／　Ｄよ≦２５及び９０≦Ｄ２／Ｄ１≦９９の範囲
の実施品がネック部の強度とボール形成時のボール硬さ
に優れることが理解され、更に被覆材１の材質をＰｄ合
金とするか又は芯線２の材質をＡｇ合金とするか、或い
は低沸点元素を含有させることにより最適になることが
理解される。As a result of this measurement, each of the products according to the present invention has a clearly larger number of C-mode fractures than the comparative products, which indicates that the neck portion is stronger than the other generatrix portions, and furthermore, 15≦D
2/It is understood that the implemented products in the range of D≦25 and 90≦D2/D1≦99 are excellent in neck strength and ball hardness during ball formation, and furthermore, the material of the covering material 1 is made of a Pd alloy. Alternatively, it is understood that the material of the core wire 2 is made of an Ag alloy or contains a low boiling point element.

〈発明の効果〉 本発明は上記の構成であるから、以下の利点を有する。<Effect of the invention> Since the present invention has the above configuration, it has the following advantages.

■　ボール形成時にネック部が熱影響を受けて該ネック
部の芯線の外周部分と被覆材の内周部分とが相互拡散す
ることにより、Ａｇ−Ｐｄ合金からなる拡散層を形成し
てネック部の強度が拡散層のない母線に比べ向上するの
で、ネック部の強さを母線と同等以上にすることができ
る。■ During ball formation, the neck is affected by heat and the outer periphery of the core wire of the neck and the inner periphery of the coating material interdiffuse, forming a diffusion layer made of Ag-Pd alloy and forming a diffusion layer of the neck. Since the strength is improved compared to a bus bar without a diffusion layer, the strength of the neck portion can be made equal to or higher than that of the bus bar.

従って、ボール形成時にネック部が熱影響を受けて母線
より弱くなる従来のものに比べ、ボンディング作業中の
ネック部の破断やワイヤ倒れ、ワイヤ垂れが発生しない
と共に、製品の温度サイクル寿命試験において繰り返し
温度変化により発生する応力が母線全体に分散して吸収
され、ボンディング線の破断の最頻発生部位であるネッ
ク部の破断は劇的に減少し、信頼性が向上する。Therefore, compared to conventional products where the neck part is affected by heat during ball formation and becomes weaker than the bus bar, the neck part does not break during the bonding process, wire falls down, or wire sag occurs, and the product is repeatedly tested during temperature cycle life tests. Stress caused by temperature changes is dispersed and absorbed over the entire generatrix, dramatically reducing the number of fractures at the neck, which is the most common site of bonding wire fracture, and improving reliability.

■　ネック部が破断し難くなるので、ボンディング線の
線径を微細化でき、これに伴いボンディングピッチの短
縮化が可能となり、ＬＳＩの高密度実装が図れる。(2) Since the neck part becomes difficult to break, the wire diameter of the bonding wire can be made finer, thereby making it possible to shorten the bonding pitch and achieving high-density mounting of LSIs.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明の一実施例を示す半導体素子用ボンディン
グ線の拡大縦断面図である。The drawing is an enlarged vertical cross-sectional view of a bonding wire for a semiconductor device showing an embodiment of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 　高純度Ａｇ又はＡｇ合金からなる芯線の外周面に高純
度Ｐｄ又はＰｄ合金からなる被覆材を被覆したことを特
徴とする半導体素子用ボンディング線。A bonding wire for a semiconductor device, characterized in that a core wire made of high-purity Ag or an Ag alloy is covered with a covering material made of high-purity Pd or a Pd alloy.
JP2192799A 1990-07-20 1990-07-20 Bonding wire for semiconductor element Pending JPH0479243A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2192799A JPH0479243A (en) 1990-07-20 1990-07-20 Bonding wire for semiconductor element
US07/729,226 US5364706A (en) 1990-07-20 1991-07-12 Clad bonding wire for semiconductor device
MYPI91001293A MY107874A (en) 1990-07-20 1991-07-18 Clad bonding wire for semiconductor device.
GB9115519A GB2248416B (en) 1990-07-20 1991-07-18 Clad bonding wire for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2192799A JPH0479243A (en) 1990-07-20 1990-07-20 Bonding wire for semiconductor element

Publications (1)

Publication Number Publication Date
JPH0479243A true JPH0479243A (en) 1992-03-12

Family

ID=16297184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2192799A Pending JPH0479243A (en) 1990-07-20 1990-07-20 Bonding wire for semiconductor element

Country Status (1)

Country Link
JP (1) JPH0479243A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005038902A1 (en) * 2003-10-20 2005-04-28 Sumitomo Electric Industries, Limited Bonding wire and integrated circuit device using the same
JP6207793B1 (en) * 2016-04-28 2017-10-04 日鉄住金マイクロメタル株式会社 Bonding wires for semiconductor devices
JP2017212457A (en) * 2016-04-28 2017-11-30 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005038902A1 (en) * 2003-10-20 2005-04-28 Sumitomo Electric Industries, Limited Bonding wire and integrated circuit device using the same
JP6207793B1 (en) * 2016-04-28 2017-10-04 日鉄住金マイクロメタル株式会社 Bonding wires for semiconductor devices
JP2017212457A (en) * 2016-04-28 2017-11-30 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
KR20190020175A (en) * 2016-04-28 2019-02-27 닛데쓰마이크로메탈가부시키가이샤 Bonding wire for semiconductor devices
US11342299B2 (en) 2016-04-28 2022-05-24 Nippon Micrometal Corporation Bonding wire for semiconductor devices

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