JPH0819498B2 - Gold wire for semiconductor element bonding - Google Patents
Gold wire for semiconductor element bondingInfo
- Publication number
- JPH0819498B2 JPH0819498B2 JP61133292A JP13329286A JPH0819498B2 JP H0819498 B2 JPH0819498 B2 JP H0819498B2 JP 61133292 A JP61133292 A JP 61133292A JP 13329286 A JP13329286 A JP 13329286A JP H0819498 B2 JPH0819498 B2 JP H0819498B2
- Authority
- JP
- Japan
- Prior art keywords
- gold
- gold wire
- semiconductor element
- bonding
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体素子のチップ電極と外部リードとを接
続するために使用するボンディング用金線に関するもの
である。TECHNICAL FIELD The present invention relates to a bonding gold wire used for connecting a chip electrode of a semiconductor element and an external lead.
（従来の技術とその問題点） 一般に、99.99wt％以上の高純度金にゲルマニウムを
含有せしめることが、ボンディング用金線にとって有効
であるとされている。(Prior Art and Problems Thereof) It is generally said that it is effective for a gold wire for bonding that germanium is contained in high-purity gold of 99.99 wt% or more.
これは、ボンディング用金線に必要とされる金ボール
形状が、真球に近く且つ一定していること、該金線をIC
チップに接着した場合の引張強度及び高温強度が大きい
こと等の要素を充分に満たすものであることによる。This is because the shape of the gold ball required for the bonding gold wire is close to a true sphere and is constant.
This is because it sufficiently satisfies such factors as high tensile strength and high-temperature strength when bonded to a chip.
しかしながら従来は、ゲルマニウムの含有量が0.008w
t％を越えると、全体が硬くなりすぎると共に粒界破断
を起し、金ボール形状がいびつで且つ酸化被膜が形成さ
れるという現象がみられ、もっぱらGeの含有量は0.008w
t％未満にとどめていた。However, in the past, the germanium content was 0.008w.
If it exceeds t%, the whole body becomes too hard and grain boundary fracture occurs, and the phenomenon that the gold ball shape is distorted and an oxide film is formed is observed, and the content of Ge is 0.008w.
It was less than t%.
ところが、上記ボンディング用金線を接着し、且つ樹
脂モールドされた半導体素子を熱サイクル試験（−65℃
〜150℃で2000回）をした場合、該金線では金ボール直
上のネック部が破壊するという現象がみられ、強度不足
によって信頼性を損うことを発見した。However, the semiconductor element bonded with the above bonding gold wire and resin-molded was subjected to a thermal cycle test (-65 ° C).
It has been found that, when subjected to 2,000 cycles at 150 ° C.), the neck portion directly above the gold ball is broken in the gold wire, and reliability is impaired due to insufficient strength.
これは、樹脂と金線という熱膨張率の異なる材料が一
体となっているため、金ボール直上のネック部に応力が
集中して金線の結晶粒界や辷り面に沿って破壊に至るも
のであると考えられる。This is because resin and gold wire, which are materials with different thermal expansion coefficients, are integrated, so stress concentrates on the neck directly above the gold ball, leading to destruction along the crystal grain boundaries and siding surface of the gold wire. Is considered to be.
又、従来の金線では金ボールを形成する時の熱により
金ボールの直上まで加熱されるため、その部分の結晶粒
の粗大化は避けられず、金線に第2,第３の元素を微量添
加せしめて結晶粒の粗大化を防止することも試みられて
いるが、いまだ解決に至っていないのが現状である。Further, in the conventional gold wire, the heat when forming the gold ball is heated to just above the gold ball, so that coarsening of the crystal grains in that part is unavoidable and the second and third elements are added to the gold wire. Attempts have also been made to prevent coarsening of crystal grains by adding a small amount, but the current situation is that it has not been solved yet.
（発明が解決しようとする技術的課題） 以上の問題を解決しようとする本発明の技術的課題
は、従来不適とされていたGe含有量を、さらに大幅に上
まわるGeを含有させることによって、従来の不具合を解
決できることを発見したものであり、金ボールを形成せ
しめる際の熱により金ボール直上のネック部の結晶粒の
粗大化を抑制して、樹脂モールドされた半導体素子にお
けるボンディング用金線の金ボール直上のネック部の破
壊を防止しようとするものである。(Technical problem to be solved by the invention) The technical problem of the present invention to solve the above problems, Ge content was conventionally unsuitable, by containing a much larger Ge, It has been discovered that conventional problems can be solved, and by suppressing the coarsening of crystal grains in the neck portion immediately above the gold ball due to the heat when forming the gold ball, a gold wire for bonding in a resin-molded semiconductor element. It is intended to prevent the neck portion directly above the gold ball from being broken.
（技術的課題を達成するための技術的手段） 以上の技術的課題を達成するための本発明の技術的手
段は、99.99wt％以上の高純度金（Au）に0.02〜0.65wt
％のゲルマニウム（Ge）を含有せしめることである。(Technical Means for Achieving the Technical Problem) The technical means of the present invention for achieving the above technical problem is 0.02-0.65 wt% for high-purity gold (Au) of 99.99 wt% or more.
