JPS63212077A - Solid phase joining method - Google Patents
Solid phase joining methodInfo
- Publication number
- JPS63212077A JPS63212077A JP4028887A JP4028887A JPS63212077A JP S63212077 A JPS63212077 A JP S63212077A JP 4028887 A JP4028887 A JP 4028887A JP 4028887 A JP4028887 A JP 4028887A JP S63212077 A JPS63212077 A JP S63212077A
- Authority
- JP
- Japan
- Prior art keywords
- joining
- bonding
- joined
- alloy foil
- solid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005304 joining Methods 0.000 title claims abstract description 22
- 239000007790 solid phase Substances 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims description 16
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 20
- 239000011888 foil Substances 0.000 claims abstract description 13
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000000356 contaminant Substances 0.000 claims description 4
- 238000011109 contamination Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 42
- 229910052802 copper Inorganic materials 0.000 abstract description 16
- 239000010949 copper Substances 0.000 abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は′、金金属上セラミックス常温付近の温度で、
かつ、接合物に大きな歪みを与えないで接合する方法に
係り、特に電子デバイス、光部品。[Detailed Description of the Invention] [Industrial Field of Application] The present invention is directed to the production of ceramics on gold metal at a temperature around room temperature,
Also, it relates to a method of bonding without giving large distortion to the bonded objects, especially electronic devices and optical components.
精密機械部品などで、材料に歪みゃ変形、熱を与えずに
高精度に接合しなければならない部品に対して好適な固
相接合方法に関する。The present invention relates to a solid-phase joining method suitable for parts such as precision mechanical parts that must be joined with high precision without straining, deforming, or applying heat to materials.
従来、日刊工業新聞(昭和61年3月27日発行)に記
載のように、接合表面に付着している酸化物、水分油脂
分などの汚染物をイオンガスで完全に除去し、超高真空
中で材料を重ね合おせて接合する方法が知られておりこ
の方法によれば面接合表面の凹凸を1μm以下に抑えて
おく必要がある。Conventionally, as described in the Nikkan Kogyo Shimbun (published March 27, 1986), contaminants such as oxides, water, oil, and fat adhering to the bonding surface are completely removed using ion gas, and ultra-high vacuum A method is known in which materials are overlapped and bonded, and according to this method, it is necessary to suppress the unevenness of the surface to be bonded to 1 μm or less.
従来法では次のような工程が必要不可欠である。 In the conventional method, the following steps are essential.
(1)超高真空域(10−8〜10−”Torr )に
まで排気する必要がある。(1) It is necessary to evacuate to an ultra-high vacuum range (10-8 to 10-'' Torr).
(2)面接合表面の面粗さを1μm以下にまで加工しな
ければならない。(2) The surface roughness of the surface to be bonded must be processed to 1 μm or less.
したがって、超高真空に排気するための高価な設備が必
要となり、また、排気に要する時間もかなり長い。さら
に、接合面の表面粗さを細かくするための加工時間も長
い。以上のことから、経済的にみると、従来法は非常に
高価な接合法であるといえる。一方、接合面同士を重ね
合わせるだけであるから、大面積の接合では未接合部が
生じやすいという問題点もあった。Therefore, expensive equipment for evacuation to ultra-high vacuum is required, and the time required for evacuation is also quite long. Furthermore, the machining time required to make the surface roughness of the joint surface fine is also long. From the above, it can be said that from an economic point of view, the conventional method is a very expensive joining method. On the other hand, since the bonded surfaces are simply overlapped, there is also the problem that unbonded portions are likely to occur when bonding a large area.
本発明の目的は、室温付近の温度下で、経済的に、かつ
、大面積の接合が可能な固相接合方法を提供することに
ある。An object of the present invention is to provide a solid-phase bonding method that is economical and capable of bonding large areas at temperatures around room temperature.
問題点を解決するための手段として、接合面の間に、表
面の汚染層を除去した25〜75重量%のインジウムを
含有するI n −S n合金箔をインサート材として
挿入する。すなわち、具体的には次のような接合プロセ
スにすることにより問題点が解決される。As a means to solve the problem, an In-Sn alloy foil containing 25 to 75% by weight of indium from which the contamination layer on the surface has been removed is inserted as an insert material between the bonding surfaces. That is, specifically, the problem can be solved by using the following joining process.
