JPH0572750B2 - - Google Patents

Info

Publication number
JPH0572750B2
JPH0572750B2 JP59139110A JP13911084A JPH0572750B2 JP H0572750 B2 JPH0572750 B2 JP H0572750B2 JP 59139110 A JP59139110 A JP 59139110A JP 13911084 A JP13911084 A JP 13911084A JP H0572750 B2 JPH0572750 B2 JP H0572750B2
Authority
JP
Japan
Prior art keywords
wire
ball
bonding
conductivity
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59139110A
Other languages
Japanese (ja)
Other versions
JPS6119158A (en
Inventor
Shigemi Yamane
Koichiro Atsumi
Tetsuo Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59139110A priority Critical patent/JPS6119158A/en
Publication of JPS6119158A publication Critical patent/JPS6119158A/en
Publication of JPH0572750B2 publication Critical patent/JPH0572750B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To obtain a copper lead wire having excellent adhesive strength of a ball and conductivity by constituting a bonding wire so that two or more of metals selected from a plurality of specific elements are made to be contained by 0.1-2wt% and the remainder is of copper substantially. CONSTITUTION:A bonding wire is formed so that two or more of elements selected from Be, Sn, Zn, Zr, Ag, Cr and Fe are made to be contained by 0.1- 2wt% and the remainder is of Cu substantially. These additive elements fix H, O, N and C in an alloy, and inhibit the generation of H2, O2, N2 and CO gas, thus obtaining a copper lead wire having superior adhesive strength of a ball and conductivity.

Description

【発明の詳細な説明】[Detailed description of the invention]