% Germanium (Ge).
ゲルマニウムは、その含有量が0.02wt％未満ではその
効果が表われず、0.65wt％を越えると硬すぎてボンディ
ング不能となる。If the content of germanium is less than 0.02 wt%, its effect is not exhibited, and if it exceeds 0.65 wt%, it becomes too hard to be bonded.
（発明の効果） 本発明は以上の様な構成にしたことにより下記の効果
を有する。(Effects of the Invention) The present invention has the following effects by having the above-mentioned configuration.
ボンディング金線のボンディング後の強度、即ち破
断荷重，伸び率が大きくなった。The strength of the bonding gold wire after bonding, that is, the breaking load and the elongation rate increased.
金ボールを形成せしめる際の熱によるネック直上の
結晶粒の粗大化を抑制することができ、これにより、ボ
ンディング用金線のボンディング後の強度が大きくなっ
た。よって、樹脂モールドされた半導体素子におけるボ
ンディング用金線の金ボール直上のネック切れを防止す
ることができる。It is possible to suppress the coarsening of the crystal grains directly above the neck due to the heat when forming the gold balls, and this increases the strength of the bonding gold wire after bonding. Therefore, it is possible to prevent the necking of the bonding gold wire on the resin-molded semiconductor element directly above the gold ball.
（実施例） 以下に実施例を示す。(Example) An example is shown below.
表（１）の本発明の実施品１〜15及び比較品１〜４の
試料は99.99wt％の高純度金にゲルマニウムを表中記載
量添加して溶解鋳造し、線引加工と中間熱処理とをくり
返して直径25μｍのAu線に仕上げたものである。また比
較品５は、99.99wt％のAuに0.0080wt％未満のゲルマニ
ウムを含有した従来品の一例として、ゲルマニウムを0.
0040wt％含有したものである。The samples of Examples 1 to 15 and Comparative Examples 1 to 4 of the present invention in Table (1) were melt-cast by adding germanium to 99.99 wt% high-purity gold, and subjected to wire drawing and intermediate heat treatment. This is repeated to finish an Au wire with a diameter of 25 μm. In addition, Comparative product 5 is an example of a conventional product containing less than 0.0080 wt% germanium in 99.99 wt% Au.
0040 wt% contained.
さらに、表（１）中のAg,Fe,Mg,Cu,Caは、99.99wt％
の高純度金に不可避的に混入する不純物の一部を例示し
たものである。Furthermore, Ag, Fe, Mg, Cu, Ca in Table (1) are 99.99 wt%
This is an example of some of the impurities that are inevitably mixed in the high-purity gold.
これら各試料の機械的性質を測定した結果を表（２）
に示す。The results of measuring the mechanical properties of each of these samples are shown in Table (2).
Shown in
尚、表（２）中の破断モードの項のＢはボンディング
用線のボール部直上、Ｃはループの中央部を示すもので
ある。In addition, B in the break mode item in Table (2) indicates directly above the ball portion of the bonding wire, and C indicates the central portion of the loop.
この結果、99.99wt％の高純度金に0.02〜0.65wt％の
ゲルマニウムを含有せしめることにより前記効果を確認
することができた。 As a result, the above effect could be confirmed by adding 0.02-0.65 wt% germanium to 99.99 wt% high-purity gold.
Claims (1)
0.65wt％のゲルマニウム（Ge）を含有してなることを特
徴とする半導体素子のボンディング用金線。1. A high purity gold (Au) of 99.99 wt% or more with 0.02 to
A gold wire for bonding a semiconductor element, which contains 0.65 wt% germanium (Ge).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61133292A JPH0819498B2 (en) | 1986-06-07 | 1986-06-07 | Gold wire for semiconductor element bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61133292A JPH0819498B2 (en) | 1986-06-07 | 1986-06-07 | Gold wire for semiconductor element bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62290836A JPS62290836A (en) | 1987-12-17 |
| JPH0819498B2 true JPH0819498B2 (en) | 1996-02-28 |
Family
ID=15101242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61133292A Expired - Lifetime JPH0819498B2 (en) | 1986-06-07 | 1986-06-07 | Gold wire for semiconductor element bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0819498B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02263447A (en) * | 1989-04-04 | 1990-10-26 | Hitachi Ltd | Bonding wire for semiconductor element |
| JP2756136B2 (en) * | 1989-04-04 | 1998-05-25 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
| JPH0339429A (en) * | 1989-07-07 | 1991-02-20 | Tanaka Denshi Kogyo Kk | Gold wire for bonding in semiconductor device |
| JP2780611B2 (en) * | 1993-09-06 | 1998-07-30 | 三菱マテリアル株式会社 | Gold decorative materials hardened by alloying small amounts of components |
| JP2793550B2 (en) * | 1996-04-04 | 1998-09-03 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
-
1986
- 1986-06-07 JP JP61133292A patent/JPH0819498B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62290836A (en) | 1987-12-17 |
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