真空中にて被接合材及びSn含有量が25〜75重量%
のIn−Sn合金インサート材表面の汚染層をイオンも
しくは原子の照射により除去し、その後、これらの表面
を再汚染することなく重ね合わせ、固相状態で接合させ
る。The material to be joined and the Sn content are 25 to 75% by weight in a vacuum.
The contamination layer on the surface of the In-Sn alloy insert material is removed by irradiation with ions or atoms, and then these surfaces are overlapped and bonded in a solid state without being re-contaminated.
本発明で行なわれる技術的手段は次のような働きをして
いる。The technical means implemented in the present invention work as follows.
真空中で接合面及びIn−Sn合金箔の両表面にイオン
あるいは原子を照射するのは、それらの表面の汚染物(
酸化皮膜、水分、油脂分など)を除去し、表面を活性化
するためである。また、真空中で照射するのは、照射後
の表面の再汚染を防止するためである。Irradiating ions or atoms to both the bonding surface and the surface of the In-Sn alloy foil in vacuum removes contaminants (
This is to remove oxide film, moisture, oil and fat, etc.) and activate the surface. Furthermore, the purpose of irradiating in vacuum is to prevent re-contamination of the surface after irradiation.
接合面の間に25〜75重量%の錫(S n)を含有す
るIn−Sn合金箔を挿入するのは、接合部の密着性向
上及び化学結合性を促進するためである。上記組成のI
n−Sn合金は軟質でかつ、安定な酸化皮膜を形成しに
くいため同相接合のインサート材として非常に好適であ
る。したがって、従来法のように接合雰囲気を超高真空
に維持する必要もなく、また、接合面の表面粗さを1μ
m以下に仕上げる必要もない、さらに、接合面のうねり
の影響も軟質なI n −S n合金を挿入するために
小さく、大面積の接合が可能である。The reason for inserting the In-Sn alloy foil containing 25 to 75% by weight of tin (Sn) between the joint surfaces is to improve the adhesion of the joint and promote chemical bonding. I of the above composition
Since the n-Sn alloy is soft and does not easily form a stable oxide film, it is very suitable as an insert material for in-phase bonding. Therefore, unlike conventional methods, there is no need to maintain the bonding atmosphere at an ultra-high vacuum, and the surface roughness of the bonded surface can be reduced to 1 μm.
There is no need to finish the joint to a thickness of less than m.Furthermore, since the soft In--Sn alloy is inserted, the effect of waviness on the joint surface is small, and a large area can be joined.
銅同士の接合例について記述する。 An example of joining copper to copper will be described.
直径Lowの銅同士の突き合わせ接合において、インサ
ート材としてInの含有量を変えたIn−Sn合金箔、
純In箔及び純Sn箔を用いた。第1図により接合の手
順を説明する。In-Sn alloy foil with varying In content used as an insert material in butt joining between low diameter copper pieces;
Pure In foil and pure Sn foil were used. The joining procedure will be explained with reference to FIG.
銅接合材1,2及びインサート材3を接合室4の中に設
置し、室内を10−’Torrまで排気する。The copper bonding materials 1 and 2 and the insert material 3 are placed in the bonding chamber 4, and the chamber is evacuated to 10-'Torr.
なお、銅接合材の表面粗さは3〜5μmである。Note that the surface roughness of the copper bonding material is 3 to 5 μm.
厚さ80μmにまで圧延されたインサート材3は下方に
設置された銅接合材2の接合面上に設置されている。次
に超高純度アルゴンガス(Arガス)をアトムソース5
,6に流入して、上部鋼接合材1の接合面及びインサー
ト材3表面にAr原子を照射し、表面上の汚染層を除去
する。しかる後。The insert material 3 rolled to a thickness of 80 μm is placed on the bonding surface of the copper bonding material 2 placed below. Next, add ultra-high purity argon gas (Ar gas) to Atom Source 5.
