JPS5878488A - 分布帰還形半導体レーザの駆動方法 - Google Patents

分布帰還形半導体レーザの駆動方法

Info

Publication number
JPS5878488A
JPS5878488A JP56176436A JP17643681A JPS5878488A JP S5878488 A JPS5878488 A JP S5878488A JP 56176436 A JP56176436 A JP 56176436A JP 17643681 A JP17643681 A JP 17643681A JP S5878488 A JPS5878488 A JP S5878488A
Authority
JP
Japan
Prior art keywords
semiconductor laser
distributed feedback
current
light
feedback semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56176436A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322637B2 (enrdf_load_stackoverflow
Inventor
Shigeyuki Akiba
秋葉　重行
Katsuyuki Uko
宇高　勝之
Kazuo Sakai
堺　和夫
Yuichi Matsushima
松島　裕一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP56176436A priority Critical patent/JPS5878488A/ja
Publication of JPS5878488A publication Critical patent/JPS5878488A/ja
Publication of JPS6322637B2 publication Critical patent/JPS6322637B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP56176436A 1981-11-05 1981-11-05 分布帰還形半導体レーザの駆動方法 Granted JPS5878488A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56176436A JPS5878488A (ja) 1981-11-05 1981-11-05 分布帰還形半導体レーザの駆動方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56176436A JPS5878488A (ja) 1981-11-05 1981-11-05 分布帰還形半導体レーザの駆動方法

Publications (2)

Publication Number Publication Date
JPS5878488A true JPS5878488A (ja) 1983-05-12
JPS6322637B2 JPS6322637B2 (enrdf_load_stackoverflow) 1988-05-12

Family

ID=16013667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56176436A Granted JPS5878488A (ja) 1981-11-05 1981-11-05 分布帰還形半導体レーザの駆動方法

Country Status (1)

Country Link
JP (1) JPS5878488A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60178685A (ja) * 1984-02-27 1985-09-12 Nippon Telegr & Teleph Corp <Ntt> 単一軸モ−ド半導体レ−ザ装置
JPS61179588A (ja) * 1984-03-12 1986-08-12 ブリテイシユ・テレコミユニケ−シヨンズ・パブリツク・リミテツド・カンパニ リツジ導波路半導体素子
JPS61255086A (ja) * 1985-05-08 1986-11-12 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS61290789A (ja) * 1985-06-19 1986-12-20 Nippon Telegr & Teleph Corp <Ntt> 多電極分布帰還型半導体レーザの駆動方法
JPS62245690A (ja) * 1986-04-18 1987-10-26 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
FR2598862A1 (fr) * 1986-05-16 1987-11-20 Bouley Jean Claude Laser a semi-conducteur a reaction distribuee et a longueur d'onde continument accordable.
EP0267667A3 (en) * 1986-11-08 1988-11-09 Stc Plc Distributed feedback laser
JPH0282681A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 半導体発光装置
US4932034A (en) * 1988-03-11 1990-06-05 Kokusai Denshin Denwa Kabushiki Kaisha Distributed feedback semiconductor laser device and current injection

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5190770U (enrdf_load_stackoverflow) * 1975-01-17 1976-07-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5190770U (enrdf_load_stackoverflow) * 1975-01-17 1976-07-20

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60178685A (ja) * 1984-02-27 1985-09-12 Nippon Telegr & Teleph Corp <Ntt> 単一軸モ−ド半導体レ−ザ装置
JPS61179588A (ja) * 1984-03-12 1986-08-12 ブリテイシユ・テレコミユニケ−シヨンズ・パブリツク・リミテツド・カンパニ リツジ導波路半導体素子
JPS61255086A (ja) * 1985-05-08 1986-11-12 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS61290789A (ja) * 1985-06-19 1986-12-20 Nippon Telegr & Teleph Corp <Ntt> 多電極分布帰還型半導体レーザの駆動方法
JPS62245690A (ja) * 1986-04-18 1987-10-26 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
FR2598862A1 (fr) * 1986-05-16 1987-11-20 Bouley Jean Claude Laser a semi-conducteur a reaction distribuee et a longueur d'onde continument accordable.
JPS62281489A (ja) * 1986-05-16 1987-12-07 ジヤン−クロ−ド・ブ−レイ 連続的に同調可能な波長をもつ分布フイ−ドバツク形半導体レ−ザ
EP0267667A3 (en) * 1986-11-08 1988-11-09 Stc Plc Distributed feedback laser
US4813054A (en) * 1986-11-08 1989-03-14 Stc Plc Distributed feedback laser
US4932034A (en) * 1988-03-11 1990-06-05 Kokusai Denshin Denwa Kabushiki Kaisha Distributed feedback semiconductor laser device and current injection
JPH0282681A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 半導体発光装置

Also Published As

Publication number Publication date
JPS6322637B2 (enrdf_load_stackoverflow) 1988-05-12

Similar Documents

Publication Publication Date Title
US7174058B2 (en) Traveling-wave optoelectronic wavelength converter
JP2768940B2 (ja) 単一波長発振半導体レーザ装置
JPH0817263B2 (ja) 干渉計半導体レーザ
JPH06103778B2 (ja) 半導体分布帰還形レーザを含む光学装置およびその駆動方法
JPS63244783A (ja) 波長変換素子
JPS5878488A (ja) 分布帰還形半導体レーザの駆動方法
JP2002084033A (ja) 分布帰還型半導体レーザ
JPH0732279B2 (ja) 半導体発光素子
JP2861858B2 (ja) 多重量子井戸レーザダイオード
JPH08334796A (ja) 光波長変換集積素子
JPH07231132A (ja) 半導体光装置
JPS63116489A (ja) 光集積回路
US6356382B1 (en) Optical wavelength converter with active waveguide
JPH0147031B2 (enrdf_load_stackoverflow)
JP2751558B2 (ja) 集積型光半導体装置およびその駆動方法
JP2544410B2 (ja) 波長可変半導体装置
JPS61107781A (ja) 単一軸モ−ド半導体レ−ザ装置
JPH0449273B2 (enrdf_load_stackoverflow)
JP3797735B2 (ja) 光集積回路およびその製造方法
JPH03105992A (ja) 光半導体素子
JPS59184585A (ja) 単一軸モ−ド半導体レ−ザ
JPH02271583A (ja) レーザ集積化光変調器
JPH0555686A (ja) 半導体分布帰還型レーザ装置
JP4448651B2 (ja) 波長変換素子
JPS6332979A (ja) 半導体レ−ザ