JPS63224885A - Solid phase joining method and its device - Google Patents

Abstract

PURPOSE:To ensure a low temp. solid phase joining by subjecting the welding face of the body to be welded inside a vacuum vessel to ionic or atomic projec tion, subjecting the released atom, molecule and secondary ion to mass spectrometry and effecting a pressure-welding by confirming the complete remov al of a adsorption layer and oxide film. CONSTITUTION:The joining face of the upper copper joining material 6 and lower copper joining material 7 arranged in opposition inside a vacuum con tainer 1 is subjected to atomic projection by an atomic source 5 respectively. The released atom, molecule and secondary ion generated at that time are detected by a secondary ion mass spectrometer 4 to confirm the complete remov al of the absorption layer and oxide film on the joining face. Thereafter, both copper joining members 6, 7 are approached to pressure-weld the joining face. Being no inclusion at all on the joining face this low temp. solid phase joining is well ensured.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a method and apparatus for joining metals and ceramics at a temperature around room temperature and without causing large distortion to the joined product, and in particular to an electronic device. .

The present invention relates to a solid-phase joining method and apparatus suitable for joining objects such as optical parts and precision mechanical parts that must be joined with high precision without applying distortion, deformation, or heat to materials.

[Conventional technology]

Previously, the Japan Institute of Metals Autumn Conference General Lecture Summary Kana (1986
As described in October 2006, p. 4.1-7), a method of cleaning the joint surfaces by ion irradiation and then pressing them together in an ultra-high vacuum, and an ultra-high vacuum press-welding apparatus therefor are known.

[Problem that the invention seeks to solve]

In the conventional technology, the bonding surface is cleaned by ion irradiation, but the degree of cleaning is not quantitatively understood. In other words, since the appropriate irradiation time determined in advance through preliminary studies is used, the actual activation level of the bonded surface is unknown, and in practice,
This poses a problem in terms of reliability.

The degree of activity (cleanliness) of the bonding surface depends on the contamination status of the bonding surface (oxide film, oil, fat, moisture) before irradiation, moisture, oil, and gas amount adsorbed on the inner wall of the vacuum chamber, the ion irradiation conditions, etc. It is not determined solely by the ion irradiation time because it is influenced by the ion irradiation time. Therefore, for each bonding process, it is necessary to quantitatively understand the degree of activity of the bonding surface, which largely controls the reliability of the bonded portion.

In the conventional technology, there was a problem with the reliability of the joint because no consideration was given to quantitatively understanding the degree of activity of the joint surface.

An object of the present invention is to provide a solid-phase bonding method and an apparatus therefor, which are capable of obtaining a highly reliable bonded part by quantitatively understanding the activity of the bonding surface and bonding.

[Means for solving problems]

The above purpose is to irradiate the bonding surface with ions or atoms,
While removing the contaminated layer, we detected 9 atomic molecules and secondary ions emitted from the bonding surface, and after confirming that the adsorption layer, oxide film, etc. on the surface to be contacted were completely removed, we removed the contaminated layer immediately. This is achieved by bringing the joint surfaces into contact. Moreover, this can be achieved by using an apparatus in which a secondary ion mass spectrometer is provided in a vacuum container.

[Effect]

The surfaces of objects to be joined are covered with contaminant layers such as oxide films, oils and fats, moisture, and gas adsorption layers, and it is possible to join these surfaces without heating them to high temperatures or without causing large plastic deformation. That is impossible. Therefore, it is necessary to remove contaminants from the surface, and there is a method using ion or atom irradiation. After completely removing the contaminated layer by sputtering, if the clean surfaces are immediately brought into close contact without recontaminating them, bonding can be achieved at low temperatures without large plastic deformation. However, it is unclear whether the contaminated layer is completely removed by ion or atom irradiation, and in order to obtain highly reliable joints, it is necessary to quantitatively understand the activity (cleanliness) of the joint surface. As a method, a secondary ion mass spectrometer is placed inside a vacuum container. And atoms released by ion or atom irradiation during sputtering.