. After that.
上部鋼接合材1を下降させてインサート材3と重ね合わ
せて互いに固相接合させる。なお、この接合では接合面
には約0 、5 kg/ na”の応力が負荷されてい
た。そして、次に上部銅接合材1を所定の位置に上昇さ
せる。なお、この時インサート材3は上部銅接合材1表
面に接合されている。ここで再度、アトムソース5,6
によりインサート材表面及び下部接合材2の接合面にA
r原子を照射して、表面を活性化する。しかる後、上部
接合材1を下降させて下部鋼接合材2と重ね合わせて同
相接合させる。結果的には、インサート材を介して上部
銅接合材1と下部銅接合材2とは固相接合されたことに
なる。The upper steel bonding material 1 is lowered and overlapped with the insert material 3 to be solid phase bonded to each other. In addition, in this joining, a stress of approximately 0.5 kg/na" was applied to the joining surface. Then, the upper copper joining material 1 was raised to a predetermined position. At this time, the insert material 3 was It is bonded to the surface of the upper copper bonding material 1. Here again, the atom sources 5 and 6
A on the insert material surface and the bonding surface of the lower bonding material 2.
The surface is activated by irradiation with r atoms. Thereafter, the upper joining material 1 is lowered and overlapped with the lower steel joining material 2 to be joined in phase. As a result, the upper copper bonding material 1 and the lower copper bonding material 2 are solid phase bonded via the insert material.
以上のような手順でインサート材3の材質をかえて接合
した接合材の引張試験を実施して第2図に示すような結
果が得られた。同図に示すように、Snの含有量が25
〜75重量%のIn−Sn合金をインサート材とした時
に高い接合強度が得られている。そして、接合後、48
時間放置した後の強度は向上している。一方、アトムソ
ースが接合表面の汚染物を除去しないで接合した場合は
。A tensile test was carried out on the bonding materials joined by changing the material of the insert material 3 in the above procedure, and the results shown in FIG. 2 were obtained. As shown in the figure, the Sn content is 25
High bonding strength was obtained when ~75% by weight In-Sn alloy was used as the insert material. After joining, 48
The strength is improved after being left for a while. On the other hand, if the atom source joins without removing contaminants from the joining surface.
全く接合しなかった。これらの結果からSn含有量が2
5〜75重量パーセントのIn−Sn合金が適正である
ことがわかる。It didn't connect at all. From these results, the Sn content is 2
It is found that an In-Sn alloy of 5 to 75 weight percent is suitable.
上記実施例は、室温で接合した場合であるが。In the above example, bonding was performed at room temperature.
In−Sn合金の固相線以下の温度で接合すれば、さら
に高い接合強度が得られる。例えば100℃に加熱した
銅を上記手順で接合すれば、30MPaの引張強度が得
られた。これは、加熱により、In−3n合金の軟化に
よる接合面の密着性向上及び原子の拡散のためである。Even higher bonding strength can be obtained by bonding at a temperature below the solidus line of the In-Sn alloy. For example, when copper heated to 100° C. was joined using the above procedure, a tensile strength of 30 MPa was obtained. This is because heating softens the In-3n alloy to improve adhesion of the bonding surface and to diffuse atoms.
また、加熱によるIn−Sn合金の軟化で接合面同士を
東ね合わせた時に接合面に負荷する荷重をほとんど零(
接合材の自重程度の荷重)としても接合できる。In addition, the softening of the In-Sn alloy by heating reduces the load on the joint surfaces to almost zero (
It can also be joined with a load equivalent to the own weight of the joining material.
一方、接合後、接合材を接合室外に取り出した後、加熱
処理を施しても接合強度は向上する。これは、加熱によ
り拡散が促進し、接合部に存在した欠陥(ボイド)が消
滅したためである以上、銅同士の接合例について説明し
たが、銅とアルミナとの接合、銅とSiとの接合でも良
好な結果が得られた。On the other hand, even if heat treatment is performed after the bonding material is taken out of the bonding chamber after bonding, the bonding strength is improved. This is because heating promotes diffusion and eliminates defects (voids) that existed in the bonded area.Although we have explained the example of bonding copper to copper, bonding of copper and alumina and bonding of copper and Si also apply. Good results were obtained.
