JPS63252330A - 金属被膜抵抗の製造方法 - Google Patents
金属被膜抵抗の製造方法Info
- Publication number
- JPS63252330A JPS63252330A JP29381886A JP29381886A JPS63252330A JP S63252330 A JPS63252330 A JP S63252330A JP 29381886 A JP29381886 A JP 29381886A JP 29381886 A JP29381886 A JP 29381886A JP S63252330 A JPS63252330 A JP S63252330A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- aluminum
- metal film
- aluminum wiring
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 17
- 239000002184 metal Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- QKJXFFMKZPQALO-UHFFFAOYSA-N chromium;iron;methane;silicon Chemical compound C.[Si].[Cr].[Fe] QKJXFFMKZPQALO-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 description 3
- 241000981595 Zoysia japonica Species 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29381886A JPS63252330A (ja) | 1986-12-09 | 1986-12-09 | 金属被膜抵抗の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29381886A JPS63252330A (ja) | 1986-12-09 | 1986-12-09 | 金属被膜抵抗の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63252330A true JPS63252330A (ja) | 1988-10-19 |
| JPH0511668B2 JPH0511668B2 (enrdf_load_stackoverflow) | 1993-02-16 |
Family
ID=17799549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29381886A Granted JPS63252330A (ja) | 1986-12-09 | 1986-12-09 | 金属被膜抵抗の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63252330A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0258227A (ja) * | 1988-08-24 | 1990-02-27 | Nippon Denso Co Ltd | 半導体装置 |
| US6242792B1 (en) | 1996-07-02 | 2001-06-05 | Denso Corporation | Semiconductor device having oblique portion as reflection |
| US6274452B1 (en) | 1996-11-06 | 2001-08-14 | Denso Corporation | Semiconductor device having multilayer interconnection structure and method for manufacturing the same |
| JP2009145834A (ja) * | 2007-12-18 | 2009-07-02 | Seiko Epson Corp | 半導体装置、電気光学装置、及び電子機器 |
| JP2013007900A (ja) * | 2011-06-24 | 2013-01-10 | Seiko Epson Corp | 液晶装置および投射型表示装置 |
-
1986
- 1986-12-09 JP JP29381886A patent/JPS63252330A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0258227A (ja) * | 1988-08-24 | 1990-02-27 | Nippon Denso Co Ltd | 半導体装置 |
| US6242792B1 (en) | 1996-07-02 | 2001-06-05 | Denso Corporation | Semiconductor device having oblique portion as reflection |
| US6274452B1 (en) | 1996-11-06 | 2001-08-14 | Denso Corporation | Semiconductor device having multilayer interconnection structure and method for manufacturing the same |
| JP2009145834A (ja) * | 2007-12-18 | 2009-07-02 | Seiko Epson Corp | 半導体装置、電気光学装置、及び電子機器 |
| JP2013007900A (ja) * | 2011-06-24 | 2013-01-10 | Seiko Epson Corp | 液晶装置および投射型表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0511668B2 (enrdf_load_stackoverflow) | 1993-02-16 |
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