JPS6322637B2 - - Google Patents

Info

Publication number
JPS6322637B2
JPS6322637B2 JP56176436A JP17643681A JPS6322637B2 JP S6322637 B2 JPS6322637 B2 JP S6322637B2 JP 56176436 A JP56176436 A JP 56176436A JP 17643681 A JP17643681 A JP 17643681A JP S6322637 B2 JPS6322637 B2 JP S6322637B2
Authority
JP
Japan
Prior art keywords
layer
emitting layer
electrode
light
central region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56176436A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5878488A (ja
Inventor
Shigeyuki Akiba
Katsuyuki Uko
Kazuo Sakai
Juichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP56176436A priority Critical patent/JPS5878488A/ja
Publication of JPS5878488A publication Critical patent/JPS5878488A/ja
Publication of JPS6322637B2 publication Critical patent/JPS6322637B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP56176436A 1981-11-05 1981-11-05 分布帰還形半導体レーザの駆動方法 Granted JPS5878488A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56176436A JPS5878488A (ja) 1981-11-05 1981-11-05 分布帰還形半導体レーザの駆動方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56176436A JPS5878488A (ja) 1981-11-05 1981-11-05 分布帰還形半導体レーザの駆動方法

Publications (2)

Publication Number Publication Date
JPS5878488A JPS5878488A (ja) 1983-05-12
JPS6322637B2 true JPS6322637B2 (enrdf_load_stackoverflow) 1988-05-12

Family

ID=16013667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56176436A Granted JPS5878488A (ja) 1981-11-05 1981-11-05 分布帰還形半導体レーザの駆動方法

Country Status (1)

Country Link
JP (1) JPS5878488A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60178685A (ja) * 1984-02-27 1985-09-12 Nippon Telegr & Teleph Corp <Ntt> 単一軸モ−ド半導体レ−ザ装置
GB8406432D0 (en) * 1984-03-12 1984-04-18 British Telecomm Semiconductor devices
JPS61255086A (ja) * 1985-05-08 1986-11-12 Mitsubishi Electric Corp 半導体レ−ザ装置
JPH0642577B2 (ja) * 1985-06-19 1994-06-01 日本電信電話株式会社 多電極分布帰還型半導体レーザの駆動方法
JPS62245690A (ja) * 1986-04-18 1987-10-26 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
FR2598862B1 (fr) * 1986-05-16 1994-04-08 Bouley Jean Claude Laser a semi-conducteur a reaction distribuee et a longueur d'onde continument accordable.
GB2197531B (en) * 1986-11-08 1991-02-06 Stc Plc Distributed feedback laser
JP2533355B2 (ja) * 1988-03-11 1996-09-11 国際電信電話株式会社 分布帰還形半導体レ―ザ装置およびその電流注入方法
JP2631716B2 (ja) * 1988-09-20 1997-07-16 富士通株式会社 半導体発光装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513976Y2 (enrdf_load_stackoverflow) * 1975-01-17 1980-03-29

Also Published As

Publication number Publication date
JPS5878488A (ja) 1983-05-12

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