[発明の効果〕
本発明によれば、I n −S n合金をインサート材
として用いているので、超高真空にまで排気する必要が
なくこのため、活性化が容易となる。[Effects of the Invention] According to the present invention, since the In-Sn alloy is used as the insert material, there is no need to evacuate to an ultra-high vacuum, and therefore activation becomes easy.
また、柔軟であるため密着化が容易となり、接合面の表
面仕上げに特別の配慮は不要となる。更に、大面積の接
合が可能となる。In addition, since it is flexible, it is easy to adhere to it, and no special consideration is required for the surface finish of the bonding surface. Furthermore, it becomes possible to bond a large area.
第1図は本発明の固相接合方法を説明するための模式図
、第2図は接合実験結果を示すグラフである。
第 1 図
1−・二軒個ぼ席 4−浄介I
Z・・−下g″P衣局剰イト伏 5−一一了トムンー
ス3・・−インサー)訣 乙−−−了しムノース
Z Z 図
Sn含滴量/圭量〆FIG. 1 is a schematic diagram for explaining the solid phase bonding method of the present invention, and FIG. 2 is a graph showing the results of a bonding experiment. 1st Figure 1-・Nikenpachibo seat 4-Josuke I Z...-lower g''P clothes station cover 5-11-lose tomoose 3...-inser) tip Otsu---completed munose Z Z Fig.Sn droplet content / Kei amount〆
Claims (1)
させて固相接合する方法において、接合面の間に25〜
75重量%の錫を含有するIn−Sn合金箔を挿入し、
真空中にて両接合面及びIn−Sn合金箔の両表面にイ
オンあるいは原子を照射し、それらの表面上の汚染層を
除去した後、真空雰囲気内で、直ちにIn−Sn合金箔
を介して接合面同士を重ね合わせることを特徴とする固
相接合方法。 2、特許請求の範囲第1項の方法において、接合中もし
くは接合後、接合部をIn−Sn合金の固相線以下の温
度にまで加熱し、所定時間保持することを特徴とする固
相接合方法。[Claims] 1. In a method of solid phase welding by bringing the joint surfaces into contact after removing a contamination layer on the joint surfaces, there is a
Inserting an In-Sn alloy foil containing 75% by weight of tin,
After irradiating both bonding surfaces and both surfaces of the In-Sn alloy foil with ions or atoms in a vacuum to remove the contaminant layer on those surfaces, the In-Sn alloy foil is immediately irradiated with ions or atoms in a vacuum atmosphere. A solid phase bonding method characterized by overlapping bonding surfaces. 2. In the method of claim 1, solid phase joining is characterized in that during or after joining, the joined part is heated to a temperature below the solidus line of the In-Sn alloy and maintained for a predetermined period of time. Method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4028887A JPH0655357B2 (en) | 1987-02-25 | 1987-02-25 | Solid phase bonding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4028887A JPH0655357B2 (en) | 1987-02-25 | 1987-02-25 | Solid phase bonding method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63212077A true JPS63212077A (en) | 1988-09-05 |
JPH0655357B2 JPH0655357B2 (en) | 1994-07-27 |
Family
ID=12576416
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4028887A Expired - Fee Related JPH0655357B2 (en) | 1987-02-25 | 1987-02-25 | Solid phase bonding method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0655357B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5188280A (en) * | 1989-04-28 | 1993-02-23 | Hitachi Ltd. | Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0851899A (en) * | 1994-08-10 | 1996-02-27 | Ogura Masako | Tool for fastening terminal tackle to fishing rod |
-
1987
- 1987-02-25 JP JP4028887A patent/JPH0655357B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5188280A (en) * | 1989-04-28 | 1993-02-23 | Hitachi Ltd. | Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals |
Also Published As
Publication number | Publication date |
---|---|
JPH0655357B2 (en) | 1994-07-27 |
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Legal Events
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