〔発明の技術分野〕 本発明は銅系ボンデイングワイヤーに関する。 〔発明の技術的背景及びその問題点〕 ICやLSI等の半導体素子の内部では、例えば、
図面に示すように、半導体チツプ１及びリードフ
インガー２が設けられており、これらを線径10〜
100μ程度のボンデイングワイヤー３で結ぶ構造
となつている。 このボンデイングワイヤー３の接合方法として
は、まずワイヤーの先端をボール状に加熱溶融さ
せ、次にこのボール状の先端を半導体チツプ１に
圧接し、更に弧を描くようにワイヤーを延ばし、
300〜350℃に加熱されたリードフインガー２にワ
イヤー部を再度圧接し、切断することにより、半
導体チツプ１とリードフインガー２とを結線する
ものである。 この種のボンデイングワイヤーとして導電性、
ワイヤー伸び、ワイヤー強度、半導体チツプとの
接合強度（以下ボール接合強度と称す。）及びボ
ール形成性が必要とされており、従来から主に金
線が使用されている。 しかし、近年、価格及び導電性の点からボンデ
イングワイヤーとして、銅線を用いる試みがなさ
れているが、銅線を用いて熱圧接を行なうと、ボ
ール接合強度が十分出ない場合がしばしばあり、
一方、この点を改善しようとすると、導電性が低
下し、双方の特性を満足する銅ボンデイングワイ
ヤーが得られなかつた。 〔発明の目的〕 本発明は、ボール接合強度が良好でかつ導電性
が良好な銅系ボンデイングワイヤーを提供するこ
とを目的とする。 〔発明の概要〕 本発明者らは、ボンデイングワイヤーについて
鋭意研究した結果、ボール接合強度の低下は、主
に形成されたボール中のガスにより生じることを
見い出した。 即ち、半導体チツプ上にこのボールが圧接され
た際、ガスによる空洞が整合部に位置し、接合強
度を低下させること及びこの現象は特に銅線で発
生しやすいことを見い出した。 本発明は、Be、Sn、Zn、Zr、Ag、Cr及びFe
から選択された２種以上の元素を0.1〜２重量％
含有し、残部が実質的に銅であるボデイングワイ
ヤーを提供する。即ち、これらの添加元素は、合
金中のＨ、Ｏ、Ｎ、Ｃを固定し、H2、O2、N2及
びCOガスの発生を抑制する。 しかし、これらの添加量が多すぎると、導電性
を低下させ、一方少なすぎると、効果が生じにく
い。したがつて、上記添加元素の成分範囲は0.1
〜２重量％、更には0.2〜1.8重量％が好ましい。 上記添加元素のうちでも、Ag、Zr及びCrは、
導電性をあまり低下させず、ガス発生防止効果が
高い。しかし、これらの添加量も多すぎると、導
電性を低下させ、一方少なすぎると、効果が生じ
にくい、したがつて、その成分範囲は、0.2〜1.8
重量％、更には0.3〜1.7重量％が好ましい。な
お、本発明のワイヤーは被覆されて使用されても
よい。 以上述べたワイヤーの製造方法を次に述べる。
まず、成分元素を添加して溶解鋳造してインゴツ
トを得、次にこのインゴツトを700〜800℃で熱間
加工し、その後900〜960℃で熱処理し、急冷後、
60％以上の冷間加工を施し、400〜600℃で熱処理
を施す。それにより所望のワイヤーが得られる。 〔発明の実施例〕 本発明の実施例について説明する。第１表に示
す成分のボンデイングワイヤーを製造し、その特
性として、導電性、初期ボール硬度、ワイヤーの
伸び、ワイヤー強度、ボール接合強度及びボール
形成性を測定した。 初期ボール硬度は、ボール圧着時の硬度をい
い、硬度が低いほど、圧着性は良好となる。 又、ワイヤーの伸びは、ワイヤーが破断する迄
の伸びをいい、伸びが大きいほど、断線率が低
い。 又、ボール接合強度は、熱圧着されているボン
デイングワイヤーの接合部に、つり針状のカギを
かけ、真横に引つぱつて、接合部をせん断破壊さ
せるまでの荷重（ｇf）を測定することにより、
得られる。 又、ボール形成性は、ワイヤーの先端がボール
状に溶融した際、酸化するかどうか、空洞ができ
るがどうか、ボールの径のバラツキが大きいか小
さいかという事を測定することにより、判断され
る。 まず、導電性に関しては、実施例１〜５及び比
較例１〜４とも導電性が30％以上であり使用でき
る。 又、初期ボール硬度に関しては、実施例(1)〜(5)
及び比較例(1)、(3)、(4)がビツカース硬度140以下
を示し、使用できる。 又、ワイヤーの伸びに関しては、実施例(1)〜(5)
及び比較例(1)、(3)がAu線より大きい伸びを示し、
有用である。 又、ワイヤー強度に関しては、実施例(1)〜(5)及
び比較例(1)〜(3)がAu線より大きい強度を示し、
有用である。 又、ボール接合強度に関して、実施例(1)〜(5)及
び比較例(2)〜(4)は、接合強度が65（ｇf）以上あ
り、実用的である。 又、ボール形成性は、すべて良好である。 以上の各特性を総合的に考慮すると、本発明の
実施例(1)〜(5)は比較例(1)〜(4)に比べて、優れてい
る。 [Technical Field of the Invention] The present invention relates to copper-based bonding wires. [Technical background of the invention and its problems] Inside a semiconductor device such as an IC or LSI, for example,
As shown in the drawing, a semiconductor chip 1 and lead fingers 2 are provided, and these are wire diameter 10~
It has a structure in which it is connected with a bonding wire 3 of about 100μ. The method for joining this bonding wire 3 is to first heat and melt the tip of the wire into a ball shape, then press the ball-shaped tip to the semiconductor chip 1, and then extend the wire in an arc.
The semiconductor chip 1 and the lead finger 2 are connected by pressing the wire part again to the lead finger 2 heated to 300 to 350°C and cutting it. This kind of bonding wire is conductive,
Wire elongation, wire strength, bonding strength with a semiconductor chip (hereinafter referred to as ball bonding strength), and ball formability are required, and gold wire has traditionally been mainly used. However, in recent years, attempts have been made to use copper wire as bonding wire from the viewpoint of cost and conductivity, but when thermal pressure bonding is performed using copper wire, the ball bonding strength is often insufficient.
On the other hand, when attempts were made to improve this point, the conductivity deteriorated, making it impossible to obtain a copper bonding wire that satisfied both characteristics. [Object of the Invention] An object of the present invention is to provide a copper-based bonding wire that has good ball bonding strength and good conductivity. [Summary of the Invention] As a result of intensive research on bonding wires, the present inventors found that the decrease in ball bonding strength is mainly caused by gas in the formed balls. That is, it has been found that when this ball is pressure-bonded onto a semiconductor chip, a gas cavity is located in the matching area, reducing the bonding strength, and that this phenomenon is particularly likely to occur with copper wire. The present invention deals with Be, Sn, Zn, Zr, Ag, Cr and Fe.
0.1 to 2% by weight of two or more elements selected from
A bodying wire comprising: copper, the remainder being substantially copper; That is, these additive elements fix H, O, N, and C in the alloy and suppress the generation of H 2 , O 2 , N 2 , and CO gas. However, if the amount added is too large, the conductivity will be reduced, while if the amount added is too small, the effect will be difficult to produce. Therefore, the composition range of the above additive element is 0.1
-2% by weight, more preferably 0.2-1.8% by weight. Among the above additive elements, Ag, Zr and Cr are
Highly effective in preventing gas generation without significantly reducing conductivity. However, if the amount of these additives is too large, the conductivity will decrease, while if the amount is too small, the effect will be difficult to produce. Therefore, the component range is 0.2 to 1.8
% by weight, preferably 0.3-1.7% by weight. Note that the wire of the present invention may be used in a coated state. A method for manufacturing the wire described above will be described next.
First, component elements are added and melted and cast to obtain an ingot, then this ingot is hot worked at 700-800℃, then heat treated at 900-960℃, and after quenching,
Cold-worked by 60% or more and heat treated at 400-600℃. The desired wire is thereby obtained. [Embodiments of the Invention] Examples of the present invention will be described. Bonding wires having the components shown in Table 1 were manufactured, and their properties were measured for conductivity, initial ball hardness, wire elongation, wire strength, ball bonding strength, and ball formability. The initial ball hardness refers to the hardness at the time of ball pressure bonding, and the lower the hardness, the better the pressure bonding properties. Further, the elongation of the wire refers to the elongation until the wire breaks, and the larger the elongation, the lower the wire breakage rate. In addition, the ball bonding strength is determined by placing a hook-shaped key on the bonding wire bonded by thermocompression, pulling it straight sideways, and measuring the load (g f ) required to shear the bonded portion. By this,
can get. In addition, ball-forming properties are determined by measuring whether the tip of the wire oxidizes when melted into a ball, whether cavities are formed, and whether the variation in the diameter of the ball is large or small. . First, regarding the conductivity, both Examples 1 to 5 and Comparative Examples 1 to 4 have a conductivity of 30% or more and can be used. Regarding the initial ball hardness, Examples (1) to (5)
Comparative Examples (1), (3), and (4) exhibited a Vickers hardness of 140 or less and could be used. In addition, regarding the elongation of the wire, Examples (1) to (5)
and Comparative Examples (1) and (3) showed greater elongation than the Au wire,
Useful. In addition, regarding the wire strength, Examples (1) to (5) and Comparative Examples (1) to (3) showed greater strength than the Au wire,
Useful. Further, regarding the ball joint strength, Examples (1) to (5) and Comparative Examples (2) to (4) have a joint strength of 65 (g f ) or more, which is practical. In addition, the ball forming properties were all good. Comprehensively considering each of the above characteristics, Examples (1) to (5) of the present invention are superior to Comparative Examples (1) to (4).