Detects molecules and secondary ions, oxidized films, oils and fats.

The end point of the contaminated layer is when ions of elements constituting contaminants such as moisture and adsorbed gas are no longer detected. Note that the emitted atoms and molecules are ionized by the ionization mechanism built into the mass spectrometer, so
Next, it is detected by an ion mass spectrometer. This makes it possible to quantitatively determine when the contaminant layer has been completely removed.6 [Example] An example of a bonding method and an apparatus thereof will be described with reference to FIG.

A pressurizing rod 2, which is operated by a pressurizing system consisting of a hydraulic cylinder, a hydraulic pump, etc., is placed in the vacuum container 1. A vacuum evacuation system 3 consisting of an oil rotary pump, a turbo molecular pump, etc. is arranged, and a secondary ion mass spectrometer 4 with an ionization mechanism built in, two atom sources 5, and two copper Bonding materials 6 and 7 are arranged. Note that the upper copper bonding material 6 is attached to the pressure rod 2, and the lower steel bonding material 7 is attached to the lower jig 8. and upper and lower bonding materials 6.7
are facing each other, and 4
Two atom sources 5 are installed in the vacuum chamber 1 so that Ar atoms can be irradiated from a direction of 5 degrees. On the other hand, 2
The sensor section of the secondary ion mass spectrometer 4 is installed at a location where the detection intensity of two atomic molecules and secondary ions released from the junction surface by irradiation with Ar atoms is highest.

Joining is done in the following manner.

The inside of the vacuum container 1 is evacuated to 10-7 Torr. After that, ultra-high purity Ar gas was introduced into the atom source 5.

The bonding surfaces of the upper and lower bonded bodies 6 and 7 are irradiated with Ar atoms. Contaminants (oxides, moisture, fats, oils, adsorbed gases, etc.) on the bonding surface can be removed by irradiation with this Ar particle, but at this time, atoms emitted from the bonding surface are 9 molecules and secondary ions are detected. Ar atoms are then Immediately after stopping the irradiation, the pressure rod 2 is lowered, and the upper bonding material 6 and the lower bonding material 7 are butted against each other to perform in-phase bonding. At this time, in the case of materials with poor bondability, bonding can be facilitated by applying a predetermined pressure to the bonding surfaces or by heating the bonded portion to a temperature below the common phase line of the materials to be bonded.

As a result of joining copper to each other at room temperature using the procedure described above, a higher joining strength than before was obtained.

〔Effect of the invention〕

According to the present invention, since in-phase bonding is performed after the contamination layer is completely removed, a highly reliable bonded portion can be obtained.

[Brief explanation of drawings]

The drawing is a sectional view of a solid phase bonding device according to the present invention. DESCRIPTION OF SYMBOLS 1... Vacuum container, 2... Pressure rod, 3... Vacuum exhaust system, 4... Secondary ion mass spectrometry section, 5... Atom source, 6... Upper copper bonding material, 7...lower copper bonding material,
8...Lower jig/

Claims (1)

[Claims] 1. In a method of irradiating two or more surfaces to be joined with ions or atoms and then bringing the irradiated surfaces into contact with each other to perform solid phase bonding at a low temperature, during irradiation with ions or atoms,
Atoms, molecules, and secondary ions emitted from the surfaces to be joined are monitored using a mass spectrometer, and after confirming that the adsorption layer and oxide film on the surfaces to be joined are completely removed, the surfaces to be joined are immediately connected to each other. A solid phase bonding method characterized by contacting. 2. Ionization that detects atoms, molecules, and secondary ions released from the bonding surface by irradiation with ions or atoms in a solid-phase bonding device consisting of a vacuum container, an ion gun or atom gun, a bonding material pressurizing mechanism, and a vacuum exhaust device. A solid phase bonding device characterized in that a secondary ion mass spectrometer with a built-in mechanical part is provided in a vacuum container.