〔発明の効果〕〔Effect of the invention〕

本発明は、Be、Sn、Zn、Zr、Ag、Cr及びFe
から選択された２種以上の元素を0.1〜２重量％
含有させることにより、ボール整合強度が良好で
かつ導電性が良好な銅系ボンデイングワイヤーを
提供できる。 The present invention deals with Be, Sn, Zn, Zr, Ag, Cr and Fe.
0.1 to 2% by weight of two or more elements selected from
By containing it, a copper-based bonding wire with good ball alignment strength and good conductivity can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は、半導体素子の一部切り欠き斜視図であ
る。 １……半導体チツプ、２……リードフインガ
ー、３……ボンデイングワイヤー、４……樹脂モ
ールド。 The drawing is a partially cutaway perspective view of a semiconductor element. 1... Semiconductor chip, 2... Lead finger, 3... Bonding wire, 4... Resin mold.

Claims (1)

【特許請求の範囲】 １ Be、Sn、Zn、Zr、Ag、Cr及びFeから選択
された２種以上の元素を0.1〜２重量％含有し、
残部が実質的に銅であるボデイングワイヤー。 ２ Ag、Cr及びZrから選択された２種以上の元
素を0.2〜1.8重量％含有し、残部が実質的に銅で
ある特許請求の範囲第１項に記載のボンデイング
ワイヤー。[Claims] 1 Contains 0.1 to 2% by weight of two or more elements selected from Be, Sn, Zn, Zr, Ag, Cr and Fe,
Bodying wire, the remainder of which is substantially copper. 2. The bonding wire according to claim 1, which contains 0.2 to 1.8% by weight of two or more elements selected from Ag, Cr, and Zr, and the remainder is substantially copper.
JP59139110A 1984-07-06 1984-07-06 Bonding wire Granted JPS6119158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59139110A JPS6119158A (en) 1984-07-06 1984-07-06 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59139110A JPS6119158A (en) 1984-07-06 1984-07-06 Bonding wire

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5054660A Division JPH0727922B2 (en) 1993-02-22 1993-02-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6119158A JPS6119158A (en) 1986-01-28
JPH0572750B2 true JPH0572750B2 (en) 1993-10-12

Family

ID=15237714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59139110A Granted JPS6119158A (en) 1984-07-06 1984-07-06 Bonding wire

Country Status (1)

Country Link
JP (1) JPS6119158A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS633424A (en) * 1986-06-24 1988-01-08 Tatsuta Electric Wire & Cable Co Ltd Copper bonding wire for semiconductor element with excellent wiring property
US4974472A (en) * 1987-02-13 1990-12-04 Honda Giken Kogyo Kabushiki Kaisha Hydraulic power transmission apparatus
US5230519A (en) * 1988-02-16 1993-07-27 Honda Giken Kogyo Kabushiki Kaisha Hydraulically operated power transmission apparatus
JPH02211788A (en) * 1989-02-13 1990-08-23 Hitachi Ltd Inverse magnetic field generator
SG190479A1 (en) * 2011-12-01 2013-06-28 Heraeus Materials Tech Gmbh Secondary alloyed 1n copper wire for bonding in microelectronics device
CN108962860B (en) * 2018-08-15 2020-10-16 芜湖长润特种铜线有限公司 Preparation method of oxidation-resistant bonding copper wire material

Also Published As

Publication number Publication date
JPS6119158A (en) 1986-01-28

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